WO2008146602A1 - 放射線検出器、放射線検出器の製造方法及び支持基板の製造方法 - Google Patents

放射線検出器、放射線検出器の製造方法及び支持基板の製造方法 Download PDF

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Publication number
WO2008146602A1
WO2008146602A1 PCT/JP2008/058834 JP2008058834W WO2008146602A1 WO 2008146602 A1 WO2008146602 A1 WO 2008146602A1 JP 2008058834 W JP2008058834 W JP 2008058834W WO 2008146602 A1 WO2008146602 A1 WO 2008146602A1
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WIPO (PCT)
Prior art keywords
radiation detector
supporting substrate
organic semiconductor
transparent electrodes
radiation
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PCT/JP2008/058834
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English (en)
French (fr)
Inventor
Satoshi Masuda
Tomoo Izumi
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Konica Minolta Holdings, Inc.
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Publication date
Application filed by Konica Minolta Holdings, Inc. filed Critical Konica Minolta Holdings, Inc.
Priority to US12/600,668 priority Critical patent/US20100163737A1/en
Priority to JP2009516244A priority patent/JP4894921B2/ja
Publication of WO2008146602A1 publication Critical patent/WO2008146602A1/ja

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14632—Wafer-level processed structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
    • H01L27/14663—Indirect radiation imagers, e.g. using luminescent members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14687—Wafer level processing
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/30—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming X-rays into image signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/30—Transforming light or analogous information into electric information
    • H04N5/32—Transforming X-rays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/211—Fullerenes, e.g. C60
    • H10K85/215—Fullerenes, e.g. C60 comprising substituents, e.g. PCBM

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nanotechnology (AREA)
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  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Mathematical Physics (AREA)
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  • Crystallography & Structural Chemistry (AREA)
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  • Life Sciences & Earth Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

　支持基板の一方の面に形成された放射線を可視光に変換する蛍光体からなるシンチレータ層と、支持基板の他方の面にマトリックス状に複数形成された透明電極と、透明電極の上に形成された有機半導体材料を含む光電変換層と、有機半導体層の上に形成された上部電極と、を有し、支持基板は、シンチレータ層に放射線が照射されることにより発光する可視光を有機半導体層に集光する集光素子が透明電極と対向する位置にマトリックス状に埋め込まれていることを特徴とする放射線検出器。
PCT/JP2008/058834 2007-05-24 2008-05-14 放射線検出器、放射線検出器の製造方法及び支持基板の製造方法 WO2008146602A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/600,668 US20100163737A1 (en) 2007-05-24 2008-05-14 Radiation detector, method of manufacturing radiation detector, and method of manufacturing supporting substrate
JP2009516244A JP4894921B2 (ja) 2007-05-24 2008-05-14 放射線検出器、放射線検出器の製造方法及び支持基板の製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-137602 2007-05-24
JP2007137602 2007-05-24

Publications (1)

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WO2008146602A1 true WO2008146602A1 (ja) 2008-12-04

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Country Status (3)

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US (1) US20100163737A1 (ja)
JP (1) JP4894921B2 (ja)
WO (1) WO2008146602A1 (ja)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011038912A (ja) * 2009-08-12 2011-02-24 Konica Minolta Medical & Graphic Inc 放射線画像検出装置
JP2011172910A (ja) * 2010-01-29 2011-09-08 Fujifilm Corp 放射線画像撮影装置、放射線画像撮影システム及び放射線画像撮影装置の電力供給方法
JP2011172909A (ja) * 2010-01-29 2011-09-08 Fujifilm Corp 放射線画像撮影装置、放射線画像撮影システム及び放射線画像撮影装置の電力供給方法
JP2011172904A (ja) * 2010-01-29 2011-09-08 Fujifilm Corp 放射線画像撮影装置、放射線画像撮影システム及び放射線画像撮影装置の電力供給方法
JP2011183146A (ja) * 2010-02-15 2011-09-22 Fujifilm Corp 放射線画像撮影装置、放射線画像撮影システム及び放射線画像撮影装置の電力供給方法
JP2011194216A (ja) * 2010-02-23 2011-10-06 Fujifilm Corp 放射線画像撮影装置、放射線画像撮影システム及び放射線画像撮影装置の電力供給方法
WO2011136244A1 (ja) * 2010-04-30 2011-11-03 富士フイルム株式会社 放射線撮像装置
JP2011221000A (ja) * 2010-03-26 2011-11-04 Fujifilm Corp 放射線検出器の管理方法、放射線画像撮影装置及び放射線画像撮影システム
JP2012030049A (ja) * 2010-06-30 2012-02-16 Fujifilm Corp 放射線画像撮影システム及び放射線画像撮影装置の電力供給方法
KR20140045504A (ko) * 2011-06-22 2014-04-16 지멘스 악티엔게젤샤프트 유기 감광성 요소를 이용한 약광 검출
US8798235B2 (en) 2010-01-29 2014-08-05 Fujifilm Corporation Radiographic image capturing apparatus and radiographic image capturing system
US8798236B2 (en) 2010-01-29 2014-08-05 Fujifilm Corporation Radiographic image capturing apparatus and radiographic image capturing system
US8929510B2 (en) 2010-06-30 2015-01-06 Fujifilm Corporation Radiographic image capturing apparatus and radiographic image capturing system
US9168016B2 (en) 2010-01-29 2015-10-27 Fujifilm Corporation Radiographic image capturing apparatus, radiographic image capturing system, and method of supplying electric power to radiographic image capturing apparatus
JP2016524152A (ja) * 2013-06-27 2016-08-12 ヴァリアン メディカル システムズ インコーポレイテッド Ｔｆｔフラットパネルにｃｍｏｓセンサを埋設したｘ線イメージャ

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JP2012141291A (ja) * 2010-12-16 2012-07-26 Fujifilm Corp 放射線撮影装置
JP5604323B2 (ja) * 2011-01-31 2014-10-08 富士フイルム株式会社 放射線画像検出装置
CN102790067B (zh) * 2012-07-26 2014-12-10 北京京东方光电科技有限公司 一种传感器及其制造方法
DE102015006839A1 (de) * 2015-06-02 2016-12-08 Karlsruher Institut für Technologie Optoelektronische Struktur zur Detektion von elektromagnetischer Strahlung
JP7102114B2 (ja) * 2016-11-11 2022-07-19 キヤノン株式会社 光電変換素子、撮像素子および撮像装置
JP7449264B2 (ja) * 2021-08-18 2024-03-13 株式会社東芝 放射線検出器

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Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011038912A (ja) * 2009-08-12 2011-02-24 Konica Minolta Medical & Graphic Inc 放射線画像検出装置
US9168016B2 (en) 2010-01-29 2015-10-27 Fujifilm Corporation Radiographic image capturing apparatus, radiographic image capturing system, and method of supplying electric power to radiographic image capturing apparatus
JP2011172910A (ja) * 2010-01-29 2011-09-08 Fujifilm Corp 放射線画像撮影装置、放射線画像撮影システム及び放射線画像撮影装置の電力供給方法
JP2011172909A (ja) * 2010-01-29 2011-09-08 Fujifilm Corp 放射線画像撮影装置、放射線画像撮影システム及び放射線画像撮影装置の電力供給方法
JP2011172904A (ja) * 2010-01-29 2011-09-08 Fujifilm Corp 放射線画像撮影装置、放射線画像撮影システム及び放射線画像撮影装置の電力供給方法
US10201065B2 (en) 2010-01-29 2019-02-05 Fujifilm Corporation Radiographic image capturing apparatus and radiographic image capturing system
US8798235B2 (en) 2010-01-29 2014-08-05 Fujifilm Corporation Radiographic image capturing apparatus and radiographic image capturing system
US8798236B2 (en) 2010-01-29 2014-08-05 Fujifilm Corporation Radiographic image capturing apparatus and radiographic image capturing system
JP2011183146A (ja) * 2010-02-15 2011-09-22 Fujifilm Corp 放射線画像撮影装置、放射線画像撮影システム及び放射線画像撮影装置の電力供給方法
JP2011194216A (ja) * 2010-02-23 2011-10-06 Fujifilm Corp 放射線画像撮影装置、放射線画像撮影システム及び放射線画像撮影装置の電力供給方法
JP2011221000A (ja) * 2010-03-26 2011-11-04 Fujifilm Corp 放射線検出器の管理方法、放射線画像撮影装置及び放射線画像撮影システム
WO2011136244A1 (ja) * 2010-04-30 2011-11-03 富士フイルム株式会社 放射線撮像装置
JP2012030049A (ja) * 2010-06-30 2012-02-16 Fujifilm Corp 放射線画像撮影システム及び放射線画像撮影装置の電力供給方法
US8929510B2 (en) 2010-06-30 2015-01-06 Fujifilm Corporation Radiographic image capturing apparatus and radiographic image capturing system
KR20140045504A (ko) * 2011-06-22 2014-04-16 지멘스 악티엔게젤샤프트 유기 감광성 요소를 이용한 약광 검출
KR102001694B1 (ko) * 2011-06-22 2019-07-18 지멘스 악티엔게젤샤프트 유기 감광성 요소를 이용한 약광 검출
JP2016524152A (ja) * 2013-06-27 2016-08-12 ヴァリアン メディカル システムズ インコーポレイテッド Ｔｆｔフラットパネルにｃｍｏｓセンサを埋設したｘ線イメージャ

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