CN107873107B - 多层金属介电膜的物理气相沉积及退火处理 - Google Patents

多层金属介电膜的物理气相沉积及退火处理 Download PDF

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CN107873107B
CN107873107B CN201680032205.5A CN201680032205A CN107873107B CN 107873107 B CN107873107 B CN 107873107B CN 201680032205 A CN201680032205 A CN 201680032205A CN 107873107 B CN107873107 B CN 107873107B
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layer
substrate
adhesion layer
metal
film stack
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CN107873107A (zh
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于敏锐
马楷
托马斯·权
考施·K·辛格
平尔萱
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Applied Materials Inc
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Applied Materials Inc
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    • H10P14/43—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
    • C23C28/322—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer only coatings of metal elements only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • C23C28/345—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
    • H10P14/22—
    • H10P14/418—
    • H10P14/44—
    • H10P95/90—
    • H10W20/031—
    • H10W20/032—
    • H10W20/064—
    • H10W20/075—
    • H10W20/425—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Semiconductor Memories (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Non-Volatile Memory (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Laminated Bodies (AREA)
CN201680032205.5A 2015-06-19 2016-06-03 多层金属介电膜的物理气相沉积及退火处理 Active CN107873107B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/745,367 US10879177B2 (en) 2015-06-19 2015-06-19 PVD deposition and anneal of multi-layer metal-dielectric film
US14/745,367 2015-06-19
PCT/US2016/035826 WO2016204987A1 (en) 2015-06-19 2016-06-03 Pvd deposition and anneal of multi-layer metal-dielectric film

Publications (2)

Publication Number Publication Date
CN107873107A CN107873107A (zh) 2018-04-03
CN107873107B true CN107873107B (zh) 2022-01-28

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Country Link
US (1) US10879177B2 (enExample)
JP (1) JP6979881B2 (enExample)
KR (1) KR102506953B1 (enExample)
CN (1) CN107873107B (enExample)
TW (1) TWI705149B (enExample)
WO (1) WO2016204987A1 (enExample)

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US6016010A (en) * 1996-02-05 2000-01-18 Micron Technology, Inc. Voidless metallization on titanium aluminide in an interconnect
US6136682A (en) * 1997-10-20 2000-10-24 Motorola Inc. Method for forming a conductive structure having a composite or amorphous barrier layer
JP2004241679A (ja) * 2003-02-07 2004-08-26 Fujitsu Ltd 半導体装置及びその製造方法
CN1964002A (zh) * 2005-11-12 2007-05-16 应用材料公司 用于制备受控应力的氮化硅膜的方法
TW200845306A (en) * 2007-05-15 2008-11-16 Nanya Technology Corp Method for forming a semiconductor structure
CN101323945A (zh) * 2008-07-25 2008-12-17 西南大学 含应力缓和层的硬质薄膜及其制备方法
CN101339918A (zh) * 2007-07-02 2009-01-07 海力士半导体有限公司 制造钨线和使用该钨线制造半导体器件栅极的方法
CN101438205A (zh) * 2006-03-03 2009-05-20 金泰克斯公司 包含imi涂层的电光元件
CN101540294A (zh) * 2008-03-21 2009-09-23 海力士半导体有限公司 制造具有界面阻挡层的半导体器件的方法
TW201036065A (en) * 2009-03-20 2010-10-01 Nanya Technology Corp Method of forming multi metal layers thin film on wafer

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US5272367A (en) 1988-05-02 1993-12-21 Micron Technology, Inc. Fabrication of complementary n-channel and p-channel circuits (ICs) useful in the manufacture of dynamic random access memories (drams)
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CN101339918A (zh) * 2007-07-02 2009-01-07 海力士半导体有限公司 制造钨线和使用该钨线制造半导体器件栅极的方法
CN101540294A (zh) * 2008-03-21 2009-09-23 海力士半导体有限公司 制造具有界面阻挡层的半导体器件的方法
CN101323945A (zh) * 2008-07-25 2008-12-17 西南大学 含应力缓和层的硬质薄膜及其制备方法
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Also Published As

Publication number Publication date
US10879177B2 (en) 2020-12-29
US20160372330A1 (en) 2016-12-22
KR20180010333A (ko) 2018-01-30
JP2018527456A (ja) 2018-09-20
KR102506953B1 (ko) 2023-03-08
CN107873107A (zh) 2018-04-03
JP6979881B2 (ja) 2021-12-15
TWI705149B (zh) 2020-09-21
TW201704508A (zh) 2017-02-01
WO2016204987A1 (en) 2016-12-22

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