JPH0427706B2 - - Google Patents

Info

Publication number
JPH0427706B2
JPH0427706B2 JP57112422A JP11242282A JPH0427706B2 JP H0427706 B2 JPH0427706 B2 JP H0427706B2 JP 57112422 A JP57112422 A JP 57112422A JP 11242282 A JP11242282 A JP 11242282A JP H0427706 B2 JPH0427706 B2 JP H0427706B2
Authority
JP
Japan
Prior art keywords
region
depth
gate
amorphous
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57112422A
Other languages
English (en)
Japanese (ja)
Other versions
JPS592346A (ja
Inventor
Junichi Nishizawa
Tadahiro Oomi
Masaki Ooshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP57112422A priority Critical patent/JPS592346A/ja
Publication of JPS592346A publication Critical patent/JPS592346A/ja
Publication of JPH0427706B2 publication Critical patent/JPH0427706B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W10/0125—
    • H10W10/13—

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Drying Of Semiconductors (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
JP57112422A 1982-06-28 1982-06-28 半導体集積回路 Granted JPS592346A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57112422A JPS592346A (ja) 1982-06-28 1982-06-28 半導体集積回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57112422A JPS592346A (ja) 1982-06-28 1982-06-28 半導体集積回路

Publications (2)

Publication Number Publication Date
JPS592346A JPS592346A (ja) 1984-01-07
JPH0427706B2 true JPH0427706B2 (enExample) 1992-05-12

Family

ID=14586248

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57112422A Granted JPS592346A (ja) 1982-06-28 1982-06-28 半導体集積回路

Country Status (1)

Country Link
JP (1) JPS592346A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011071512A (ja) * 2009-09-24 2011-04-07 Samsung Electronics Co Ltd 電力電子素子及びその製造方法並びに電力電子素子を含む集積回路モジュール
WO2013108911A1 (ja) * 2012-01-19 2013-07-25 富士電機株式会社 半導体装置およびその製造方法
WO2013141221A1 (ja) * 2012-03-19 2013-09-26 富士電機株式会社 半導体装置の製造方法
WO2013141141A1 (ja) * 2012-03-19 2013-09-26 富士電機株式会社 半導体装置の製造方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4583282A (en) * 1984-09-14 1986-04-22 Motorola, Inc. Process for self-aligned buried layer, field guard, and isolation
CN103972147A (zh) * 2014-05-08 2014-08-06 上海华力微电子有限公司 一种窄沟槽制作方法
EP3337546B1 (en) 2015-08-21 2020-09-23 3M Innovative Properties Company Nasogastric tube securement systems
WO2017034911A1 (en) 2015-08-21 2017-03-02 3M Innovative Properties Company Nasogastric tube securement systems and methods of using same
EP3337545B1 (en) 2015-08-21 2021-01-13 3M Innovative Properties Company Nasogastric tube securement systems
USD928312S1 (en) 2019-10-30 2021-08-17 3M Innovative Properties Company Tube securement device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4915114A (enExample) * 1972-06-02 1974-02-09
JPS50785A (enExample) * 1973-05-02 1975-01-07
JPS545955B2 (enExample) * 1973-05-09 1979-03-23
JPS514977A (en) * 1974-07-01 1976-01-16 Iwatsu Electric Co Ltd Zetsuensono keiseihoho
JPS5245188B2 (enExample) * 1974-11-06 1977-11-14
JPS55103759A (en) * 1979-02-02 1980-08-08 Semiconductor Res Found Electrostatic induction transistor integrated circuit
JPS55150269A (en) * 1979-05-11 1980-11-22 Semiconductor Res Found Semiconductor integrated circuit
JPS55154748A (en) * 1979-05-23 1980-12-02 Toshiba Corp Complementary mos semiconductor device

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011071512A (ja) * 2009-09-24 2011-04-07 Samsung Electronics Co Ltd 電力電子素子及びその製造方法並びに電力電子素子を含む集積回路モジュール
JPWO2013108911A1 (ja) * 2012-01-19 2015-05-11 富士電機株式会社 半導体装置およびその製造方法
WO2013108911A1 (ja) * 2012-01-19 2013-07-25 富士電機株式会社 半導体装置およびその製造方法
US10128360B2 (en) 2012-01-19 2018-11-13 Fuji Electric Co., Ltd. Semiconductor device and method for producing the same
US9520475B2 (en) 2012-01-19 2016-12-13 Fuji Electric Co., Ltd. Semiconductor device and method for producing the same
JPWO2013141141A1 (ja) * 2012-03-19 2015-08-03 富士電機株式会社 半導体装置の製造方法
CN104040692A (zh) * 2012-03-19 2014-09-10 富士电机株式会社 半导体装置的制造方法
JPWO2013141221A1 (ja) * 2012-03-19 2015-08-03 富士電機株式会社 半導体装置の製造方法
WO2013141141A1 (ja) * 2012-03-19 2013-09-26 富士電機株式会社 半導体装置の製造方法
US9530672B2 (en) 2012-03-19 2016-12-27 Fuji Electric Co., Ltd. Production method for a semiconductor device
US9947761B2 (en) 2012-03-19 2018-04-17 Fuji Electric Co., Ltd. Production method for semiconductor device
WO2013141221A1 (ja) * 2012-03-19 2013-09-26 富士電機株式会社 半導体装置の製造方法
US10566440B2 (en) 2012-03-19 2020-02-18 Fuji Electric Co., Ltd. Production method for semiconductor device

Also Published As

Publication number Publication date
JPS592346A (ja) 1984-01-07

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