JP2015507373A - 製品基板をキャリア基板に一時的に接合する方法 - Google Patents
製品基板をキャリア基板に一時的に接合する方法 Download PDFInfo
- Publication number
- JP2015507373A JP2015507373A JP2014556963A JP2014556963A JP2015507373A JP 2015507373 A JP2015507373 A JP 2015507373A JP 2014556963 A JP2014556963 A JP 2014556963A JP 2014556963 A JP2014556963 A JP 2014556963A JP 2015507373 A JP2015507373 A JP 2015507373A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- product substrate
- bonding
- product
- carrier substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68309—Auxiliary support including alignment aids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
Abstract
Description
1.部分的に高価な材料の材料消費量が高い。
2.テンポラリーボンディングの際に高温が生じ、これにより所要エネルギ量が高くなる。
3.時間のかかる剥離プロセス。特に接合層の化学的分離若しくは溶解の際に、特に湿式の化学的プロセスでは、往々にして手間がかかり、環境破壊的であり、ひいては効率が悪い。さらに化学的溶解では、製品基板の剥離前に接合層が完全に溶解されないことにより、いくつかの個所ではなお付着作用があり、剥離の際にこの個所で製品ウェハの破壊が生じる。
4.剥離後の製品基板のクリーニングが必要である。
2 製品基板
2o 保持面
2s 側方周面
2u 接合面
3 構造
4 抗付着層
4b リング幅
4d 厚さ
5 接合層
5b リング幅
5d 厚さ
6 キャリア基板
6o 製品基板受容面
6s 側方周面
6u 剥離面
7 製品基板・キャリア基板複合体
8 サクション構造
9 製品基板ホルダ
10 収容部
11 支持体
12,12´ キャリアホルダ
13 接合面区分
14 収容室
15 抗付着面区分
16 接触面
16i 内側
H 高さ
Claims (9)
- キャリア基板(6)の製品基板受容面(6o)に、該製品基板受容面(6o)の接合面区分(13)において接合層(5)を設けるステップと、
製品基板(2)の接合面(2u)に、前記接合面区分(13)に少なくとも部分的に、特に少なくともほぼ、好適にはほぼ完全に面状に対応する前記接合面(2u)の抗付着面区分(15)において、僅かな付着力を有した抗付着層(4)を設け、この際に、前記接合層(5)と前記キャリア基板(6)並びに前記製品基板(2)と前記抗付着層(4)とによって画成される、前記製品基板(2)の前記接合面(2u)に設けられた前記接合面(2u)から突出する構造体(3)を収容するための収容室(14)を形成するステップと、
前記製品基板(2)を前記キャリア基板(6)に対して位置合わせし、前記接合面(5)を前記抗付着層(4)に接触面(16)で接合するステップと、
を有した、製品基板(2)をキャリア基板(6)に一時的に接合する方法。 - 前記接合面区分(13)は、前記キャリア基板(6)の側方周面(6s)に沿って、特に、好適には前記製品基板受容面(6o)に対して同心的な、リング区分に配置されている、請求項1記載の方法。
- 前記抗付着面区分(15)は、前記製品基板(2)の側方周面(2s)に沿って、特に、好適には前記抗付着面区分(15)に対して同心的な、リング区分に配置されている、請求項1又は2記載の方法。
- 前記構造体(3)を、少なくとも部分的に、好適には完全に、前記抗付着層(4)によって取り囲む、請求項1から3までのいずれか1項記載の方法。
- 前記キャリア基板(6)の前記製品基板受容面(6o)とは反対側の剥離面(6u)に、少なくとも主に中央から、又は少なくとも主に側方から作用する引張力を、前記キャリア基板(6)に負荷することにより、前記キャリア基板(6)から前記製品基板(2)を剥離する、請求項1から4までのいずれか1項記載の方法。
- 前記剥離面(6u)を、特に全面的に吸い付ける、好適には柔軟なキャリアホルダ(12,12´)によって前記引張力を付与する、請求項5記載の方法。
- 前記剥離を、前記接触面(16)の、前記収容室(14)に面した内側(16i)から同心的に行う、請求項5又は6記載の方法。
- 少なくとも主に側方の前記剥離を開始する際に、機械的な分離手段によって剥離を開始する、請求項5記載の方法。
- 製品基板・キャリア基板複合体(7)であって、
キャリア基板(6)の製品基板受容面(6o)に、該製品基板受容面(6o)の接合面区分(13)において設けられた接合層(5)を有したキャリア基板(6)と、
接合層(5)と、製品基板(2)の接合面(2u)に、前記接合面区分(13)に少なくとも部分的に面状に対応する前記接合面(2u)の抗付着面区分(15)において設けられた抗付着層(4)との間の接触面(16)に沿って前記キャリア基板(6)に接合された製品基板(2)とを備えており、前記接合層(5)と前記キャリア基板(6)並びに前記製品基板(2)と前記抗付着層(4)とによって画成された収容室(14)に、前記製品基板(2)の前記接合面(2u)に設けられた、前記接合面(2u)から突出する構造体(3)が収容されている、製品基板・キャリア基板複合体。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102012101237.7 | 2012-02-16 | ||
DE102012101237A DE102012101237A1 (de) | 2012-02-16 | 2012-02-16 | Verfahren zum temporären Verbinden eines Produktsubstrats mit einem Trägersubstrat |
PCT/EP2013/050849 WO2013120648A1 (de) | 2012-02-16 | 2013-01-17 | Verfahren zum temporären verbinden eines produktsubstrats mit einem trägersubstrat |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015507373A true JP2015507373A (ja) | 2015-03-05 |
JP6140194B2 JP6140194B2 (ja) | 2017-05-31 |
Family
ID=47594741
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014556963A Active JP6140194B2 (ja) | 2012-02-16 | 2013-01-17 | 製品基板をキャリア基板に一時的に接合する方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US9390956B2 (ja) |
JP (1) | JP6140194B2 (ja) |
KR (1) | KR102061369B1 (ja) |
CN (1) | CN104115267B (ja) |
AT (1) | AT517748B1 (ja) |
DE (2) | DE102012101237A1 (ja) |
SG (1) | SG11201404960TA (ja) |
WO (1) | WO2013120648A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019514199A (ja) * | 2016-04-07 | 2019-05-30 | エーファウ・グループ・エー・タルナー・ゲーエムベーハー | 2枚の基板を接合する方法および装置 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101502239B1 (ko) * | 2013-11-29 | 2015-03-19 | 엘지디스플레이 주식회사 | 기판분리장치 |
US10978334B2 (en) * | 2014-09-02 | 2021-04-13 | Applied Materials, Inc. | Sealing structure for workpiece to substrate bonding in a processing chamber |
CN104916574B (zh) * | 2015-04-22 | 2017-11-10 | 四川虹视显示技术有限公司 | 一种柔性oled脱膜装置 |
TWI557831B (zh) * | 2015-05-15 | 2016-11-11 | 友達光電股份有限公司 | 微組件的傳送方法 |
DE102015118742A1 (de) * | 2015-11-02 | 2017-05-04 | Ev Group E. Thallner Gmbh | Verfahren zum Bonden und Lösen von Substraten |
CN111048461B (zh) * | 2018-10-12 | 2022-06-03 | 瀚宇彩晶股份有限公司 | 电子装置的离型前结构及电子装置的制造方法 |
WO2020178080A1 (en) * | 2019-03-05 | 2020-09-10 | Evatec Ag | Method for processing fragile substrates employing temporary bonding of the substrates to carriers |
FR3113771B1 (fr) * | 2020-08-27 | 2022-10-21 | Commissariat Energie Atomique | Procédé de fabrication d'un substrat-poignée destiné au collage temporaire d'un substrat. |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005123382A (ja) * | 2003-10-16 | 2005-05-12 | Lintec Corp | 表面保護用シートおよび半導体ウエハの研削方法 |
JP2006086479A (ja) * | 2004-09-17 | 2006-03-30 | Toshiba Corp | 薄膜基板の保持方法及び半導体装置の製造方法 |
JP2010074115A (ja) * | 2008-08-21 | 2010-04-02 | Tokyo Seimitsu Co Ltd | ワーク分離方法及び切削加工装置 |
JP2010283097A (ja) * | 2009-06-04 | 2010-12-16 | Lintec Corp | 両面接着シート |
JP2012004522A (ja) * | 2010-06-21 | 2012-01-05 | Brewer Science Inc | 逆に装着されたデバイスウェーハーをキャリヤー基板から分離する方法および装置 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0828580B2 (ja) * | 1993-04-21 | 1996-03-21 | 日本電気株式会社 | 配線基板構造及びその製造方法 |
DE4339604C2 (de) | 1993-11-20 | 1996-06-05 | Beiersdorf Ag | Verwendung eines Klebfolien-Abschnitts für eine wiederablösbare Verklebung |
KR0165467B1 (ko) | 1995-10-31 | 1999-02-01 | 김광호 | 웨이퍼 디본더 및 이를 이용한 웨이퍼 디본딩법 |
JP2001196404A (ja) | 2000-01-11 | 2001-07-19 | Fujitsu Ltd | 半導体装置及びその製造方法 |
DE10140827B4 (de) | 2001-08-21 | 2004-07-29 | Infineon Technologies Ag | Vorrichtung zum Debonden von Dünnwafern |
KR101180497B1 (ko) | 2002-11-29 | 2012-09-06 | 안드레아스 야콥 | 중간층 및 지지층을 갖는 웨이퍼 및 웨이퍼를 처리하기위한 방법 및 장치 |
JP2004288725A (ja) * | 2003-03-19 | 2004-10-14 | Citizen Watch Co Ltd | 半導体装置の製造方法,この製造方法に用いるシール部材及びこのシール部材の供給装置 |
DE102006000687B4 (de) * | 2006-01-03 | 2010-09-09 | Thallner, Erich, Dipl.-Ing. | Kombination aus einem Träger und einem Wafer, Vorrichtung zum Trennen der Kombination und Verfahren zur Handhabung eines Trägers und eines Wafers |
GB0602410D0 (en) | 2006-02-07 | 2006-03-15 | Filtronic Compound Semiconduct | A method of bonding a semiconductor wafer to a support substrate |
JP2007214271A (ja) | 2006-02-08 | 2007-08-23 | Zycube:Kk | 基板の接合方法および半導体装置 |
JP5335443B2 (ja) * | 2006-03-01 | 2013-11-06 | シン マテリアルズ アクチェンゲゼルシャフト | ウエハ支持構造体及び該ウエハ支持構造体の製造に用いられる層システム |
JP2006332686A (ja) * | 2006-07-03 | 2006-12-07 | Matsushita Electric Ind Co Ltd | 固体撮像装置 |
US20090017248A1 (en) | 2007-07-13 | 2009-01-15 | 3M Innovative Properties Company | Layered body and method for manufacturing thin substrate using the layered body |
US7975378B1 (en) * | 2010-01-06 | 2011-07-12 | Banpil Photonics, Inc. | Method of manufacturing high speed printed circuit board interconnects |
US7883991B1 (en) | 2010-02-18 | 2011-02-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Temporary carrier bonding and detaching processes |
-
2012
- 2012-02-16 DE DE102012101237A patent/DE102012101237A1/de not_active Withdrawn
-
2013
- 2013-01-17 US US14/376,460 patent/US9390956B2/en active Active
- 2013-01-17 KR KR1020147021338A patent/KR102061369B1/ko active IP Right Grant
- 2013-01-17 WO PCT/EP2013/050849 patent/WO2013120648A1/de active Application Filing
- 2013-01-17 SG SG11201404960TA patent/SG11201404960TA/en unknown
- 2013-01-17 JP JP2014556963A patent/JP6140194B2/ja active Active
- 2013-01-17 CN CN201380009852.0A patent/CN104115267B/zh active Active
- 2013-01-17 DE DE112013000980.3T patent/DE112013000980B4/de active Active
- 2013-01-17 AT ATA9032/2013A patent/AT517748B1/de active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005123382A (ja) * | 2003-10-16 | 2005-05-12 | Lintec Corp | 表面保護用シートおよび半導体ウエハの研削方法 |
JP2006086479A (ja) * | 2004-09-17 | 2006-03-30 | Toshiba Corp | 薄膜基板の保持方法及び半導体装置の製造方法 |
JP2010074115A (ja) * | 2008-08-21 | 2010-04-02 | Tokyo Seimitsu Co Ltd | ワーク分離方法及び切削加工装置 |
JP2010283097A (ja) * | 2009-06-04 | 2010-12-16 | Lintec Corp | 両面接着シート |
JP2012004522A (ja) * | 2010-06-21 | 2012-01-05 | Brewer Science Inc | 逆に装着されたデバイスウェーハーをキャリヤー基板から分離する方法および装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019514199A (ja) * | 2016-04-07 | 2019-05-30 | エーファウ・グループ・エー・タルナー・ゲーエムベーハー | 2枚の基板を接合する方法および装置 |
Also Published As
Publication number | Publication date |
---|---|
CN104115267B (zh) | 2017-08-25 |
US9390956B2 (en) | 2016-07-12 |
WO2013120648A1 (de) | 2013-08-22 |
DE102012101237A1 (de) | 2013-08-22 |
JP6140194B2 (ja) | 2017-05-31 |
US20140374144A1 (en) | 2014-12-25 |
DE112013000980B4 (de) | 2020-09-24 |
KR20140128976A (ko) | 2014-11-06 |
KR102061369B1 (ko) | 2020-02-11 |
AT517748B1 (de) | 2023-05-15 |
AT517748A5 (de) | 2017-04-15 |
SG11201404960TA (en) | 2014-11-27 |
DE112013000980A5 (de) | 2014-11-27 |
CN104115267A (zh) | 2014-10-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6140194B2 (ja) | 製品基板をキャリア基板に一時的に接合する方法 | |
US9457552B2 (en) | Method for detaching a product substrate off a carrier substrate | |
US9186877B2 (en) | Method for stripping a product substrate from a carrier substrate | |
TWI491469B (zh) | The treatment of brittle parts | |
TWI438086B (zh) | A resin laminate, an adhesive sheet, a processing method using the adhesive sheet, and a peeling device | |
US9064686B2 (en) | Method and apparatus for temporary bonding of ultra thin wafers | |
US8574398B2 (en) | Apparatus and method for detaping an adhesive layer from the surface of ultra thin wafers | |
JP2009043995A (ja) | ワーク搬送方法及びワーク受渡し機構を有する装置 | |
JP2003338478A (ja) | 脆質材料の剥離方法及びこれに用いる硬質板並びに剥離装置 | |
JP6698337B2 (ja) | 半導体ウェハの保持方法及び半導体デバイスの製造方法 | |
JP2004063678A (ja) | 脆質部材からの表面保護テープの剥離方法 | |
JP2003318135A (ja) | 半導体装置の製造方法 | |
JP2009187969A (ja) | 基板の加工方法 | |
JP2013165294A (ja) | ワーク受渡し機構を有する装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20151021 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20161124 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20161205 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170222 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20170410 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20170428 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6140194 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |