JP6875588B1 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6875588B1
JP6875588B1 JP2020157444A JP2020157444A JP6875588B1 JP 6875588 B1 JP6875588 B1 JP 6875588B1 JP 2020157444 A JP2020157444 A JP 2020157444A JP 2020157444 A JP2020157444 A JP 2020157444A JP 6875588 B1 JP6875588 B1 JP 6875588B1
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JP
Japan
Prior art keywords
insulating substrate
terminal
conductive layer
conductor
transistor
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Active
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JP2020157444A
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English (en)
Japanese (ja)
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JP2022051135A (ja
Inventor
達志 金田
達志 金田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP2020157444A priority Critical patent/JP6875588B1/ja
Priority to JP2022507278A priority patent/JPWO2021182569A1/ja
Priority to US17/909,428 priority patent/US20230326864A1/en
Priority to PCT/JP2021/009789 priority patent/WO2021182569A1/ja
Priority to JP2021071519A priority patent/JP7543969B2/ja
Priority to JP2022550342A priority patent/JP7619368B2/ja
Priority to CN202180051984.4A priority patent/CN116114052A/zh
Priority to CN202180051986.3A priority patent/CN116097439A/zh
Priority to US18/043,775 priority patent/US20230335413A1/en
Priority to JP2022550341A priority patent/JP7679838B2/ja
Priority to PCT/JP2021/017069 priority patent/WO2022059250A1/ja
Priority to PCT/JP2021/017074 priority patent/WO2022059251A1/ja
Priority to US18/043,782 priority patent/US20240021585A1/en
Application granted granted Critical
Publication of JP6875588B1 publication Critical patent/JP6875588B1/ja
Priority to CN202180051985.9A priority patent/CN116097430A/zh
Priority to US18/043,768 priority patent/US20230335412A1/en
Priority to PCT/JP2021/021824 priority patent/WO2022059272A1/ja
Publication of JP2022051135A publication Critical patent/JP2022051135A/ja
Active legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/10—Arrangements for heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/22—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • H10W40/226—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections characterised by projecting parts, e.g. fins to increase surface area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/501—Inductive arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/401—Package configurations characterised by multiple insulating or insulated package substrates, interposers or RDLs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Inverter Devices (AREA)
  • Wire Bonding (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Power Conversion In General (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
JP2020157444A 2020-03-12 2020-09-18 半導体装置 Active JP6875588B1 (ja)

Priority Applications (16)

Application Number Priority Date Filing Date Title
JP2020157444A JP6875588B1 (ja) 2020-09-18 2020-09-18 半導体装置
JP2022507278A JPWO2021182569A1 (https=) 2020-03-12 2021-03-11
US17/909,428 US20230326864A1 (en) 2020-03-12 2021-03-11 Semiconductor device
PCT/JP2021/009789 WO2021182569A1 (ja) 2020-03-12 2021-03-11 半導体装置
JP2021071519A JP7543969B2 (ja) 2020-09-18 2021-04-21 半導体装置
JP2022550341A JP7679838B2 (ja) 2020-09-18 2021-04-28 半導体装置
CN202180051986.3A CN116097439A (zh) 2020-09-18 2021-04-28 半导体装置
US18/043,775 US20230335413A1 (en) 2020-09-18 2021-04-28 Semiconductor device
JP2022550342A JP7619368B2 (ja) 2020-09-18 2021-04-28 半導体装置
PCT/JP2021/017069 WO2022059250A1 (ja) 2020-09-18 2021-04-28 半導体装置
PCT/JP2021/017074 WO2022059251A1 (ja) 2020-09-18 2021-04-28 半導体装置
US18/043,782 US20240021585A1 (en) 2020-09-18 2021-04-28 Semiconductor device
CN202180051984.4A CN116114052A (zh) 2020-09-18 2021-04-28 半导体装置
CN202180051985.9A CN116097430A (zh) 2020-09-18 2021-06-09 半导体装置
US18/043,768 US20230335412A1 (en) 2020-09-18 2021-06-09 Semiconductor device
PCT/JP2021/021824 WO2022059272A1 (ja) 2020-09-18 2021-06-09 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2020157444A JP6875588B1 (ja) 2020-09-18 2020-09-18 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2021071519A Division JP7543969B2 (ja) 2020-09-18 2021-04-21 半導体装置

Publications (2)

Publication Number Publication Date
JP6875588B1 true JP6875588B1 (ja) 2021-05-26
JP2022051135A JP2022051135A (ja) 2022-03-31

Family

ID=75961560

Family Applications (4)

Application Number Title Priority Date Filing Date
JP2020157444A Active JP6875588B1 (ja) 2020-03-12 2020-09-18 半導体装置
JP2021071519A Active JP7543969B2 (ja) 2020-09-18 2021-04-21 半導体装置
JP2022550342A Active JP7619368B2 (ja) 2020-09-18 2021-04-28 半導体装置
JP2022550341A Active JP7679838B2 (ja) 2020-09-18 2021-04-28 半導体装置

Family Applications After (3)

Application Number Title Priority Date Filing Date
JP2021071519A Active JP7543969B2 (ja) 2020-09-18 2021-04-21 半導体装置
JP2022550342A Active JP7619368B2 (ja) 2020-09-18 2021-04-28 半導体装置
JP2022550341A Active JP7679838B2 (ja) 2020-09-18 2021-04-28 半導体装置

Country Status (4)

Country Link
US (3) US20230335413A1 (https=)
JP (4) JP6875588B1 (https=)
CN (3) CN116097439A (https=)
WO (3) WO2022059251A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2022059250A1 (https=) * 2020-09-18 2022-03-24

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7840254B2 (ja) * 2022-12-02 2026-04-03 三菱電機株式会社 半導体装置
CN117316880A (zh) * 2023-05-31 2023-12-29 中国振华集团永光电子有限公司（国营第八七三厂） 一种igbt模块及其制作工艺
CN117977992B (zh) * 2024-03-28 2025-04-01 广州小鹏汽车科技有限公司 开关电路、功率集成模块及车辆

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JP2004095670A (ja) * 2002-08-29 2004-03-25 Toshiba Corp 半導体装置
JP4560645B2 (ja) * 2005-09-20 2010-10-13 Ｄｏｗａメタルテック株式会社 複数の半導体基板を搭載するための放熱板およびそれを用いた半導体基板接合体
JP4988784B2 (ja) * 2009-03-30 2012-08-01 株式会社日立製作所 パワー半導体装置
WO2011086896A1 (ja) * 2010-01-15 2011-07-21 三菱電機株式会社 電力用半導体モジュール
EP3573096B1 (en) * 2011-06-27 2022-03-16 Rohm Co., Ltd. Semiconductor module
WO2013008424A1 (ja) * 2011-07-11 2013-01-17 三菱電機株式会社 電力用半導体モジュール
JP5893369B2 (ja) * 2011-12-05 2016-03-23 ローム株式会社 半導体装置
CN104303297B (zh) * 2012-05-16 2017-05-17 松下知识产权经营株式会社 电力用半导体模块
US9530703B2 (en) * 2012-12-20 2016-12-27 Mitsubishi Electric Corporation Method for manufacturing silicon carbide semiconductor device
EP4579736A3 (en) * 2013-11-20 2025-12-31 Rohm Co., Ltd. SWITCHING DEVICE AND ELECTRONIC CIRCUIT
DE102014102018B3 (de) * 2014-02-18 2015-02-19 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit niederinduktiv ausgestalteten modulinternen Last- und Hilfsverbindungseinrichtungen
WO2015136603A1 (ja) * 2014-03-10 2015-09-17 株式会社日立製作所 パワー半導体モジュール及びその製造検査方法
WO2017071976A1 (en) * 2015-10-29 2017-05-04 Abb Schweiz Ag Semiconductor module
US9443792B1 (en) * 2015-10-31 2016-09-13 Ixys Corporation Bridging DMB structure for wire bonding in a power semiconductor device module
US11094648B2 (en) * 2017-08-04 2021-08-17 Denka Company Limited Power module
CN108807336A (zh) * 2018-06-06 2018-11-13 臻驱科技（上海）有限公司 一种功率半导体模块衬底及功率半导体模块
JP7116689B2 (ja) * 2019-01-30 2022-08-10 デンカ株式会社 放熱部材およびその製造方法
JP6875588B1 (ja) * 2020-09-18 2021-05-26 住友電気工業株式会社 半導体装置
JP7466483B2 (ja) * 2021-03-17 2024-04-12 三菱電機株式会社 半導体装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2022059250A1 (https=) * 2020-09-18 2022-03-24
WO2022059250A1 (ja) * 2020-09-18 2022-03-24 住友電気工業株式会社 半導体装置
WO2022059272A1 (ja) * 2020-09-18 2022-03-24 住友電気工業株式会社 半導体装置
WO2022059251A1 (ja) * 2020-09-18 2022-03-24 住友電気工業株式会社 半導体装置
JPWO2022059251A1 (https=) * 2020-09-18 2022-03-24
JP7619368B2 (ja) 2020-09-18 2025-01-22 住友電気工業株式会社 半導体装置

Also Published As

Publication number Publication date
JP7543969B2 (ja) 2024-09-03
JP7679838B2 (ja) 2025-05-20
JP2022051135A (ja) 2022-03-31
JPWO2022059250A1 (https=) 2022-03-24
CN116097430A (zh) 2023-05-09
WO2022059250A1 (ja) 2022-03-24
WO2022059272A1 (ja) 2022-03-24
JP7619368B2 (ja) 2025-01-22
US20230335413A1 (en) 2023-10-19
CN116114052A (zh) 2023-05-12
JP2022051499A (ja) 2022-03-31
WO2022059251A1 (ja) 2022-03-24
US20230335412A1 (en) 2023-10-19
US20240021585A1 (en) 2024-01-18
JPWO2022059251A1 (https=) 2022-03-24
CN116097439A (zh) 2023-05-09

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