JPS626661B2 - - Google Patents
Info
- Publication number
- JPS626661B2 JPS626661B2 JP53000553A JP55378A JPS626661B2 JP S626661 B2 JPS626661 B2 JP S626661B2 JP 53000553 A JP53000553 A JP 53000553A JP 55378 A JP55378 A JP 55378A JP S626661 B2 JPS626661 B2 JP S626661B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode pad
- misfet
- protective
- electrode
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000001681 protective effect Effects 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 16
- 230000002159 abnormal effect Effects 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 12
- 230000005684 electric field Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Protection Of Static Devices (AREA)
- Amplifiers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55378A JPS5494284A (en) | 1978-01-09 | 1978-01-09 | Mis semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55378A JPS5494284A (en) | 1978-01-09 | 1978-01-09 | Mis semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5494284A JPS5494284A (en) | 1979-07-25 |
| JPS626661B2 true JPS626661B2 (ko) | 1987-02-12 |
Family
ID=11476906
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55378A Granted JPS5494284A (en) | 1978-01-09 | 1978-01-09 | Mis semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5494284A (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0495260U (ko) * | 1990-12-27 | 1992-08-18 |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61115344A (ja) * | 1984-11-09 | 1986-06-02 | Mitsubishi Electric Corp | 入力保護回路 |
| JPS61292352A (ja) * | 1985-06-20 | 1986-12-23 | Sanyo Electric Co Ltd | 入力保護回路 |
| JPS61292351A (ja) * | 1985-06-20 | 1986-12-23 | Sanyo Electric Co Ltd | 入力保護回路 |
| JPS6276676A (ja) * | 1985-09-30 | 1987-04-08 | Toshiba Corp | Ｍｏｓ型半導体集積回路装置 |
| JP4676116B2 (ja) * | 2000-11-01 | 2011-04-27 | セイコーインスツル株式会社 | 半導体装置 |
-
1978
- 1978-01-09 JP JP55378A patent/JPS5494284A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0495260U (ko) * | 1990-12-27 | 1992-08-18 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5494284A (en) | 1979-07-25 |
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