JP7223772B2 - 電子部品の接合方法および接合構造体 - Google Patents
電子部品の接合方法および接合構造体 Download PDFInfo
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- JP7223772B2 JP7223772B2 JP2020562400A JP2020562400A JP7223772B2 JP 7223772 B2 JP7223772 B2 JP 7223772B2 JP 2020562400 A JP2020562400 A JP 2020562400A JP 2020562400 A JP2020562400 A JP 2020562400A JP 7223772 B2 JP7223772 B2 JP 7223772B2
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- 238000000034 method Methods 0.000 title claims description 42
- 229910000679 solder Inorganic materials 0.000 claims description 90
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 claims description 30
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 29
- 239000010931 gold Substances 0.000 claims description 23
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 21
- 229910052737 gold Inorganic materials 0.000 claims description 21
- 238000002844 melting Methods 0.000 claims description 20
- 230000008018 melting Effects 0.000 claims description 20
- 230000002265 prevention Effects 0.000 claims description 18
- 238000009792 diffusion process Methods 0.000 claims description 17
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 16
- 238000005304 joining Methods 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 196
- 239000000155 melt Substances 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 230000003064 anti-oxidating effect Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 239000003963 antioxidant agent Substances 0.000 description 5
- 230000003078 antioxidant effect Effects 0.000 description 5
- 238000001816 cooling Methods 0.000 description 5
- 238000005336 cracking Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3431—Leadless components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3457—Solder materials or compositions; Methods of application thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81193—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
- H05K1/111—Pads for surface mounting, e.g. lay-out
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0332—Structure of the conductor
- H05K2201/0335—Layered conductors or foils
- H05K2201/0338—Layered conductor, e.g. layered metal substrate, layered finish layer or layered thin film adhesion layer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10106—Light emitting diode [LED]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
- Led Device Packages (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Wire Bonding (AREA)
Description
以下、本開示の一実施形態に係る電子部品の接合方法およびその接合構造体について説明する。本実施形態の接合方法は、電極を有する電子部品の側と、この電子部品を搭載する搭載面を有する被搭載物の側とを接合する方法である。また、この方法は、層形成工程と接合工程とを有し、後述するように金-錫合金によって接合可能なものであれば、適用することができる。以下では、電子部品を、発光ダイオードなどの発光素子とし、被搭載物をサブマウントとして説明するが、これに限定されない。
・実施例
試験用基板として石英製の基板を準備し、密着層(Cr)14(厚さ10nm)、拡散防止層(Pt)15(厚さ25nm)、密着層(Au)16(厚さ100nm)、はんだ層2(厚さ1μmもしくは2μm)、酸化防止層(Au)17(厚さ100nm)の順に積層した。はんだ層2は、はんだ層2の膜厚が1μmの試料は、錫を27.2質量%含む金-錫合金(融点は360℃)からなる層とした。はんだ層2の膜厚が2μmの試料は、錫を23.5質量%含む金-錫合金(融点は330℃)からなる層とした。接合工程では、加熱温度を膜厚1μmの試料は340℃、膜厚2μmの試料は310℃とし、設定圧力を5mbarとし、圧接時間を1分間とした。
・比較例
比較例は、加熱温度を380℃とした以外は、実施例と同じである。
2 はんだ層
3 サブマウント
4 接合層
12 第1電極
13 第2電極
14 第1密着層
15 拡散防止層
16 第2密着層
17 酸化防止層
18 中間層
Claims (10)
- 電極を有する電子部品の側と、前記電子部品を搭載する搭載面を有する被搭載物の側とを接合する電子部品の接合方法であって、
前記電子部品の前記電極の上に、錫を20質量%以上30質量%以下含む金-錫合金からなるはんだ層を形成し、前記被搭載物の前記搭載面の上に、金を主成分として含む接合層を形成する層形成工程と、
前記はんだ層と、前記接合層とを、280℃以上かつ前記金-錫合金の融点未満の温度で加熱して接合する接合工程と、を備える電子部品の接合方法。 - 前記層形成工程は、前記はんだ層の表面に金を主成分として含む酸化防止層を、さらに形成する、請求項1記載の電子部品の接合方法。
- 前記層形成工程は、前記電極の上に第1密着層を形成し、前記第1密着層の表面に前記はんだ層を形成する、請求項1または2記載の電子部品の接合方法。
- 前記層形成工程は、前記第1密着層の上に、白金族元素を主成分とする拡散防止層を介して金を主成分として含む第2密着層を形成する、請求項3に記載の電子部品の接合方法。
- 前記電子部品は、発光素子を有する、請求項1~4のいずれか1項に記載の電子部品の接合方法。
- 前記電子部品は、前記被搭載物の前記搭載面に対向する面に少なくとも2つの前記電極を有している、請求項1~5のいずれか1項に記載の電子部品の接合方法。
- 電極を有する電子部品の側と、前記電子部品を搭載する搭載面を有する被搭載物の側とが接合された電子部品の接合構造体であって、
前記電子部品の前記電極の上に位置し、錫を20質量%以上30質量%以下含む金-錫合金からなるはんだ層と、
前記被搭載物の前記搭載面の上に位置し、金を主成分とする接合層と、
前記はんだ層と前記接合層との間に位置し、前記はんだ層より融点の低い金-錫合金からなる中間層と、を備える、電子部品の接合構造体。 - 前記接合層は、金を80質量%以上含み、
前記中間層と前記接合層との間に位置する界面部分が、前記中間層よりも金の割合が大きいとともに融点の高い、請求項7に記載の電子部品の接合構造体。 - 前記電極と前記はんだ層との間に位置し、金を主成分として含む密着層をさらに備える、請求項7または8に記載の電子部品の接合構造体。
- 前記電子部品は、前記被搭載物の前記搭載面に対向する面に少なくとも2つの前記電極を有している、請求項7~9のいずれか1項に記載の電子部品の接合構造体。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018243576 | 2018-12-26 | ||
JP2018243576 | 2018-12-26 | ||
PCT/JP2019/051100 WO2020138278A1 (ja) | 2018-12-26 | 2019-12-26 | 電子部品の接合方法および接合構造体 |
Publications (2)
Publication Number | Publication Date |
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JPWO2020138278A1 JPWO2020138278A1 (ja) | 2021-11-04 |
JP7223772B2 true JP7223772B2 (ja) | 2023-02-16 |
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JP2020562400A Active JP7223772B2 (ja) | 2018-12-26 | 2019-12-26 | 電子部品の接合方法および接合構造体 |
Country Status (5)
Country | Link |
---|---|
US (1) | US12068442B2 (ja) |
EP (1) | EP3905343A4 (ja) |
JP (1) | JP7223772B2 (ja) |
CN (1) | CN113287206A (ja) |
WO (1) | WO2020138278A1 (ja) |
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JP2006210829A (ja) | 2005-01-31 | 2006-08-10 | Shin Etsu Handotai Co Ltd | 発光素子及び発光素子の製造方法 |
JP2007059760A (ja) | 2005-08-26 | 2007-03-08 | Victor Co Of Japan Ltd | 素子の接合方法 |
JP2007128982A (ja) | 2005-11-01 | 2007-05-24 | Nec Corp | 半導体バンプ接続構造体及びその製造方法 |
JP2007329156A (ja) | 2006-06-06 | 2007-12-20 | Fujikura Ltd | 半導体装置およびその製造方法、並びに電子部品 |
JP2011155149A (ja) | 2010-01-27 | 2011-08-11 | Shinko Electric Ind Co Ltd | 配線基板及びその製造方法並びに半導体パッケージ |
JP2012089578A (ja) | 2010-10-15 | 2012-05-10 | Sanyo Electric Co Ltd | 半導体レーザ装置の製造方法、半導体レーザ装置および光装置 |
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-
2019
- 2019-12-26 JP JP2020562400A patent/JP7223772B2/ja active Active
- 2019-12-26 CN CN201980086111.XA patent/CN113287206A/zh active Pending
- 2019-12-26 US US17/418,683 patent/US12068442B2/en active Active
- 2019-12-26 WO PCT/JP2019/051100 patent/WO2020138278A1/ja unknown
- 2019-12-26 EP EP19902825.9A patent/EP3905343A4/en active Pending
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2006210829A (ja) | 2005-01-31 | 2006-08-10 | Shin Etsu Handotai Co Ltd | 発光素子及び発光素子の製造方法 |
JP2007059760A (ja) | 2005-08-26 | 2007-03-08 | Victor Co Of Japan Ltd | 素子の接合方法 |
JP2007128982A (ja) | 2005-11-01 | 2007-05-24 | Nec Corp | 半導体バンプ接続構造体及びその製造方法 |
JP2007329156A (ja) | 2006-06-06 | 2007-12-20 | Fujikura Ltd | 半導体装置およびその製造方法、並びに電子部品 |
JP2011155149A (ja) | 2010-01-27 | 2011-08-11 | Shinko Electric Ind Co Ltd | 配線基板及びその製造方法並びに半導体パッケージ |
JP2012089578A (ja) | 2010-10-15 | 2012-05-10 | Sanyo Electric Co Ltd | 半導体レーザ装置の製造方法、半導体レーザ装置および光装置 |
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JP2015138870A (ja) | 2014-01-22 | 2015-07-30 | 豊田合成株式会社 | 発光素子、発光装置およびその製造方法 |
Also Published As
Publication number | Publication date |
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CN113287206A (zh) | 2021-08-20 |
JPWO2020138278A1 (ja) | 2021-11-04 |
EP3905343A4 (en) | 2022-09-28 |
EP3905343A1 (en) | 2021-11-03 |
US20220069185A1 (en) | 2022-03-03 |
US12068442B2 (en) | 2024-08-20 |
WO2020138278A1 (ja) | 2020-07-02 |
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