JP7102114B2 - 光電変換素子、撮像素子および撮像装置 - Google Patents
光電変換素子、撮像素子および撮像装置 Download PDFInfo
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- JP7102114B2 JP7102114B2 JP2017177880A JP2017177880A JP7102114B2 JP 7102114 B2 JP7102114 B2 JP 7102114B2 JP 2017177880 A JP2017177880 A JP 2017177880A JP 2017177880 A JP2017177880 A JP 2017177880A JP 7102114 B2 JP7102114 B2 JP 7102114B2
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
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Description
前記光電変換層は第一の有機化合物と第二の有機化合物とを有し、前記第一の有機化合物の酸化電位は、前記第二の有機化合物の酸化電位よりも小さく、下記式(A)であらわされるΔEが、下記式(B)を満たし、
ΔE=第一の有機化合物の酸化電位-第二の有機化合物の還元電位 (A)
ΔE≧1.5 [V] (B)
前記第一の有機化合物が下記一般式[28]で表される化合物であることを特徴とする光電変換素子を提供する。
本実施形態においては、アノードとカソードとの間に有機化合物からなる光電変換層を有する光電変換素子を例に挙げて説明する。
ΔEは下記式(A)にて定義されるエネルギーギャップである。
ΔE=第一の有機化合物の酸化電位-第二の有機化合物の還元電位 (A)
またΔEは、下記式(B)を満たす。
ΔE≧1.5 [V] (B)
本実施形態に係る撮像素子は、複数の画素を有し、画素は、本発明に係る光電変換素子と、光電変換素子に接続されている読み出しトランジスタを有する。
酸化電位などの電気化学特性の評価は、サイクリックボルタンメトリー(CV)によって行うことができる。
本実施例では、ΔE≧1.5Vとなる第一の有機化合物と第二の有機化合物との組み合わせを用いて光電変換素子を作製した。作製した光電変換素子を用いて暗電流を測定した。
B:100pA/cm2以上1000pA/cm2未満
C:1000pA/cm2以上2000pA/cm2未満
D:2nA/cm2以上10nA/cm2未満
E:10nA/cm2以上
A~Cは良好、D,Eは不良とした。
第一の有機化合物及び第二の有機化合物の組み合わせを表4に示す組み合わせとする以外は、実施例1と同様に光電変換素子を作製した。実施例1乃至47の結果を下記表4に示す。
第一の有機化合物と第二の有機化合物の組み合わせを表5の組み合わせとする以外は実施例1と同様に光電変換素子を作製した。表5の化合物の組み合わせは、ΔE<1.5Vの組み合わせである。作製した光電変換素子を実施例1と同様の測定法で暗電流評価を行った。
実施例2に用いた例示化合物1-7について、混合濃度を20重量%から30重量%まで2.5重量%ずつ変化させた際の暗電流の変化を表6に示す。
構成材料および層厚を表7とした以外は、実施例1と同様にして光電変換素子を作製した。第一の有機化合物は、表8に記載の例示化合物、下記の比較化合物(e-1)を用いた。表7では、第一の有機化合物と記載している。それぞれの素子の暗電流を測定し、相対評価を行った。比較化合物(e-1)の構造は下記の通りである。化合物e-1の酸化電位は0.92Vであった。
一般式[28]で記載の部分構造を有する第一の有機化合物について、下記例示化合物の最大吸収ピーク波長とモル吸光係数を示す。最大吸収ピーク波長は、吸収係数が最も大きいピークの波長を指す。測定は、第一の有機化合物がmol/Lのクロロホルム溶液を作製し、分光光度計(日本分光Ubest-550)にて吸収スペクトルを測定した。測定結果より、最大吸収ピーク波長と吸光度を求め。その吸光度からランベールト・ベール則に従ってモル吸光係数を求めた。
封止層にCVD法による窒化珪素層を用いた以外は、実施例1と同様にして光電変換素子を作製した。窒化珪素層は1μmの層厚で形成した。この素子に365nmのLED光を1W/cm2の強度で24h照射して耐久性を評価した。
実施例1において作製した光電変換素子を用いて、暗電流の温度依存性を測定した。図6は、実施例1の光電変換素子のアレニウスプロットである。縦軸は、60℃における暗電流値で規格化した暗電流値である。縦軸の目盛は常用対数である。横軸は絶対温度の逆数である。60℃付近から高温側に向かって傾きの絶対値が大きくなる。この傾きから次式(5)に従い活性化エネルギーを求めた。
実施例55の方法と同様にして、実施例2、6、12、34、比較例6において作製した光電変換素子について活性化エネルギーを求めて、対応するΔEに対してプロットしたのが図7である。ΔEが大きいほど、活性化エネルギーが大きくなる傾向がわかる。図7より、ΔEが1.5V以上となることで、活性化エネルギーが大きいことがわかる。これは、ΔEが1.5V以上である場合、熱励起による電荷発生確率が低下することを指す。ここで、活性化エネルギーと暗電流の評価との関係を表10に示す。表に示す通り、活性化エネルギーが、0.70eV以上の場合、暗電流の評価がC以上となる。
2 正孔ブロック層
3 電子ブロック層
4 アノード電極
5 カソード電極
6 読み出し回路
7 保護層
8 カラーフィルタ
9 マイクロレンズ
Claims (13)
- 下部電極と、上部電極と、前記下部電極と前記上部電極との間に配置されている光電変換層と、を有する光電変換素子であって、
前記光電変換層は第一の有機化合物と第二の有機化合物とを有し、前記第一の有機化合物の酸化電位は、前記第二の有機化合物の酸化電位よりも小さく、下記式(A)であらわされるΔEが、下記式(B)を満たし、
ΔE=第一の有機化合物の酸化電位-第二の有機化合物の還元電位 (A)
ΔE≧1.5 [V] (B)
前記第一の有機化合物が下記一般式[28]で表される化合物であることを特徴とする光電変換素子。
一般式[28]において、R1は水素原子、ハロゲン原子、置換あるいは無置換のアルキル基、置換あるいは無置換のアルコキシ基、置換あるいは無置換のアリール基、置換あるいは無置換の複素環基、置換あるいは無置換のビニル基、置換あるいは無置換のアミノ基、シアノ基を表す。
R391乃至R396は水素原子、ハロゲン原子、置換あるいは無置換のアルキル基、置換あるいは無置換のアルコキシ基、置換あるいは無置換のアリール基、置換あるいは無置換の複素環基、置換あるいは無置換のビニル基、置換あるいは無置換のアミノ基、シアノ基からそれぞれ独立に選ばれる。R391乃至R396のうちの隣接する2つは、互いに結合して環を形成してもよい。ただし、前記R 394 と前記R 395 とは結合して環を形成している。
Z1はハロゲン原子、シアノ基、置換あるいは無置換のヘテロアリール基または以下の一般式[1-1]乃至[1-9]で表される置換基のいずれかを表す。
一般式[1-1]乃至[1-9]において、R521乃至R588は水素原子、ハロゲン原子、置換あるいは無置換のアルキル基、置換あるいは無置換のアルコキシ基、置換あるいは無置換のアリール基、置換あるいは無置換の複素環基、置換あるいは無置換のビニル基、置換あるいは無置換のアミノ基、シアノ基からそれぞれ独立に選ばれる。
- 前記光電変換層における暗電流の活性化エネルギーが、0.70eV以上であることを特徴とする請求項1または2に記載の光電変換素子。
- 前記第一の有機化合物の吸収ピーク波長は、530nm以上であることを特徴とする請求項1乃至3のいずれか一項に記載の光電変換素子。
- 前記第一の有機化合物の酸化電位が、0.65V以上であることを特徴とする請求項1乃至4のいずれか一項に記載の光電変換素子。
- 前記第二の有機化合物がフラーレン誘導体であることを特徴とする請求項1乃至5のいずれか一項に記載の光電変換素子。
- 前記フラーレン誘導体が、フラーレンC60であることを特徴とする請求項6に記載の光電変換素子。
- 前記上部電極の上に封止層を有することを特徴とする請求項1乃至7のいずれか一項に記載の光電変換素子。
- 複数の画素と、前記画素に接続されている信号処理回路と、を有する撮像素子であって、
前記画素は、請求項1乃至8のいずれか一項に記載の光電変換素子と、前記光電変換素子に接続されている読み出し回路とを有することを特徴とする撮像素子。 - 複数のレンズを有する光学部と、前記光学部を透過した光を受光する撮像素子とを有し、
前記撮像素子は、請求項9に記載の撮像素子であることを特徴とする撮像装置。 - 外部からの信号を受信する受信部をさらに有することを特徴とする請求項10に記載の撮像装置。
- 前記信号は、前記撮像装置の撮像範囲、撮像の開始、撮像の終了の少なくともいずれかを制御する信号であることを特徴とする請求項11に記載の撮像装置。
- 取得した画像を外部に送信する送信部をさらに有することを特徴とする請求項10乃至12のいずれか一項に記載の撮像装置。
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