JP6698337B2 - 半導体ウェハの保持方法及び半導体デバイスの製造方法 - Google Patents
半導体ウェハの保持方法及び半導体デバイスの製造方法 Download PDFInfo
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
- H01L21/566—Release layers for moulds, e.g. release layers, layers against residue during moulding
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
- H01L21/67265—Position monitoring, e.g. misposition detection or presence detection of substrates stored in a container, a magazine, a carrier, a boat or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67346—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders characterized by being specially adapted for supporting a single substrate or by comprising a stack of such individual supports
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67712—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
- H01L2021/60007—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process
- H01L2021/60022—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process using bump connectors, e.g. for flip chip mounting
- H01L2021/60045—Pre-treatment step of the bump connectors prior to bonding
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
Description
例えば特許文献1には、半導体ウェハと支持基板とを粘着剤を介して接着して、搬送及び加工することが記載されている。
例えば特許文献2には、半導体ウェハをベース基材に吸着把持することが記載されている。
粘着剤を半導体ウェハから剥離し、支持基板から切り離す方法としては、熱による剥離法、レーザーを用いた剥離法、薬液で溶解する剥離法、化学的な剥離法等が知られている。しかしながら、いずれの方法においても粘着剤の剥離時にバンプが欠落することがある。また支持基板は再使用して用いることが求められているが、支持基板側に残存した粘着剤を完全に除去するための洗浄工程等には時間もコストもかかる。
半導体ウェハの裏面を薄化するためには、バンプが形成された面を支持基板に吸着させる必要がある。すなわち、バンプによる凹凸と吸着する支持基板との間に隙間が生じてしまい、十分な保持力を維持することが難しい。また、その隙間にパーティクル等が侵入し、半導体ウェハを汚染するおそれがある。
本発明は、上記課題を解決するため、以下の手段を提供する。
以下の説明において例示される材料、寸法等は一例であって、本発明はそれらに限定されるものではなく、その要旨を変更しない範囲で適宜変更して実施することが可能である。
本発明の一態様に係る半導体ウェハの保持方法は、バンプを有する半導体ウェハのバンプが形成された面に、バンプを埋めるように硬化性樹脂を塗付する塗布工程と、硬化性樹脂を硬化する硬化工程と、硬化した硬化性樹脂の半導体ウェハと反対側の面に支持基板を吸着する吸着工程と、を有する。
塗布工程では、バンプ2が形成された半導体ウェハ1の一面1aに硬化性樹脂3を塗布する。図2は、硬化性樹脂が塗布された半導体ウェハの断面模式図である。半導体ウェハ1の一面1aは、バンプ2が形成された面である。
次いで、塗布した硬化性樹脂3を硬化させて硬化性樹脂層4を形成する。図3は、硬化性樹脂を硬化した後の半導体ウェハの断面模式図である。硬化性樹脂層4は、後述するが半導体デバイスの製造方法における封止層にもなる。
硬化性樹脂3を硬化する手段は、用いる材料種に応じて公知の方法を用いることができる。
吸着工程では、硬化性樹脂層4の半導体ウェハと反対側の面に支持基板5を吸着する。図4は、支持基板を吸着した半導体ウェハの断面模式図である。
次いで、半導体ウェハの製造方法について説明する。半導体ウェハの製造方法は、上記の半導体の保持方法を用いて半導体ウェハを保持する工程と、保持された前記半導体ウェハの前記支持基板が吸着していない面を薄化する工程と、を有する。
薄化処理を行うことで、半導体ウェハ1の厚みは、5μm〜100μm程度まで薄くすることができる。
従来の半導体ウェハの製造方法では、まず図6(a)に示すように、支持基板付ウェハ20の支持基板5と反対側の面を薄化する。支持基板付ウェハ20は、バンプ2が形成された半導体ウェハ1と、バンプを埋めるように設けられた接着層14と、接着層14と接着する支持基材5とを有する。半導体ウェハ1と支持基材5とを接着する層が、接着層14である点が、上述の支持基板付ウェハ10と異なる。以下、上述の支持基板付ウェハ10と同一のものからなるものについては、同一の符号を用い、詳細な説明を省略する。
Claims (8)
- バンプを有する半導体ウェハのバンプが形成された面に、前記バンプを埋めるようにデバイスの封止材である硬化性樹脂を塗付する塗布工程と、
前記硬化性樹脂を硬化する硬化工程と、
硬化した前記硬化性樹脂の前記半導体ウェハと反対側の面に支持基板を吸着する吸着工程と、を有する半導体ウェハの保持方法。 - 前記硬化性樹脂が、熱硬化性樹脂である請求項1に記載の半導体ウェハの保持方法。
- 前記硬化工程において、前記硬化性樹脂をBステージ状態に硬化する請求項1又は2のいずれかに記載の半導体ウェハの保持方法。
- 前記吸着工程において、前記支持基板を静電吸着により吸着する請求項1〜3のいずれか一項に記載の半導体ウェハの保持方法。
- 前記塗布工程において、前記硬化性樹脂をスプレーコートする請求項1〜4のいずれか一項に記載の半導体ウェハの保持方法。
- 前記支持基板の吸着面の外周部が中央部に対して盛り上がっている請求項1〜5のいずれか一項に記載の半導体ウェハの保持方法。
- 前記塗布工程又は前記硬化工程において、前記硬化性樹脂から前記バンプの表面の一部を露出させる、請求項1〜6のいずれか一項に記載の半導体ウェハの保持方法。
- 請求項1〜7に記載された半導体ウェハの保持方法を用いて半導体ウェハを保持する工程と、
保持された前記半導体ウェハの前記支持基板が吸着していない面を薄化する工程と、を有する半導体デバイスの製造方法。
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KR1020160073962A KR102615699B1 (ko) | 2015-12-24 | 2016-06-14 | 반도체 웨이퍼의 보유 방법 및 반도체 장치의 제조 방법 |
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