JP7199435B2 - 発光チップ - Google Patents
発光チップ Download PDFInfo
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- JP7199435B2 JP7199435B2 JP2020527964A JP2020527964A JP7199435B2 JP 7199435 B2 JP7199435 B2 JP 7199435B2 JP 2020527964 A JP2020527964 A JP 2020527964A JP 2020527964 A JP2020527964 A JP 2020527964A JP 7199435 B2 JP7199435 B2 JP 7199435B2
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- semiconductor layer
- led stack
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- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/32—Stacked devices having two or more layers, each emitting at different wavelengths
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
このように、第1LEDスタック1230、第2LEDスタック1330、および第3LEDスタック1430は、異なる基板上に成長可能であり、その形成順序は特定の順序に限定されない。
Claims (21)
- 発光チップであって、
互いに垂直に積層された第1発光サブユニット、第2発光サブユニット、および第3発光サブユニットを含む発光構造体と、
前記発光構造体の少なくとも一部を覆う第1パッシベーション層と、を含み、
前記発光構造体は、底部から第1発光サブユニット、第2発光サブユニット、第3発光サブユニットの順に積層された構造を有し、
前記第1パッシベーション層は、前記第1、第2および第3サブユニットからの光が前記発光チップから放射されることを許容するように前記発光構造体を露出させる底部表面を有し、
前記第1発光サブユニットは、第1透明電極および第1メサ構造を含み、前記第1メサ構造は、互いに垂直に積層された第1n型半導体層、第1活性層、および第1p型半導体層を有し、
前記第2発光サブユニットは、第2透明電極および第2メサ構造を含み、前記第2メサ構造は、互いに垂直に積層された第2p型半導体層、第2活性層、および第2n型半導体層を有し、
前記第3発光サブユニットは、第3透明電極および第3メサ構造を含み、前記第3メサ構造は、互いに垂直に積層された第3p型半導体層、第3活性層、および第3n型半導体層を有し、
前記第3n型半導体層は、前記第3透明電極より小さい面積を有し、前記第3透明電極の一部を露出させ、
前記第3透明電極は、前記第2n型半導体層より小さい面積を有し、前記第2n型半導体層の一部を露出させ、
前記第2n型半導体層は、前記第2透明電極より小さい面積を有し、前記第2透明電極の一部を露出させ、
前記第2透明電極は、前記第1透明電極より小さい面積を有し、前記第1透明電極の一部を露出させ、
前記第1透明電極は、前記第1n型半導体層より小さい面積を有し、前記第1n型半導体層の一部を露出させる、発光チップ。 - 前記第1パッシベーション層は、重合体材料を含む、請求項1に記載の発光チップ。
- 前記第1パッシベーション層は、ポリイミドおよびエポキシモールディングコンパウンド(EMC)のうちの少なくとも1つを含む、請求項2に記載の発光チップ。
- 前記第1n型半導体層と電気的に接続された第1薄膜導電パターンと、
前記第2n型半導体層と電気的に接続された第2薄膜導電パターンと、
前記第3n型半導体層と電気的に接続された第3薄膜導電パターンと、
前記第1、第2および第3p型半導体層と電気的に接続された第4薄膜導電パターンとをさらに含む、請求項1に記載の発光チップ。 - 前記第1p型半導体層と電気的に接続された第1薄膜導電パターンと、
前記第2p型半導体層と電気的に接続された第2薄膜導電パターンと、
前記第3p型半導体層と電気的に接続された第3薄膜導電パターンと、
前記第1、第2および第3n型半導体層と電気的に接続された第4薄膜導電パターンとをさらに含む、請求項1に記載の発光チップ。 - 前記第3透明電極のうち、前記第3n型半導体層と重畳しない部分は、前記第3n型半導体層と重畳する部分より薄く、
前記第2透明電極のうち、前記第2n型半導体層と重畳しない部分は、前記第2n型半導体層と重畳する部分より薄く、
前記第1透明電極のうち、前記第2透明電極と重畳しない部分は、前記第2透明電極と重畳する部分より薄い、請求項1に記載の発光チップ。 - 前記第1透明電極と重畳しない前記第1n型半導体層の一部の上に配置され、前記第1n型半導体層と電気的に接続される第1導電パターンと、
前記第2透明電極と重畳しない前記第1透明電極の一部および前記第2n型半導体層と重畳しない前記第2透明電極の一部の上に配置され、前記第1および第2透明電極と電気的に接続された第2導電パターンと、
前記第3透明電極と重畳しない前記第2n型半導体層の一部の上に配置され、前記第2n型半導体層と電気的に接続された第3導電パターンと、
前記第3n型半導体層と重畳しない前記第3透明電極の一部の上に配置され、前記第3透明電極と電気的に接続された第4導電パターンと、
前記第3n型半導体層上に配置され、前記第3n型半導体層と電気的に接続された第5導電パターンとをさらに含む、請求項1に記載の発光チップ。 - 前記第1導電パターンと電気的に接続された第1薄膜導電パターンと、
前記第2および第4導電パターンと電気的に接続された第2薄膜導電パターンと、
前記第3導電パターンと電気的に接続された第3薄膜導電パターンと、
前記第5導電パターンと電気的に接続された第4薄膜導電パターンとをさらに含む、請求項7に記載の発光チップ。 - 前記発光構造体は、上端表面から減少する幅を有し、
前記第1n型半導体層は、前記第1メサ構造の側壁から延びた第1n型拡張半導体層を含み、
前記第1、第2、第3および第4薄膜導電パターンのそれぞれは、前記第3発光サブユニットの上端表面から前記第1n型拡張半導体層に延び、前記第1n型拡張半導体層を覆い、コネクタ部分を含む、請求項8に記載の発光チップ。 - 前記第1パッシベーション層を貫通し、前記第1n型拡張半導体層上に配置された前記第1薄膜導電パターンのコネクタ部分と電気的に接続される第1ビアコンタクトと、
前記第1パッシベーション層を貫通し、前記第1n型拡張半導体層上に配置された前記第2薄膜導電パターンのコネクタ部分と電気的に接続された第2ビアコンタクトと、
前記第1パッシベーション層を貫通し、前記第1n型拡張半導体層上に配置された前記第3薄膜導電パターンのコネクタ部分と電気的に接続された第3ビアコンタクトと、
前記第1パッシベーション層を貫通し、前記第1n型拡張半導体層上に配置された前記第4薄膜導電パターンと電気的に接続された第4ビアコンタクトとをさらに含む、請求項9に記載の発光チップ。 - 前記第1、第2、第3および第4ビアコンタクトのそれぞれは、前記第1、第2および第3活性層の少なくとも一部と重なる、請求項10に記載の発光チップ。
- 前記第1ビアコンタクトは、前記第1導電パターンの少なくとも一部と重なる、請求項10に記載の発光チップ。
- 前記第1パッシベーション層上に配置された第2パッシベーション層をさらに含み、前記第1、第2、第3および第4ビアコンタクトとそれぞれ電気的に導通するように構成された第5、第6、第7および第8ビアコンタクトを含む、請求項10に記載の発光チップ。
- 前記第1パッシベーション層上に配置された貫通シリコンビア(TSV)基板をさらに含み、前記TSV基板は、前記第1、第2、第3および第4ビアコンタクトにそれぞれ対応するパターンを含む、請求項10に記載の発光チップ。
- 前記発光構造体は、少なくとも1つのメサ構造を有し、
前記発光構造体は、階段状構造を有する少なくとも1つの側壁を有する、請求項1に記載の発光チップ。 - 前記発光構造体は、傾斜側壁を有する、請求項15に記載の発光チップ。
- 前記第1および第2発光サブユニットの間に配置された第1カラーフィルタおよび第1ボンディング部分と、
前記第2および第3発光サブユニットの間に配置された第2カラーフィルタおよび第2ボンディング部分と、をさらに含む、請求項1に記載の発光チップ。 - 前記発光構造体は、約10,000μm2未満の表面積を有するマイクロ発光ダイオードを含む、請求項1に記載の発光チップ。
- 前記第1パッシベーション層の底部表面と前記第1発光サブユニットの表面は、実質的に同一平面に配置される、請求項1に記載の発光チップ。
- 前記第1発光サブユニットは、赤色、緑色または青色光のうちの1つを放射するように構成され、
前記第2発光サブユニットは、赤色、緑色または青色光のうちの前記第1発光サブユニットとは異なる他の1つを放射するように構成され、前記第1発光サブユニット上に積層され、
前記第3発光サブユニットは、赤色、緑色または青色光のうちの前記第1及び第2発光サブユニットとは異なる他の1つを放射するように構成され、前記第2発光サブユニット上に積層される、請求項1に記載の発光チップ。 - 前記第1および第2発光サブユニットの間および第2および第3発光サブユニットの間にはカラーフィルタが配置されない、請求項20に記載の発光チップ。
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US16/198,784 US11282981B2 (en) | 2017-11-27 | 2018-11-22 | Passivation covered light emitting unit stack |
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Families Citing this family (54)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107946343A (zh) * | 2017-11-15 | 2018-04-20 | 江苏集萃有机光电技术研究所有限公司 | 像素结构及oled面板 |
US11282981B2 (en) * | 2017-11-27 | 2022-03-22 | Seoul Viosys Co., Ltd. | Passivation covered light emitting unit stack |
US10892296B2 (en) | 2017-11-27 | 2021-01-12 | Seoul Viosys Co., Ltd. | Light emitting device having commonly connected LED sub-units |
US10892297B2 (en) | 2017-11-27 | 2021-01-12 | Seoul Viosys Co., Ltd. | Light emitting diode (LED) stack for a display |
US11527519B2 (en) | 2017-11-27 | 2022-12-13 | Seoul Viosys Co., Ltd. | LED unit for display and display apparatus having the same |
US10748881B2 (en) | 2017-12-05 | 2020-08-18 | Seoul Viosys Co., Ltd. | Light emitting device with LED stack for display and display apparatus having the same |
US10886327B2 (en) | 2017-12-14 | 2021-01-05 | Seoul Viosys Co., Ltd. | Light emitting stacked structure and display device having the same |
US11552057B2 (en) | 2017-12-20 | 2023-01-10 | Seoul Viosys Co., Ltd. | LED unit for display and display apparatus having the same |
US11522006B2 (en) | 2017-12-21 | 2022-12-06 | Seoul Viosys Co., Ltd. | Light emitting stacked structure and display device having the same |
US11552061B2 (en) | 2017-12-22 | 2023-01-10 | Seoul Viosys Co., Ltd. | Light emitting device with LED stack for display and display apparatus having the same |
US11114499B2 (en) | 2018-01-02 | 2021-09-07 | Seoul Viosys Co., Ltd. | Display device having light emitting stacked structure |
US10784240B2 (en) | 2018-01-03 | 2020-09-22 | Seoul Viosys Co., Ltd. | Light emitting device with LED stack for display and display apparatus having the same |
US10879419B2 (en) * | 2018-08-17 | 2020-12-29 | Seoul Viosys Co., Ltd. | Light emitting device |
JP7348520B2 (ja) * | 2018-12-25 | 2023-09-21 | 日亜化学工業株式会社 | 発光装置及び表示装置 |
US11508876B2 (en) * | 2018-12-31 | 2022-11-22 | Seoul Viosys Co., Ltd. | Light emitting device package and display device having the same |
KR20200088959A (ko) * | 2019-01-15 | 2020-07-24 | 삼성디스플레이 주식회사 | 발광 장치, 이를 포함하는 표시 장치 및 표시 장치의 제조 방법 |
TWI793318B (zh) * | 2019-05-03 | 2023-02-21 | 優顯科技股份有限公司 | 微半導體堆疊結構、及其電子裝置 |
US11901397B2 (en) | 2019-05-14 | 2024-02-13 | Seoul Viosys Co., Ltd. | LED chip having fan-out structure and manufacturing method of the same |
BR112021022881A2 (pt) * | 2019-05-14 | 2022-01-04 | Seoul Viosys Co Ltd | Pacote emissor de luz |
US11855121B2 (en) | 2019-05-14 | 2023-12-26 | Seoul Viosys Co., Ltd. | LED chip and manufacturing method of the same |
US11756980B2 (en) | 2019-05-14 | 2023-09-12 | Seoul Viosys Co., Ltd. | LED chip package and manufacturing method of the same |
WO2020257391A1 (en) | 2019-06-19 | 2020-12-24 | Hong Kong Beida Jade Bird Display Limited | Systems and methods for coaxial multi-color led |
KR102213343B1 (ko) * | 2019-07-01 | 2021-02-08 | 한국과학기술원 | 다색 픽셀 어레이를 갖는 마이크로 led 디스플레이 및 그의 구동 회로와 결합에 따른 제조 방법 |
CN110211950B (zh) * | 2019-07-04 | 2024-04-30 | 深圳市思坦科技有限公司 | 一种发光器件、发光器件的制备方法及显示装置 |
CN110416243B (zh) * | 2019-07-26 | 2021-11-12 | 成都辰显光电有限公司 | 一种显示面板及其制作方法 |
US10971650B2 (en) * | 2019-07-29 | 2021-04-06 | Lextar Electronics Corporation | Light emitting device |
US11362133B2 (en) | 2019-09-11 | 2022-06-14 | Jade Bird Display (shanghai) Limited | Multi-color LED pixel unit and micro-LED display panel |
US10879217B1 (en) * | 2019-09-11 | 2020-12-29 | Jade Bird Display (shanghai) Limited | Multi-color LED pixel unit and micro-LED display panel |
US11398462B2 (en) | 2019-09-18 | 2022-07-26 | Seoul Viosys Co., Ltd. | Light emitting device for display and light emitting package having the same |
US11038088B2 (en) | 2019-10-14 | 2021-06-15 | Lextar Electronics Corporation | Light emitting diode package |
CN212934611U (zh) * | 2019-10-23 | 2021-04-09 | 首尔伟傲世有限公司 | 显示装置 |
US11810944B2 (en) * | 2019-10-23 | 2023-11-07 | Seoul Viosys Co., Ltd. | LED display apparatus |
JP2023501273A (ja) * | 2019-10-28 | 2023-01-18 | ソウル バイオシス カンパニー リミテッド | ディスプレイ用発光素子及びそれを有するledディスプレイ装置 |
US11658275B2 (en) * | 2019-10-28 | 2023-05-23 | Seoul Viosys Co., Ltd. | Light emitting device for display and LED display apparatus having the same |
JP2023501269A (ja) * | 2019-10-28 | 2023-01-18 | ソウル バイオシス カンパニー リミテッド | ディスプレイ用発光素子及びそれを有するledディスプレイ装置 |
US11817435B2 (en) * | 2019-10-28 | 2023-11-14 | Seoul Viosys Co., Ltd. | Light emitting device for display and LED display apparatus having the same |
US11489002B2 (en) * | 2019-10-29 | 2022-11-01 | Seoul Viosys Co., Ltd. | LED display apparatus |
US11664355B2 (en) * | 2019-12-02 | 2023-05-30 | Seoul Semiconductor Co., Ltd. | Display apparatus |
US11757073B2 (en) * | 2019-12-28 | 2023-09-12 | Seoul Viosys Co., Ltd. | Light emitting device and LED display apparatus having the same |
US11626391B2 (en) * | 2020-01-22 | 2023-04-11 | Seoul Viosys Co., Ltd. | Light emitting device and display apparatus having the same |
US20210296536A1 (en) * | 2020-03-17 | 2021-09-23 | Epistar Corporation | Semiconductor light-emitting device |
US11961873B2 (en) | 2020-05-11 | 2024-04-16 | Seoul Viosys Co., Ltd. | Light emitting device for display and display apparatus having the same |
WO2021247894A1 (en) * | 2020-06-03 | 2021-12-09 | Jade Bird Display (shanghai) Limited | Systems and methods for multi-color led pixel unit with horizontal light emission |
US12002912B2 (en) * | 2020-07-31 | 2024-06-04 | Seoul Viosys Co., Ltd. | Light emitting device and display apparatus having the same |
KR20220018374A (ko) * | 2020-08-06 | 2022-02-15 | 엘지디스플레이 주식회사 | 발광 소자 및 웨이퍼 |
US11476299B2 (en) * | 2020-08-31 | 2022-10-18 | Hong Kong Beida Jade Bird Display Limited | Double color micro LED display panel |
US11646300B2 (en) * | 2020-09-01 | 2023-05-09 | Jade Bird Display (shanghai) Limited | Double color micro LED display panel |
US11490519B2 (en) * | 2021-01-11 | 2022-11-01 | X-Celeprint Limited | Printed stacked micro-devices |
CN113270442B (zh) * | 2021-06-30 | 2023-09-19 | 錼创显示科技股份有限公司 | 微型发光二极管显示设备 |
TWI778790B (zh) * | 2021-09-15 | 2022-09-21 | 友達光電股份有限公司 | 畫素結構 |
WO2023102839A1 (zh) * | 2021-12-09 | 2023-06-15 | 厦门市芯颖显示科技有限公司 | 叠层发光单元及其制备方法和显示面板 |
CN114725150B (zh) * | 2022-03-14 | 2023-10-03 | 湖南大学 | Micro-LED器件及微显示屏 |
CN114725276B (zh) * | 2022-03-14 | 2023-10-03 | 湖南大学 | Micro-LED分立器件 |
WO2024130717A1 (en) * | 2022-12-23 | 2024-06-27 | Jade Bird Display (shanghai) Limited | Micro led structure and micro led panel |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005019874A (ja) | 2003-06-27 | 2005-01-20 | Matsushita Electric Ind Co Ltd | Led、ledチップ、ledモジュール、および照明装置 |
JP2006319099A (ja) | 2005-05-12 | 2006-11-24 | Oki Data Corp | 半導体装置、プリントヘッド及び画像形成装置 |
US20090078955A1 (en) | 2007-09-26 | 2009-03-26 | Iii-N Technlogy, Inc | Micro-Emitter Array Based Full-Color Micro-Display |
JP2011151346A (ja) | 2009-12-24 | 2011-08-04 | Stanley Electric Co Ltd | フェイスアップ型光半導体装置 |
JP2017011202A (ja) | 2015-06-25 | 2017-01-12 | 京セラ株式会社 | 発光装置 |
JP2017513234A (ja) | 2014-04-18 | 2017-05-25 | ポステク アカデミー−インダストリー ファウンデーション | 窒素窒化物半導体発光素子及びその製造方法 |
US20170288093A1 (en) | 2016-04-04 | 2017-10-05 | Samsung Electronics Co., Ltd. | Led light source module and display device |
Family Cites Families (173)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3259931B2 (ja) | 1992-04-17 | 2002-02-25 | シャープ株式会社 | 半導体発光素子および半導体表示装置 |
JPH07254732A (ja) * | 1994-03-15 | 1995-10-03 | Toshiba Corp | 半導体発光装置 |
FR2726126A1 (fr) | 1994-10-24 | 1996-04-26 | Mitsubishi Electric Corp | Procede de fabrication de dispositifs a diodes electroluminescentes a lumiere visible |
US5703436A (en) | 1994-12-13 | 1997-12-30 | The Trustees Of Princeton University | Transparent contacts for organic devices |
US5707745A (en) | 1994-12-13 | 1998-01-13 | The Trustees Of Princeton University | Multicolor organic light emitting devices |
US5583349A (en) | 1995-11-02 | 1996-12-10 | Motorola | Full color light emitting diode display |
US6046543A (en) | 1996-12-23 | 2000-04-04 | The Trustees Of Princeton University | High reliability, high efficiency, integratable organic light emitting devices and methods of producing same |
KR100298205B1 (ko) | 1998-05-21 | 2001-08-07 | 오길록 | 고집적삼색발광소자및그제조방법 |
US6459100B1 (en) | 1998-09-16 | 2002-10-01 | Cree, Inc. | Vertical geometry ingan LED |
US6853411B2 (en) | 2001-02-20 | 2005-02-08 | Eastman Kodak Company | Light-producing high aperture ratio display having aligned tiles |
JP3643328B2 (ja) * | 2001-08-21 | 2005-04-27 | ファナック株式会社 | 2次元ldアレイ発光装置 |
TW522534B (en) * | 2001-09-11 | 2003-03-01 | Hsiu-Hen Chang | Light source of full color LED using die bonding and packaging technology |
JP2003197968A (ja) | 2001-12-18 | 2003-07-11 | Shuko Cho | 透明導電層及び反射層で直接結合されたチップの積み重ねによるフルカラー発光ダイオード光源のパッケージ構造 |
CN100595938C (zh) * | 2002-08-01 | 2010-03-24 | 日亚化学工业株式会社 | 半导体发光元件及其制造方法、使用此的发光装置 |
US6717358B1 (en) * | 2002-10-09 | 2004-04-06 | Eastman Kodak Company | Cascaded organic electroluminescent devices with improved voltage stability |
EP1482566A3 (en) | 2003-05-28 | 2004-12-08 | Chang Hsiu Hen | Light emitting diode electrode structure and full color light emitting diode formed by overlap cascaded die bonding |
JP2005072323A (ja) | 2003-08-26 | 2005-03-17 | Oki Data Corp | 半導体装置 |
CN1275337C (zh) | 2003-09-17 | 2006-09-13 | 北京工大智源科技发展有限公司 | 高效高亮度多有源区隧道再生白光发光二极管 |
JP2005190768A (ja) * | 2003-12-25 | 2005-07-14 | Toyota Industries Corp | 照明装置 |
EP1716605B1 (en) * | 2004-02-09 | 2009-06-03 | Toyota Industries Corp. | Transflective display having full color oled backlight |
ES2394073T3 (es) | 2004-03-26 | 2013-01-16 | Panasonic Corporation | Elemento orgánico emisor de luz |
US7528810B2 (en) * | 2004-05-25 | 2009-05-05 | Victor Company Of Japan, Limited | Display with multiple emission layers |
US20070170444A1 (en) * | 2004-07-07 | 2007-07-26 | Cao Group, Inc. | Integrated LED Chip to Emit Multiple Colors and Method of Manufacturing the Same |
US7271420B2 (en) | 2004-07-07 | 2007-09-18 | Cao Group, Inc. | Monolitholic LED chip to emit multiple colors |
JP2006059992A (ja) * | 2004-08-19 | 2006-03-02 | Shinko Electric Ind Co Ltd | 電子部品内蔵基板の製造方法 |
US20080128728A1 (en) | 2004-09-10 | 2008-06-05 | Luminus Devices, Inc. | Polarized light-emitting devices and methods |
US8017955B2 (en) | 2004-11-19 | 2011-09-13 | Koninklijke Philips Electronics N.V. | Composite LED modules |
KR100665120B1 (ko) | 2005-02-28 | 2007-01-09 | 삼성전기주식회사 | 수직구조 질화물 반도체 발광소자 |
EP1862847A4 (en) * | 2005-03-18 | 2009-04-22 | Fujitsu Ltd | DISPLAY DEVICE AND MANUFACTURING METHOD THEREFOR |
KR100672535B1 (ko) | 2005-07-25 | 2007-01-24 | 엘지전자 주식회사 | 유기 el 소자 및 그 제조방법 |
JP4869661B2 (ja) | 2005-08-23 | 2012-02-08 | 株式会社Jvcケンウッド | 表示装置 |
JP2007095844A (ja) | 2005-09-27 | 2007-04-12 | Oki Data Corp | 半導体発光複合装置 |
US8089074B2 (en) | 2005-09-30 | 2012-01-03 | Seoul Opto Device Co., Ltd. | Light emitting device having vertically stacked light emitting diodes |
JP2007114278A (ja) | 2005-10-18 | 2007-05-10 | Fuji Xerox Co Ltd | 光アドレス型空間光変調素子の駆動方法、および光アドレス型空間光変調素子駆動装置 |
WO2007083918A1 (en) | 2006-01-18 | 2007-07-26 | Lg Chem. Ltd. | Oled having stacked organic light-emitting units |
US7737451B2 (en) | 2006-02-23 | 2010-06-15 | Cree, Inc. | High efficiency LED with tunnel junction layer |
US20070222922A1 (en) * | 2006-03-22 | 2007-09-27 | Eastman Kodak Company | Graded contrast enhancing layer for use in displays |
US7808013B2 (en) | 2006-10-31 | 2010-10-05 | Cree, Inc. | Integrated heat spreaders for light emitting devices (LEDs) and related assemblies |
JP5030742B2 (ja) | 2006-11-30 | 2012-09-19 | 株式会社半導体エネルギー研究所 | 発光素子 |
KR20080054626A (ko) | 2006-12-13 | 2008-06-18 | 엘지디스플레이 주식회사 | 유기 전계발광표시소자 및 그 제조방법 |
JP2010517274A (ja) | 2007-01-22 | 2010-05-20 | クリー レッド ライティング ソリューションズ、インコーポレイテッド | 外部で相互接続された発光素子のアレイを用いる照明デバイスとその製造方法 |
JP2008263127A (ja) | 2007-04-13 | 2008-10-30 | Toshiba Corp | Led装置 |
US7687812B2 (en) | 2007-06-15 | 2010-03-30 | Tpo Displays Corp. | Light-emitting diode arrays and methods of manufacture |
US20080308819A1 (en) | 2007-06-15 | 2008-12-18 | Tpo Displays Corp. | Light-Emitting Diode Arrays and Methods of Manufacture |
US9136498B2 (en) | 2007-06-27 | 2015-09-15 | Qd Vision, Inc. | Apparatus and method for modulating photon output of a quantum dot light emitting device |
DE102007030129A1 (de) | 2007-06-29 | 2009-01-02 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Mehrzahl optoelektronischer Bauelemente und optoelektronisches Bauelement |
US8022421B2 (en) | 2007-11-06 | 2011-09-20 | Industrial Technology Institute | Light emitting module having LED pixels and method of forming the same |
US7732803B2 (en) | 2008-05-01 | 2010-06-08 | Bridgelux, Inc. | Light emitting device having stacked multiple LEDS |
KR101458958B1 (ko) | 2008-06-10 | 2014-11-13 | 삼성전자주식회사 | 반도체 칩, 반도체 패키지 및 반도체 칩의 제조 방법 |
DE102008030584A1 (de) | 2008-06-27 | 2009-12-31 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Bauelementes und optoelektronisches Bauelement |
KR101332794B1 (ko) * | 2008-08-05 | 2013-11-25 | 삼성전자주식회사 | 발광 장치, 이를 포함하는 발광 시스템, 상기 발광 장치 및발광 시스템의 제조 방법 |
US8414304B2 (en) * | 2008-08-19 | 2013-04-09 | Plextronics, Inc. | Organic light emitting diode lighting devices |
JP5097057B2 (ja) | 2008-08-29 | 2012-12-12 | 株式会社沖データ | 表示装置 |
JP4555880B2 (ja) * | 2008-09-04 | 2010-10-06 | 株式会社沖データ | 積層半導体発光装置及び画像形成装置 |
JP5024247B2 (ja) | 2008-09-12 | 2012-09-12 | 日立電線株式会社 | 発光素子 |
TW201017863A (en) | 2008-10-03 | 2010-05-01 | Versitech Ltd | Semiconductor color-tunable broadband light sources and full-color microdisplays |
EP2357679B1 (en) | 2008-11-14 | 2018-08-29 | Samsung Electronics Co., Ltd. | Vertical/horizontal light-emitting diode for semiconductor |
WO2010104610A2 (en) | 2009-03-13 | 2010-09-16 | Tessera Technologies Hungary Kft. | Stacked microelectronic assemblies having vias extending through bond pads |
KR101077789B1 (ko) | 2009-08-07 | 2011-10-28 | 한국과학기술원 | Led 디스플레이 제조 방법 및 이에 의하여 제조된 led 디스플레이 |
JP5769724B2 (ja) * | 2009-11-24 | 2015-08-26 | ユニバーシティ オブ フロリダ リサーチ ファウンデーション,インク.University Of Florida Reseatch Foundation,Inc. | 赤外線放射を感知する方法および装置 |
US8642363B2 (en) | 2009-12-09 | 2014-02-04 | Nano And Advanced Materials Institute Limited | Monolithic full-color LED micro-display on an active matrix panel manufactured using flip-chip technology |
US9236532B2 (en) | 2009-12-14 | 2016-01-12 | Seoul Viosys Co., Ltd. | Light emitting diode having electrode pads |
KR101631652B1 (ko) | 2009-12-29 | 2016-06-20 | 삼성전자주식회사 | 광민감성 투명 산화물 반도체 재료를 이용한 이미지 센서 |
KR100999779B1 (ko) * | 2010-02-01 | 2010-12-08 | 엘지이노텍 주식회사 | 발광소자, 발광소자의 제조방법 및 발광소자 패키지 |
US20110204376A1 (en) * | 2010-02-23 | 2011-08-25 | Applied Materials, Inc. | Growth of multi-junction led film stacks with multi-chambered epitaxy system |
US8866131B2 (en) | 2010-04-02 | 2014-10-21 | Hitachi, Ltd. | Organic light-emitting device and light source apparatus using same |
KR101252032B1 (ko) | 2010-07-08 | 2013-04-10 | 삼성전자주식회사 | 반도체 발광소자 및 이의 제조방법 |
JP5333382B2 (ja) | 2010-08-27 | 2013-11-06 | 豊田合成株式会社 | 発光素子 |
US9070851B2 (en) | 2010-09-24 | 2015-06-30 | Seoul Semiconductor Co., Ltd. | Wafer-level light emitting diode package and method of fabricating the same |
US8163581B1 (en) * | 2010-10-13 | 2012-04-24 | Monolith IC 3D | Semiconductor and optoelectronic devices |
US8283215B2 (en) | 2010-10-13 | 2012-10-09 | Monolithic 3D Inc. | Semiconductor and optoelectronic devices |
KR20120040011A (ko) | 2010-10-18 | 2012-04-26 | 한국전자통신연구원 | 발광 다이오드 |
JP5777879B2 (ja) | 2010-12-27 | 2015-09-09 | ローム株式会社 | 発光素子、発光素子ユニットおよび発光素子パッケージ |
CN102593303A (zh) | 2011-01-05 | 2012-07-18 | 晶元光电股份有限公司 | 具有栓塞的发光元件 |
US20120236532A1 (en) | 2011-03-14 | 2012-09-20 | Koo Won-Hoe | Led engine for illumination |
JP5854419B2 (ja) | 2011-03-18 | 2016-02-09 | 国立大学法人山口大学 | 多波長発光素子及びその製造方法 |
WO2012128188A1 (en) | 2011-03-23 | 2012-09-27 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and lighting device |
JP5095840B2 (ja) | 2011-04-26 | 2012-12-12 | 株式会社東芝 | 半導体発光素子 |
US9052096B2 (en) | 2011-04-27 | 2015-06-09 | Jx Nippon Oil & Energy Corporation | Light extraction transparent substrate for organic EL element, and organic EL element using the same |
TW201248945A (en) | 2011-05-31 | 2012-12-01 | Chi Mei Lighting Tech Corp | Light-emitting diode device and method for manufacturing the same |
US8884316B2 (en) | 2011-06-17 | 2014-11-11 | Universal Display Corporation | Non-common capping layer on an organic device |
KR101810047B1 (ko) * | 2011-07-28 | 2017-12-19 | 삼성디스플레이 주식회사 | 유기발광표시장치 및 그 제조방법 |
JP2013070030A (ja) * | 2011-09-06 | 2013-04-18 | Sony Corp | 撮像素子、電子機器、並びに、情報処理装置 |
KR101902392B1 (ko) | 2011-10-26 | 2018-10-01 | 엘지이노텍 주식회사 | 발광 소자 |
KR20130104612A (ko) | 2012-03-14 | 2013-09-25 | 서울바이오시스 주식회사 | 발광 다이오드 및 그것을 제조하는 방법 |
US20130264587A1 (en) | 2012-04-04 | 2013-10-10 | Phostek, Inc. | Stacked led device using oxide bonding |
US8835948B2 (en) | 2012-04-19 | 2014-09-16 | Phostek, Inc. | Stacked LED device with diagonal bonding pads |
TW201344955A (zh) | 2012-04-27 | 2013-11-01 | Phostek Inc | 發光二極體裝置 |
TWI572068B (zh) | 2012-12-07 | 2017-02-21 | 晶元光電股份有限公司 | 發光元件 |
US9257665B2 (en) | 2012-09-14 | 2016-02-09 | Universal Display Corporation | Lifetime OLED display |
US8946052B2 (en) * | 2012-09-26 | 2015-02-03 | Sandia Corporation | Processes for multi-layer devices utilizing layer transfer |
KR20140064393A (ko) * | 2012-11-20 | 2014-05-28 | 서울반도체 주식회사 | 백라이트 유닛 |
DE202013012758U1 (de) * | 2012-12-06 | 2019-04-29 | Seoul Viosys Co., Ltd. | Lichtemittierende Diode und Anwendung dafür |
DE102013112602B4 (de) | 2012-12-18 | 2020-11-12 | Lg Display Co., Ltd. | Weiße organische Lichtemissionsvorrichtung |
US20140191243A1 (en) | 2013-01-08 | 2014-07-10 | University Of Florida Research Foundation, Inc. | Patterned articles and light emitting devices therefrom |
US9443833B2 (en) | 2013-01-31 | 2016-09-13 | Nthdegree Technologies Worldwide Inc. | Transparent overlapping LED die layers |
JP2014175427A (ja) | 2013-03-07 | 2014-09-22 | Toshiba Corp | 半導体発光素子及びその製造方法 |
TW201438188A (zh) | 2013-03-25 | 2014-10-01 | Miracle Technology Co Ltd | 堆疊式發光二極體陣列結構 |
WO2014185075A1 (ja) | 2013-05-17 | 2014-11-20 | パナソニックIpマネジメント株式会社 | 有機エレクトロルミネッセンス素子 |
CN105165123B (zh) | 2013-05-17 | 2017-06-23 | 松下知识产权经营株式会社 | 有机电致发光元件及照明装置 |
JP2015012044A (ja) | 2013-06-26 | 2015-01-19 | 株式会社東芝 | 半導体発光素子 |
KR102050461B1 (ko) | 2013-06-28 | 2019-11-29 | 엘지디스플레이 주식회사 | 유기 발광 소자 |
JP2015012244A (ja) * | 2013-07-01 | 2015-01-19 | 株式会社東芝 | 半導体発光素子 |
TWI686971B (zh) | 2013-08-09 | 2020-03-01 | 日商半導體能源研究所股份有限公司 | 發光元件、顯示模組、照明模組、發光裝置、顯示裝置、電子裝置、及照明裝置 |
DE102013109451B9 (de) | 2013-08-30 | 2017-07-13 | Osram Oled Gmbh | Verfahren zur Herstellung eines optoelektronischen Bauelements |
JP6497647B2 (ja) | 2013-12-24 | 2019-04-10 | パナソニックIpマネジメント株式会社 | 表示装置及び表示装置の製造方法 |
KR101452801B1 (ko) | 2014-03-25 | 2014-10-22 | 광주과학기술원 | 발광다이오드 및 이의 제조방법 |
KR20150131522A (ko) | 2014-05-15 | 2015-11-25 | 엘지디스플레이 주식회사 | 유기 발광 표시 소자 디스플레이 패널 |
US9831387B2 (en) | 2014-06-14 | 2017-11-28 | Hiphoton Co., Ltd. | Light engine array |
JP2016027361A (ja) | 2014-07-01 | 2016-02-18 | 株式会社リコー | エレクトロクロミック表示装置およびその製造方法、駆動方法 |
GB201413578D0 (en) | 2014-07-31 | 2014-09-17 | Infiniled Ltd | A colour iled display on silicon |
JP6351520B2 (ja) | 2014-08-07 | 2018-07-04 | 株式会社東芝 | 半導体発光素子 |
JP6413460B2 (ja) | 2014-08-08 | 2018-10-31 | 日亜化学工業株式会社 | 発光装置及び発光装置の製造方法 |
KR20160027875A (ko) | 2014-08-28 | 2016-03-10 | 서울바이오시스 주식회사 | 발광소자 |
KR20160032328A (ko) * | 2014-09-15 | 2016-03-24 | 삼성전자주식회사 | 반도체 발광소자 패키지 |
US9799719B2 (en) | 2014-09-25 | 2017-10-24 | X-Celeprint Limited | Active-matrix touchscreen |
KR101888608B1 (ko) | 2014-10-17 | 2018-09-20 | 엘지이노텍 주식회사 | 발광 소자 패키지 및 조명 장치 |
US9847051B2 (en) * | 2014-11-04 | 2017-12-19 | Apple Inc. | Organic light-emitting diode display with minimized subpixel crosstalk |
US9698134B2 (en) | 2014-11-27 | 2017-07-04 | Sct Technology, Ltd. | Method for manufacturing a light emitted diode display |
US20160163940A1 (en) | 2014-12-05 | 2016-06-09 | Industrial Technology Research Institute | Package structure for light emitting device |
KR102402260B1 (ko) | 2015-01-08 | 2022-05-27 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광 소자 패키지 |
KR102434778B1 (ko) | 2015-03-26 | 2022-08-23 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광 소자 패키지 |
KR102038443B1 (ko) | 2015-03-26 | 2019-10-30 | 엘지이노텍 주식회사 | 발광 소자 및 발광 소자 패키지 |
KR102239627B1 (ko) * | 2015-03-26 | 2021-04-12 | 엘지이노텍 주식회사 | 발광 소자 패키지 |
KR101771461B1 (ko) | 2015-04-24 | 2017-08-25 | 엘지전자 주식회사 | 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법 |
JP6637674B2 (ja) | 2015-04-30 | 2020-01-29 | 信越化学工業株式会社 | プリント配線板、プリント配線板の製造方法、及び半導体装置 |
CN104952995B (zh) | 2015-05-05 | 2017-08-25 | 湘能华磊光电股份有限公司 | 一种iii族半导体发光器件的倒装结构 |
US20160336482A1 (en) | 2015-05-12 | 2016-11-17 | Epistar Corporation | Light-emitting device |
DE102015108545A1 (de) | 2015-05-29 | 2016-12-01 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
DE102015108532A1 (de) | 2015-05-29 | 2016-12-01 | Osram Opto Semiconductors Gmbh | Anzeigevorrichtung mit einer Mehrzahl getrennt voneinander betreibbarer Bildpunkte |
JP2016225221A (ja) | 2015-06-02 | 2016-12-28 | コニカミノルタ株式会社 | 電界発光素子 |
KR102410524B1 (ko) * | 2015-07-03 | 2022-06-20 | 삼성디스플레이 주식회사 | 표시 장치 |
TWI577042B (zh) | 2015-07-15 | 2017-04-01 | 南臺科技大學 | 發光二極體晶片及數據發射及接收裝置 |
WO2017030396A1 (ko) | 2015-08-18 | 2017-02-23 | 엘지이노텍(주) | 발광 소자, 이 소자를 포함하는 발광 소자 패키지 및 이 패키지를 포함하는 발광 장치 |
KR102415331B1 (ko) | 2015-08-26 | 2022-06-30 | 삼성전자주식회사 | 발광 소자 패키지, 및 이를 포함하는 장치 |
KR102443035B1 (ko) | 2015-09-02 | 2022-09-16 | 삼성전자주식회사 | Led 구동 장치 및 그를 포함하는 조명 장치 |
US10032757B2 (en) | 2015-09-04 | 2018-07-24 | Hong Kong Beida Jade Bird Display Limited | Projection display system |
US10304811B2 (en) | 2015-09-04 | 2019-05-28 | Hong Kong Beida Jade Bird Display Limited | Light-emitting diode display panel with micro lens array |
KR102460072B1 (ko) | 2015-09-10 | 2022-10-31 | 삼성전자주식회사 | 반도체 발광 소자 |
KR102406606B1 (ko) | 2015-10-08 | 2022-06-09 | 삼성디스플레이 주식회사 | 유기 발광 소자, 이를 포함하는 유기 발광 표시 장치, 및 이의 제조 방법 |
KR101739851B1 (ko) * | 2015-10-30 | 2017-05-25 | 주식회사 썬다이오드코리아 | 파장변환구조체를 포함하는 발광 소자 |
US10304813B2 (en) | 2015-11-05 | 2019-05-28 | Innolux Corporation | Display device having a plurality of bank structures |
KR102546307B1 (ko) | 2015-12-02 | 2023-06-21 | 삼성전자주식회사 | 발광 소자 및 이를 포함하는 표시 장치 |
KR20170082187A (ko) | 2016-01-05 | 2017-07-14 | 삼성전자주식회사 | 백색 발광장치 및 디스플레이 장치 |
TWI581455B (zh) | 2016-01-29 | 2017-05-01 | 友達光電股份有限公司 | 發光裝置及發光裝置之製造方法 |
KR102524805B1 (ko) | 2016-02-12 | 2023-04-25 | 삼성전자주식회사 | 광원 모듈, 디스플레이 패널 및 이를 구비한 디스플레이 장치 |
WO2017145026A1 (en) | 2016-02-23 | 2017-08-31 | Silanna UV Technologies Pte Ltd | Resonant optical cavity light emitting device |
KR102328852B1 (ko) | 2016-02-24 | 2021-11-22 | 삼성디스플레이 주식회사 | 유기발광소자 |
WO2017146477A1 (ko) | 2016-02-26 | 2017-08-31 | 서울반도체주식회사 | 디스플레이 장치 및 그의 제조 방법 |
DE102016104280A1 (de) | 2016-03-09 | 2017-09-14 | Osram Opto Semiconductors Gmbh | Bauelement und Verfahren zur Herstellung eines Bauelements |
KR20170108321A (ko) | 2016-03-17 | 2017-09-27 | 주식회사 루멘스 | 발광 다이오드 |
KR102517336B1 (ko) | 2016-03-29 | 2023-04-04 | 삼성전자주식회사 | 디스플레이 패널 및 이를 구비한 멀티비전 장치 |
CN205944139U (zh) | 2016-03-30 | 2017-02-08 | 首尔伟傲世有限公司 | 紫外线发光二极管封装件以及包含此的发光二极管模块 |
JP6683003B2 (ja) | 2016-05-11 | 2020-04-15 | 日亜化学工業株式会社 | 半導体素子、半導体装置及び半導体素子の製造方法 |
KR20170129983A (ko) | 2016-05-17 | 2017-11-28 | 삼성전자주식회사 | 발광소자 패키지, 이를 이용한 디스플레이 장치 및 그 제조방법 |
US10388691B2 (en) | 2016-05-18 | 2019-08-20 | Globalfoundries Inc. | Light emitting diodes (LEDs) with stacked multi-color pixels for displays |
CN107437551B (zh) * | 2016-05-25 | 2020-03-24 | 群创光电股份有限公司 | 显示装置及其制造方法 |
EP3297044A1 (en) | 2016-09-19 | 2018-03-21 | Nick Shepherd | Improved led emitter, led emitter array and method for manufacturing the same |
CN106449659B (zh) | 2016-11-11 | 2019-06-07 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法、显示器 |
KR102642304B1 (ko) | 2016-11-28 | 2024-02-28 | 삼성전자주식회사 | 광전자 소자 및 전자 장치 |
US11287563B2 (en) | 2016-12-01 | 2022-03-29 | Ostendo Technologies, Inc. | Polarized light emission from micro-pixel displays and methods of fabrication thereof |
US10400958B2 (en) | 2016-12-30 | 2019-09-03 | Lumileds Llc | Addressable color changeable LED structure |
CN106898601A (zh) | 2017-02-15 | 2017-06-27 | 佛山市国星光电股份有限公司 | 三角形组合的led线路板、三角形led器件及显示屏 |
WO2018156876A1 (en) * | 2017-02-24 | 2018-08-30 | Kim, Jeehwan | Methods and apparatus for vertically stacked multicolor light-emitting diode (led) display |
TWI699496B (zh) | 2017-03-31 | 2020-07-21 | 億光電子工業股份有限公司 | 發光裝置和照明模組 |
TWI613806B (zh) | 2017-05-16 | 2018-02-01 | 錼創科技股份有限公司 | 微型發光二極體裝置及顯示面板 |
KR20190001050A (ko) | 2017-06-26 | 2019-01-04 | 주식회사 루멘스 | 칩 적층 구조를 갖는 led 픽셀 소자 |
TWI672808B (zh) | 2017-07-07 | 2019-09-21 | 鴻海精密工業股份有限公司 | 微型led顯示面板及其製備方法 |
KR102476136B1 (ko) | 2017-09-05 | 2022-12-09 | 삼성전자주식회사 | Led를 이용한 디스플레이 장치 |
US11282981B2 (en) * | 2017-11-27 | 2022-03-22 | Seoul Viosys Co., Ltd. | Passivation covered light emitting unit stack |
KR102509639B1 (ko) | 2017-12-12 | 2023-03-15 | 삼성전자주식회사 | 발광소자 패키지 제조방법 |
US10586829B2 (en) | 2018-01-23 | 2020-03-10 | Light Share, LLC | Full-color monolithic micro-LED pixels |
US11508876B2 (en) | 2018-12-31 | 2022-11-22 | Seoul Viosys Co., Ltd. | Light emitting device package and display device having the same |
-
2018
- 2018-11-22 US US16/198,784 patent/US11282981B2/en active Active
- 2018-11-27 EP EP18882087.2A patent/EP3718137A4/en active Pending
- 2018-11-27 CN CN201880040525.4A patent/CN110785841A/zh active Pending
- 2018-11-27 BR BR112020010682-8A patent/BR112020010682A2/pt active Search and Examination
- 2018-11-27 JP JP2020527964A patent/JP7199435B2/ja active Active
- 2018-11-27 WO PCT/KR2018/014671 patent/WO2019103566A1/en unknown
- 2018-11-27 KR KR1020207013705A patent/KR102665335B1/ko active IP Right Grant
-
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- 2021-09-14 US US17/475,273 patent/US20220005971A1/en active Pending
- 2021-11-30 US US17/539,050 patent/US20220085239A1/en active Pending
-
2022
- 2022-06-22 US US17/847,122 patent/US20220393063A1/en active Pending
- 2022-12-20 JP JP2022203589A patent/JP7413494B2/ja active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005019874A (ja) | 2003-06-27 | 2005-01-20 | Matsushita Electric Ind Co Ltd | Led、ledチップ、ledモジュール、および照明装置 |
JP2006319099A (ja) | 2005-05-12 | 2006-11-24 | Oki Data Corp | 半導体装置、プリントヘッド及び画像形成装置 |
US20090078955A1 (en) | 2007-09-26 | 2009-03-26 | Iii-N Technlogy, Inc | Micro-Emitter Array Based Full-Color Micro-Display |
JP2011151346A (ja) | 2009-12-24 | 2011-08-04 | Stanley Electric Co Ltd | フェイスアップ型光半導体装置 |
JP2017513234A (ja) | 2014-04-18 | 2017-05-25 | ポステク アカデミー−インダストリー ファウンデーション | 窒素窒化物半導体発光素子及びその製造方法 |
JP2017011202A (ja) | 2015-06-25 | 2017-01-12 | 京セラ株式会社 | 発光装置 |
US20170288093A1 (en) | 2016-04-04 | 2017-10-05 | Samsung Electronics Co., Ltd. | Led light source module and display device |
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JP2021504944A (ja) | 2021-02-15 |
JP2023027328A (ja) | 2023-03-01 |
KR20200085771A (ko) | 2020-07-15 |
CN110785841A (zh) | 2020-02-11 |
US20220005971A1 (en) | 2022-01-06 |
US20220085239A1 (en) | 2022-03-17 |
WO2019103566A1 (en) | 2019-05-31 |
JP7413494B2 (ja) | 2024-01-15 |
BR112020010682A2 (pt) | 2020-11-10 |
US20190165207A1 (en) | 2019-05-30 |
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US11282981B2 (en) | 2022-03-22 |
US20220393063A1 (en) | 2022-12-08 |
EP3718137A4 (en) | 2021-11-03 |
KR102665335B1 (ko) | 2024-06-12 |
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