JP7008445B2 - 撮像装置及びチップ - Google Patents
撮像装置及びチップ Download PDFInfo
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- JP7008445B2 JP7008445B2 JP2017150033A JP2017150033A JP7008445B2 JP 7008445 B2 JP7008445 B2 JP 7008445B2 JP 2017150033 A JP2017150033 A JP 2017150033A JP 2017150033 A JP2017150033 A JP 2017150033A JP 7008445 B2 JP7008445 B2 JP 7008445B2
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- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- FVAUCKIRQBBSSJ-UHFFFAOYSA-M sodium iodide Inorganic materials [Na+].[I-] FVAUCKIRQBBSSJ-UHFFFAOYSA-M 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- YPMOSINXXHVZIL-UHFFFAOYSA-N sulfanylideneantimony Chemical compound [Sb]=S YPMOSINXXHVZIL-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Images
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Description
複数の第1の画素と、第1の回路と、第2の回路と、第3の回路と、を有し、第1の画素は、光電変換素子を有し、光電変換素子は、第1の回路と電気的に接続され、第1の回路は、第2の回路と電気的に接続され、第2の回路は、第3の回路と電気的に接続され、第1の画素は、ニューラルネットワークにおけるニューロンの入力信号を生成し、第1の回路と、第2の回路と、第3の回路と、は、ニューロンの機能を有し、第3の回路は、ニューラルネットワークに接続されるインターフェースを有することを特徴とする撮像装置である。
本実施の形態では、ニューラルネットワークに接続するインターフェースを有する撮像装置について、図1乃至図4を用いて説明する。
トランジスタ49のソース又はドレインの一方は、端子Wd1(75)と電気的に接続され、トランジスタ49のソース又はドレインの他方は、容量素子C3の電極の一方と、トランジスタ46のゲートとが電気的に接続され、トランジスタ49のゲートは端子W1(74)と電気的に接続されている。
本実施の形態では、ニューラルネットワークに接続するインターフェースを有する撮像装置について、図5乃至図8を用いて説明する。
本実施の形態では、実施の形態1の撮像装置に構造について、図9乃至図20を用いて説明する。
本実施の形態では、本発明の一態様に用いることのできるOSトランジスタについて図面を用いて説明する。なお、本実施の形態における図面では、明瞭化のために一部の要素を拡大、縮小、又は省略して図示している。
本実施の形態では、実施の形態3に示したトランジスタの構成要素について詳細を説明する。
本明細書等において、金属酸化物(metal oxide)とは、広い表現での金属の酸化物である。金属酸化物は、酸化物絶縁体、酸化物導電体(透明酸化物導電体を含む)、酸化物半導体(Oxide Semiconductor又は単にOSともいう)などに分類される。例えば、トランジスタの半導体層に金属酸化物を用いた場合、当該金属酸化物を酸化物半導体と呼称する場合がある。つまり、金属酸化物が増幅作用、整流作用、及びスイッチング作用の少なくとも1つを有する場合、当該金属酸化物を、金属酸化物半導体(metal oxide semiconductor)、略してOSと呼ぶことができる。また、OSトランジスタと記載する場合においては、金属酸化物又は酸化物半導体を有するトランジスタと換言することができる。
以下では、本発明の一態様で開示されるトランジスタに用いることができるCAC-OSの構成について説明する。
本実施の形態では、イメージセンサチップを収めたパッケージ及びカメラモジュールの一例について説明する。当該イメージセンサチップには、本発明の一態様の撮像装置の構成を用いることができる。
本発明の一態様に係る撮像装置を用いることができる電子機器として、表示機器、パーソナルコンピュータ、記録媒体を備えた画像記憶装置又は画像再生装置、携帯電話、携帯型を含むゲーム機、携帯データ端末、電子書籍端末、ビデオカメラ、デジタルスチルカメラ等のカメラ、ゴーグル型ディスプレイ(ヘッドマウントディスプレイ)、ナビゲーションシステム、音響再生装置(カーオーディオ、デジタルオーディオプレイヤー等)、複写機、ファクシミリ、プリンタ、プリンタ複合機、現金自動預け入れ払い機(ATM)、自動販売機などが挙げられる。これら電子機器の具体例を図31に示す。
a2 出力信号
b1 出力信号
c1 出力信号
C1 容量素子
C2 容量素子
C3 容量素子
CN1 カウンター回路
CN2 カウンター回路
cnt1 出力信号
Fn1 フローティングノード
G1 走査線
G2 走査線
OUT1 信号線
R1 抵抗素子
Vbias2 端子
Wd1 信号線
Wd2 信号線
10 撮像素子
20 画素
20a 判定回路
20A 画素
20B 画素
20C 画素
21 受光回路
21a 受光回路
22 増幅回路
22a 増幅回路
22b メモリ回路
22c 加算回路
23 メモリ回路
26 アナログデジタル変換回路
26a コンパレータ
26b カウンター回路
27 デコーダ回路
28 セレクタ回路
29 制御部
30 特徴抽出回路
30a オペアンプ
30N シナプス回路
31 判定出力回路
31a 演算回路
31b メモリ回路
31N 活性化関数回路
32 特徴抽出回路
32a 入力選択回路
32b インバータ
32c カウンター回路
32N シナプス回路
33 出力回路
33a 判定回路
33b 回路
33c メモリ回路
33N 活性化関数回路
37 端子
38 端子
41 トランジスタ
42 トランジスタ
43 トランジスタ
44 トランジスタ
44a トランジスタ
44b トランジスタ
45a トランジスタ
45b トランジスタ
46 トランジスタ
47 トランジスタ
48 トランジスタ
49 トランジスタ
69 配線
80 絶縁層
81a 絶縁層
81b 絶縁層
81e 絶縁層
81g 絶縁層
81h 絶縁層
82 導電体
82a 導電体
82b 導電体
93 配線
100 撮像装置
101 トランジスタ
102 トランジスタ
103 トランジスタ
104 トランジスタ
105 トランジスタ
106 トランジスタ
107 トランジスタ
115 基板
120 絶縁層
130 酸化物半導体層
130a 酸化物半導体層
130b 酸化物半導体層
130c 酸化物半導体層
130d 酸化物半導体層
140 導電層
145 絶縁層
150 導電層
155 絶縁層
160 絶縁層
170 導電層
171 導電層
172 導電層
173 導電層
180 絶縁層
200 導電体
201 導電体
210 絶縁層
231 領域
232 領域
300 増幅回路
301 入力選択回路
302 アナログデジタル変換回路
303 判定回路
304 メモリ回路
305 選択回路
306 論理回路
310 判定出力回路
561 光電変換層
562 透光性導電層
563 半導体層
564 半導体層
565 半導体層
566 電極
566a 導電層
566b 導電層
567 隔壁
568 正孔注入阻止層
569 電子注入阻止層
571 配線
571a 導電層
571b 導電層
588 配線
600 シリコン基板
620 p+領域
630 p-領域
640 n型領域
650 p+領域
660 半導体層
810 パッケージ基板
811 パッケージ基板
820 カバーガラス
821 レンズカバー
830 接着剤
835 レンズ
840 バンプ
841 ランド
850 イメージセンサチップ
851 イメージセンサチップ
860 電極パッド
861 電極パッド
870 ワイヤ
871 ワイヤ
880 スルーホール
885 ランド
890 ICチップ
901 筐体
902 筐体
903 表示部
904 表示部
905 マイク
906 スピーカー
907 操作キー
908 スタイラス
909 カメラ
911 筐体
912 表示部
919 カメラ
931 筐体
932 表示部
933 リストバンド
935 ボタン
936 竜頭
939 カメラ
951 筐体
952 レンズ
953 支持部
961 筐体
962 シャッターボタン
963 マイク
965 レンズ
967 発光部
971 筐体
972 筐体
973 表示部
974 操作キー
975 レンズ
976 接続部
1530 遮光層
1540 マイクロレンズアレイ
1550a 光学変換層
1550b 光学変換層
1550c 光学変換層
Claims (6)
- 複数の回路を有し、
前記複数の回路は、それぞれ、複数の画素と、前記複数の画素から出力される複数の第1の信号を用いて演算を行う第1の回路と、を有し、
前記複数の画素は、それぞれ、
第2の信号を生成する第2の回路と、
重み係数に相当する電位を保持する第3の回路と、
前記第3の回路から重み係数に相当する電位が入力され、かつ、前記第2の信号に前記重み係数の乗算を行って前記第1の信号を生成する演算回路と、を有する撮像装置。 - 請求項1において、
前記第2の回路は、光電変換素子と、前記光電変換素子からの出力信号に応じた前記第2の信号の出力を制御するトランジスタと、を有し、
前記第1の回路を含む層の上層に、前記トランジスタを含む層が配置され、前記トランジスタを含む層の上方に、前記光電変換素子が配置される撮像装置。 - 複数の画素を有し、
前記複数の画素は、それぞれ、
第1の信号を生成する第1の回路と、
重み係数に相当する電位を保持する第2の回路と、
前記第2の回路から重み係数に相当する電位が入力され、かつ、前記第1の信号に前記重み係数の乗算を行って出力信号を生成する演算回路と、を有する撮像装置。 - 請求項3において、
前記第1の回路は、光電変換素子と、前記光電変換素子からの出力信号に応じた前記第1の信号の出力を制御するトランジスタと、を有し、
前記演算回路を含む層の上層に、前記トランジスタを含む層が配置され、前記トランジスタを含む層の上方に、前記光電変換素子が配置される撮像装置。 - 請求項1乃至請求項4のいずれか一において、
前記演算回路はニューラルネットワークの少なくとも一部を構成する撮像装置。 - 請求項1乃至請求項5のいずれか一に記載の撮像装置を含むチップ。
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CN111526267B (zh) | 2022-09-02 |
JP7303842B2 (ja) | 2023-07-05 |
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KR20190032387A (ko) | 2019-03-27 |
DE112017003898T5 (de) | 2019-04-18 |
CN111526267A (zh) | 2020-08-11 |
TW202223763A (zh) | 2022-06-16 |
CN109478557A (zh) | 2019-03-15 |
JP2023009241A (ja) | 2023-01-19 |
JP6788757B2 (ja) | 2020-11-25 |
JP2018026812A (ja) | 2018-02-15 |
KR20230133409A (ko) | 2023-09-19 |
TWI758307B (zh) | 2022-03-21 |
KR20210134066A (ko) | 2021-11-08 |
US20180039882A1 (en) | 2018-02-08 |
JP2021108489A (ja) | 2021-07-29 |
US20230297822A1 (en) | 2023-09-21 |
WO2018025116A1 (en) | 2018-02-08 |
TWI789259B (zh) | 2023-01-01 |
KR102322723B1 (ko) | 2021-11-04 |
US20200226457A1 (en) | 2020-07-16 |
JP2020065305A (ja) | 2020-04-23 |
CN109478557B (zh) | 2023-07-28 |
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