JP6979881B2 - 多層金属誘電体膜のpvd堆積とアニール - Google Patents
多層金属誘電体膜のpvd堆積とアニール Download PDFInfo
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- JP6979881B2 JP6979881B2 JP2017565799A JP2017565799A JP6979881B2 JP 6979881 B2 JP6979881 B2 JP 6979881B2 JP 2017565799 A JP2017565799 A JP 2017565799A JP 2017565799 A JP2017565799 A JP 2017565799A JP 6979881 B2 JP6979881 B2 JP 6979881B2
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- H10P14/43—
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
- C23C28/322—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer only coatings of metal elements only
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
- C23C28/345—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
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- H10P14/22—
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- H10P14/418—
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- H10P14/44—
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- H10P95/90—
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- H10W20/031—
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- H10W20/032—
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- H10W20/064—
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- H10W20/075—
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- H10W20/425—
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
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- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Chemical Vapour Deposition (AREA)
- Semiconductor Memories (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Non-Volatile Memory (AREA)
- Crystallography & Structural Chemistry (AREA)
- Laminated Bodies (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/745,367 US10879177B2 (en) | 2015-06-19 | 2015-06-19 | PVD deposition and anneal of multi-layer metal-dielectric film |
| US14/745,367 | 2015-06-19 | ||
| PCT/US2016/035826 WO2016204987A1 (en) | 2015-06-19 | 2016-06-03 | Pvd deposition and anneal of multi-layer metal-dielectric film |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018527456A JP2018527456A (ja) | 2018-09-20 |
| JP2018527456A5 JP2018527456A5 (enExample) | 2019-08-29 |
| JP6979881B2 true JP6979881B2 (ja) | 2021-12-15 |
Family
ID=57545770
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017565799A Active JP6979881B2 (ja) | 2015-06-19 | 2016-06-03 | 多層金属誘電体膜のpvd堆積とアニール |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10879177B2 (enExample) |
| JP (1) | JP6979881B2 (enExample) |
| KR (1) | KR102506953B1 (enExample) |
| CN (1) | CN107873107B (enExample) |
| TW (1) | TWI705149B (enExample) |
| WO (1) | WO2016204987A1 (enExample) |
Family Cites Families (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4930357B1 (enExample) * | 1970-12-30 | 1974-08-12 | ||
| US3852078A (en) * | 1970-12-24 | 1974-12-03 | M Wakatsuki | Mass of polycrystalline cubic system boron nitride and composites of polycrystalline cubic system boron nitride and other hard materials, and processes for manufacturing the same |
| US5272367A (en) | 1988-05-02 | 1993-12-21 | Micron Technology, Inc. | Fabrication of complementary n-channel and p-channel circuits (ICs) useful in the manufacture of dynamic random access memories (drams) |
| JPH0493362A (ja) * | 1990-08-10 | 1992-03-26 | Toshiba Ceramics Co Ltd | 電子部品封止用充填剤およびその製造方法 |
| JPH05267471A (ja) * | 1991-04-05 | 1993-10-15 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
| EP0583871B2 (en) * | 1992-07-11 | 2004-01-07 | Pilkington United Kingdom Limited | Method for preparing reflecting coatings on glass |
| US5700718A (en) * | 1996-02-05 | 1997-12-23 | Micron Technology, Inc. | Method for increased metal interconnect reliability in situ formation of titanium aluminide |
| US6231999B1 (en) * | 1996-06-21 | 2001-05-15 | Cardinal Ig Company | Heat temperable transparent coated glass article |
| US5994217A (en) * | 1996-12-16 | 1999-11-30 | Chartered Semiconductor Manufacturing Ltd. | Post metallization stress relief annealing heat treatment for ARC TiN over aluminum layers |
| US6437441B1 (en) * | 1997-07-10 | 2002-08-20 | Kawasaki Microelectronics, Inc. | Wiring structure of a semiconductor integrated circuit and a method of forming the wiring structure |
| US6136682A (en) * | 1997-10-20 | 2000-10-24 | Motorola Inc. | Method for forming a conductive structure having a composite or amorphous barrier layer |
| US6011646A (en) * | 1998-02-20 | 2000-01-04 | The Regents Of The Unviersity Of California | Method to adjust multilayer film stress induced deformation of optics |
| US6042929A (en) * | 1998-03-26 | 2000-03-28 | Alchemia, Inc. | Multilayer metalized composite on polymer film product and process |
| JP4766724B2 (ja) * | 1999-06-22 | 2011-09-07 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US6475581B2 (en) * | 1999-12-21 | 2002-11-05 | E.I. Du Pont De Nemours And Company | Clay coatings for thermoplastic polymeric resins or films |
| JP4578777B2 (ja) | 2003-02-07 | 2010-11-10 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
| JP2005033095A (ja) | 2003-07-10 | 2005-02-03 | Hitachi Powdered Metals Co Ltd | 熱電変換素子用熱応力緩和パッドの製造方法 |
| US7566900B2 (en) * | 2005-08-31 | 2009-07-28 | Applied Materials, Inc. | Integrated metrology tools for monitoring and controlling large area substrate processing chambers |
| US7416995B2 (en) * | 2005-11-12 | 2008-08-26 | Applied Materials, Inc. | Method for fabricating controlled stress silicon nitride films |
| EP2426552A1 (en) * | 2006-03-03 | 2012-03-07 | Gentex Corporation | Electro-optic elements incorporating improved thin-film coatings |
| CN101395521B (zh) * | 2006-03-03 | 2010-09-29 | 金泰克斯公司 | 改进的薄膜涂层、光电元件和包含这些元件的组件 |
| US7695232B2 (en) * | 2006-06-15 | 2010-04-13 | Applied Materials, Inc. | Multi-level load lock chamber, transfer chamber, and robot suitable for interfacing with same |
| JP2009543355A (ja) | 2006-07-03 | 2009-12-03 | アプライド マテリアルズ インコーポレイテッド | 進歩型フロントエンド処理のためのクラスターツール |
| TWI343630B (en) | 2007-05-15 | 2011-06-11 | Nanya Technology Corp | Method for forming a semiconductor structure |
| KR100881716B1 (ko) * | 2007-07-02 | 2009-02-06 | 주식회사 하이닉스반도체 | 낮은 시트저항의 텅스텐막을 갖는 텅스텐배선 제조 방법 및그를 이용한 반도체소자의 게이트 제조 방법 |
| US20090051026A1 (en) | 2007-08-20 | 2009-02-26 | International Business Machines Corporation | Process for forming metal film and release layer on polymer |
| KR100902106B1 (ko) * | 2007-10-31 | 2009-06-09 | 주식회사 하이닉스반도체 | 텅스텐함유막이 포함된 패턴을 구비한 반도체소자의 제조방법 |
| KR101015125B1 (ko) * | 2008-03-21 | 2011-02-16 | 주식회사 하이닉스반도체 | 계면반응배리어를 구비한 반도체장치 제조 방법 |
| CN101323945A (zh) * | 2008-07-25 | 2008-12-17 | 西南大学 | 含应力缓和层的硬质薄膜及其制备方法 |
| TW201036065A (en) * | 2009-03-20 | 2010-10-01 | Nanya Technology Corp | Method of forming multi metal layers thin film on wafer |
| US8209857B2 (en) * | 2009-06-19 | 2012-07-03 | The Regents Of The University Of Michigan | Method of making a thin film device |
| US8338856B2 (en) * | 2010-08-10 | 2012-12-25 | Omnivision Technologies, Inc. | Backside illuminated image sensor with stressed film |
| US20120097234A1 (en) | 2010-10-26 | 2012-04-26 | International Business Machines Corporation | Using Diffusion Barrier Layer for CuZnSn(S,Se) Thin Film Solar Cell |
| US8530294B2 (en) | 2011-10-21 | 2013-09-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Stress modulation for metal gate semiconductor device |
| US9087839B2 (en) | 2013-03-29 | 2015-07-21 | International Business Machines Corporation | Semiconductor structures with metal lines |
| CN104388899A (zh) * | 2014-12-10 | 2015-03-04 | 武汉大学 | 一种具有MoN/Cr/CrN/Cr纳米复合超厚涂层的活塞环及其制备方法 |
-
2015
- 2015-06-19 US US14/745,367 patent/US10879177B2/en active Active
-
2016
- 2016-06-03 CN CN201680032205.5A patent/CN107873107B/zh active Active
- 2016-06-03 JP JP2017565799A patent/JP6979881B2/ja active Active
- 2016-06-03 WO PCT/US2016/035826 patent/WO2016204987A1/en not_active Ceased
- 2016-06-03 KR KR1020187001800A patent/KR102506953B1/ko active Active
- 2016-06-16 TW TW105118860A patent/TWI705149B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| US10879177B2 (en) | 2020-12-29 |
| US20160372330A1 (en) | 2016-12-22 |
| KR20180010333A (ko) | 2018-01-30 |
| JP2018527456A (ja) | 2018-09-20 |
| KR102506953B1 (ko) | 2023-03-08 |
| CN107873107A (zh) | 2018-04-03 |
| TWI705149B (zh) | 2020-09-21 |
| CN107873107B (zh) | 2022-01-28 |
| TW201704508A (zh) | 2017-02-01 |
| WO2016204987A1 (en) | 2016-12-22 |
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