DE3280202D1 - Heterouebergang-halbleitereinrichtung mit hoher elektronenbeweglichkeit. - Google Patents

Heterouebergang-halbleitereinrichtung mit hoher elektronenbeweglichkeit.

Info

Publication number
DE3280202D1
DE3280202D1 DE8282301126T DE3280202T DE3280202D1 DE 3280202 D1 DE3280202 D1 DE 3280202D1 DE 8282301126 T DE8282301126 T DE 8282301126T DE 3280202 T DE3280202 T DE 3280202T DE 3280202 D1 DE3280202 D1 DE 3280202D1
Authority
DE
Germany
Prior art keywords
heterouition
semiconductor device
high electronic
electronic mobility
mobility
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8282301126T
Other languages
English (en)
Inventor
Shigeru Okamura
Tomonori Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3280202D1 publication Critical patent/DE3280202D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G11C13/047—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using electro-optical elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/1127—Devices with PN heterojunction gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/1127—Devices with PN heterojunction gate
    • H01L31/1129—Devices with PN heterojunction gate the device being a field-effect phototransistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
    • H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
DE8282301126T 1981-03-06 1982-03-05 Heterouebergang-halbleitereinrichtung mit hoher elektronenbeweglichkeit. Expired - Fee Related DE3280202D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56032088A JPS57147284A (en) 1981-03-06 1981-03-06 Semiconductor device

Publications (1)

Publication Number Publication Date
DE3280202D1 true DE3280202D1 (de) 1990-08-09

Family

ID=12349118

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282301126T Expired - Fee Related DE3280202D1 (de) 1981-03-06 1982-03-05 Heterouebergang-halbleitereinrichtung mit hoher elektronenbeweglichkeit.

Country Status (4)

Country Link
US (1) US4734750A (de)
EP (1) EP0060657B1 (de)
JP (1) JPS57147284A (de)
DE (1) DE3280202D1 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0067721B1 (de) * 1981-06-17 1989-04-26 Hitachi, Ltd. Halbleiteranordnung mit Heteroübergängen
JPS5992580A (ja) * 1982-10-21 1984-05-28 ウエスターン　エレクトリック　カムパニー，インコーポレーテッド 光検出器
JPS6041262A (ja) * 1983-08-16 1985-03-04 Oki Electric Ind Co Ltd 半導体装置
JPS60140752A (ja) * 1983-12-28 1985-07-25 Olympus Optical Co Ltd 半導体光電変換装置
GB2172742B (en) * 1985-03-21 1988-08-24 Stc Plc Photoconductor
DE3687049T2 (de) * 1985-04-05 1993-03-25 Nippon Electric Co Bipolare eigenschaften aufweisender transistor mit heterouebergang.
GB2176935B (en) * 1985-06-21 1988-11-23 Stc Plc Photoconductor
JPS63114176A (ja) * 1986-10-31 1988-05-19 Fujitsu Ltd 高速電界効果半導体装置
US4970566A (en) * 1988-08-08 1990-11-13 Trw Inc. High speed photo detector
US5021841A (en) * 1988-10-14 1991-06-04 University Of Illinois Semiconductor device with controlled negative differential resistance characteristic
JP2503616B2 (ja) * 1988-12-27 1996-06-05 日本電気株式会社 半導体装置
US5227644A (en) * 1989-07-06 1993-07-13 Nec Corporation Heterojunction field effect transistor with improve carrier density and mobility
US5242846A (en) * 1989-10-30 1993-09-07 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a junction field effect transistor
EP0480354B1 (de) * 1990-10-08 1997-02-26 Canon Kabushiki Kaisha Elektronenwelleninterferenz-Bauelement und diesbezügliches Verfahren zur Modulation eines Interferenzstromes
GB2306769B (en) * 1995-10-16 1997-09-17 Toshiba Cambridge Res Center Radiation detector
US7781801B2 (en) * 2006-09-25 2010-08-24 Alcatel-Lucent Usa Inc. Field-effect transistors whose gate electrodes are over semiconductor heterostructures and parts of source and drain electrodes
WO2009039298A2 (en) * 2007-09-18 2009-03-26 University Of Florida Research Foundation, Inc. Sensors using aigan/gan high electron mobility transistors
US8836351B2 (en) * 2008-06-10 2014-09-16 University Of Florida Research Foundation, Inc. Chloride detection
US20110117669A1 (en) 2008-11-06 2011-05-19 Fan Ren Materials and methods for detecting toxins, pathogens and other biological materials
US8592745B2 (en) * 2009-08-19 2013-11-26 Luxtera Inc. Method and system for optoelectronic receivers utilizing waveguide heterojunction phototransistors integrated in a CMOS SOI wafer
US8891266B2 (en) * 2012-03-13 2014-11-18 International Business Machines Corporation Monolithic high voltage multiplier having high voltage semiconductor diodes and high-k capacitors
CN103680596B (zh) * 2012-08-31 2017-05-17 中国科学院微电子研究所 半导体存储器阵列及其访问方法
CN110718589B (zh) * 2018-07-12 2024-04-16 纳姆实验有限责任公司 具有半导体器件的电子电路的异质结构

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3448348A (en) * 1965-03-05 1969-06-03 Ford Motor Co Transducer utilizing electrically polarizable material
AU7731575A (en) * 1974-01-18 1976-07-15 Nat Patent Dev Corp Heterojunction devices
US4323911A (en) * 1978-12-14 1982-04-06 Bell Telephone Laboratories, Incorporated Demultiplexing photodetectors
US4257055A (en) * 1979-07-26 1981-03-17 University Of Illinois Foundation Negative resistance heterojunction devices
DE2930584C2 (de) * 1979-07-27 1982-04-29 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V., 3400 Göttingen Halbleiterbauelement, das den Effekt der gespeicherten Photoleitung ausnutzt
JPS5678180A (en) * 1979-11-30 1981-06-26 Hitachi Ltd Light receiving device
CA1145482A (en) * 1979-12-28 1983-04-26 Takashi Mimura High electron mobility single heterojunction semiconductor device
US4295002A (en) * 1980-06-23 1981-10-13 International Business Machines Corporation Heterojunction V-groove multijunction solar cell

Also Published As

Publication number Publication date
EP0060657B1 (de) 1990-07-04
EP0060657A2 (de) 1982-09-22
EP0060657A3 (en) 1985-07-24
JPS57147284A (en) 1982-09-11
US4734750A (en) 1988-03-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee