WO2008146602A1 - Radiation detector, method for manufacturing radiation detector, and method for producing supporting substrate - Google Patents
Radiation detector, method for manufacturing radiation detector, and method for producing supporting substrate Download PDFInfo
- Publication number
- WO2008146602A1 WO2008146602A1 PCT/JP2008/058834 JP2008058834W WO2008146602A1 WO 2008146602 A1 WO2008146602 A1 WO 2008146602A1 JP 2008058834 W JP2008058834 W JP 2008058834W WO 2008146602 A1 WO2008146602 A1 WO 2008146602A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- radiation detector
- supporting substrate
- organic semiconductor
- transparent electrodes
- radiation
- Prior art date
Links
- 230000005855 radiation Effects 0.000 title abstract 6
- 239000000758 substrate Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title 2
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 abstract 3
- 239000011159 matrix material Substances 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
- H01L27/14663—Indirect radiation imagers, e.g. using luminescent members
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/30—Transforming light or analogous information into electric information
- H04N5/32—Transforming X-rays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/30—Devices controlled by radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/30—Devices controlled by radiation
- H10K39/32—Organic image sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/211—Fullerenes, e.g. C60
- H10K85/215—Fullerenes, e.g. C60 comprising substituents, e.g. PCBM
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/600,668 US20100163737A1 (en) | 2007-05-24 | 2008-05-14 | Radiation detector, method of manufacturing radiation detector, and method of manufacturing supporting substrate |
JP2009516244A JP4894921B2 (en) | 2007-05-24 | 2008-05-14 | Radiation detector, method for manufacturing radiation detector, and method for manufacturing support substrate |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-137602 | 2007-05-24 | ||
JP2007137602 | 2007-05-24 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008146602A1 true WO2008146602A1 (en) | 2008-12-04 |
Family
ID=40074869
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/058834 WO2008146602A1 (en) | 2007-05-24 | 2008-05-14 | Radiation detector, method for manufacturing radiation detector, and method for producing supporting substrate |
Country Status (3)
Country | Link |
---|---|
US (1) | US20100163737A1 (en) |
JP (1) | JP4894921B2 (en) |
WO (1) | WO2008146602A1 (en) |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011038912A (en) * | 2009-08-12 | 2011-02-24 | Konica Minolta Medical & Graphic Inc | Radiation image detector |
JP2011172909A (en) * | 2010-01-29 | 2011-09-08 | Fujifilm Corp | Radiographic image capturing apparatus, radiographic image capturing system, and power supply method for radiographic image capturing apparatus |
JP2011172904A (en) * | 2010-01-29 | 2011-09-08 | Fujifilm Corp | Radiographic image capturing apparatus, radiographic image capturing system, and power supply method for radiographic image capturing apparatus |
JP2011172910A (en) * | 2010-01-29 | 2011-09-08 | Fujifilm Corp | Radiographic image capturing apparatus, radiographic image capturing system, and power supply method for radiographic image capturing apparatus |
JP2011183146A (en) * | 2010-02-15 | 2011-09-22 | Fujifilm Corp | Radiographic image capturing apparatus, radiographic image capturing system, and power supply method for the apparatus |
JP2011194216A (en) * | 2010-02-23 | 2011-10-06 | Fujifilm Corp | Radiographic image capturing apparatus, radiographic image capturing system, and power supply method of radiographic image capturing apparatus |
WO2011136244A1 (en) * | 2010-04-30 | 2011-11-03 | 富士フイルム株式会社 | Radiation imaging device |
JP2011221000A (en) * | 2010-03-26 | 2011-11-04 | Fujifilm Corp | Managing method for radiation detector, radiographic imaging apparatus and radiographic imaging system |
JP2012030049A (en) * | 2010-06-30 | 2012-02-16 | Fujifilm Corp | Radiation image photographing system and power supply method of radiographic apparatus |
KR20140045504A (en) * | 2011-06-22 | 2014-04-16 | 지멘스 악티엔게젤샤프트 | Weak light detection using an organic, photosensitive component |
US8798236B2 (en) | 2010-01-29 | 2014-08-05 | Fujifilm Corporation | Radiographic image capturing apparatus and radiographic image capturing system |
US8798235B2 (en) | 2010-01-29 | 2014-08-05 | Fujifilm Corporation | Radiographic image capturing apparatus and radiographic image capturing system |
US8929510B2 (en) | 2010-06-30 | 2015-01-06 | Fujifilm Corporation | Radiographic image capturing apparatus and radiographic image capturing system |
US9168016B2 (en) | 2010-01-29 | 2015-10-27 | Fujifilm Corporation | Radiographic image capturing apparatus, radiographic image capturing system, and method of supplying electric power to radiographic image capturing apparatus |
JP2016524152A (en) * | 2013-06-27 | 2016-08-12 | ヴァリアン メディカル システムズ インコーポレイテッド | X-ray imager with a CMOS sensor embedded in a TFT flat panel |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI424574B (en) * | 2009-07-28 | 2014-01-21 | Prime View Int Co Ltd | Digital x ray detecting panel and method for manufacturing the same |
DE102010043749A1 (en) * | 2010-11-11 | 2012-05-16 | Siemens Aktiengesellschaft | Hybrid organic photodiode |
JP2012141291A (en) * | 2010-12-16 | 2012-07-26 | Fujifilm Corp | Radiation imaging device |
JP5604323B2 (en) * | 2011-01-31 | 2014-10-08 | 富士フイルム株式会社 | Radiation image detection device |
CN102790067B (en) * | 2012-07-26 | 2014-12-10 | 北京京东方光电科技有限公司 | Sensor and manufacturing method thereof |
DE102015006839A1 (en) * | 2015-06-02 | 2016-12-08 | Karlsruher Institut für Technologie | Optoelectronic structure for the detection of electromagnetic radiation |
JP7102114B2 (en) * | 2016-11-11 | 2022-07-19 | キヤノン株式会社 | Photoelectric conversion element, image sensor and image sensor |
JP7449264B2 (en) * | 2021-08-18 | 2024-03-13 | 株式会社東芝 | radiation detector |
Citations (4)
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JP2004096079A (en) * | 2002-07-11 | 2004-03-25 | Sharp Corp | Photoelectric converter, image reader, and manufacturing method of photoelectric converter |
JP2004340737A (en) * | 2003-05-15 | 2004-12-02 | Toshiba Corp | Radiation detector and its manufacturing method |
JP2005032793A (en) * | 2003-07-08 | 2005-02-03 | Matsushita Electric Ind Co Ltd | Organic photoelectric converter |
JP2006080457A (en) * | 2004-09-13 | 2006-03-23 | Sony Corp | Imaging device and its manufacturing method |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS61196570A (en) * | 1985-02-25 | 1986-08-30 | Hitachi Zosen Corp | Amorphous silicon x-ray sensor |
JPS61196572A (en) * | 1985-02-25 | 1986-08-30 | Hitachi Zosen Corp | Amorphous silicon x-ray sensor |
JPH0745140B2 (en) * | 1988-06-07 | 1995-05-17 | 松下電器産業株式会社 | Lens array manufacturing method |
JP3685446B2 (en) * | 1993-12-27 | 2005-08-17 | キヤノン株式会社 | Photoelectric conversion device |
US5772905A (en) * | 1995-11-15 | 1998-06-30 | Regents Of The University Of Minnesota | Nanoimprint lithography |
US6630675B2 (en) * | 2000-07-26 | 2003-10-07 | Siemens Medical Solutions Usa, Inc. | X-ray scintillator compositions for X-ray imaging applications |
DE10244178A1 (en) * | 2002-09-23 | 2004-04-08 | Siemens Ag | X-ray detector used in computer tomography comprises a luminescent layer for producing electromagnetic radiation, an electrically conducting bottom electrode, a photodetector layer, and an electrically conducting top electrode |
DE10313602B4 (en) * | 2003-03-26 | 2013-05-08 | Siemens Aktiengesellschaft | Apparatus for measuring a radiation dose |
-
2008
- 2008-05-14 JP JP2009516244A patent/JP4894921B2/en not_active Expired - Fee Related
- 2008-05-14 WO PCT/JP2008/058834 patent/WO2008146602A1/en active Application Filing
- 2008-05-14 US US12/600,668 patent/US20100163737A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004096079A (en) * | 2002-07-11 | 2004-03-25 | Sharp Corp | Photoelectric converter, image reader, and manufacturing method of photoelectric converter |
JP2004340737A (en) * | 2003-05-15 | 2004-12-02 | Toshiba Corp | Radiation detector and its manufacturing method |
JP2005032793A (en) * | 2003-07-08 | 2005-02-03 | Matsushita Electric Ind Co Ltd | Organic photoelectric converter |
JP2006080457A (en) * | 2004-09-13 | 2006-03-23 | Sony Corp | Imaging device and its manufacturing method |
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011038912A (en) * | 2009-08-12 | 2011-02-24 | Konica Minolta Medical & Graphic Inc | Radiation image detector |
US9168016B2 (en) | 2010-01-29 | 2015-10-27 | Fujifilm Corporation | Radiographic image capturing apparatus, radiographic image capturing system, and method of supplying electric power to radiographic image capturing apparatus |
JP2011172909A (en) * | 2010-01-29 | 2011-09-08 | Fujifilm Corp | Radiographic image capturing apparatus, radiographic image capturing system, and power supply method for radiographic image capturing apparatus |
JP2011172904A (en) * | 2010-01-29 | 2011-09-08 | Fujifilm Corp | Radiographic image capturing apparatus, radiographic image capturing system, and power supply method for radiographic image capturing apparatus |
JP2011172910A (en) * | 2010-01-29 | 2011-09-08 | Fujifilm Corp | Radiographic image capturing apparatus, radiographic image capturing system, and power supply method for radiographic image capturing apparatus |
US10201065B2 (en) | 2010-01-29 | 2019-02-05 | Fujifilm Corporation | Radiographic image capturing apparatus and radiographic image capturing system |
US8798236B2 (en) | 2010-01-29 | 2014-08-05 | Fujifilm Corporation | Radiographic image capturing apparatus and radiographic image capturing system |
US8798235B2 (en) | 2010-01-29 | 2014-08-05 | Fujifilm Corporation | Radiographic image capturing apparatus and radiographic image capturing system |
JP2011183146A (en) * | 2010-02-15 | 2011-09-22 | Fujifilm Corp | Radiographic image capturing apparatus, radiographic image capturing system, and power supply method for the apparatus |
JP2011194216A (en) * | 2010-02-23 | 2011-10-06 | Fujifilm Corp | Radiographic image capturing apparatus, radiographic image capturing system, and power supply method of radiographic image capturing apparatus |
JP2011221000A (en) * | 2010-03-26 | 2011-11-04 | Fujifilm Corp | Managing method for radiation detector, radiographic imaging apparatus and radiographic imaging system |
WO2011136244A1 (en) * | 2010-04-30 | 2011-11-03 | 富士フイルム株式会社 | Radiation imaging device |
JP2012030049A (en) * | 2010-06-30 | 2012-02-16 | Fujifilm Corp | Radiation image photographing system and power supply method of radiographic apparatus |
US8929510B2 (en) | 2010-06-30 | 2015-01-06 | Fujifilm Corporation | Radiographic image capturing apparatus and radiographic image capturing system |
KR20140045504A (en) * | 2011-06-22 | 2014-04-16 | 지멘스 악티엔게젤샤프트 | Weak light detection using an organic, photosensitive component |
KR102001694B1 (en) * | 2011-06-22 | 2019-07-18 | 지멘스 악티엔게젤샤프트 | Weak light detection using an organic, photosensitive component |
JP2016524152A (en) * | 2013-06-27 | 2016-08-12 | ヴァリアン メディカル システムズ インコーポレイテッド | X-ray imager with a CMOS sensor embedded in a TFT flat panel |
Also Published As
Publication number | Publication date |
---|---|
US20100163737A1 (en) | 2010-07-01 |
JP4894921B2 (en) | 2012-03-14 |
JPWO2008146602A1 (en) | 2010-08-19 |
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