JP6937911B2 - マイクロデバイスのマストランスファー方法 - Google Patents
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Description
Claims (11)
- ベースを提供し、前記ベースの表面に感光材料層を形成すると共に、前記感光材料層に対して第1の温度で半固化処理を行なうステップにおいて、前記第1の温度が前記感光材料層の完全固化温度よりも低いことで、前記感光材料層が粘性を具えることを確保する、ステップ(1)と、
マイクロデバイスのアレイを提供し、前記感光材料層の表面粘性によって、前記マイクロデバイスのアレイを前記感光材料層の表面に掴持するステップ(2)と、
前記マイクロデバイスをフォトマスクとして、前記感光材料層に対してセルフアライン露光処理および現像処理を行ない、前記感光材料層を前記マイクロデバイスに対応する複数の支持構成に分割させるステップにおいて、前記支持構成は、前記マイクロデバイスに粘着する第1の支持部と、前記第1の支持部と前記ベースとを連結する第2の支持部と、を含み、且つ前記第2の支持部の径方向幅が前記第1の支持部の径方向幅よりも小さいステップ(3)と、
パッケージ基板を提供し、前記パッケージ基板の表面には、前記マイクロデバイスのアレイに対応する共晶金属があり、前記マイクロデバイスのアレイと前記共晶金属とを位置合わせして接合すると共に、共晶処理を行なうステップ(4)と、
前記第2の支持部から前記マイクロデバイスおよび前記ベースを分離すると共に、前記マイクロデバイスの上にある感光材料層を取り除いて、マイクロデバイスのマストランスファーを実現するステップ(5)と、を含む、ことを特徴とする、マイクロデバイスのマストランスファー方法。 - ステップ(3)において、前記セルフアライン露光処理の強度を制御することによって、現像処理後の前記第1の支持部が台形構造を呈するようにして、前記第1の支持部および前記マイクロデバイスの粘着面積を増大し、前記マイクロデバイスおよび前記ベースの分離に有利となるように、前記第2の支持部がマイクロ柱構造を呈していることを特徴とする、請求項1に記載のマイクロデバイスのマストランスファー方法。
- 前記マイクロ柱構造の径方向幅は、前記台形構造の上面の径方向幅以下であると共に、前記マイクロ柱構造の径方向幅は、前記マイクロデバイスを安定に支持するために必要な最小幅以上であることを特徴とする、請求項2に記載のマイクロデバイスのマストランスファー方法。
- ステップ(3)において、前記セルフアライン露光処理は、紫外線露光処理を含み、前記セルフアライン露光処理の光線が前記マイクロデバイスの表面に対して垂直になるよう入射して、前記第2の支持部を前記第1の支持部の中心区域に連接させて前記マイクロデバイスの位置偏移を防止することを特徴とする、請求項1に記載のマイクロデバイスのマストランスファー方法。
- 前記感光材料層は、感光性のポリメタクリル酸メチル樹脂(PMMA)またはジメチルポリシロキサン(PDMS)またはポリイミド(PI)を含み、前記完全固化温度が150℃〜250℃の範囲内にある上、前記第1の温度が60℃〜140℃の範囲内にあって、前記感光材料層が粘性を具えること確保することを特徴とする、請求項1に記載のマイクロデバイスのマストランスファー方法。
- ステップ(2)において、前記マイクロデバイスは、前記感光材料層の粘性表面により掴持されやすいように、サスペンション式構造が採用されていることをさせることを特徴とする、請求項1に記載のマイクロデバイスのマストランスファー方法。
- 前記サスペンション式構造は、
支持層と、
それぞれ前記支持層の表面にある複数の安定柱と、
マイクロデバイスのアレイであって、該アレイにおける各マイクロデバイスが若干個の安定柱により支持されているマイクロデバイスのアレイと、を含むことを特徴とする、請求項6に記載のマイクロデバイスのマストランスファー方法。 - ステップ(2)において、前記マイクロデバイスのアレイを前記感光材料層の表面に掴持してから、前記感光材料層に対してさらに固化処理を行なうステップをさらに含んで、前記マイクロデバイスおよび前記感光材料層の粘着力を増加させることを特徴とする、請求項1に記載のマイクロデバイスのマストランスファー方法。
- ステップ(5)において、前記ベースに対して機械的な圧力を斜め向きに加えて、前記第2の支持部を押して折って、前記マイクロデバイスおよび前記ベースを分離させることを特徴とする、請求項1に記載のマイクロデバイスのマストランスファー方法。
- 前記ベースは、ガラスベース、セラミックスベース、ポリマーベース、シリコーンベース、およびサファイアベースからなる群の内の一種を含むことを特徴とする、請求項1に記載のマイクロデバイスのマストランスファー方法。
- 前記マイクロデバイスのアレイは、ファインピッチ発光ダイオードアレイ、フォトダイオードアレイ、MOSアレイ、およびMEMSアレイからなる群の内の一種を含むことを特徴とする、請求項1に記載のマイクロデバイスのマストランスファー方法。
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KR101799656B1 (ko) * | 2015-12-31 | 2017-11-20 | 한국광기술원 | Led 구조체 및 이의 이송방법 |
JP2016106378A (ja) * | 2016-03-11 | 2016-06-16 | 住友電気工業株式会社 | 超電導線及びその製造方法 |
WO2018082102A1 (en) * | 2016-11-07 | 2018-05-11 | Goertek.Inc | Micro-led transfer method and manufacturing method |
WO2018082100A1 (en) * | 2016-11-07 | 2018-05-11 | Goertek. Inc | Micro-led transfer method and manufacturing method |
CN107978548B (zh) * | 2017-11-20 | 2019-07-05 | 厦门市三安光电科技有限公司 | 微元件的巨量转移方法 |
JP2021513745A (ja) * | 2018-02-08 | 2021-05-27 | コーネル・ユニバーシティーCornell University | 無線の光学的に給電されるオプトエレクトロニクスセンサおよびデバイス |
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