JP6645594B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP6645594B2 JP6645594B2 JP2018568611A JP2018568611A JP6645594B2 JP 6645594 B2 JP6645594 B2 JP 6645594B2 JP 2018568611 A JP2018568611 A JP 2018568611A JP 2018568611 A JP2018568611 A JP 2018568611A JP 6645594 B2 JP6645594 B2 JP 6645594B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- contact
- length
- outermost
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 130
- 239000000758 substrate Substances 0.000 claims description 91
- 238000003860 storage Methods 0.000 claims description 47
- 238000009825 accumulation Methods 0.000 claims description 38
- 230000007547 defect Effects 0.000 claims description 34
- 239000011229 interlayer Substances 0.000 claims description 19
- 239000000969 carrier Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 25
- 229910052751 metal Inorganic materials 0.000 description 23
- 239000002184 metal Substances 0.000 description 23
- 238000010586 diagram Methods 0.000 description 11
- 230000002829 reductive effect Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 5
- 238000007665 sagging Methods 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000002441 reversible effect Effects 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- -1 helium ions Chemical class 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 210000000746 body region Anatomy 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 150000003609 titanium compounds Chemical class 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
- H01L27/0716—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
- H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/404—Multiple field plate structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41708—Emitter or collector electrodes for bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8611—Planar PN junction diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/868—PIN diodes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Description
[先行技術文献]
[特許文献]
[特許文献1] 特開2008−205015号公報
Claims (17)
- 半導体基板を有する半導体装置であって、
前記半導体基板はトランジスタ領域を含み、
前記トランジスタ領域は、
第1導電型のドリフト領域と、
前記半導体基板の表面から深さ方向に延伸して前記ドリフト領域に達し、かつ、前記表面において第1方向に各々延伸する複数のトレンチ部と、
前記ドリフト領域の上方に設けられ、各々の上面が前記表面に露出し、前記複数のトレンチ部のうち隣接する2つのトレンチ部の間において前記第1方向に交互に設けられた、第1導電型の複数のエミッタ領域および第2導電型の複数のコンタクト領域と、
前記深さ方向において前記ドリフト領域と前記複数のエミッタ領域との間に設けられ、前記ドリフト領域よりも高い第1導電型のドーピング濃度を有する蓄積領域と
を備え、
前記複数のコンタクト領域のうち前記第1方向と平行な方向において最も外側に位置する第1の最外コンタクト領域は、前記第1方向における長さが、前記第1の最外コンタクト領域を除く前記複数のコンタクト領域のうち一つのコンタクト領域に比べて長く、
前記蓄積領域は、前記第1の最外コンタクト領域の下方で終端している
半導体装置。 - 前記蓄積領域は、前記第1方向と平行な方向において延伸し、前記第1の最外コンタクト領域の前記第1方向における中央位置の手前で終端している
請求項1に記載の半導体装置。 - 前記第1の最外コンタクト領域の前記第1方向における長さは、前記第1の最外コンタクト領域を除く前記複数のコンタクト領域のうち一つのコンタクト領域における前記第1方向の長さに比べて10倍以上長い
請求項1または2に記載の半導体装置。 - 前記半導体装置は前記半導体基板の表面上に設けられた層間絶縁膜をさらに備え、
前記層間絶縁膜に設けられたコンタクトホールは、前記複数のコンタクト領域および前記複数のエミッタ領域上において前記第1方向に延伸して前記第1の最外コンタクト領域上にまで設けられる
請求項1から3のいずれか一項に記載の半導体装置。 - 前記半導体基板は、前記第1方向と平行な方向において前記第1の最外コンタクト領域の外側に設けられ、前記第1の最外コンタクト領域よりも低い第2導電型のドーピング濃度を有するベース領域を有し、
前記ベース領域の前記第1方向における長さは、前記第1の最外コンタクト領域を除く前記複数のコンタクト領域のうち一つのコンタクト領域における前記第1方向の長さに比べて10倍以上長い
請求項1から4のいずれか一項に記載の半導体装置。 - 前記半導体基板は、前記半導体基板の前記表面内において前記第1方向に直交する第2方向において、前記トランジスタ領域に隣接するダイオード領域を備え、
前記ダイオード領域は、前記複数のトレンチ部とは異なるトレンチ部であって、前記トランジスタ領域と前記ダイオード領域との境界領域に位置し、エミッタ電位が供給されるダミー導電部を有する境界ダミートレンチ部を有し、
前記複数のトレンチ部は、前記エミッタ電位が供給される前記ダミー導電部を各々有する複数のダミートレンチ部と、ゲート電位が供給されるゲート導電部を各々有する複数のゲートトレンチ部とを有し、
前記蓄積領域は、前記第2方向において前記トランジスタ領域から前記ダイオード領域へ延伸し、前記境界ダミートレンチ部で、または、前記複数のダミートレンチ部のうち前記境界ダミートレンチ部に最も近接する第1のダミートレンチ部と前記境界ダミートレンチ部との間で終端している
請求項1から5のいずれか一項に記載の半導体装置。 - 前記半導体基板は、前記境界ダミートレンチ部と前記第1のダミートレンチ部との間の境界メサ領域において、前記複数のエミッタ領域を有せず、前記第1方向と平行な方向において前記複数のコンタクト領域よりも長く延伸する第2導電型の拡張コンタクト領域をさらに有する
請求項6に記載の半導体装置。 - 前記深さ方向において前記半導体基板の裏面よりも前記蓄積領域に近い位置に設けられた第1の欠陥領域であって、前記第2方向と平行な方向において前記ダイオード領域から前記トランジスタ領域の一部まで設けられ、キャリアのライフタイムを短くする前記第1の欠陥領域を、前記ドリフト領域は有する
請求項6または7に記載の半導体装置。 - 前記深さ方向において前記複数のコンタクト領域よりも浅い位置に設けられた高濃度コンタクト領域であって、前記複数のコンタクト領域よりも高い第2導電型のドーピング濃度を有する前記高濃度コンタクト領域を、前記半導体基板の前記ダイオード領域は有する
請求項6から8のいずれか一項に記載の半導体装置。 - 前記半導体基板は、前記第1方向と平行な方向において前記第1の最外コンタクト領域の外側に設けられ、前記第1の最外コンタクト領域よりも低い第2導電型のドーピング濃度を有するベース領域を有し、
前記第1方向と平行な方向において、前記ベース領域の長さは前記第1の最外コンタクト領域の長さよりも短い
請求項1から9のいずれか一項に記載の半導体装置。 - 前記トランジスタ領域における前記第1方向と平行な方向において、前記第1の最外コンタクト領域の外側の端部と前記第1の最外コンタクト領域上において層間絶縁膜に設けられたコンタクトホールの外側の端部との長さLaは、前記第1方向と平行な方向における前記第1の最外コンタクト領域上における前記コンタクトホールの外側の端部と前記蓄積領域の外側の端部との長さLbよりも短い
請求項1から10のいずれか一項に記載の半導体装置。 - 前記半導体基板の前記表面内において前記第1方向に直交する第2方向において前記トランジスタ領域に隣接するダイオード領域は、前記半導体基板の裏面に露出するカソード領域を含み、
前記第1方向と平行な方向において、前記カソード領域における外側の端部と前記第1の最外コンタクト領域の内側の端部との長さL1cは、前記第1の最外コンタクト領域の長さL15よりも長い
請求項1から11のいずれか一項に記載の半導体装置。 - 前記半導体基板は、前記半導体基板の前記表面内において前記第1方向に直交する第2方向において、前記トランジスタ領域に隣接するダイオード領域を備え、
前記ダイオード領域は、
第1導電型のドリフト領域と、
第2導電型のベース領域と、
前記深さ方向において前記ドリフト領域と前記ベース領域との間に設けられ、前記ドリフト領域よりも高い第1導電型のドーピング濃度を有する蓄積領域と、
前記複数のトレンチ部とは異なるトレンチ部であって、前記トランジスタ領域と前記ダイオード領域との境界領域に位置し、エミッタ電位が供給されるダミー導電部を有する境界ダミートレンチ部と
を備え、
前記ダイオード領域と前記境界ダミートレンチ部に接する境界メサ領域とにおける前記蓄積領域は、前記境界メサ領域以外の前記トランジスタ領域における前記蓄積領域に比べて、第1方向において外側に位置する
請求項1から5のいずれか一項に記載の半導体装置。 - 前記ダイオード領域は、前記第1方向と平行な方向において前記ベース領域の外側に設けられ、前記ベース領域よりも高い第2導電型のドーピング濃度を有する第2の最外コンタクト領域を有し、
前記ダイオード領域および前記境界メサ領域における前記蓄積領域は、前記第1方向と平行な方向において前記第2の最外コンタクト領域よりも外側に位置する
請求項13に記載の半導体装置。 - 前記第1方向と平行な方向において、前記第2の最外コンタクト領域の外側の端部は、前記第1の最外コンタクト領域の外側の端部よりも外側に位置し、
前記第1方向と平行な方向において、前記第2の最外コンタクト領域の長さL15'は、前記第1の最外コンタクト領域の長さL15よりも長い
請求項14に記載の半導体装置。 - 前記ダイオード領域は、前記半導体基板の裏面に露出するカソード領域を含み、
前記第1方向と平行な方向において、前記カソード領域における外側の端部から前記第2の最外コンタクト領域の内側の端部までの長さL1cは、前記第2の最外コンタクト領域の長さL15'よりも長い
請求項15に記載の半導体装置。 - 前記第1方向と平行な方向において前記第2の最外コンタクト領域の内側の端部から前記ダイオード領域における前記蓄積領域の外側の端部までの長さLc'は、前記第1方向と平行な方向において前記第1の最外コンタクト領域の内側の端部から前記境界メサ領域以外の前記トランジスタ領域における前記蓄積領域の外側の端部までの長さLcよりも大きい
請求項14から16のいずれか一項に記載の半導体装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017026386 | 2017-02-15 | ||
JP2017026386 | 2017-02-15 | ||
PCT/JP2018/005312 WO2018151227A1 (ja) | 2017-02-15 | 2018-02-15 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2018151227A1 JPWO2018151227A1 (ja) | 2019-06-27 |
JP6645594B2 true JP6645594B2 (ja) | 2020-02-14 |
Family
ID=63170731
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018568611A Active JP6645594B2 (ja) | 2017-02-15 | 2018-02-15 | 半導体装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10770456B2 (ja) |
EP (1) | EP3480855B1 (ja) |
JP (1) | JP6645594B2 (ja) |
CN (1) | CN109478570B (ja) |
WO (1) | WO2018151227A1 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016051973A1 (ja) * | 2014-10-03 | 2016-04-07 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
WO2018151227A1 (ja) * | 2017-02-15 | 2018-08-23 | 富士電機株式会社 | 半導体装置 |
JP6804379B2 (ja) | 2017-04-24 | 2020-12-23 | 三菱電機株式会社 | 半導体装置 |
US10600867B2 (en) * | 2017-05-16 | 2020-03-24 | Fuji Electric Co., Ltd. | Semiconductor device having an emitter region and a contact region inside a mesa portion |
JP6995722B2 (ja) * | 2018-09-19 | 2022-01-17 | 株式会社東芝 | 半導体装置 |
JP7346889B2 (ja) * | 2019-04-16 | 2023-09-20 | 富士電機株式会社 | 半導体装置 |
JP7404703B2 (ja) * | 2019-08-09 | 2023-12-26 | 富士電機株式会社 | 窒化物半導体装置の製造方法及び窒化物半導体装置 |
JP7456113B2 (ja) | 2019-10-11 | 2024-03-27 | 富士電機株式会社 | 半導体装置 |
CN113707706A (zh) * | 2020-05-21 | 2021-11-26 | 华大半导体有限公司 | 功率半导体装置及其制备方法 |
JP7475251B2 (ja) | 2020-10-01 | 2024-04-26 | 三菱電機株式会社 | 半導体装置 |
JP7471192B2 (ja) | 2020-10-01 | 2024-04-19 | 三菱電機株式会社 | 半導体装置 |
JP2023044189A (ja) * | 2021-09-17 | 2023-03-30 | 株式会社東芝 | 半導体装置 |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3405649B2 (ja) * | 1996-12-05 | 2003-05-12 | 株式会社東芝 | 半導体装置 |
US6399998B1 (en) * | 2000-09-29 | 2002-06-04 | Rockwell Technologies, Llc | High voltage insulated-gate bipolar switch |
JP5089191B2 (ja) | 2007-02-16 | 2012-12-05 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JP2008227251A (ja) * | 2007-03-14 | 2008-09-25 | Mitsubishi Electric Corp | 絶縁ゲート型トランジスタ |
KR101221206B1 (ko) * | 2009-06-11 | 2013-01-21 | 도요타 지도샤(주) | 반도체 장치 |
US8716746B2 (en) * | 2010-08-17 | 2014-05-06 | Denso Corporation | Semiconductor device |
JP5636808B2 (ja) * | 2010-08-17 | 2014-12-10 | 株式会社デンソー | 半導体装置 |
US20140117367A1 (en) * | 2012-10-25 | 2014-05-01 | Maxpower Semiconductor. Inc. | Devices, structures, and methods using self-aligned resistive source extensions |
KR20150011185A (ko) * | 2013-07-22 | 2015-01-30 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
JP5941448B2 (ja) * | 2013-09-11 | 2016-06-29 | 株式会社東芝 | 半導体装置 |
JP6119577B2 (ja) | 2013-11-26 | 2017-04-26 | 三菱電機株式会社 | 半導体装置 |
JP6119593B2 (ja) * | 2013-12-17 | 2017-04-26 | トヨタ自動車株式会社 | 半導体装置 |
JP6561611B2 (ja) * | 2015-06-17 | 2019-08-21 | 富士電機株式会社 | 半導体装置 |
US10332990B2 (en) * | 2015-07-15 | 2019-06-25 | Fuji Electric Co., Ltd. | Semiconductor device |
US10056370B2 (en) * | 2015-07-16 | 2018-08-21 | Fuji Electric Co., Ltd. | Semiconductor device |
WO2017099095A1 (ja) * | 2015-12-11 | 2017-06-15 | 富士電機株式会社 | 半導体装置および製造方法 |
CN107851666B (zh) * | 2016-02-15 | 2021-11-23 | 富士电机株式会社 | 半导体装置 |
WO2017155122A1 (ja) * | 2016-03-10 | 2017-09-14 | 富士電機株式会社 | 半導体装置 |
JP6724993B2 (ja) * | 2016-08-12 | 2020-07-15 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP6702423B2 (ja) * | 2016-08-12 | 2020-06-03 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
US10559663B2 (en) * | 2016-10-14 | 2020-02-11 | Fuji Electric Co., Ltd. | Semiconductor device with improved current flow distribution |
US10636877B2 (en) * | 2016-10-17 | 2020-04-28 | Fuji Electric Co., Ltd. | Semiconductor device |
CN109075202B (zh) * | 2016-11-17 | 2021-08-31 | 富士电机株式会社 | 半导体装置 |
JP6673501B2 (ja) * | 2016-12-08 | 2020-03-25 | 富士電機株式会社 | 半導体装置 |
WO2018105744A1 (ja) * | 2016-12-08 | 2018-06-14 | 富士電機株式会社 | 半導体装置 |
WO2018151227A1 (ja) * | 2017-02-15 | 2018-08-23 | 富士電機株式会社 | 半導体装置 |
US10319808B2 (en) * | 2017-04-03 | 2019-06-11 | Fuji Electric Co., Ltd. | Semiconductor device |
US10600867B2 (en) * | 2017-05-16 | 2020-03-24 | Fuji Electric Co., Ltd. | Semiconductor device having an emitter region and a contact region inside a mesa portion |
JP6958011B2 (ja) * | 2017-06-15 | 2021-11-02 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
CN109256417B (zh) * | 2017-07-14 | 2023-10-24 | 富士电机株式会社 | 半导体装置 |
JP7143575B2 (ja) * | 2017-07-18 | 2022-09-29 | 富士電機株式会社 | 半導体装置 |
JP6958093B2 (ja) * | 2017-08-09 | 2021-11-02 | 富士電機株式会社 | 半導体装置 |
US10388726B2 (en) * | 2017-10-24 | 2019-08-20 | Semiconductor Components Industries, Llc | Accumulation enhanced insulated gate bipolar transistor (AEGT) and methods of use thereof |
DE102018100237B4 (de) * | 2018-01-08 | 2022-07-21 | Infineon Technologies Austria Ag | Leistungshalbleiterbauelement mit dU/dt Steuerbarkeit und Verfahren zum Herstellen eines Leistungshalbleiterbauelements |
-
2018
- 2018-02-15 WO PCT/JP2018/005312 patent/WO2018151227A1/ja unknown
- 2018-02-15 CN CN201880002921.8A patent/CN109478570B/zh active Active
- 2018-02-15 EP EP18754605.6A patent/EP3480855B1/en active Active
- 2018-02-15 JP JP2018568611A patent/JP6645594B2/ja active Active
-
2019
- 2019-01-25 US US16/258,480 patent/US10770456B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
WO2018151227A1 (ja) | 2018-08-23 |
CN109478570B (zh) | 2021-08-31 |
EP3480855A4 (en) | 2019-09-04 |
CN109478570A (zh) | 2019-03-15 |
US20190157264A1 (en) | 2019-05-23 |
EP3480855B1 (en) | 2023-09-20 |
EP3480855A1 (en) | 2019-05-08 |
US10770456B2 (en) | 2020-09-08 |
JPWO2018151227A1 (ja) | 2019-06-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6645594B2 (ja) | 半導体装置 | |
JP7279770B2 (ja) | 半導体装置 | |
JP6741070B2 (ja) | 半導体装置およびその製造方法 | |
US10170607B2 (en) | Semiconductor device | |
JP6881463B2 (ja) | Rc−igbtおよびその製造方法 | |
US10741547B2 (en) | Semiconductor device | |
JP2024073632A (ja) | 半導体装置 | |
CN109219888B (zh) | 半导体装置 | |
CN109713037B (zh) | 一种绝缘栅双极性晶体管器件及其制备方法 | |
US9064952B2 (en) | Semiconductor device | |
JP7521642B2 (ja) | 半導体装置 | |
CN110692140B (zh) | 半导体装置 | |
WO2019159391A1 (ja) | 半導体装置 | |
JP2024033007A (ja) | 半導体装置 | |
US11955540B2 (en) | Semiconductor device and production method | |
JP7346889B2 (ja) | 半導体装置 | |
CN109314141A (zh) | 半导体装置 | |
JP2023139265A (ja) | 半導体装置 | |
JP2019186312A (ja) | 半導体装置 | |
US20220352315A1 (en) | Semiconductor device and method for producing same | |
KR20150061201A (ko) | 전력 반도체 소자 및 그 제조 방법 | |
US20240096965A1 (en) | Semiconductor device | |
JP2024013911A (ja) | 半導体装置 | |
KR101870824B1 (ko) | 전력 반도체 소자 및 그 제조방법 | |
KR101870823B1 (ko) | 전력 반도체 소자 및 그 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190131 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20191210 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20191223 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6645594 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |