CN109937489B - 光电转换元件、摄像元件和摄像设备 - Google Patents

光电转换元件、摄像元件和摄像设备 Download PDF

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CN109937489B
CN109937489B CN201780069863.6A CN201780069863A CN109937489B CN 109937489 B CN109937489 B CN 109937489B CN 201780069863 A CN201780069863 A CN 201780069863A CN 109937489 B CN109937489 B CN 109937489B
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photoelectric conversion
substituted
organic compound
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CN109937489A (zh
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盐原悟
山田直树
高桥哲生
镰谷淳
西出洋祐
宫下广和
山口智奈
岩胁洋伸
大类博挥
梶本典史
板桥真澄
伊藤健太郎
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Canon Inc
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    • H10K85/649Aromatic compounds comprising a hetero atom
    • H10K85/655Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60Noise processing, e.g. detecting, correcting, reducing or removing noise
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    • H10F30/20Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
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  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Inorganic Chemistry (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Electroluminescent Light Sources (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
CN201780069863.6A 2016-11-11 2017-11-02 光电转换元件、摄像元件和摄像设备 Active CN109937489B (zh)

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JP2016-220717 2016-11-11
JP2016220717 2016-11-11
JP2017177880A JP7102114B2 (ja) 2016-11-11 2017-09-15 光電変換素子、撮像素子および撮像装置
JP2017-177880 2017-09-15
PCT/JP2017/039722 WO2018088325A1 (ja) 2016-11-11 2017-11-02 光電変換素子、撮像素子および撮像装置

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CN113557614A (zh) 2019-03-28 2021-10-26 索尼集团公司 固态摄像元件、固态摄像元件的制造方法、光电转换元件、摄像装置和电子设备
KR20210146289A (ko) * 2019-03-28 2021-12-03 소니그룹주식회사 고체 촬상 소자 및 고체 촬상 소자의 제조 방법 및 고체 촬상 장치
JP7541820B2 (ja) * 2019-11-01 2024-08-29 キヤノン株式会社 有機化合物及び有機発光素子
CN112174839A (zh) * 2020-11-05 2021-01-05 四川大学华西医院 一种脂滴特异性标记的荧光探针及其合成方法和应用
CN118435719A (zh) 2022-01-21 2024-08-02 日铁化学材料株式会社 摄像用的光电转换元件用材料以及光电转换元件
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EP3540804B1 (en) 2025-01-08
EP3540804A4 (en) 2020-09-16
JP2018085499A (ja) 2018-05-31
JP7102114B2 (ja) 2022-07-19
EP3540804A1 (en) 2019-09-18
US12336311B2 (en) 2025-06-17
CN109937489A (zh) 2019-06-25
US20190267411A1 (en) 2019-08-29

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