DE3530773C2 - - Google Patents

Info

Publication number
DE3530773C2
DE3530773C2 DE3530773A DE3530773A DE3530773C2 DE 3530773 C2 DE3530773 C2 DE 3530773C2 DE 3530773 A DE3530773 A DE 3530773A DE 3530773 A DE3530773 A DE 3530773A DE 3530773 C2 DE3530773 C2 DE 3530773C2
Authority
DE
Germany
Prior art keywords
groove
layer
capacitor
polycrystalline silicon
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3530773A
Other languages
German (de)
English (en)
Other versions
DE3530773A1 (de
Inventor
Masaaki Tokio/Tokyo Jp Kinugawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE3530773A1 publication Critical patent/DE3530773A1/de
Application granted granted Critical
Publication of DE3530773C2 publication Critical patent/DE3530773C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H10D1/665—Trench conductor-insulator-semiconductor capacitors, e.g. trench MOS capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H10W10/0148—
    • H10W10/17—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/973—Substrate orientation

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE19853530773 1984-08-28 1985-08-28 Halbleitervorrichtung und verfahren zu ihrer herstellung Granted DE3530773A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59178646A JPS6156446A (ja) 1984-08-28 1984-08-28 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
DE3530773A1 DE3530773A1 (de) 1986-03-06
DE3530773C2 true DE3530773C2 (index.php) 1993-09-16

Family

ID=16052099

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19853530773 Granted DE3530773A1 (de) 1984-08-28 1985-08-28 Halbleitervorrichtung und verfahren zu ihrer herstellung

Country Status (4)

Country Link
US (1) US4971926A (index.php)
JP (1) JPS6156446A (index.php)
KR (1) KR900008386B1 (index.php)
DE (1) DE3530773A1 (index.php)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10255866A1 (de) * 2002-11-29 2004-06-17 Infineon Technologies Ag Verfahren und Strukturen zur Erhöhung der Strukturdichte und der Speicherkapazität in einem Halbleiterwafer
DE102004040047B3 (de) * 2004-08-18 2006-02-16 Infineon Technologies Ag Herstellungsverfahren für einen Kondensator
DE102012100006B4 (de) * 2011-01-14 2020-10-15 Infineon Technologies Ag Halbleiterbauelement und Herstellungsverfahren dafür

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61135151A (ja) * 1984-12-05 1986-06-23 Mitsubishi Electric Corp 半導体記憶装置
JPS62293758A (ja) * 1986-06-13 1987-12-21 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JPH0362568A (ja) * 1989-07-31 1991-03-18 Hitachi Ltd 半導体装置の製造方法
JPH05109984A (ja) * 1991-05-27 1993-04-30 Mitsubishi Electric Corp 半導体装置およびその製造方法
US5539238A (en) * 1992-09-02 1996-07-23 Texas Instruments Incorporated Area efficient high voltage Mosfets with vertical resurf drift regions
US5451809A (en) * 1994-09-07 1995-09-19 Kabushiki Kaisha Toshiba Smooth surface doped silicon film formation
US5714775A (en) * 1995-04-20 1998-02-03 Kabushiki Kaisha Toshiba Power semiconductor device
US5729045A (en) * 1996-04-02 1998-03-17 Advanced Micro Devices, Inc. Field effect transistor with higher mobility
DE19807776A1 (de) * 1998-02-24 1999-09-02 Siemens Ag Halbleitervorrichtung und entsprechendes Herstellungsverfahren
JP2002520815A (ja) * 1998-07-02 2002-07-09 インフィネオン テクノロジース アクチエンゲゼルシャフト 欠陥の減少したｐ−ｎ接合部を有する集積回路装置
JP2000174148A (ja) 1998-12-09 2000-06-23 Mitsubishi Electric Corp 不揮発性半導体記憶装置およびその製造方法
US6426254B2 (en) 1999-06-09 2002-07-30 Infineon Technologies Ag Method for expanding trenches by an anisotropic wet etch
US6320215B1 (en) 1999-07-22 2001-11-20 International Business Machines Corporation Crystal-axis-aligned vertical side wall device
US6362040B1 (en) * 2000-02-09 2002-03-26 Infineon Technologies Ag Reduction of orientation dependent oxidation for vertical sidewalls of semiconductor substrates
US20050090047A1 (en) * 2000-12-20 2005-04-28 Actel Corporation, A California Corporation. Method of making a MOS transistor having improved total radiation-induced leakage current
US20050090073A1 (en) * 2000-12-20 2005-04-28 Actel Corporation, A California Corporation MOS transistor having improved total radiation-induced leakage current
TW499729B (en) * 2001-03-16 2002-08-21 Nanya Technology Corp Method of improving uniformity of oxide layer around trench sidewall and manufacture method of deep trench capacitor
CN1610117A (zh) * 2003-10-17 2005-04-27 松下电器产业株式会社 半导体装置及其制造方法
JP2006222379A (ja) * 2005-02-14 2006-08-24 Fuji Film Microdevices Co Ltd 半導体装置およびその製造方法
US8318575B2 (en) 2011-02-07 2012-11-27 Infineon Technologies Ag Compressive polycrystalline silicon film and method of manufacture thereof
JP2014165372A (ja) * 2013-02-26 2014-09-08 Toshiba Corp 不揮発性半導体記憶装置
CN103426828A (zh) * 2013-07-12 2013-12-04 上海新储集成电路有限公司 一种基于绝缘体上硅材料的双极型高压cmos单多晶硅填充深沟道器件隔离工艺

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3785886A (en) * 1971-02-22 1974-01-15 Ibm Semiconductor device fabrication utilizing <100> oriented substrate material
US3965453A (en) * 1974-12-27 1976-06-22 Bell Telephone Laboratories, Incorporated Piezoresistor effects in semiconductor resistors
US3998674A (en) * 1975-11-24 1976-12-21 International Business Machines Corporation Method for forming recessed regions of thermally oxidized silicon and structures thereof utilizing anisotropic etching
US4278987A (en) * 1977-10-17 1981-07-14 Hitachi, Ltd. Junction isolated IC with thick EPI portion having sides at least 20 degrees from (110) orientations
US4131496A (en) * 1977-12-15 1978-12-26 Rca Corp. Method of making silicon on sapphire field effect transistors with specifically aligned gates
JPS5559753A (en) * 1978-10-27 1980-05-06 Hitachi Ltd Semiconductor device
DE2949360A1 (de) * 1978-12-08 1980-06-26 Hitachi Ltd Verfahren zur herstellung einer oxidierten isolation fuer integrierte schaltungen
JPS5681968A (en) * 1979-12-07 1981-07-04 Toshiba Corp Manufacture of semiconductor device
JPS58137245A (ja) * 1982-02-10 1983-08-15 Hitachi Ltd 大規模半導体メモリ
US4577208A (en) * 1982-09-23 1986-03-18 Eaton Corporation Bidirectional power FET with integral avalanche protection
JPS5961045A (ja) * 1982-09-29 1984-04-07 Fujitsu Ltd 半導体装置の製造方法
JPS6039862A (ja) * 1983-08-12 1985-03-01 Nippon Telegr & Teleph Corp <Ntt> 半導体記憶装置およびその製造方法
JPS6049633A (ja) * 1983-08-26 1985-03-18 Hitachi Cable Ltd 半導体装置
EP0243609A1 (en) * 1986-04-30 1987-11-04 International Business Machines Corporation Complementary semiconductor device structure and its production
JPS639964A (ja) * 1986-06-30 1988-01-16 Nec Corp 半導体記憶素子製造法
JPS6380561A (ja) * 1986-09-24 1988-04-11 Nec Corp 相補型半導体装置の製造方法
JPS6380562A (ja) * 1986-09-24 1988-04-11 Nec Corp 相補型半導体装置
JPS63148675A (ja) * 1986-12-12 1988-06-21 Toshiba Corp 半導体装置
JPS63197365A (ja) * 1987-02-12 1988-08-16 Matsushita Electric Ind Co Ltd 半導体装置の製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10255866A1 (de) * 2002-11-29 2004-06-17 Infineon Technologies Ag Verfahren und Strukturen zur Erhöhung der Strukturdichte und der Speicherkapazität in einem Halbleiterwafer
DE10255866B4 (de) * 2002-11-29 2006-11-23 Infineon Technologies Ag Verfahren und Strukturen zur Erhöhung der Strukturdichte und der Speicherkapazität in einem Halbleiterwafer
DE102004040047B3 (de) * 2004-08-18 2006-02-16 Infineon Technologies Ag Herstellungsverfahren für einen Kondensator
DE102012100006B4 (de) * 2011-01-14 2020-10-15 Infineon Technologies Ag Halbleiterbauelement und Herstellungsverfahren dafür

Also Published As

Publication number Publication date
JPS6156446A (ja) 1986-03-22
KR900008386B1 (ko) 1990-11-17
US4971926A (en) 1990-11-20
KR860002135A (ko) 1986-03-26
DE3530773A1 (de) 1986-03-06
JPH0554699B2 (index.php) 1993-08-13

Similar Documents

Publication Publication Date Title
DE3530773C2 (index.php)
DE69730377T2 (de) Permanente Halbleiterspeicherzelle und deren Herstellungsverfahren
DE4433086C2 (de) Halbleitervorrichtung und Verfahren zu deren Herstellung
DE4304849C2 (de) Halbleitervorrichtung und Verfahren zur Herstellung einer Halbleitervorrichtung
DE3841588C2 (index.php)
DE69021419T2 (de) Halbleiterspeicheranordnung mit einem ferroelektrischen Material.
DE69113579T2 (de) Verfahren zur Herstellung einer DRAM-Zelle mit Stapelkondensator.
DE3922456C2 (index.php)
DE3910033C2 (de) Halbleiterspeicher und Verfahren zu dessen Herstellung
DE19607351C2 (de) Verfahren zur Herstellung von Kondensatoren einer Halbleitervorrichtung
DE4208537C2 (de) MOS-FET-Struktur und Verfahren zu deren Herstellung
DE4114344A1 (de) Herstellungsverfahren und aufbau einer nicht-fluechtigen halbleiterspeichereinrichtung mit einer speicherzellenanordnung und einem peripheren schaltkreis
DE3448122C2 (index.php)
DE19649670C2 (de) Verfahren zur Herstellung eines Kondensators einer Halbleitervorrichtung und auf diese Weise hergestellter Kondensator
DE69622339T2 (de) Verfahren zum herstellen einer einrichtung, bei der ein substrat mit halbleiterelement und leiterbahnen auf ein trägersubstrat mit metallisierung aufgeklebt wird
DE3540422A1 (de) Verfahren zum herstellen integrierter strukturen mit nicht-fluechtigen speicherzellen, die selbst-ausgerichtete siliciumschichten und dazugehoerige transistoren aufweisen
EP0992068B1 (de) Sram-zellenanordnung und verfahren zu deren herstellung
EP0862207A1 (de) Verfahren zur Herstellung eines DRAM-Grabenkondensators
DE3140268A1 (de) Halbleiteranordnung mit mindestens einem feldeffekttransistor und verfahren zu ihrer herstellung
DE19808333A1 (de) Bipolartransistor auf einem Substrat mit Halbleiter auf Isolator
DE3927176C2 (index.php)
DE4445568C2 (de) Verfahren zur Herstellung eines Dünnfilmtransistors
DE1947334A1 (de) Halbleiterbauelement und Verfahren zu dessen Herstellung
DE68925092T2 (de) MOS-Feldeffekttransistor
DE4333989B4 (de) Verfahren zur Herstellung eines Kondensators in einem Halbleiterspeicherbauelement

Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)