JP2006059992A - 電子部品内蔵基板の製造方法 - Google Patents
電子部品内蔵基板の製造方法 Download PDFInfo
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- H—ELECTRICITY
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- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
- H05K1/185—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit
- H05K1/186—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit manufactured by mounting on or connecting to patterned circuits before or during embedding
- H05K1/187—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit manufactured by mounting on or connecting to patterned circuits before or during embedding the patterned circuits being prefabricated circuits, which are not yet attached to a permanent insulating substrate, e.g. on a temporary carrier
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- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5389—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates the chips being integrally enclosed by the interconnect and support structures
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- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
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- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
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- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
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- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
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- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16235—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a via metallisation of the item
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- H01L2224/818—Bonding techniques
- H01L2224/81801—Soldering or alloying
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- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
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- H01L2924/1901—Structure
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- H01L2924/19041—Component type being a capacitor
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- H05K2203/01—Tools for processing; Objects used during processing
- H05K2203/0147—Carriers and holders
- H05K2203/0152—Temporary metallic carrier, e.g. for transferring material
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- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/03—Metal processing
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- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
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- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
Abstract
【解決手段】 ビルドアップ層18,19内に電子部品15が内蔵された電子部品内蔵基板の製造方法であって、導電性材料よりなる支持体10に電気的に接続するよう内蔵電子部品15を配設する工程と、内蔵電子部品15が配設された支持体10上にこの内蔵電子部品15を内蔵するようビルドアップ層18,19を形成する工程と、支持体10を整形することにより内蔵電子部品15と接続した上部配線22を形成する工程とを有する。
【選択図】 図11
Description
ビルドアップ層内に電子部品が内蔵された電子部品内蔵基板の製造方法であって、
導電性材料よりなる支持体に、該支持体と電気的に接続するよう前記電子部品を配設する工程と、
前記電子部品が配設された支持体上に、該電子部品を内蔵するようビルドアップ層を形成する工程と、
前記導電性材料よりなる支持体を整形することにより、前記電子部品と接続した配線を形成する工程とを有することを特徴とするものである。
ビルドアップ層内に電子部品が内蔵された電子部品内蔵基板の製造方法であって、
導電性材料よりなる支持体上に、ビルドアップ層を前記電子部品の厚さに相当する層数積層する第1のビルドアップ層積層工程と、
積層された前記ビルドアップ層に、前記電子部品を内蔵するためのキャビティを形成するキャビティ形成工程と、
前記キャビティに前記電子部品を収納する収納工程と、
前記キャビティが形成されたビルドアップ層及び前記電子部品上に、更にビルドアップ層を形成する第2のビルドアップ層積層工程と、
前記導電性材料よりなる支持体を整形することにより、前記電子部品と接続した配線を形成する工程とを有することを特徴とするものである。
請求項1または2記載の電子部品内蔵基板の製造方法において、
前記電子部品と接続した配線を形成する工程では、エッチング法を用いて前記支持体を整形することを特徴とするものである。
請求項2または3記載の電子部品内蔵基板の製造方法において、
前記第1及び第2のビルドアップ層積層工程では、セミアディティブ法を用いることを特徴とするものである。
14 バリアメタル層
15 内蔵電子部品
16 バンプ
17 アンダーフィルレジン
18,19,28 ビルドアップ層
18a,19a,28a 絶縁層
18b,19b,28b ビア
18c,19c,28c 配線層
20 ソルダーレジスト
22 上部配線
25 半導体素子
26 はんだバンプ
27 はんだボール
29 ビルドアップ積層体
30 キャビティ
Claims (4)
- ビルドアップ層内に電子部品が内蔵された電子部品内蔵基板の製造方法であって、
導電性材料よりなる支持体に、該支持体と電気的に接続するよう前記電子部品を配設する工程と、
前記電子部品が配設された支持体上に、該電子部品を内蔵するようビルドアップ層を形成する工程と、
前記導電性材料よりなる支持体を整形することにより、前記電子部品と接続した配線を形成する工程と
を有することを特徴とする電子部品内蔵基板の製造方法。 - ビルドアップ層内に電子部品が内蔵された電子部品内蔵基板の製造方法であって、
導電性材料よりなる支持体上に、ビルドアップ層を前記電子部品の厚さに相当する層数積層する第1のビルドアップ層積層工程と、
積層された前記ビルドアップ層に、前記電子部品を内蔵するためのキャビティを形成するキャビティ形成工程と、
前記キャビティに前記電子部品を収納する収納工程と、
前記キャビティが形成されたビルドアップ層及び前記電子部品上に、更にビルドアップ層を形成する第2のビルドアップ層積層工程と、
前記導電性材料よりなる支持体を整形することにより、前記電子部品と接続した配線を形成する工程と
を有することを特徴とする電子部品内蔵基板の製造方法。 - 請求項1または2記載の電子部品内蔵基板の製造方法において、
前記電子部品と接続した配線を形成する工程では、エッチング法を用いて前記支持体を整形することを特徴とする電子部品内蔵基板の製造方法。 - 請求項2または3記載の電子部品内蔵基板の製造方法において、
前記第1及び第2のビルドアップ層積層工程では、セミアディティブ法を用いることを特徴とする電子部品内蔵基板の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004239782A JP2006059992A (ja) | 2004-08-19 | 2004-08-19 | 電子部品内蔵基板の製造方法 |
TW094127520A TW200610108A (en) | 2004-08-19 | 2005-08-12 | A manufacturing method of an electronic part built-in substrate |
US11/203,700 US7214565B2 (en) | 2004-08-19 | 2005-08-15 | Manufacturing method of an electronic part built-in substrate |
KR1020050075817A KR20060053116A (ko) | 2004-08-19 | 2005-08-18 | 전자 부품 내장형 기판의 제조 방법 |
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JP2004239782A JP2006059992A (ja) | 2004-08-19 | 2004-08-19 | 電子部品内蔵基板の製造方法 |
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JP2006059992A true JP2006059992A (ja) | 2006-03-02 |
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JP2004239782A Pending JP2006059992A (ja) | 2004-08-19 | 2004-08-19 | 電子部品内蔵基板の製造方法 |
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US (1) | US7214565B2 (ja) |
JP (1) | JP2006059992A (ja) |
KR (1) | KR20060053116A (ja) |
TW (1) | TW200610108A (ja) |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007318090A (ja) * | 2006-04-25 | 2007-12-06 | Ngk Spark Plug Co Ltd | 配線基板の製造方法 |
JP2010004028A (ja) * | 2008-05-23 | 2010-01-07 | Shinko Electric Ind Co Ltd | 配線基板及びその製造方法、及び半導体装置 |
JP2012216601A (ja) * | 2011-03-31 | 2012-11-08 | Fujitsu Ltd | 電子装置の製造方法及び電子装置 |
JP2015531172A (ja) * | 2012-09-29 | 2015-10-29 | インテル コーポレイション | パッケージ・オン・パッケージアーキテクチャ用の埋込構造 |
JP2017076790A (ja) * | 2015-10-13 | 2017-04-20 | サムソン エレクトロ−メカニックス カンパニーリミテッド. | ファンアウト半導体パッケージ及びその製造方法 |
KR20170043440A (ko) * | 2015-10-13 | 2017-04-21 | 삼성전기주식회사 | 팬-아웃 반도체 패키지 및 그 제조방법 |
JP2017130649A (ja) * | 2016-01-22 | 2017-07-27 | サムソン エレクトロ−メカニックス カンパニーリミテッド. | 電子部品パッケージ及びその製造方法 |
JP2017175112A (ja) * | 2016-03-25 | 2017-09-28 | サムソン エレクトロ−メカニックス カンパニーリミテッド. | ファン−アウト半導体パッケージ |
JP2017228762A (ja) * | 2016-06-21 | 2017-12-28 | サムソン エレクトロ−メカニックス カンパニーリミテッド. | ファン−アウト半導体パッケージ |
JP2018078274A (ja) * | 2016-11-10 | 2018-05-17 | サムソン エレクトロ−メカニックス カンパニーリミテッド. | イメージセンサー装置及びそれを含むイメージセンサーモジュール |
KR20180090666A (ko) * | 2017-02-03 | 2018-08-13 | 삼성전기주식회사 | 팬-아웃 반도체 패키지 |
US10090238B2 (en) | 2016-03-07 | 2018-10-02 | Ibiden Co., Ltd. | Wiring substrate and method for manufacturing the same |
JP2019054226A (ja) * | 2017-09-15 | 2019-04-04 | サムソン エレクトロ−メカニックス カンパニーリミテッド. | ファン−アウト半導体パッケージ |
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Also Published As
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US20060040463A1 (en) | 2006-02-23 |
KR20060053116A (ko) | 2006-05-19 |
TW200610108A (en) | 2006-03-16 |
US7214565B2 (en) | 2007-05-08 |
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