JP7137045B2 - リソ・フリーズ・リソ・エッチプロセスを用いる伸長コンタクト - Google Patents
リソ・フリーズ・リソ・エッチプロセスを用いる伸長コンタクト Download PDFInfo
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- JP7137045B2 JP7137045B2 JP2020210909A JP2020210909A JP7137045B2 JP 7137045 B2 JP7137045 B2 JP 7137045B2 JP 2020210909 A JP2020210909 A JP 2020210909A JP 2020210909 A JP2020210909 A JP 2020210909A JP 7137045 B2 JP7137045 B2 JP 7137045B2
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- 238000000034 method Methods 0.000 title claims description 105
- 229910052751 metal Inorganic materials 0.000 claims description 73
- 239000002184 metal Substances 0.000 claims description 73
- 229920002120 photoresistant polymer Polymers 0.000 claims description 40
- 239000000463 material Substances 0.000 claims description 29
- 230000009977 dual effect Effects 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 description 33
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 15
- 239000000758 substrate Substances 0.000 description 11
- 230000018109 developmental process Effects 0.000 description 8
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 4
- 230000008014 freezing Effects 0.000 description 4
- 238000007710 freezing Methods 0.000 description 4
- 238000007654 immersion Methods 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- 229910021332 silicide Inorganic materials 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000005360 phosphosilicate glass Substances 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
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Description
Masafumi Hori, et al., "Sub-40nm Half-Pitch Double Patterning with Resist Freezing Process", Advances in Resist Materials and Processing Technology XXV, Proc. OF SPIE Vol. 6923, 69230H, 2008
Claims (8)
- 集積回路を形成する方法であって、
アクティブ領域とMOSトランジスタゲートとの上にプリメタル誘電体(PMD)層を形成することと、
前記PMD層の上にコンタクトエッチマスクを形成することであって、
前記PMD層の上に第1のフォトレジスト層を形成することと、
第1のコンタクトサブパターンを用いて前記第1のフォトレジスト層に対して第1の露光動作を行うことと、
前記第1のフォトレジスト層を現像することと、
前記コンタクトエッチマスクの第1のコンタクトエッチサブマスクを形成するために前記第1のフォトレジスト層に対してフリーズプロセスを行うことと、
前記PMD層の上に第2のフォトレジスト層を形成することと、
第2のコンタクトサブパターンを用いて前記第2のフォトレジスト層に対して第2の露光動作を行うことと、
前記コンタクトエッチマスクの第2のコンタクトエッチサブマスクを形成するために前記第2のフォトレジスト層を現像することであって、前記コンタクトエッチマスクの組み合わされる第1のコンタクトエッチサブマスクと第2のコンタクトエッチサブマスクとによってコンタクト領域が露光されるようにする、前記第2のフォトレジスト層を現像することと、
を含むプロセスによって、前記コンタクトエッチマスクを形成することと、
前記コンタクトエッチマスクによって画定される前記コンタクト領域において前記PMD層に複数のコンタクトホールをエッチングすることと、
複数のコンタクトを形成するために前記複数のコンタクトホールを金属で充填することであって、前記複数のコンタクトが、
前記アクティブ領域と前記MOSトランジスタゲートとから選択される2つの領域に接続するデュアルノード伸長コンタクトと、
前記アクティブ領域と前記MOSトランジスタゲートから選択される3つ又はそれ以上の領域に接続するマルチプルノード伸長コンタクトと、
を含む、前記複数のコンタクトホールを金属で充填することと、
前記PMD層の上方に金属内誘電体(IMD)層を形成することと、
前記IMD層に複数の相互接続トレンチをエッチングすることと、
複数の第1レベル相互接続を形成するために前記複数の相互接続トレンチを金属で充填することであって、前記デュアルノード伸長コンタクトの各々が前記複数の第1レベル相互接続の少なくとも1つに直接接続されるようにする、前記複数の相互接続トレンチを金属で充填することと、
を含み、
前記コンタクト領域の対向する縁部が前記第1のコンタクトエッチサブマスクと前記第2のコンタクトエッチサブマスクとにより画定される 、方法。 - 請求項1に記載の方法であって、
前記コンタクトエッチマスクを形成することの前に前記PMD層の上にコンタクトハードマスク層を形成することと、
コンタクトハードマスクホールを形成するために前記コンタクト領域における前記コンタクトハードマスク層から材料を除去するように、前記コンタクトエッチマスクを形成することの後であって前記PMD層に複数のコンタクトホールをエッチングすることの前に、前記集積回路に対してコンタクトハードマスクエッチプロセスを行うことであって、前記PMD層に複数のコンタクトホールをエッチングすることが前記コンタクトハードマスク層をテンプレートとして用いて行われるようにする、前記コンタクトハードマスクエッチプロセスを行うことと、
を更に含む、方法。 - 請求項1に記載の方法であって、
前記複数のコンタクトホールを金属で充填することが、
前記複数のコンタクトホールにライナ金属を形成することと、
前記複数のコンタクトホールに充填金属を形成することと、
を含む、方法。 - 請求項1に記載の方法であって、
前記複数の相互接続トレンチを金属で充填することが、
前記複数の相互接続トレンチにトレンチライナ金属を形成することと、
前記複数の相互接続トレンチにトレンチ充填金属を形成することと、
を含む、方法。 - 集積回路を形成する方法であって、
アクティブ領域とMOSトランジスタゲートとの上にプリメタル誘電体(PMD)層を形成することと、
前記PMD層の上にコンタクトエッチマスクを形成することであって、
前記PMD層の上に前記コンタクトエッチマスクの第1のサブマスクを形成するために第1のフォトレジスト層を堆積して露光して現像することと、
前記コンタクトエッチマスクの第1のサブマスクに対してフリーズプロセスを行うことと、
前記PMD層の上に前記コンタクトエッチマスクの第2のサブマスクを形成するために第2のフォトレジスト層を堆積して露光して現像することであって、前記コンタクトエッチマスクの組み合わされる第1のサブマスクと第2のサブマスクとによってコンタクト領域が露光される、前記第2のフォトレジスト層を堆積して露光して現像することと、
を含むプロセスによって、前記コンタクトエッチマスクを形成することと、
前記コンタクトエッチマスクによって画定される前記コンタクト領域における前記PMD層において複数のコンタクトホールをエッチングすることと、
複数のコンタクトを形成するために前記複数のコンタクトホールをコンタクト金属で充填することであって、前記複数のコンタクトが、
前記アクティブ領域と前記MOSトランジスタゲートとから選択される2つの領域に接続するデュアルノード伸長コンタクトと、
前記アクティブ領域と前記MOSトランジスタゲートとから選択される3つ又はそれ以上の領域に接続するマルチプルノード伸長コンタクトと、
を含む、前記複数のコンタクトホールをコンタクト金属で充填することと、
前記PMD層の上方に金属内誘電体(IMD)層を形成することと、
前記IMD層において複数の相互接続トレンチをエッチングすることと、
複数の第1レベル相互接続を形成するために前記複数の相互接続トレンチを相互接続金属で充填することであって、前記デュアルノード伸長コンタクトの各々が前記複数の第1レベル相互接続の少なくとも1つに直接的に接続されるようにする、前記複数の相互接続トレンチを相互接続金属で充填することと、
を含み、
前記コンタクト領域の対向する縁部が前記第1のサブマスクと前記第2のサブマスクとにより画定される、方法。 - 請求項5に記載の方法であって、
前記コンタクトエッチマスクを形成することの前に前記PMD層の上にコンタクトハードマスク層を形成することと、
コンタクトハードマスクホールを形成するために前記コンタクト領域における前記コンタクトハードマスク層から材料を除去するように、前記コンタクトエッチマスクを形成することの後であって前記PMD層において複数のコンタクトホールをエッチングすることの前に、前記集積回路に対してコンタクトハードマスクエッチプロセスを行うことであって、前記PMD層に複数のコンタクトホールをエッチングすることが前記コンタクトハードマスク層をテンプレートとして用いることで成されるようにする、前記コンタクトハードマスクエッチプロセスを行うことと、
を更に含む、方法。 - 請求項6に記載の方法であって、
前記複数のコンタクトホールをコンタクト金属で充填することが、
前記複数のコンタクトホールにコンタクトライナ金属を形成することと、
前記複数のコンタクトホールにコンタクト充填金属を形成することと、
を含む、方法。 - 請求項7に記載の方法であって、
前記複数の相互接続トレンチを相互接続金属で充填することが、
前記複数の相互接続トレンチにトレンチライナ金属を形成することと、
前記複数の相互接続トレンチにトレンチ充填金属を形成することと、
を含む、方法。
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WO2015095394A1 (en) | 2015-06-25 |
JP2021061419A (ja) | 2021-04-15 |
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CN105830211A (zh) | 2016-08-03 |
US9620419B2 (en) | 2017-04-11 |
US20170178966A1 (en) | 2017-06-22 |
JP2017500744A (ja) | 2017-01-05 |
EP3084823A1 (en) | 2016-10-26 |
JP6919131B2 (ja) | 2021-08-18 |
US9305848B2 (en) | 2016-04-05 |
CN114093812A (zh) | 2022-02-25 |
US10043714B2 (en) | 2018-08-07 |
US20160190016A1 (en) | 2016-06-30 |
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