KR102548231B1 - 반도체 모듈 및 이에 사용되는 반도체 장치 - Google Patents

반도체 모듈 및 이에 사용되는 반도체 장치 Download PDF

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KR102548231B1
KR102548231B1 KR1020217029748A KR20217029748A KR102548231B1 KR 102548231 B1 KR102548231 B1 KR 102548231B1 KR 1020217029748 A KR1020217029748 A KR 1020217029748A KR 20217029748 A KR20217029748 A KR 20217029748A KR 102548231 B1 KR102548231 B1 KR 102548231B1
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semiconductor device
semiconductor
heat
heat dissipation
lead frame
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KR20210127229A (ko
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세이고 오사와
야스시 오쿠라
다카히로 나카노
나오히토 미즈노
마사유키 다케나카
요시히로 이누츠카
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가부시키가이샤 덴소
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/12Mountings, e.g. non-detachable insulating substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
    • HELECTRICITY
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    • H01L25/00Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/18Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of the types provided for in two or more different main groups of the same subclass of H10B, H10D, H10F, H10H, H10K or H10N
    • HELECTRICITY
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04105Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
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    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601Structure
    • H01L2224/0603Bonding areas having different sizes, e.g. different heights or widths
    • HELECTRICITY
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18High density interconnect [HDI] connectors; Manufacturing methods related thereto
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    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/2612Auxiliary members for layer connectors, e.g. spacers
    • HELECTRICITY
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/33Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H01L2224/331Disposition
    • H01L2224/3318Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H01L2224/33181On opposite sides of the body
    • HELECTRICITY
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4847Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73253Bump and layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
KR1020217029748A 2019-03-19 2020-03-12 반도체 모듈 및 이에 사용되는 반도체 장치 Active KR102548231B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JPJP-P-2019-051516 2019-03-19
JP2019051516 2019-03-19
JPJP-P-2020-027188 2020-02-20
JP2020027188A JP7088224B2 (ja) 2019-03-19 2020-02-20 半導体モジュールおよびこれに用いられる半導体装置
PCT/JP2020/010845 WO2020189508A1 (ja) 2019-03-19 2020-03-12 半導体モジュールおよびこれに用いられる半導体装置

Publications (2)

Publication Number Publication Date
KR20210127229A KR20210127229A (ko) 2021-10-21
KR102548231B1 true KR102548231B1 (ko) 2023-06-27

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JP (1) JP7088224B2 (enExample)
KR (1) KR102548231B1 (enExample)
CN (1) CN113632214B (enExample)

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Publication number Priority date Publication date Assignee Title
JP2022152703A (ja) * 2021-03-29 2022-10-12 株式会社デンソー 半導体装置
JPWO2023053874A1 (enExample) * 2021-09-30 2023-04-06
CN117542820A (zh) * 2022-08-02 2024-02-09 力特半导体(无锡)有限公司 用于电视装置的封装结构组件
CN115602656B (zh) * 2022-12-12 2023-10-27 英诺赛科(苏州)半导体有限公司 半导体组件及其制备方法、半导体装置

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JP2006222121A (ja) 2005-02-08 2006-08-24 Renesas Technology Corp 半導体装置の製造方法
JP2010287651A (ja) 2009-06-10 2010-12-24 Nissan Motor Co Ltd 半導体装置
JP2016105523A (ja) 2016-03-10 2016-06-09 三菱電機株式会社 半導体装置及びその製造方法
JP2019029410A (ja) 2017-07-26 2019-02-21 トヨタ自動車株式会社 半導体モジュール

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JP3525832B2 (ja) 1999-11-24 2004-05-10 株式会社デンソー 半導体装置
TWI317991B (en) * 2003-12-19 2009-12-01 Advanced Semiconductor Eng Semiconductor package with flip chip on leadframe
US7830011B2 (en) * 2004-03-15 2010-11-09 Yamaha Corporation Semiconductor element and wafer level chip size package therefor
JP5118982B2 (ja) * 2007-01-31 2013-01-16 三洋電機株式会社 半導体モジュールおよびその製造方法
JP2011065544A (ja) * 2009-09-18 2011-03-31 Hitachi Information Systems Ltd 検査項目作成システム
JP5126201B2 (ja) * 2009-10-23 2013-01-23 株式会社デンソー 半導体モジュールおよびその製造方法
JP5709218B2 (ja) * 2009-11-27 2015-04-30 日本電気株式会社 半導体装置、3次元実装型半導体装置、半導体モジュール、電子機器、及びその製造方法
JP5126278B2 (ja) 2010-02-04 2013-01-23 株式会社デンソー 半導体装置およびその製造方法
JP2011165793A (ja) * 2010-02-08 2011-08-25 Renesas Electronics Corp 半導体装置及びその製造方法、並びに電子装置
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JP5383717B2 (ja) * 2011-01-04 2014-01-08 三菱電機株式会社 半導体装置
JP5729126B2 (ja) 2011-05-18 2015-06-03 株式会社デンソー 半導体装置の製造方法
JP5637156B2 (ja) 2012-02-22 2014-12-10 トヨタ自動車株式会社 半導体モジュール
JP2014063844A (ja) * 2012-09-20 2014-04-10 Sony Corp 半導体装置、半導体装置の製造方法及び電子機器
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JP6953859B2 (ja) * 2017-07-25 2021-10-27 株式会社デンソー 半導体装置
JP7204174B2 (ja) 2018-07-19 2023-01-16 マイクロモジュールテクノロジー株式会社 半導体装置及び半導体装置の製造方法
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Publication number Priority date Publication date Assignee Title
JP2006222121A (ja) 2005-02-08 2006-08-24 Renesas Technology Corp 半導体装置の製造方法
JP2010287651A (ja) 2009-06-10 2010-12-24 Nissan Motor Co Ltd 半導体装置
JP2016105523A (ja) 2016-03-10 2016-06-09 三菱電機株式会社 半導体装置及びその製造方法
JP2019029410A (ja) 2017-07-26 2019-02-21 トヨタ自動車株式会社 半導体モジュール

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JP2020161807A (ja) 2020-10-01
CN113632214B (zh) 2023-12-08
KR20210127229A (ko) 2021-10-21
JP7088224B2 (ja) 2022-06-21

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