JP6645594B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6645594B2 JP6645594B2 JP2018568611A JP2018568611A JP6645594B2 JP 6645594 B2 JP6645594 B2 JP 6645594B2 JP 2018568611 A JP2018568611 A JP 2018568611A JP 2018568611 A JP2018568611 A JP 2018568611A JP 6645594 B2 JP6645594 B2 JP 6645594B2
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Description
[先行技術文献]
[特許文献]
[特許文献1] 特開2008−205015号公報
Claims (17)
- 半導体基板を有する半導体装置であって、
前記半導体基板はトランジスタ領域を含み、
前記トランジスタ領域は、
第1導電型のドリフト領域と、
前記半導体基板の表面から深さ方向に延伸して前記ドリフト領域に達し、かつ、前記表面において第1方向に各々延伸する複数のトレンチ部と、
前記ドリフト領域の上方に設けられ、各々の上面が前記表面に露出し、前記複数のトレンチ部のうち隣接する2つのトレンチ部の間において前記第1方向に交互に設けられた、第1導電型の複数のエミッタ領域および第2導電型の複数のコンタクト領域と、
前記深さ方向において前記ドリフト領域と前記複数のエミッタ領域との間に設けられ、前記ドリフト領域よりも高い第1導電型のドーピング濃度を有する蓄積領域と
を備え、
前記複数のコンタクト領域のうち前記第1方向と平行な方向において最も外側に位置する第1の最外コンタクト領域は、前記第1方向における長さが、前記第1の最外コンタクト領域を除く前記複数のコンタクト領域のうち一つのコンタクト領域に比べて長く、
前記蓄積領域は、前記第1の最外コンタクト領域の下方で終端している
半導体装置。 - 前記蓄積領域は、前記第1方向と平行な方向において延伸し、前記第1の最外コンタクト領域の前記第1方向における中央位置の手前で終端している
請求項1に記載の半導体装置。 - 前記第1の最外コンタクト領域の前記第1方向における長さは、前記第1の最外コンタクト領域を除く前記複数のコンタクト領域のうち一つのコンタクト領域における前記第1方向の長さに比べて10倍以上長い
請求項1または2に記載の半導体装置。 - 前記半導体装置は前記半導体基板の表面上に設けられた層間絶縁膜をさらに備え、
前記層間絶縁膜に設けられたコンタクトホールは、前記複数のコンタクト領域および前記複数のエミッタ領域上において前記第1方向に延伸して前記第1の最外コンタクト領域上にまで設けられる
請求項1から3のいずれか一項に記載の半導体装置。 - 前記半導体基板は、前記第1方向と平行な方向において前記第1の最外コンタクト領域の外側に設けられ、前記第1の最外コンタクト領域よりも低い第2導電型のドーピング濃度を有するベース領域を有し、
前記ベース領域の前記第1方向における長さは、前記第1の最外コンタクト領域を除く前記複数のコンタクト領域のうち一つのコンタクト領域における前記第1方向の長さに比べて10倍以上長い
請求項1から4のいずれか一項に記載の半導体装置。 - 前記半導体基板は、前記半導体基板の前記表面内において前記第1方向に直交する第2方向において、前記トランジスタ領域に隣接するダイオード領域を備え、
前記ダイオード領域は、前記複数のトレンチ部とは異なるトレンチ部であって、前記トランジスタ領域と前記ダイオード領域との境界領域に位置し、エミッタ電位が供給されるダミー導電部を有する境界ダミートレンチ部を有し、
前記複数のトレンチ部は、前記エミッタ電位が供給される前記ダミー導電部を各々有する複数のダミートレンチ部と、ゲート電位が供給されるゲート導電部を各々有する複数のゲートトレンチ部とを有し、
前記蓄積領域は、前記第2方向において前記トランジスタ領域から前記ダイオード領域へ延伸し、前記境界ダミートレンチ部で、または、前記複数のダミートレンチ部のうち前記境界ダミートレンチ部に最も近接する第1のダミートレンチ部と前記境界ダミートレンチ部との間で終端している
請求項1から5のいずれか一項に記載の半導体装置。 - 前記半導体基板は、前記境界ダミートレンチ部と前記第1のダミートレンチ部との間の境界メサ領域において、前記複数のエミッタ領域を有せず、前記第1方向と平行な方向において前記複数のコンタクト領域よりも長く延伸する第2導電型の拡張コンタクト領域をさらに有する
請求項6に記載の半導体装置。 - 前記深さ方向において前記半導体基板の裏面よりも前記蓄積領域に近い位置に設けられた第1の欠陥領域であって、前記第2方向と平行な方向において前記ダイオード領域から前記トランジスタ領域の一部まで設けられ、キャリアのライフタイムを短くする前記第1の欠陥領域を、前記ドリフト領域は有する
請求項6または7に記載の半導体装置。 - 前記深さ方向において前記複数のコンタクト領域よりも浅い位置に設けられた高濃度コンタクト領域であって、前記複数のコンタクト領域よりも高い第2導電型のドーピング濃度を有する前記高濃度コンタクト領域を、前記半導体基板の前記ダイオード領域は有する
請求項6から8のいずれか一項に記載の半導体装置。 - 前記半導体基板は、前記第1方向と平行な方向において前記第1の最外コンタクト領域の外側に設けられ、前記第1の最外コンタクト領域よりも低い第2導電型のドーピング濃度を有するベース領域を有し、
前記第1方向と平行な方向において、前記ベース領域の長さは前記第1の最外コンタクト領域の長さよりも短い
請求項1から9のいずれか一項に記載の半導体装置。 - 前記トランジスタ領域における前記第1方向と平行な方向において、前記第1の最外コンタクト領域の外側の端部と前記第1の最外コンタクト領域上において層間絶縁膜に設けられたコンタクトホールの外側の端部との長さLaは、前記第1方向と平行な方向における前記第1の最外コンタクト領域上における前記コンタクトホールの外側の端部と前記蓄積領域の外側の端部との長さLbよりも短い
請求項1から10のいずれか一項に記載の半導体装置。 - 前記半導体基板の前記表面内において前記第1方向に直交する第2方向において前記トランジスタ領域に隣接するダイオード領域は、前記半導体基板の裏面に露出するカソード領域を含み、
前記第1方向と平行な方向において、前記カソード領域における外側の端部と前記第1の最外コンタクト領域の内側の端部との長さL1cは、前記第1の最外コンタクト領域の長さL15よりも長い
請求項1から11のいずれか一項に記載の半導体装置。 - 前記半導体基板は、前記半導体基板の前記表面内において前記第1方向に直交する第2方向において、前記トランジスタ領域に隣接するダイオード領域を備え、
前記ダイオード領域は、
第1導電型のドリフト領域と、
第2導電型のベース領域と、
前記深さ方向において前記ドリフト領域と前記ベース領域との間に設けられ、前記ドリフト領域よりも高い第1導電型のドーピング濃度を有する蓄積領域と、
前記複数のトレンチ部とは異なるトレンチ部であって、前記トランジスタ領域と前記ダイオード領域との境界領域に位置し、エミッタ電位が供給されるダミー導電部を有する境界ダミートレンチ部と
を備え、
前記ダイオード領域と前記境界ダミートレンチ部に接する境界メサ領域とにおける前記蓄積領域は、前記境界メサ領域以外の前記トランジスタ領域における前記蓄積領域に比べて、第1方向において外側に位置する
請求項1から5のいずれか一項に記載の半導体装置。 - 前記ダイオード領域は、前記第1方向と平行な方向において前記ベース領域の外側に設けられ、前記ベース領域よりも高い第2導電型のドーピング濃度を有する第2の最外コンタクト領域を有し、
前記ダイオード領域および前記境界メサ領域における前記蓄積領域は、前記第1方向と平行な方向において前記第2の最外コンタクト領域よりも外側に位置する
請求項13に記載の半導体装置。 - 前記第1方向と平行な方向において、前記第2の最外コンタクト領域の外側の端部は、前記第1の最外コンタクト領域の外側の端部よりも外側に位置し、
前記第1方向と平行な方向において、前記第2の最外コンタクト領域の長さL15'は、前記第1の最外コンタクト領域の長さL15よりも長い
請求項14に記載の半導体装置。 - 前記ダイオード領域は、前記半導体基板の裏面に露出するカソード領域を含み、
前記第1方向と平行な方向において、前記カソード領域における外側の端部から前記第2の最外コンタクト領域の内側の端部までの長さL1cは、前記第2の最外コンタクト領域の長さL15'よりも長い
請求項15に記載の半導体装置。 - 前記第1方向と平行な方向において前記第2の最外コンタクト領域の内側の端部から前記ダイオード領域における前記蓄積領域の外側の端部までの長さLc'は、前記第1方向と平行な方向において前記第1の最外コンタクト領域の内側の端部から前記境界メサ領域以外の前記トランジスタ領域における前記蓄積領域の外側の端部までの長さLcよりも大きい
請求項14から16のいずれか一項に記載の半導体装置。
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