JPH0456469B2 - - Google Patents
Info
- Publication number
- JPH0456469B2 JPH0456469B2 JP57012309A JP1230982A JPH0456469B2 JP H0456469 B2 JPH0456469 B2 JP H0456469B2 JP 57012309 A JP57012309 A JP 57012309A JP 1230982 A JP1230982 A JP 1230982A JP H0456469 B2 JPH0456469 B2 JP H0456469B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- input protection
- region
- protection resistor
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 51
- 230000005669 field effect Effects 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 13
- 230000005496 eutectics Effects 0.000 claims description 9
- 239000012535 impurity Substances 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 239000003990 capacitor Substances 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 32
- 239000011229 interlayer Substances 0.000 description 8
- 238000000605 extraction Methods 0.000 description 7
- 229910018125 Al-Si Inorganic materials 0.000 description 4
- 229910018520 Al—Si Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78612—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
- Protection Of Static Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1230982A JPS58151062A (ja) | 1982-01-28 | 1982-01-28 | 半導体装置 |
| FR8222037A FR2520556B1 (fr) | 1982-01-28 | 1982-12-29 | Dispositif semi-conducteur forme sur un substrat isolant |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1230982A JPS58151062A (ja) | 1982-01-28 | 1982-01-28 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58151062A JPS58151062A (ja) | 1983-09-08 |
| JPH0456469B2 true JPH0456469B2 (ko) | 1992-09-08 |
Family
ID=11801709
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1230982A Granted JPS58151062A (ja) | 1982-01-28 | 1982-01-28 | 半導体装置 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS58151062A (ko) |
| FR (1) | FR2520556B1 (ko) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62104173A (ja) * | 1985-10-31 | 1987-05-14 | Fujitsu Ltd | 半導体装置 |
| GB2211989A (en) * | 1987-11-05 | 1989-07-12 | Marconi Electronic Devices | Field effect transistors |
| FR2648623B1 (fr) * | 1989-06-19 | 1994-07-08 | France Etat | Structure de transistor mos sur isolant avec prise de caisson reliee a la source et procede de fabrication |
| FR2789519B1 (fr) * | 1999-02-05 | 2003-03-28 | Commissariat Energie Atomique | Transistor mos a tension de seuil dynamique equipe d'un limiteur de courant, et procede de realisation d'un tel transistor |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5279786A (en) * | 1975-12-26 | 1977-07-05 | Fujitsu Ltd | Semiconductor memory device |
| JPS52144278A (en) * | 1976-05-27 | 1977-12-01 | Toshiba Corp | Circuit for protecting input with respect to mos integrated circuit |
| JPS5366178A (en) * | 1976-11-26 | 1978-06-13 | Toshiba Corp | Input protecting circuit |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2284983A1 (fr) * | 1974-09-13 | 1976-04-09 | Commissariat Energie Atomique | Procede d'amelioration des caracteristiques des transistors m.o.s. sur support isolant et transistors obtenus par ledit procede |
| US4302765A (en) * | 1978-09-05 | 1981-11-24 | Rockwell International Corporation | Geometry for fabricating enhancement and depletion-type, pull-up field effect transistor devices |
-
1982
- 1982-01-28 JP JP1230982A patent/JPS58151062A/ja active Granted
- 1982-12-29 FR FR8222037A patent/FR2520556B1/fr not_active Expired
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5279786A (en) * | 1975-12-26 | 1977-07-05 | Fujitsu Ltd | Semiconductor memory device |
| JPS52144278A (en) * | 1976-05-27 | 1977-12-01 | Toshiba Corp | Circuit for protecting input with respect to mos integrated circuit |
| JPS5366178A (en) * | 1976-11-26 | 1978-06-13 | Toshiba Corp | Input protecting circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2520556B1 (fr) | 1986-04-25 |
| JPS58151062A (ja) | 1983-09-08 |
| FR2520556A1 (fr) | 1983-07-29 |
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