EP0060657A3 - High electron mobility heterojunction semiconductor devices - Google Patents

High electron mobility heterojunction semiconductor devices

Info

Publication number
EP0060657A3
EP0060657A3 EP82301126A EP82301126A EP0060657A3 EP 0060657 A3 EP0060657 A3 EP 0060657A3 EP 82301126 A EP82301126 A EP 82301126A EP 82301126 A EP82301126 A EP 82301126A EP 0060657 A3 EP0060657 A3 EP 0060657A3
Authority
EP
European Patent Office
Prior art keywords
semiconductor devices
electron mobility
high electron
heterojunction semiconductor
mobility heterojunction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP82301126A
Other versions
EP0060657B1 (en
EP0060657A2 (en
Inventor
Shigeru Okamura
Tomonori Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of EP0060657A2 publication Critical patent/EP0060657A2/en
Publication of EP0060657A3 publication Critical patent/EP0060657A3/en
Application granted granted Critical
Publication of EP0060657B1 publication Critical patent/EP0060657B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G11C13/047—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using electro-optical elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/1127—Devices with PN heterojunction gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/1127—Devices with PN heterojunction gate
    • H01L31/1129—Devices with PN heterojunction gate the device being a field-effect phototransistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
    • H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
EP82301126A 1981-03-06 1982-03-05 High electron mobility heterojunction semiconductor devices Expired - Lifetime EP0060657B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP32088/81 1981-03-06
JP56032088A JPS57147284A (en) 1981-03-06 1981-03-06 Semiconductor device

Publications (3)

Publication Number Publication Date
EP0060657A2 EP0060657A2 (en) 1982-09-22
EP0060657A3 true EP0060657A3 (en) 1985-07-24
EP0060657B1 EP0060657B1 (en) 1990-07-04

Family

ID=12349118

Family Applications (1)

Application Number Title Priority Date Filing Date
EP82301126A Expired - Lifetime EP0060657B1 (en) 1981-03-06 1982-03-05 High electron mobility heterojunction semiconductor devices

Country Status (4)

Country Link
US (1) US4734750A (en)
EP (1) EP0060657B1 (en)
JP (1) JPS57147284A (en)
DE (1) DE3280202D1 (en)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0067721B1 (en) * 1981-06-17 1989-04-26 Hitachi, Ltd. Heterojunction semiconductor device
JPS5992580A (en) * 1982-10-21 1984-05-28 ウエスターン　エレクトリック　カムパニー，インコーポレーテッド Photodetector
JPS6041262A (en) * 1983-08-16 1985-03-04 Oki Electric Ind Co Ltd Semiconductor device
JPS60140752A (en) * 1983-12-28 1985-07-25 Olympus Optical Co Ltd Semiconductor photoelectric conversion device
GB2172742B (en) * 1985-03-21 1988-08-24 Stc Plc Photoconductor
EP0200933B1 (en) * 1985-04-05 1992-11-04 Nec Corporation Heterojunction transistor having bipolar characteristics
GB2176935B (en) * 1985-06-21 1988-11-23 Stc Plc Photoconductor
JPS63114176A (en) * 1986-10-31 1988-05-19 Fujitsu Ltd High-speed field effect semiconductor device
US4970566A (en) * 1988-08-08 1990-11-13 Trw Inc. High speed photo detector
US5021841A (en) * 1988-10-14 1991-06-04 University Of Illinois Semiconductor device with controlled negative differential resistance characteristic
JP2503616B2 (en) * 1988-12-27 1996-06-05 日本電気株式会社 Semiconductor device
US5227644A (en) * 1989-07-06 1993-07-13 Nec Corporation Heterojunction field effect transistor with improve carrier density and mobility
US5242846A (en) * 1989-10-30 1993-09-07 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a junction field effect transistor
EP0480354B1 (en) * 1990-10-08 1997-02-26 Canon Kabushiki Kaisha Electron wave interference device and related method for modulating an interference current
GB2306769B (en) * 1995-10-16 1997-09-17 Toshiba Cambridge Res Center Radiation detector
US7781801B2 (en) * 2006-09-25 2010-08-24 Alcatel-Lucent Usa Inc. Field-effect transistors whose gate electrodes are over semiconductor heterostructures and parts of source and drain electrodes
WO2009039298A2 (en) * 2007-09-18 2009-03-26 University Of Florida Research Foundation, Inc. Sensors using aigan/gan high electron mobility transistors
US8836351B2 (en) * 2008-06-10 2014-09-16 University Of Florida Research Foundation, Inc. Chloride detection
US20110117669A1 (en) * 2008-11-06 2011-05-19 Fan Ren Materials and methods for detecting toxins, pathogens and other biological materials
US8592745B2 (en) * 2009-08-19 2013-11-26 Luxtera Inc. Method and system for optoelectronic receivers utilizing waveguide heterojunction phototransistors integrated in a CMOS SOI wafer
US8891266B2 (en) * 2012-03-13 2014-11-18 International Business Machines Corporation Monolithic high voltage multiplier having high voltage semiconductor diodes and high-k capacitors
CN103680596B (en) * 2012-08-31 2017-05-17 中国科学院微电子研究所 Semiconductor memory array and access method thereof
US11699749B2 (en) * 2018-07-12 2023-07-11 Namlab Ggmbh Heterostructure of an electronic circuit having a semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3448348A (en) * 1965-03-05 1969-06-03 Ford Motor Co Transducer utilizing electrically polarizable material
US4295002A (en) * 1980-06-23 1981-10-13 International Business Machines Corporation Heterojunction V-groove multijunction solar cell

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU7731575A (en) * 1974-01-18 1976-07-15 Nat Patent Dev Corp Heterojunction devices
US4323911A (en) * 1978-12-14 1982-04-06 Bell Telephone Laboratories, Incorporated Demultiplexing photodetectors
US4257055A (en) * 1979-07-26 1981-03-17 University Of Illinois Foundation Negative resistance heterojunction devices
DE2930584C2 (en) * 1979-07-27 1982-04-29 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V., 3400 Göttingen Semiconductor component that uses the effect of stored photoconductivity
JPS5678180A (en) * 1979-11-30 1981-06-26 Hitachi Ltd Light receiving device
CA1145482A (en) * 1979-12-28 1983-04-26 Takashi Mimura High electron mobility single heterojunction semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3448348A (en) * 1965-03-05 1969-06-03 Ford Motor Co Transducer utilizing electrically polarizable material
US4295002A (en) * 1980-06-23 1981-10-13 International Business Machines Corporation Heterojunction V-groove multijunction solar cell

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
APPLIED PHYSICS LETTERS, vol. 33, no. 7, October 1, 1978, New York, US R. DINGLE et al.: "Electron mobilities in modultion-doped semiconductor heterojunction superlattics" pages 665-667 *
APPLIED PHYSICS LETTERS, vol. 37, no. 11, December 1980, New York, US L.C. WITKOWSKI et al.: "High mobilities in ALxGa1-xAs-GaAs heterojunctions", pages 1033-1035 *
APPLIED PHYSICS LETTERS, vol. 37, no. 9, November 1, 1980, New York, US S. HIYAMIZU et al.: "High mobility of two-dimensional electrons at the GaAs/n-ALGaAs heterojunction interface", pages 805-807 *
ELECTRONICS LETTERS, vol. 17, no. 10, May 14, 1981, London, GB P. DELESCLUSE et al.: "Transport properties in GaAs-A1xGa1-xAs heterostructures and MESFET application", pages 342-344 *
IBM TECHNICAL DISCLOSURE BULLETIN, vol. 15, no. 4, September 1972, pges 1327-1328 New York, US S.C.C. TSENG et al.: "Electro-optical memory with write, read and erase characteristics" *
JAPANESE JOURNAL OF APPLIED PHYSICS vol. 19, no. 5, May 1980 (letters) Tokyo, JP T. MIMURA et al.: "A new fieldeffect transistor with selectivel doped GaAs/n-A1xGA1-xAs heterojunctions", pages L225-L227 *

Also Published As

Publication number Publication date
EP0060657B1 (en) 1990-07-04
JPS57147284A (en) 1982-09-11
US4734750A (en) 1988-03-29
DE3280202D1 (en) 1990-08-09
EP0060657A2 (en) 1982-09-22

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