JP6761900B2 - Vdmos装置およびその製造方法 - Google Patents
Vdmos装置およびその製造方法 Download PDFInfo
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- 239000012212 insulator Substances 0.000 description 5
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 238000001289 rapid thermal chemical vapour deposition Methods 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical class [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
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- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
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Description
201 第1トレンチ領域
202 第2トレンチ領域
203 絶縁層
204 第1ポリシリコン層
205 ゲート酸化物層
206 第2ポリシリコン層
207 層間誘電体層
208 第1コンタクトプラグ
209 第2コンタクトプラグ
210 第3コンタクトプラグ
211 第1金属層
212 第2金属層
213 第3トレンチ領域
Claims (13)
- トレンチを半導体基板に形成することであって、前記トレンチは第1トレンチ領域、第2トレンチ領域、ならびに前記第1トレンチ領域と前記第2トレンチ領域とを連通する第3トレンチ領域を含み、前記第1トレンチ領域の幅は前記第2トレンチ領域および前記第3トレンチ領域の幅より大きいことと、
前記半導体基板上に絶縁層を形成することであって、前記絶縁層は前記第2トレンチ領域および前記第3トレンチ領域を充填するとともに前記第1トレンチ領域の側壁に取り付けられていることと、
前記絶縁層上に第1ポリシリコン層を形成することであって、前記第1ポリシリコン層は前記第1トレンチ領域を充填することと、
前記絶縁層が露出するまで前記第1ポリシリコン層の一部を除去することであって、前記第1トレンチ領域に形成された前記第1ポリシリコン層が深いゲートとして機能する第1電極として機能することと、
前記半導体基板の表面上の前記絶縁層の全てと、前記トレンチ内の前記絶縁層の一部とを除去することと、
前記半導体基板上にゲート酸化物層を形成することと、
前記ゲート酸化物層上に第2ポリシリコン層を形成することであって、前記第2ポリシリコン層は前記トレンチを充填し、前記ゲート酸化物層は前記第1ポリシリコン層と前記第2ポリシリコン層を分離することと、
前記半導体基板の前記表面上および前記第1ポリシリコン層の頂部の前記ゲート酸化物層が露出するまで前記第2ポリシリコン層の一部を除去することであって、前記トレンチ内に形成された前記第2ポリシリコン層が浅いゲートとして機能する第2電極として機能することと
を含む、VDMOS装置を製造する方法。 - 前記トレンチ内の前記絶縁層の除去される厚さは、前記浅いゲートとして機能する前記第2電極の厚さと同じである、請求項1に記載の方法。
- 前記半導体基板上に前記ゲート酸化物層を形成することは、前記トレンチの露出した側壁上および前記第1ポリシリコン層上に前記ゲート酸化物層を形成することを含む、請求項1に記載の方法。
- 前記絶縁層は、堆積または酸化成長工程を用いて形成される、請求項1に記載の方法。
- 前記除去は、ウェットエッチング工程により行われる、請求項1に記載の方法。
- 前記第2ポリシリコン層の前記一部を除去した後に、前記半導体基板上に層間誘電体層を形成することをさらに含む、請求項1に記載の方法。
- 前記第2ポリシリコン層の前記一部を除去した後に、前記半導体基板上にウェル領域およびソース領域を形成することをさらに含む、請求項1に記載の方法。
- 前記層間誘電体層を貫通する第1コンタクトプラグ、第2コンタクトプラグ、および第3コンタクトプラグを形成することをさらに含み、前記第1コンタクトプラグの底部はセル領域のソース領域に電気的に接続され、前記第2コンタクトプラグの底部は前記第1トレンチ領域内の前記第1ポリシリコン層に電気的に接続され、前記第3コンタクトプラグの底部は前記第2トレンチ領域内の前記第2ポリシリコン層に電気的に接続されている、請求項6に記載の方法。
- 前記層間誘電体層上に互いに独立して配置された第1金属層と第2金属層を形成することをさらに含む、請求項8に記載の方法。
- 前記第1コンタクトプラグおよび前記第2コンタクトプラグの頂部は前記第1金属層とそれぞれ電気的に接続され、前記第3コンタクトプラグの頂部は前記第2金属層と電気的に接続されている、請求項9に記載の方法。
- トレンチを有する半導体基板であって、前記トレンチは第1トレンチ領域、第2トレンチ領域、ならびに前記第1トレンチ領域と前記第2トレンチ領域とを接続する第3トレンチ領域を含み、前記第1トレンチ領域の幅は前記第2トレンチ領域および前記第3トレンチ領域の幅より大きい、半導体基板と、
前記第1トレンチ領域であって、第1ポリシリコン層から形成される深いゲートとして機能する第1電極と、第2ポリシリコン層から形成される浅いゲートとして機能する第2電極と、絶縁層と、ゲート酸化物層とが設けられ、前記第1電極の上部は前記第2ポリシリコン層によって包まれ、前記第1電極および第2電極は前記ゲート酸化物層によって分離される、第1トレンチ領域と、
前記第2トレンチ領域であって、前記第2ポリシリコン層、絶縁層、およびゲート酸化物層から形成される浅いゲートとして機能する第2電極が設けられ、前記絶縁層は前記第2電極の下に位置し、前記第2電極は前記ゲート酸化物層によって包まれている、第2トレンチ領域と
を含む、VDMOS装置であって、
深いゲートとして機能する前記第1電極の頂部と、浅いゲートとして機能する前記第2電極の頂部とは同一平面上にある、VDMOS装置。 - 前記半導体基板上の層間誘電体層をさらに含み、前記層間誘電体層には、第1コンタクトプラグ、第2コンタクトプラグ、および第3コンタクトプラグが設けられ、前記第1コンタクトプラグの底部はセル領域のソース領域に電気的に接続され、前記第2コンタクトプラグの底部は前記第1トレンチ領域内の前記第1ポリシリコン層に電気的に接続され、前記第3コンタクトプラグの底部は前記第2トレンチ領域内の前記第2ポリシリコン層に電気的に接続されている、請求項11に記載のVDMOS装置。
- 前記層間誘電体層上に互いに独立して配置された第1金属層と第2金属層をさらに含み、前記第1コンタクトプラグおよび前記第2コンタクトプラグの頂部は前記第1金属層とそれぞれ電気的に接続され、前記第3コンタクトプラグの頂部は前記第2金属層と電気的に接続されている、請求項12に記載のVDMOS装置。
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US11948965B2 (en) * | 2021-04-01 | 2024-04-02 | Omnivision Technologies, Inc. | Uneven-trench pixel cell and fabrication method |
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CN102097378B (zh) * | 2009-12-10 | 2013-12-04 | 力士科技股份有限公司 | 一种沟槽金属氧化物半导体场效应管的制造方法 |
US8558305B2 (en) * | 2009-12-28 | 2013-10-15 | Stmicroelectronics S.R.L. | Method for manufacturing a power device being integrated on a semiconductor substrate, in particular having a field plate vertical structure and corresponding device |
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US8143126B2 (en) * | 2010-05-10 | 2012-03-27 | Freescale Semiconductor, Inc. | Method for forming a vertical MOS transistor |
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JP2014027182A (ja) | 2012-07-27 | 2014-02-06 | Toshiba Corp | 半導体装置 |
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CN103928513B (zh) * | 2013-01-15 | 2017-03-29 | 无锡华润上华半导体有限公司 | 一种沟槽dmos器件及其制作方法 |
CN103236439B (zh) * | 2013-04-22 | 2015-06-17 | 无锡新洁能股份有限公司 | 一种新型结构的vdmos器件及其制造方法 |
US9136368B2 (en) * | 2013-10-03 | 2015-09-15 | Texas Instruments Incorporated | Trench gate trench field plate semi-vertical semi-lateral MOSFET |
WO2015114803A1 (ja) * | 2014-01-31 | 2015-08-06 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US9397213B2 (en) * | 2014-08-29 | 2016-07-19 | Freescale Semiconductor, Inc. | Trench gate FET with self-aligned source contact |
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