CN116097439A - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN116097439A
CN116097439A CN202180051986.3A CN202180051986A CN116097439A CN 116097439 A CN116097439 A CN 116097439A CN 202180051986 A CN202180051986 A CN 202180051986A CN 116097439 A CN116097439 A CN 116097439A
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CN
China
Prior art keywords
transistors
conductive layer
terminal
electrode
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180051986.3A
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English (en)
Chinese (zh)
Inventor
金田达志
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of CN116097439A publication Critical patent/CN116097439A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/10—Arrangements for heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/22—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • H10W40/226—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections characterised by projecting parts, e.g. fins to increase surface area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/501—Inductive arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/401—Package configurations characterised by multiple insulating or insulated package substrates, interposers or RDLs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Inverter Devices (AREA)
  • Wire Bonding (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Power Conversion In General (AREA)
CN202180051986.3A 2020-09-18 2021-04-28 半导体装置 Pending CN116097439A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020-157444 2020-09-18
JP2020157444A JP6875588B1 (ja) 2020-09-18 2020-09-18 半導体装置
PCT/JP2021/017069 WO2022059250A1 (ja) 2020-09-18 2021-04-28 半導体装置

Publications (1)

Publication Number Publication Date
CN116097439A true CN116097439A (zh) 2023-05-09

Family

ID=75961560

Family Applications (3)

Application Number Title Priority Date Filing Date
CN202180051986.3A Pending CN116097439A (zh) 2020-09-18 2021-04-28 半导体装置
CN202180051984.4A Pending CN116114052A (zh) 2020-09-18 2021-04-28 半导体装置
CN202180051985.9A Pending CN116097430A (zh) 2020-09-18 2021-06-09 半导体装置

Family Applications After (2)

Application Number Title Priority Date Filing Date
CN202180051984.4A Pending CN116114052A (zh) 2020-09-18 2021-04-28 半导体装置
CN202180051985.9A Pending CN116097430A (zh) 2020-09-18 2021-06-09 半导体装置

Country Status (4)

Country Link
US (3) US20230335413A1 (https=)
JP (4) JP6875588B1 (https=)
CN (3) CN116097439A (https=)
WO (3) WO2022059251A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117316880A (zh) * 2023-05-31 2023-12-29 中国振华集团永光电子有限公司（国营第八七三厂） 一种igbt模块及其制作工艺

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6875588B1 (ja) * 2020-09-18 2021-05-26 住友電気工業株式会社 半導体装置
JP7840254B2 (ja) * 2022-12-02 2026-04-03 三菱電機株式会社 半導体装置
CN117977992B (zh) * 2024-03-28 2025-04-01 广州小鹏汽车科技有限公司 开关电路、功率集成模块及车辆

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004095670A (ja) 2002-08-29 2004-03-25 Toshiba Corp 半導体装置
JP4560645B2 (ja) * 2005-09-20 2010-10-13 Ｄｏｗａメタルテック株式会社 複数の半導体基板を搭載するための放熱板およびそれを用いた半導体基板接合体
JP4988784B2 (ja) 2009-03-30 2012-08-01 株式会社日立製作所 パワー半導体装置
CN109166833B (zh) * 2010-01-15 2022-04-08 三菱电机株式会社 电力用半导体模块
EP2725609B1 (en) * 2011-06-27 2019-11-13 Rohm Co., Ltd. Semiconductor module
CN103650137B (zh) * 2011-07-11 2017-09-29 三菱电机株式会社 功率半导体模块
JP5893369B2 (ja) * 2011-12-05 2016-03-23 ローム株式会社 半導体装置
WO2013171996A1 (ja) * 2012-05-16 2013-11-21 パナソニック株式会社 電力用半導体モジュール
JP5791830B2 (ja) 2012-12-20 2015-10-07 三菱電機株式会社 炭化珪素半導体装置の製造方法
US10263612B2 (en) * 2013-11-20 2019-04-16 Rohm Co., Ltd. Switching device and electronic circuit
DE102014102018B3 (de) * 2014-02-18 2015-02-19 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit niederinduktiv ausgestalteten modulinternen Last- und Hilfsverbindungseinrichtungen
WO2015136603A1 (ja) * 2014-03-10 2015-09-17 株式会社日立製作所 パワー半導体モジュール及びその製造検査方法
JP6466030B2 (ja) * 2015-10-29 2019-02-06 アーベーベー・シュバイツ・アーゲー 半導体モジュール
US9443792B1 (en) * 2015-10-31 2016-09-13 Ixys Corporation Bridging DMB structure for wire bonding in a power semiconductor device module
US11094648B2 (en) 2017-08-04 2021-08-17 Denka Company Limited Power module
CN108807336A (zh) * 2018-06-06 2018-11-13 臻驱科技（上海）有限公司 一种功率半导体模块衬底及功率半导体模块
JP7116689B2 (ja) 2019-01-30 2022-08-10 デンカ株式会社 放熱部材およびその製造方法
JP6875588B1 (ja) * 2020-09-18 2021-05-26 住友電気工業株式会社 半導体装置
JP7466483B2 (ja) * 2021-03-17 2024-04-12 三菱電機株式会社 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117316880A (zh) * 2023-05-31 2023-12-29 中国振华集团永光电子有限公司（国营第八七三厂） 一种igbt模块及其制作工艺

Also Published As

Publication number Publication date
US20240021585A1 (en) 2024-01-18
JPWO2022059251A1 (https=) 2022-03-24
JP2022051135A (ja) 2022-03-31
JP2022051499A (ja) 2022-03-31
JP7619368B2 (ja) 2025-01-22
CN116097430A (zh) 2023-05-09
US20230335412A1 (en) 2023-10-19
WO2022059272A1 (ja) 2022-03-24
WO2022059251A1 (ja) 2022-03-24
CN116114052A (zh) 2023-05-12
WO2022059250A1 (ja) 2022-03-24
US20230335413A1 (en) 2023-10-19
JP6875588B1 (ja) 2021-05-26
JP7543969B2 (ja) 2024-09-03
JP7679838B2 (ja) 2025-05-20
JPWO2022059250A1 (https=) 2022-03-24

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