JP6934327B2 - ウエーハの分割方法及び分割装置 - Google Patents
ウエーハの分割方法及び分割装置 Download PDFInfo
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- JP6934327B2 JP6934327B2 JP2017112265A JP2017112265A JP6934327B2 JP 6934327 B2 JP6934327 B2 JP 6934327B2 JP 2017112265 A JP2017112265 A JP 2017112265A JP 2017112265 A JP2017112265 A JP 2017112265A JP 6934327 B2 JP6934327 B2 JP 6934327B2
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
- H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
Description
10 テーブル
13 保持面
20 リングフレーム保持部
26 昇降手段
32 ヒータ
40 制御手段
40a 第1の制御部
40b 第2の制御部
51 改質層(分割起点)
C チップ
F リングフレーム
S 隙間
T テープ
W ウエーハ
WS ワークセット
Claims (2)
- リングフレームの開口部を塞いで熱収縮性を有するテープを貼着し該開口部の該テープに分割予定ラインに沿って分割起点を形成したウエーハを貼着したワークセットの該テープを介してウエーハを吸引保持するテーブルと、該ワークセットの該リングフレームを保持するリングフレーム保持部と、該テーブルと該リングフレーム保持部とを相対的に接近および離間する方向に上下移動させる昇降手段と、該ワークセットのウエーハの外周と該リングフレームの内周との間のリング状の該テープを加熱するヒータと、を備え、該リングフレーム保持部で該ワークセットを保持した状態で、該昇降手段で該テーブルを上昇方向に該リングフレーム保持部を下降方向に相対的に離間する方向に移動させて該開口部の該テープを引き伸ばし該分割起点でウエーハを分割させチップにする分割装置を用いたウエーハの分割方法であって、
該リングフレーム保持部で該ワークセットを保持する保持工程と、
該保持工程の後、該昇降手段で該テーブルと該リングフレーム保持部とを離間する方向に移動させ該テープを引き伸ばし該分割起点でウエーハを分割し、隣接するチップとチップとの間に所定の隙間を形成する分割工程と、
該分割工程の後、引き伸ばされた該テープのウエーハが貼着されたエリアを該テーブルで吸引保持するテープ保持工程と、
該テープ保持工程の後、該テーブルと該リングフレーム保持部とをさらに離間する方向に移動させウエーハの外周とリングフレームの内周との間のリング状の該テープを引き伸ばすリングテープ拡張工程と、
該リングテープ拡張工程の後、該昇降手段で該テーブルと該リングフレーム保持部とを接近する方向に移動させ該リング状のテープを弛ませると共に該ヒータで該リング状のテープを加熱し熱収縮させ隣接するチップとチップとの間の該所定の隙間を維持してワークセットを固定させる固定工程と、を備えるウエーハの分割方法。 - 請求項1記載の分割起点が形成されたウエーハの分割方法を可能にする分割装置であって、
リングフレームの開口部を塞いで熱収縮性を有するテープを貼着し該開口部の該テープに分割予定ラインに沿って分割起点を形成したウエーハを貼着したワークセットの該テープを介してウエーハを吸引保持するテーブルと、該ワークセットの該リングフレームを保持するリングフレーム保持部と、該テーブルと該リングフレーム保持部とを相対的に接近および離間する方向に上下移動させる昇降手段と、該ワークセットのウエーハの外周と該リングフレームの内周との間のリング状の該テープを加熱するヒータと、該昇降手段を制御する制御手段とを備え、
該制御手段は、
該分割工程を実施するために該テーブルと該リングフレーム保持部とを相対的に離間する方向に移動させ第1の間隔を形成して該テープを引き伸ばす第1の制御部と、
該リングテープ拡張工程を実施するために該テーブルと該リングフレーム保持部とを相対的に該第1の間隔よりさらに離間させる方向に移動させ第2の間隔を形成し該リング状のテープを引き伸ばす第2の制御部と、を備える分割装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017112265A JP6934327B2 (ja) | 2017-06-07 | 2017-06-07 | ウエーハの分割方法及び分割装置 |
TW107114469A TWI748092B (zh) | 2017-06-07 | 2018-04-27 | 晶圓的分割方法及分割裝置 |
KR1020180057209A KR102448225B1 (ko) | 2017-06-07 | 2018-05-18 | 웨이퍼의 분할 방법 및 분할 장치 |
CN201810531146.7A CN109003897B (zh) | 2017-06-07 | 2018-05-29 | 晶片的分割方法和分割装置 |
US15/996,902 US10559487B2 (en) | 2017-06-07 | 2018-06-04 | Wafer dividing method and dividing apparatus |
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JP2017112265A JP6934327B2 (ja) | 2017-06-07 | 2017-06-07 | ウエーハの分割方法及び分割装置 |
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JP2018207003A JP2018207003A (ja) | 2018-12-27 |
JP6934327B2 true JP6934327B2 (ja) | 2021-09-15 |
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JP (1) | JP6934327B2 (ja) |
KR (1) | KR102448225B1 (ja) |
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Families Citing this family (6)
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JP6901909B2 (ja) * | 2017-06-05 | 2021-07-14 | 株式会社ディスコ | エキスパンド方法及びエキスパンド装置 |
JP7313219B2 (ja) * | 2019-07-22 | 2023-07-24 | 株式会社ディスコ | エキスパンド方法及びエキスパンド装置 |
JP7386649B2 (ja) | 2019-08-29 | 2023-11-27 | 株式会社ディスコ | テープ拡張装置 |
JP7321883B2 (ja) | 2019-10-18 | 2023-08-07 | 株式会社ディスコ | シートの拡張方法 |
TWI727860B (zh) * | 2020-07-22 | 2021-05-11 | 環球晶圓股份有限公司 | 晶圓橫向撞擊測試裝置及晶圓強度測試方法 |
TWI821679B (zh) * | 2020-08-25 | 2023-11-11 | 南韓商杰宜斯科技有限公司 | 基板處理裝置及基板處理方法 |
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JP4647830B2 (ja) | 2001-05-10 | 2011-03-09 | 株式会社ディスコ | 被加工物の分割処理方法および分割処理方法に用いるチップ間隔拡張装置 |
JP4288392B2 (ja) * | 2003-09-29 | 2009-07-01 | 株式会社東京精密 | エキスパンド方法 |
EP1575081A1 (en) * | 2002-10-28 | 2005-09-14 | Tokyo Seimitsu Co.,Ltd. | Expansion method and device |
JP2005129607A (ja) | 2003-10-22 | 2005-05-19 | Disco Abrasive Syst Ltd | ウエーハの分割方法 |
JP2006054246A (ja) * | 2004-08-10 | 2006-02-23 | Disco Abrasive Syst Ltd | ウエーハの分離方法 |
JP2006114691A (ja) * | 2004-10-14 | 2006-04-27 | Disco Abrasive Syst Ltd | ウエーハの分割方法 |
US7858902B2 (en) * | 2007-02-13 | 2010-12-28 | Disco Corporation | Wafer dividing method and laser beam processing machine |
JP5354149B2 (ja) * | 2008-04-08 | 2013-11-27 | 株式会社東京精密 | エキスパンド方法 |
JP5378780B2 (ja) * | 2008-12-19 | 2013-12-25 | 株式会社ディスコ | テープ拡張方法およびテープ拡張装置 |
JP5409280B2 (ja) * | 2009-11-09 | 2014-02-05 | 株式会社ディスコ | チップ間隔拡張方法 |
JP5323779B2 (ja) * | 2010-07-26 | 2013-10-23 | 古河電気工業株式会社 | ウエハ加工用テープ |
JP2013191718A (ja) * | 2012-03-14 | 2013-09-26 | Disco Abrasive Syst Ltd | 被加工物の分割装置及び分割方法 |
JP5985245B2 (ja) | 2012-05-15 | 2016-09-06 | 株式会社ディスコ | チップ間隔維持装置 |
JP6017388B2 (ja) * | 2013-09-09 | 2016-11-02 | 株式会社東芝 | 半導体装置の製造方法 |
JP2015204362A (ja) * | 2014-04-14 | 2015-11-16 | 株式会社ディスコ | チップ間隔維持方法 |
JP6266429B2 (ja) * | 2014-05-08 | 2018-01-24 | 株式会社ディスコ | チップ間隔維持装置及びチップ間隔維持方法 |
JP6320198B2 (ja) * | 2014-06-27 | 2018-05-09 | 株式会社ディスコ | テープ拡張装置 |
JP6570942B2 (ja) * | 2015-09-18 | 2019-09-04 | 株式会社ディスコ | 分割装置及びウエーハの分割方法 |
JP6577341B2 (ja) * | 2015-11-13 | 2019-09-18 | 日東電工株式会社 | 積層体および半導体装置の製造方法 |
JP2017107921A (ja) * | 2015-12-07 | 2017-06-15 | 株式会社ディスコ | ウエーハの加工方法 |
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- 2017-06-07 JP JP2017112265A patent/JP6934327B2/ja active Active
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2018
- 2018-04-27 TW TW107114469A patent/TWI748092B/zh active
- 2018-05-18 KR KR1020180057209A patent/KR102448225B1/ko active IP Right Grant
- 2018-05-29 CN CN201810531146.7A patent/CN109003897B/zh active Active
- 2018-06-04 US US15/996,902 patent/US10559487B2/en active Active
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Publication number | Publication date |
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CN109003897A (zh) | 2018-12-14 |
KR102448225B1 (ko) | 2022-09-27 |
KR20180133789A (ko) | 2018-12-17 |
TWI748092B (zh) | 2021-12-01 |
JP2018207003A (ja) | 2018-12-27 |
US10559487B2 (en) | 2020-02-11 |
TW201903866A (zh) | 2019-01-16 |
CN109003897B (zh) | 2023-08-01 |
US20180358256A1 (en) | 2018-12-13 |
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