FR2284983A1 - Procede d'amelioration des caracteristiques des transistors m.o.s. sur support isolant et transistors obtenus par ledit procede - Google Patents
Procede d'amelioration des caracteristiques des transistors m.o.s. sur support isolant et transistors obtenus par ledit procedeInfo
- Publication number
- FR2284983A1 FR2284983A1 FR7431138A FR7431138A FR2284983A1 FR 2284983 A1 FR2284983 A1 FR 2284983A1 FR 7431138 A FR7431138 A FR 7431138A FR 7431138 A FR7431138 A FR 7431138A FR 2284983 A1 FR2284983 A1 FR 2284983A1
- Authority
- FR
- France
- Prior art keywords
- drain
- transistor
- field strength
- substrate
- concn
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005684 electric field Effects 0.000 title abstract 2
- 239000012535 impurity Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 title abstract 2
- 239000002800 charge carrier Substances 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7431138A FR2284983A1 (fr) | 1974-09-13 | 1974-09-13 | Procede d'amelioration des caracteristiques des transistors m.o.s. sur support isolant et transistors obtenus par ledit procede |
CH1113975A CH590556A5 (fr) | 1974-09-13 | 1975-08-28 | |
NL7510485A NL7510485A (nl) | 1974-09-13 | 1975-09-05 | Werkwijze voor het vervaardigen van een tran- sistor, en zodoende verkregen transistor. |
JP11084375A JPS5160174A (en) | 1974-09-13 | 1975-09-12 | Zetsuentaijono mos gatatoranjisutano tokuseiokairyosuruhoho oyobi konohohonyotsuteerarerutoranjisuta |
DE19752541118 DE2541118A1 (de) | 1974-09-13 | 1975-09-15 | Verfahren zur herstellung von mos-transistoren mit verbesserten eigenschaften |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7431138A FR2284983A1 (fr) | 1974-09-13 | 1974-09-13 | Procede d'amelioration des caracteristiques des transistors m.o.s. sur support isolant et transistors obtenus par ledit procede |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2284983A1 true FR2284983A1 (fr) | 1976-04-09 |
FR2284983B1 FR2284983B1 (fr) | 1978-06-09 |
Family
ID=9143080
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7431138A Granted FR2284983A1 (fr) | 1974-09-13 | 1974-09-13 | Procede d'amelioration des caracteristiques des transistors m.o.s. sur support isolant et transistors obtenus par ledit procede |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS5160174A (fr) |
CH (1) | CH590556A5 (fr) |
DE (1) | DE2541118A1 (fr) |
FR (1) | FR2284983A1 (fr) |
NL (1) | NL7510485A (fr) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2433240A1 (fr) * | 1978-08-08 | 1980-03-07 | Siemens Ag | Transistor a effet de champ mos pour des tensions assez elevees |
EP0017709A1 (fr) * | 1979-02-21 | 1980-10-29 | Rockwell International Corporation | Dispositif à matrice de mémoire et procédé de fabrication |
FR2520556A1 (fr) * | 1982-01-28 | 1983-07-29 | Tokyo Shibaura Electric Co | Dispositif semi-conducteur forme sur un substrat isolant |
-
1974
- 1974-09-13 FR FR7431138A patent/FR2284983A1/fr active Granted
-
1975
- 1975-08-28 CH CH1113975A patent/CH590556A5/xx not_active IP Right Cessation
- 1975-09-05 NL NL7510485A patent/NL7510485A/xx not_active Application Discontinuation
- 1975-09-12 JP JP11084375A patent/JPS5160174A/ja active Pending
- 1975-09-15 DE DE19752541118 patent/DE2541118A1/de not_active Withdrawn
Non-Patent Citations (1)
Title |
---|
NEANT * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2433240A1 (fr) * | 1978-08-08 | 1980-03-07 | Siemens Ag | Transistor a effet de champ mos pour des tensions assez elevees |
EP0017709A1 (fr) * | 1979-02-21 | 1980-10-29 | Rockwell International Corporation | Dispositif à matrice de mémoire et procédé de fabrication |
FR2520556A1 (fr) * | 1982-01-28 | 1983-07-29 | Tokyo Shibaura Electric Co | Dispositif semi-conducteur forme sur un substrat isolant |
Also Published As
Publication number | Publication date |
---|---|
FR2284983B1 (fr) | 1978-06-09 |
DE2541118A1 (de) | 1976-03-25 |
CH590556A5 (fr) | 1977-08-15 |
NL7510485A (nl) | 1976-03-16 |
JPS5160174A (en) | 1976-05-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |