TWI705149B - 多層金屬介電膜之物理氣相沉積及退火處理 - Google Patents

多層金屬介電膜之物理氣相沉積及退火處理 Download PDF

Info

Publication number
TWI705149B
TWI705149B TW105118860A TW105118860A TWI705149B TW I705149 B TWI705149 B TW I705149B TW 105118860 A TW105118860 A TW 105118860A TW 105118860 A TW105118860 A TW 105118860A TW I705149 B TWI705149 B TW I705149B
Authority
TW
Taiwan
Prior art keywords
layer
substrate
adhesive
layers
metal layer
Prior art date
Application number
TW105118860A
Other languages
English (en)
Chinese (zh)
Other versions
TW201704508A (zh
Inventor
于敏銳
楷 馬
湯姆士 鄺
卡沙爾Ｋ 辛格
爾萱 平
Original Assignee
美商應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商應用材料股份有限公司 filed Critical 美商應用材料股份有限公司
Publication of TW201704508A publication Critical patent/TW201704508A/zh
Application granted granted Critical
Publication of TWI705149B publication Critical patent/TWI705149B/zh

Links

Images

Classifications

    • H10P14/43—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
    • C23C28/322—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer only coatings of metal elements only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • C23C28/345—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
    • H10P14/22—
    • H10P14/418—
    • H10P14/44—
    • H10P95/90—
    • H10W20/031—
    • H10W20/032—
    • H10W20/064—
    • H10W20/075—
    • H10W20/425—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Semiconductor Memories (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Non-Volatile Memory (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Laminated Bodies (AREA)
TW105118860A 2015-06-19 2016-06-16 多層金屬介電膜之物理氣相沉積及退火處理 TWI705149B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/745,367 US10879177B2 (en) 2015-06-19 2015-06-19 PVD deposition and anneal of multi-layer metal-dielectric film
US14/745,367 2015-06-19

Publications (2)

Publication Number Publication Date
TW201704508A TW201704508A (zh) 2017-02-01
TWI705149B true TWI705149B (zh) 2020-09-21

Family

ID=57545770

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105118860A TWI705149B (zh) 2015-06-19 2016-06-16 多層金屬介電膜之物理氣相沉積及退火處理

Country Status (6)

Country Link
US (1) US10879177B2 (enExample)
JP (1) JP6979881B2 (enExample)
KR (1) KR102506953B1 (enExample)
CN (1) CN107873107B (enExample)
TW (1) TWI705149B (enExample)
WO (1) WO2016204987A1 (enExample)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI343630B (en) * 2007-05-15 2011-06-11 Nanya Technology Corp Method for forming a semiconductor structure

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4930357B1 (enExample) * 1970-12-30 1974-08-12
US3852078A (en) * 1970-12-24 1974-12-03 M Wakatsuki Mass of polycrystalline cubic system boron nitride and composites of polycrystalline cubic system boron nitride and other hard materials, and processes for manufacturing the same
US5272367A (en) 1988-05-02 1993-12-21 Micron Technology, Inc. Fabrication of complementary n-channel and p-channel circuits (ICs) useful in the manufacture of dynamic random access memories (drams)
JPH0493362A (ja) * 1990-08-10 1992-03-26 Toshiba Ceramics Co Ltd 電子部品封止用充填剤およびその製造方法
JPH05267471A (ja) * 1991-04-05 1993-10-15 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
EP0583871B2 (en) * 1992-07-11 2004-01-07 Pilkington United Kingdom Limited Method for preparing reflecting coatings on glass
US5700718A (en) * 1996-02-05 1997-12-23 Micron Technology, Inc. Method for increased metal interconnect reliability in situ formation of titanium aluminide
US6231999B1 (en) * 1996-06-21 2001-05-15 Cardinal Ig Company Heat temperable transparent coated glass article
US5994217A (en) * 1996-12-16 1999-11-30 Chartered Semiconductor Manufacturing Ltd. Post metallization stress relief annealing heat treatment for ARC TiN over aluminum layers
US6437441B1 (en) * 1997-07-10 2002-08-20 Kawasaki Microelectronics, Inc. Wiring structure of a semiconductor integrated circuit and a method of forming the wiring structure
US6136682A (en) * 1997-10-20 2000-10-24 Motorola Inc. Method for forming a conductive structure having a composite or amorphous barrier layer
US6011646A (en) * 1998-02-20 2000-01-04 The Regents Of The Unviersity Of California Method to adjust multilayer film stress induced deformation of optics
US6042929A (en) * 1998-03-26 2000-03-28 Alchemia, Inc. Multilayer metalized composite on polymer film product and process
JP4766724B2 (ja) * 1999-06-22 2011-09-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6475581B2 (en) * 1999-12-21 2002-11-05 E.I. Du Pont De Nemours And Company Clay coatings for thermoplastic polymeric resins or films
JP4578777B2 (ja) 2003-02-07 2010-11-10 富士通セミコンダクター株式会社 半導体装置及びその製造方法
JP2005033095A (ja) 2003-07-10 2005-02-03 Hitachi Powdered Metals Co Ltd 熱電変換素子用熱応力緩和パッドの製造方法
US7566900B2 (en) * 2005-08-31 2009-07-28 Applied Materials, Inc. Integrated metrology tools for monitoring and controlling large area substrate processing chambers
US7416995B2 (en) * 2005-11-12 2008-08-26 Applied Materials, Inc. Method for fabricating controlled stress silicon nitride films
EP2426552A1 (en) * 2006-03-03 2012-03-07 Gentex Corporation Electro-optic elements incorporating improved thin-film coatings
CN101395521B (zh) * 2006-03-03 2010-09-29 金泰克斯公司 改进的薄膜涂层、光电元件和包含这些元件的组件
US7695232B2 (en) * 2006-06-15 2010-04-13 Applied Materials, Inc. Multi-level load lock chamber, transfer chamber, and robot suitable for interfacing with same
JP2009543355A (ja) 2006-07-03 2009-12-03 アプライド マテリアルズ インコーポレイテッド 進歩型フロントエンド処理のためのクラスターツール
KR100881716B1 (ko) * 2007-07-02 2009-02-06 주식회사 하이닉스반도체 낮은 시트저항의 텅스텐막을 갖는 텅스텐배선 제조 방법 및그를 이용한 반도체소자의 게이트 제조 방법
US20090051026A1 (en) 2007-08-20 2009-02-26 International Business Machines Corporation Process for forming metal film and release layer on polymer
KR100902106B1 (ko) * 2007-10-31 2009-06-09 주식회사 하이닉스반도체 텅스텐함유막이 포함된 패턴을 구비한 반도체소자의 제조방법
KR101015125B1 (ko) * 2008-03-21 2011-02-16 주식회사 하이닉스반도체 계면반응배리어를 구비한 반도체장치 제조 방법
CN101323945A (zh) * 2008-07-25 2008-12-17 西南大学 含应力缓和层的硬质薄膜及其制备方法
TW201036065A (en) * 2009-03-20 2010-10-01 Nanya Technology Corp Method of forming multi metal layers thin film on wafer
US8209857B2 (en) * 2009-06-19 2012-07-03 The Regents Of The University Of Michigan Method of making a thin film device
US8338856B2 (en) * 2010-08-10 2012-12-25 Omnivision Technologies, Inc. Backside illuminated image sensor with stressed film
US20120097234A1 (en) 2010-10-26 2012-04-26 International Business Machines Corporation Using Diffusion Barrier Layer for CuZnSn(S,Se) Thin Film Solar Cell
US8530294B2 (en) 2011-10-21 2013-09-10 Taiwan Semiconductor Manufacturing Company, Ltd. Stress modulation for metal gate semiconductor device
US9087839B2 (en) 2013-03-29 2015-07-21 International Business Machines Corporation Semiconductor structures with metal lines
CN104388899A (zh) * 2014-12-10 2015-03-04 武汉大学 一种具有MoN/Cr/CrN/Cr纳米复合超厚涂层的活塞环及其制备方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI343630B (en) * 2007-05-15 2011-06-11 Nanya Technology Corp Method for forming a semiconductor structure

Also Published As

Publication number Publication date
US10879177B2 (en) 2020-12-29
US20160372330A1 (en) 2016-12-22
KR20180010333A (ko) 2018-01-30
JP2018527456A (ja) 2018-09-20
KR102506953B1 (ko) 2023-03-08
CN107873107A (zh) 2018-04-03
JP6979881B2 (ja) 2021-12-15
CN107873107B (zh) 2022-01-28
TW201704508A (zh) 2017-02-01
WO2016204987A1 (en) 2016-12-22

Similar Documents

Publication Publication Date Title
CN106011777B (zh) 钨膜的成膜方法
KR101892344B1 (ko) 금속막의 성막 방법
CN113795609A (zh) 非金属表面上的选择性沉积
TWI730990B (zh) 用於沉積介電質阻障層以及含鋁的蝕刻終止層之方法
TW202101547A (zh) 用於形成金屬間隙填充物之方法
TW202114077A (zh) 處理動態隨機存取記憶體之方法
CN107731743A (zh) 一种多晶硅部分替换钨的应力控制方法及结构
TWI705149B (zh) 多層金屬介電膜之物理氣相沉積及退火處理
CN103633012B (zh) 改善硅片翘曲度的方法
JP2013182961A (ja) 半導体製造装置及び半導体装置の製造方法
CN107851608B (zh) 减低互连介电阻挡堆叠中陷阱引发的电容的方法
JP2009130288A (ja) 薄膜形成方法
TWI373809B (en) Integrated substrate processing in a vacuum processing tool
TWI743216B (zh) 用以防止在處理腔室之間的干擾的方法和設備
TW202238840A (zh) 反向選擇性蝕刻終止層
CN100583456C (zh) 玻璃基板表面金属层结构及其制作方法
CN108022714A (zh) 一种软磁薄膜及其制备方法
TW202206637A (zh) 具有過渡金屬二硫族化物之超薄膜
CN113299598A (zh) 一种半导体结构制造方法
TWI501321B (zh) 製造半導體元件之方法及設備、及半導體元件
KR100714039B1 (ko) 반도체 소자의 제조 방법
TW202105465A (zh) 基於金屬的氫氣阻障
JP2014212200A (ja) 半導体装置及びその製造方法