JP7010116B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP7010116B2 JP7010116B2 JP2018071779A JP2018071779A JP7010116B2 JP 7010116 B2 JP7010116 B2 JP 7010116B2 JP 2018071779 A JP2018071779 A JP 2018071779A JP 2018071779 A JP2018071779 A JP 2018071779A JP 7010116 B2 JP7010116 B2 JP 7010116B2
- Authority
- JP
- Japan
- Prior art keywords
- high frequency
- underfill
- semiconductor chip
- wall portion
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
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- 239000000758 substrate Substances 0.000 claims description 90
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- 239000000463 material Substances 0.000 description 89
- 229910000679 solder Inorganic materials 0.000 description 62
- 238000000034 method Methods 0.000 description 29
- 239000010408 film Substances 0.000 description 20
- 230000008569 process Effects 0.000 description 20
- 238000004519 manufacturing process Methods 0.000 description 18
- 239000010949 copper Substances 0.000 description 11
- 230000000694 effects Effects 0.000 description 10
- 239000007788 liquid Substances 0.000 description 9
- 238000009713 electroplating Methods 0.000 description 8
- 239000011810 insulating material Substances 0.000 description 8
- 239000000945 filler Substances 0.000 description 7
- 238000003892 spreading Methods 0.000 description 7
- 230000007480 spreading Effects 0.000 description 7
- 239000007769 metal material Substances 0.000 description 6
- 238000009736 wetting Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 4
- 238000007772 electroless plating Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
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- 238000012986 modification Methods 0.000 description 4
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- 230000009471 action Effects 0.000 description 3
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- 239000003822 epoxy resin Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000007257 malfunction Effects 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 239000011800 void material Substances 0.000 description 3
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000013007 heat curing Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000002940 repellent Effects 0.000 description 2
- 239000005871 repellent Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005429 filling process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
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- 239000000057 synthetic resin Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15151—Shape the die mounting substrate comprising an aperture, e.g. for underfilling, outgassing, window type wire connections
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018071779A JP7010116B2 (ja) | 2018-04-03 | 2018-04-03 | 半導体装置 |
| PCT/JP2019/011947 WO2019193986A1 (ja) | 2018-04-03 | 2019-03-21 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018071779A JP7010116B2 (ja) | 2018-04-03 | 2018-04-03 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019186281A JP2019186281A (ja) | 2019-10-24 |
| JP2019186281A5 JP2019186281A5 (enExample) | 2020-12-24 |
| JP7010116B2 true JP7010116B2 (ja) | 2022-01-26 |
Family
ID=68100712
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018071779A Active JP7010116B2 (ja) | 2018-04-03 | 2018-04-03 | 半導体装置 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP7010116B2 (enExample) |
| WO (1) | WO2019193986A1 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7248849B1 (ja) | 2022-08-03 | 2023-03-29 | 株式会社フジクラ | 半導体パッケージおよび高周波モジュール |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000269384A (ja) | 1999-03-12 | 2000-09-29 | Nec Corp | マイクロ波・ミリ波回路装置及びその製造方法 |
| JP2006287962A (ja) | 2006-05-19 | 2006-10-19 | Mitsubishi Electric Corp | 高周波送受信モジュール |
| JP2006344672A (ja) | 2005-06-07 | 2006-12-21 | Fujitsu Ltd | 半導体チップとそれを用いた半導体装置 |
| JP2007518379A (ja) | 2004-01-13 | 2007-07-05 | レイセオン・カンパニー | 回路基板組み立て品および回路基板へのチップの取り付け方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3207222B2 (ja) * | 1991-08-29 | 2001-09-10 | 株式会社東芝 | 電子部品装置 |
| JPH06204293A (ja) * | 1992-12-28 | 1994-07-22 | Rohm Co Ltd | 半導体装置 |
| JP6183811B2 (ja) * | 2014-06-30 | 2017-08-23 | インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Machines Corporation | 接合構造体および無線通信装置 |
| JP6566846B2 (ja) * | 2015-11-20 | 2019-08-28 | 新日本無線株式会社 | 中空パッケージ及びその製造方法 |
-
2018
- 2018-04-03 JP JP2018071779A patent/JP7010116B2/ja active Active
-
2019
- 2019-03-21 WO PCT/JP2019/011947 patent/WO2019193986A1/ja not_active Ceased
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000269384A (ja) | 1999-03-12 | 2000-09-29 | Nec Corp | マイクロ波・ミリ波回路装置及びその製造方法 |
| JP2007518379A (ja) | 2004-01-13 | 2007-07-05 | レイセオン・カンパニー | 回路基板組み立て品および回路基板へのチップの取り付け方法 |
| JP2006344672A (ja) | 2005-06-07 | 2006-12-21 | Fujitsu Ltd | 半導体チップとそれを用いた半導体装置 |
| JP2006287962A (ja) | 2006-05-19 | 2006-10-19 | Mitsubishi Electric Corp | 高周波送受信モジュール |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2019186281A (ja) | 2019-10-24 |
| WO2019193986A1 (ja) | 2019-10-10 |
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