JP6140194B2 - 製品基板をキャリア基板に一時的に接合する方法 - Google Patents
製品基板をキャリア基板に一時的に接合する方法 Download PDFInfo
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- JP6140194B2 JP6140194B2 JP2014556963A JP2014556963A JP6140194B2 JP 6140194 B2 JP6140194 B2 JP 6140194B2 JP 2014556963 A JP2014556963 A JP 2014556963A JP 2014556963 A JP2014556963 A JP 2014556963A JP 6140194 B2 JP6140194 B2 JP 6140194B2
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- 239000000758 substrate Substances 0.000 title claims description 161
- 238000000034 method Methods 0.000 title claims description 20
- 239000010410 layer Substances 0.000 claims description 54
- 230000002093 peripheral effect Effects 0.000 claims description 9
- 238000000926 separation method Methods 0.000 claims description 6
- 230000000181 anti-adherent effect Effects 0.000 claims description 5
- 239000002131 composite material Substances 0.000 claims description 4
- 239000012790 adhesive layer Substances 0.000 claims description 2
- 239000000047 product Substances 0.000 description 69
- 235000012431 wafers Nutrition 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- 238000012545 processing Methods 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002313 adhesive film Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000012876 carrier material Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000012993 chemical processing Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68309—Auxiliary support including alignment aids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Combinations Of Printed Boards (AREA)
Description
1.部分的に高価な材料の材料消費量が高い。
2.テンポラリーボンディングの際に高温が生じ、これにより所要エネルギ量が高くなる。
3.時間のかかる剥離プロセス。特に接合層の化学的分離若しくは溶解の際に、特に湿式の化学的プロセスでは、往々にして手間がかかり、環境破壊的であり、ひいては効率が悪い。さらに化学的溶解では、製品基板の剥離前に接合層が完全に溶解されないことにより、いくつかの個所ではなお付着作用があり、剥離の際にこの個所で製品ウェハの破壊が生じる。
4.剥離後の製品基板のクリーニングが必要である。
2 製品基板
2o 保持面
2s 側方周面
2u 接合面
3 構造
4 抗付着層
4b リング幅
4d 厚さ
5 接合層
5b リング幅
5d 厚さ
6 キャリア基板
6o 製品基板受容面
6s 側方周面
6u 剥離面
7 製品基板・キャリア基板複合体
8 サクション構造
9 製品基板ホルダ
10 収容部
11 支持体
12,12´ キャリアホルダ
13 接合面区分
14 収容室
15 抗付着面区分
16 接触面
16i 内側
H 高さ
Claims (9)
- キャリア基板(6)の製品基板受容面(6o)に、該製品基板受容面(6o)の接合面区分(13)において接合層(5)を設けるステップと、
製品基板(2)の接合面(2u)に、前記接合面区分(13)に少なくとも部分的に面状に対応する前記接合面(2u)の抗付着面区分(15)において、僅かな付着力を有した抗付着層(4)を設け、この際に、前記接合層(5)と前記キャリア基板(6)並びに前記製品基板(2)と前記抗付着層(4)とによって画成される、前記製品基板(2)の前記接合面(2u)に設けられた前記接合面(2u)から突出する構造体(3)を収容するための収容室(14)を形成するステップと、
前記製品基板(2)を前記キャリア基板(6)に対して位置合わせし、前記接合層(5)を前記抗付着層(4)に接触面(16)で接合するステップと、
を有した、製品基板(2)をキャリア基板(6)に一時的に接合する方法。 - 前記接合面区分(13)は、前記キャリア基板(6)の側方周面(6s)に沿って、前記製品基板受容面(6o)に対して同心的な、リング区分に配置されている、請求項1記載の方法。
- 前記抗付着面区分(15)は、前記製品基板(2)の側方周面(2s)に沿って、前記抗付着面区分(15)に対して同心的な、リング区分に配置されている、請求項1又は2記載の方法。
- 前記構造体(3)を、少なくとも部分的に、前記抗付着層(4)によって取り囲む、請求項1から3までのいずれか1項記載の方法。
- 前記キャリア基板(6)の前記製品基板受容面(6o)とは反対側の剥離面(6u)に、少なくとも主に中央から、又は少なくとも主に側方から作用する引張力を、前記キャリア基板(6)に負荷することにより、前記キャリア基板(6)から前記製品基板(2)を剥離する、請求項1から4までのいずれか1項記載の方法。
- 前記剥離面(6u)を全面的に吸い付ける柔軟なキャリアホルダ(12,12´)によって前記引張力を付与する、請求項5記載の方法。
- 前記剥離を、前記接触面(16)の、前記収容室(14)に面した内側(16i)から同心的に行う、請求項5又は6記載の方法。
- 少なくとも主に側方の前記剥離を開始する際に、機械的な分離手段によって剥離を開始する、請求項5記載の方法。
- 製品基板・キャリア基板複合体(7)であって、
キャリア基板(6)の製品基板受容面(6o)に、該製品基板受容面(6o)の接合面区分(13)において設けられた接合層(5)を有したキャリア基板(6)と、
接合層(5)と、製品基板(2)の接合面(2u)に、前記接合面区分(13)に少なくとも部分的に面状に対応する前記接合面(2u)の抗付着面区分(15)において設けられた抗付着層(4)との間の接触面(16)に沿って前記キャリア基板(6)に接合された製品基板(2)とを備えており、前記接合層(5)と前記キャリア基板(6)並びに前記製品基板(2)と前記抗付着層(4)とによって画成された収容室(14)に、前記製品基板(2)の前記接合面(2u)に設けられた、前記接合面(2u)から突出する構造体(3)が収容されている、製品基板・キャリア基板複合体。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102012101237A DE102012101237A1 (de) | 2012-02-16 | 2012-02-16 | Verfahren zum temporären Verbinden eines Produktsubstrats mit einem Trägersubstrat |
DE102012101237.7 | 2012-02-16 | ||
PCT/EP2013/050849 WO2013120648A1 (de) | 2012-02-16 | 2013-01-17 | Verfahren zum temporären verbinden eines produktsubstrats mit einem trägersubstrat |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015507373A JP2015507373A (ja) | 2015-03-05 |
JP6140194B2 true JP6140194B2 (ja) | 2017-05-31 |
Family
ID=47594741
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014556963A Active JP6140194B2 (ja) | 2012-02-16 | 2013-01-17 | 製品基板をキャリア基板に一時的に接合する方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US9390956B2 (ja) |
JP (1) | JP6140194B2 (ja) |
KR (1) | KR102061369B1 (ja) |
CN (1) | CN104115267B (ja) |
AT (1) | AT517748B1 (ja) |
DE (2) | DE102012101237A1 (ja) |
SG (1) | SG11201404960TA (ja) |
WO (1) | WO2013120648A1 (ja) |
Families Citing this family (10)
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KR101502239B1 (ko) * | 2013-11-29 | 2015-03-19 | 엘지디스플레이 주식회사 | 기판분리장치 |
US10978334B2 (en) * | 2014-09-02 | 2021-04-13 | Applied Materials, Inc. | Sealing structure for workpiece to substrate bonding in a processing chamber |
CN104916574B (zh) * | 2015-04-22 | 2017-11-10 | 四川虹视显示技术有限公司 | 一种柔性oled脱膜装置 |
TWI557831B (zh) * | 2015-05-15 | 2016-11-11 | 友達光電股份有限公司 | 微組件的傳送方法 |
DE102015118742A1 (de) * | 2015-11-02 | 2017-05-04 | Ev Group E. Thallner Gmbh | Verfahren zum Bonden und Lösen von Substraten |
DE102016106351A1 (de) | 2016-04-07 | 2017-10-12 | Ev Group E. Thallner Gmbh | Verfahren und Vorrichtung zum Bonden zweier Substrate |
CN111048461B (zh) * | 2018-10-12 | 2022-06-03 | 瀚宇彩晶股份有限公司 | 电子装置的离型前结构及电子装置的制造方法 |
WO2020178080A1 (en) * | 2019-03-05 | 2020-09-10 | Evatec Ag | Method for processing fragile substrates employing temporary bonding of the substrates to carriers |
KR20220097867A (ko) * | 2019-11-08 | 2022-07-08 | 에베 그룹 에. 탈너 게엠베하 | 기판 결합 장치 및 방법 |
FR3113771B1 (fr) * | 2020-08-27 | 2022-10-21 | Commissariat Energie Atomique | Procédé de fabrication d'un substrat-poignée destiné au collage temporaire d'un substrat. |
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JPH0828580B2 (ja) * | 1993-04-21 | 1996-03-21 | 日本電気株式会社 | 配線基板構造及びその製造方法 |
DE4339604C2 (de) | 1993-11-20 | 1996-06-05 | Beiersdorf Ag | Verwendung eines Klebfolien-Abschnitts für eine wiederablösbare Verklebung |
KR0165467B1 (ko) | 1995-10-31 | 1999-02-01 | 김광호 | 웨이퍼 디본더 및 이를 이용한 웨이퍼 디본딩법 |
JP2001196404A (ja) * | 2000-01-11 | 2001-07-19 | Fujitsu Ltd | 半導体装置及びその製造方法 |
DE10140827B4 (de) | 2001-08-21 | 2004-07-29 | Infineon Technologies Ag | Vorrichtung zum Debonden von Dünnwafern |
EP1568071B1 (de) * | 2002-11-29 | 2019-03-20 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Wafer mit trennschicht und trägerschicht und dessen herstellungsverfahren |
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DE102006000687B4 (de) * | 2006-01-03 | 2010-09-09 | Thallner, Erich, Dipl.-Ing. | Kombination aus einem Träger und einem Wafer, Vorrichtung zum Trennen der Kombination und Verfahren zur Handhabung eines Trägers und eines Wafers |
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US8852391B2 (en) * | 2010-06-21 | 2014-10-07 | Brewer Science Inc. | Method and apparatus for removing a reversibly mounted device wafer from a carrier substrate |
-
2012
- 2012-02-16 DE DE102012101237A patent/DE102012101237A1/de not_active Withdrawn
-
2013
- 2013-01-17 AT ATA9032/2013A patent/AT517748B1/de active
- 2013-01-17 CN CN201380009852.0A patent/CN104115267B/zh active Active
- 2013-01-17 US US14/376,460 patent/US9390956B2/en active Active
- 2013-01-17 DE DE112013000980.3T patent/DE112013000980B4/de active Active
- 2013-01-17 JP JP2014556963A patent/JP6140194B2/ja active Active
- 2013-01-17 WO PCT/EP2013/050849 patent/WO2013120648A1/de active Application Filing
- 2013-01-17 SG SG11201404960TA patent/SG11201404960TA/en unknown
- 2013-01-17 KR KR1020147021338A patent/KR102061369B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
AT517748A5 (de) | 2017-04-15 |
US20140374144A1 (en) | 2014-12-25 |
KR102061369B1 (ko) | 2020-02-11 |
CN104115267A (zh) | 2014-10-22 |
DE102012101237A1 (de) | 2013-08-22 |
US9390956B2 (en) | 2016-07-12 |
CN104115267B (zh) | 2017-08-25 |
WO2013120648A1 (de) | 2013-08-22 |
AT517748B1 (de) | 2023-05-15 |
JP2015507373A (ja) | 2015-03-05 |
DE112013000980A5 (de) | 2014-11-27 |
SG11201404960TA (en) | 2014-11-27 |
KR20140128976A (ko) | 2014-11-06 |
DE112013000980B4 (de) | 2020-09-24 |
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