JPH0228253B2 - - Google Patents

Info

Publication number
JPH0228253B2
JPH0228253B2 JP58223566A JP22356683A JPH0228253B2 JP H0228253 B2 JPH0228253 B2 JP H0228253B2 JP 58223566 A JP58223566 A JP 58223566A JP 22356683 A JP22356683 A JP 22356683A JP H0228253 B2 JPH0228253 B2 JP H0228253B2
Authority
JP
Japan
Prior art keywords
wiring
layer
metal
film
hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58223566A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60115221A (ja
Inventor
Takahiko Morya
Saburo Nakada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP22356683A priority Critical patent/JPS60115221A/ja
Publication of JPS60115221A publication Critical patent/JPS60115221A/ja
Publication of JPH0228253B2 publication Critical patent/JPH0228253B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP22356683A 1983-11-28 1983-11-28 半導体装置の製造方法 Granted JPS60115221A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22356683A JPS60115221A (ja) 1983-11-28 1983-11-28 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22356683A JPS60115221A (ja) 1983-11-28 1983-11-28 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS60115221A JPS60115221A (ja) 1985-06-21
JPH0228253B2 true JPH0228253B2 (enrdf_load_html_response) 1990-06-22

Family

ID=16800164

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22356683A Granted JPS60115221A (ja) 1983-11-28 1983-11-28 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS60115221A (enrdf_load_html_response)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6365643A (ja) * 1986-09-05 1988-03-24 Nec Corp 半導体装置の製造方法
JP2512740B2 (ja) * 1987-03-17 1996-07-03 富士通株式会社 半導体装置の製造方法
JP2798250B2 (ja) * 1987-06-01 1998-09-17 ゼネラル・エレクトリック・カンパニイ アルミニウム物質との低抵抗接点形成方法，およびアルミニウムとの低抵抗接点
JPH0638416B2 (ja) * 1987-10-15 1994-05-18 日本電気株式会社 半導体装置
JPH01262644A (ja) * 1988-04-13 1989-10-19 Fujitsu Ltd 配線形成方法
JPH0235753A (ja) * 1988-07-26 1990-02-06 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPH03116932A (ja) * 1989-09-29 1991-05-17 Sharp Corp 多層配線の形成方法
JPH04226054A (ja) * 1990-03-02 1992-08-14 Toshiba Corp 多層配線構造を有する半導体装置及びその製造方法
KR0124644B1 (ko) * 1994-05-10 1997-12-11 문정환 반도체소자의 다층금속배선의 형성방법

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5828856A (ja) * 1981-08-13 1983-02-19 Nec Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS60115221A (ja) 1985-06-21

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