JP7102114B2 - 光電変換素子、撮像素子および撮像装置 - Google Patents

光電変換素子、撮像素子および撮像装置 Download PDF

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JP7102114B2
JP7102114B2 JP2017177880A JP2017177880A JP7102114B2 JP 7102114 B2 JP7102114 B2 JP 7102114B2 JP 2017177880 A JP2017177880 A JP 2017177880A JP 2017177880 A JP2017177880 A JP 2017177880A JP 7102114 B2 JP7102114 B2 JP 7102114B2
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photoelectric conversion
substituted
organic compound
conversion element
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JP2018085499A5 (https=
JP2018085499A (ja
Inventor
悟 塩原
直樹 山田
哲生 高橋
淳 鎌谷
洋祐 西出
広和 宮下
智奈 山口
洋伸 岩脇
博揮 大類
真澄 板橋
典史 梶本
健太郎 伊藤
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Canon Inc
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Canon Inc
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Priority to PCT/JP2017/039722 priority Critical patent/WO2018088325A1/ja
Priority to CN201780069863.6A priority patent/CN109937489B/zh
Priority to EP17870234.6A priority patent/EP3540804B1/en
Publication of JP2018085499A publication Critical patent/JP2018085499A/ja
Priority to US16/407,012 priority patent/US12336311B2/en
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    • H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
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    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
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    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
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    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H10K85/636—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising heteroaromatic hydrocarbons as substituents on the nitrogen atom
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    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/30—Highest occupied molecular orbital [HOMO], lowest unoccupied molecular orbital [LUMO] or Fermi energy values
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    • H10K85/342—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising iridium
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    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/622—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing four rings, e.g. pyrene
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    • H10K85/623—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing five rings, e.g. pentacene
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    • H10K85/633—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising polycyclic condensed aromatic hydrocarbons as substituents on the nitrogen atom
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    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Inorganic Chemistry (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Electroluminescent Light Sources (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
JP2017177880A 2016-11-11 2017-09-15 光電変換素子、撮像素子および撮像装置 Active JP7102114B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
PCT/JP2017/039722 WO2018088325A1 (ja) 2016-11-11 2017-11-02 光電変換素子、撮像素子および撮像装置
CN201780069863.6A CN109937489B (zh) 2016-11-11 2017-11-02 光电转换元件、摄像元件和摄像设备
EP17870234.6A EP3540804B1 (en) 2016-11-11 2017-11-02 Photoelectric conversion element, imaging element and imaging device
US16/407,012 US12336311B2 (en) 2016-11-11 2019-05-08 Photoelectric conversion element, image pickup element, and image pickup apparatus

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JP2016220717 2016-11-11
JP2016220717 2016-11-11

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JP2018085499A5 JP2018085499A5 (https=) 2020-09-03
JP7102114B2 true JP7102114B2 (ja) 2022-07-19

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JP7224813B2 (ja) * 2018-08-31 2023-02-20 キヤノン株式会社 有機化合物、有機発光素子、表示装置、撮像装置、電子機器、照明装置及び移動体
CN113557614A (zh) 2019-03-28 2021-10-26 索尼集团公司 固态摄像元件、固态摄像元件的制造方法、光电转换元件、摄像装置和电子设备
KR20210146289A (ko) * 2019-03-28 2021-12-03 소니그룹주식회사 고체 촬상 소자 및 고체 촬상 소자의 제조 방법 및 고체 촬상 장치
JP7541820B2 (ja) * 2019-11-01 2024-08-29 キヤノン株式会社 有機化合物及び有機発光素子
CN112174839A (zh) * 2020-11-05 2021-01-05 四川大学华西医院 一种脂滴特异性标记的荧光探针及其合成方法和应用
CN118435719A (zh) 2022-01-21 2024-08-02 日铁化学材料株式会社 摄像用的光电转换元件用材料以及光电转换元件
CN116803994A (zh) * 2023-06-26 2023-09-26 厦门大学 化合物、其立体异构体或光学异构体及制备方法、给体材料、太阳能电池、用电装置及应用

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EP3540804B1 (en) 2025-01-08
CN109937489B (zh) 2024-03-08
EP3540804A4 (en) 2020-09-16
JP2018085499A (ja) 2018-05-31
EP3540804A1 (en) 2019-09-18
US12336311B2 (en) 2025-06-17
CN109937489A (zh) 2019-06-25
US20190267411A1 (en) 2019-08-29

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