JP7088224B2 - 半導体モジュールおよびこれに用いられる半導体装置 - Google Patents

半導体モジュールおよびこれに用いられる半導体装置 Download PDF

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Publication number
JP7088224B2
JP7088224B2 JP2020027188A JP2020027188A JP7088224B2 JP 7088224 B2 JP7088224 B2 JP 7088224B2 JP 2020027188 A JP2020027188 A JP 2020027188A JP 2020027188 A JP2020027188 A JP 2020027188A JP 7088224 B2 JP7088224 B2 JP 7088224B2
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semiconductor device
semiconductor
heat
semiconductor module
lead frame
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Japanese (ja)
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JP2020161807A (ja
JP2020161807A5 (enExample
Inventor
青吾 大澤
康嗣 大倉
貴博 中野
直仁 水野
正幸 竹中
仁浩 犬塚
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Denso Corp
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Denso Corp
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Priority to CN202080021722.9A priority Critical patent/CN113632214B/zh
Priority to KR1020217029748A priority patent/KR102548231B1/ko
Priority to PCT/JP2020/010845 priority patent/WO2020189508A1/ja
Publication of JP2020161807A publication Critical patent/JP2020161807A/ja
Publication of JP2020161807A5 publication Critical patent/JP2020161807A5/ja
Priority to US17/476,326 priority patent/US20220005743A1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/18—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of the types provided for in two or more different main groups of the same subclass of H10B, H10D, H10F, H10H, H10K or H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H01L2224/331—Disposition
    • H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H01L2224/33181—On opposite sides of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP2020027188A 2019-03-19 2020-02-20 半導体モジュールおよびこれに用いられる半導体装置 Active JP7088224B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN202080021722.9A CN113632214B (zh) 2019-03-19 2020-03-12 半导体模组及用于该半导体模组的半导体装置
KR1020217029748A KR102548231B1 (ko) 2019-03-19 2020-03-12 반도체 모듈 및 이에 사용되는 반도체 장치
PCT/JP2020/010845 WO2020189508A1 (ja) 2019-03-19 2020-03-12 半導体モジュールおよびこれに用いられる半導体装置
US17/476,326 US20220005743A1 (en) 2019-03-19 2021-09-15 Semiconductor module and semiconductor device used therefor

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Application Number Priority Date Filing Date Title
JP2019051516 2019-03-19
JP2019051516 2019-03-19

Publications (3)

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JP2020161807A JP2020161807A (ja) 2020-10-01
JP2020161807A5 JP2020161807A5 (enExample) 2021-03-18
JP7088224B2 true JP7088224B2 (ja) 2022-06-21

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JP (1) JP7088224B2 (enExample)
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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022152703A (ja) * 2021-03-29 2022-10-12 株式会社デンソー 半導体装置
DE112022004698T5 (de) * 2021-09-30 2024-07-11 Rohm Co., Ltd. Halbleiterbauelement
CN117542820A (zh) * 2022-08-02 2024-02-09 力特半导体（无锡）有限公司 用于电视装置的封装结构组件
CN115602656B (zh) * 2022-12-12 2023-10-27 英诺赛科(苏州)半导体有限公司 半导体组件及其制备方法、半导体装置

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JP2006222121A (ja) 2005-02-08 2006-08-24 Renesas Technology Corp 半導体装置の製造方法
JP2010287651A (ja) 2009-06-10 2010-12-24 Nissan Motor Co Ltd 半導体装置
JP2011181879A (ja) 2010-02-04 2011-09-15 Denso Corp 半導体装置およびその製造方法
JP2012243890A (ja) 2011-05-18 2012-12-10 Denso Corp 半導体装置およびその製造方法
JP2013172105A (ja) 2012-02-22 2013-09-02 Toyota Motor Corp 半導体モジュール
JP2014157927A (ja) 2013-02-15 2014-08-28 Denso Corp 半導体装置及びその製造方法
WO2015029511A1 (ja) 2013-08-28 2015-03-05 三菱電機株式会社 半導体装置およびその製造方法
JP2016105523A (ja) 2016-03-10 2016-06-09 三菱電機株式会社 半導体装置及びその製造方法
WO2020017465A1 (ja) 2018-07-19 2020-01-23 マイクロモジュールテクノロジー株式会社 半導体装置及び半導体装置の製造方法
US20200176348A1 (en) 2018-11-30 2020-06-04 Delta Electronics Int'l (Singapore) Pte Ltd Package structure and power module using same

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Publication number Priority date Publication date Assignee Title
JP2006222121A (ja) 2005-02-08 2006-08-24 Renesas Technology Corp 半導体装置の製造方法
JP2010287651A (ja) 2009-06-10 2010-12-24 Nissan Motor Co Ltd 半導体装置
JP2011181879A (ja) 2010-02-04 2011-09-15 Denso Corp 半導体装置およびその製造方法
JP2012243890A (ja) 2011-05-18 2012-12-10 Denso Corp 半導体装置およびその製造方法
JP2013172105A (ja) 2012-02-22 2013-09-02 Toyota Motor Corp 半導体モジュール
JP2014157927A (ja) 2013-02-15 2014-08-28 Denso Corp 半導体装置及びその製造方法
WO2015029511A1 (ja) 2013-08-28 2015-03-05 三菱電機株式会社 半導体装置およびその製造方法
JP2016105523A (ja) 2016-03-10 2016-06-09 三菱電機株式会社 半導体装置及びその製造方法
WO2020017465A1 (ja) 2018-07-19 2020-01-23 マイクロモジュールテクノロジー株式会社 半導体装置及び半導体装置の製造方法
US20200176348A1 (en) 2018-11-30 2020-06-04 Delta Electronics Int'l (Singapore) Pte Ltd Package structure and power module using same

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CN113632214A (zh) 2021-11-09
CN113632214B (zh) 2023-12-08
KR102548231B1 (ko) 2023-06-27
JP2020161807A (ja) 2020-10-01
KR20210127229A (ko) 2021-10-21

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