FR2520556B1 - Dispositif semi-conducteur forme sur un substrat isolant - Google Patents

Dispositif semi-conducteur forme sur un substrat isolant

Info

Publication number
FR2520556B1
FR2520556B1 FR8222037A FR8222037A FR2520556B1 FR 2520556 B1 FR2520556 B1 FR 2520556B1 FR 8222037 A FR8222037 A FR 8222037A FR 8222037 A FR8222037 A FR 8222037A FR 2520556 B1 FR2520556 B1 FR 2520556B1
Authority
FR
France
Prior art keywords
semiconductor device
insulating substrate
device formed
insulating
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8222037A
Other languages
English (en)
Other versions
FR2520556A1 (fr
Inventor
Mitsuo Isobe
Yukimasa Uchida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of FR2520556A1 publication Critical patent/FR2520556A1/fr
Application granted granted Critical
Publication of FR2520556B1 publication Critical patent/FR2520556B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78612—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Protection Of Static Devices (AREA)
FR8222037A 1982-01-28 1982-12-29 Dispositif semi-conducteur forme sur un substrat isolant Expired FR2520556B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1230982A JPS58151062A (ja) 1982-01-28 1982-01-28 半導体装置

Publications (2)

Publication Number Publication Date
FR2520556A1 FR2520556A1 (fr) 1983-07-29
FR2520556B1 true FR2520556B1 (fr) 1986-04-25

Family

ID=11801709

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8222037A Expired FR2520556B1 (fr) 1982-01-28 1982-12-29 Dispositif semi-conducteur forme sur un substrat isolant

Country Status (2)

Country Link
JP (1) JPS58151062A (fr)
FR (1) FR2520556B1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62104173A (ja) * 1985-10-31 1987-05-14 Fujitsu Ltd 半導体装置
GB2211989A (en) * 1987-11-05 1989-07-12 Marconi Electronic Devices Field effect transistors
FR2648623B1 (fr) * 1989-06-19 1994-07-08 France Etat Structure de transistor mos sur isolant avec prise de caisson reliee a la source et procede de fabrication
FR2789519B1 (fr) * 1999-02-05 2003-03-28 Commissariat Energie Atomique Transistor mos a tension de seuil dynamique equipe d'un limiteur de courant, et procede de realisation d'un tel transistor

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2284983A1 (fr) * 1974-09-13 1976-04-09 Commissariat Energie Atomique Procede d'amelioration des caracteristiques des transistors m.o.s. sur support isolant et transistors obtenus par ledit procede
JPS5279786A (en) * 1975-12-26 1977-07-05 Fujitsu Ltd Semiconductor memory device
JPS52144278A (en) * 1976-05-27 1977-12-01 Toshiba Corp Circuit for protecting input with respect to mos integrated circuit
JPS5366178A (en) * 1976-11-26 1978-06-13 Toshiba Corp Input protecting circuit
US4302765A (en) * 1978-09-05 1981-11-24 Rockwell International Corporation Geometry for fabricating enhancement and depletion-type, pull-up field effect transistor devices

Also Published As

Publication number Publication date
JPH0456469B2 (fr) 1992-09-08
JPS58151062A (ja) 1983-09-08
FR2520556A1 (fr) 1983-07-29

Similar Documents

Publication Publication Date Title
DE3786683D1 (de) Zeitverzoegerungsschaltung fuer halbleitervorrichtung.
DE3879804D1 (de) Integrierte halbleiterschaltungsvorrichtung.
KR900008918A (ko) 배선기판과 그 제조방법, 박막 캐리어, 반도체 장치 및 그 장착구조와 반도체 장치장착 방법
FR2494021B1 (fr) Dispositif a circuits integres a semiconducteurs
JPS5759372A (en) Circuit structure altering device for integrated semiconductor circuit
DE3070877D1 (en) High frequency semiconductor device on an insulating substrate
DE3675565D1 (de) Substratstruktur fuer halbleiteranordnung.
DE3275886D1 (en) Semiconductor device having an interconnection pattern
FR2550012B1 (fr) Dispositif a circuits integres a semi-conducteurs
FR2625043B1 (fr) Dispositif semi-conducteur
KR870005450A (ko) 반도체층을 통한 전기적 단락이 없는 반도체 장치와 그 제조방법
DE3280202D1 (de) Heterouebergang-halbleitereinrichtung mit hoher elektronenbeweglichkeit.
FR2516723B1 (fr) Dispositif a circuits integres a semi-conducteurs
KR850007157A (ko) 반도체 집적 회로장치
IT8322373A0 (it) Dispositivo semiconduttore.
IT8323707A0 (it) Substrato di cablaggio, procedimento per la sua fabbricazione, e dispositivo a semiconduttore utilizzante il substrato stesso.
EP0042175A3 (en) Semiconductor device having a semiconductor layer formed on an insulating substrate and method for making the same
FR2596922B1 (fr) Resistance integree sur un substrat semi-conducteur
FR2513440B1 (fr) Dispositif a circuits integres a semi-conducteurs
FR2525849B1 (fr) Substrat de circuit imprime
KR870004490A (ko) 반도체 웨이퍼 브레이크(wafer break)장치
EP0200230A3 (en) Logic integrated circuit device formed on compound semiconductor substrate
FR2493603B1 (fr) Dispositif semiconducteur
DE3867587D1 (de) Halbleiterschaltungsvorrichtung.
DE3781731D1 (de) Schaltungssubstrat aus aluminiumnitrid.

Legal Events

Date Code Title Description
CD Change of name or company name
ST Notification of lapse