JP6599518B2 - 酸化物半導体層を含む薄膜トランジスタ、その製造方法及び表示装置 - Google Patents
酸化物半導体層を含む薄膜トランジスタ、その製造方法及び表示装置 Download PDFInfo
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- JP6599518B2 JP6599518B2 JP2018114108A JP2018114108A JP6599518B2 JP 6599518 B2 JP6599518 B2 JP 6599518B2 JP 2018114108 A JP2018114108 A JP 2018114108A JP 2018114108 A JP2018114108 A JP 2018114108A JP 6599518 B2 JP6599518 B2 JP 6599518B2
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- oxide semiconductor
- semiconductor layer
- film transistor
- thin film
- layer
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- 239000004065 semiconductor Substances 0.000 title claims description 294
- 239000010409 thin film Substances 0.000 title claims description 186
- 238000004519 manufacturing process Methods 0.000 title claims description 32
- 238000000034 method Methods 0.000 title claims description 29
- 239000010408 film Substances 0.000 claims description 82
- 229910052738 indium Inorganic materials 0.000 claims description 70
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 70
- 239000000758 substrate Substances 0.000 claims description 67
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 51
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 44
- 239000001301 oxygen Substances 0.000 claims description 44
- 229910052760 oxygen Inorganic materials 0.000 claims description 44
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 32
- 229910052733 gallium Inorganic materials 0.000 claims description 32
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims description 32
- 238000009832 plasma treatment Methods 0.000 claims description 25
- 238000007740 vapor deposition Methods 0.000 claims description 17
- 239000010410 layer Substances 0.000 description 365
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- 239000000203 mixture Substances 0.000 description 13
- 239000004973 liquid crystal related substance Substances 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 229910052814 silicon oxide Inorganic materials 0.000 description 11
- 238000000151 deposition Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 230000005540 biological transmission Effects 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
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- 229910021417 amorphous silicon Inorganic materials 0.000 description 8
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- 239000004033 plastic Substances 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
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- 239000004642 Polyimide Substances 0.000 description 5
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
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- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910001182 Mo alloy Inorganic materials 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 229910052779 Neodymium Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
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- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
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- 229920000178 Acrylic resin Polymers 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 150000001879 copper Chemical class 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
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- 229910001195 gallium oxide Inorganic materials 0.000 description 2
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- 230000000704 physical effect Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
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- 238000001914 filtration Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PIPQOOWEMLRYEJ-UHFFFAOYSA-N indium(1+) Chemical compound [In+] PIPQOOWEMLRYEJ-UHFFFAOYSA-N 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- -1 molybdenum series metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 150000003378 silver Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Classifications
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133357—Planarisation layers
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
- G02F1/13685—Top gates
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Nonlinear Science (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Description
図1に示した構造を有する比較例1〜3の薄膜トランジスタを製造した。
酸化物半導体層120の厚さによる薄膜トランジスタの特性を確認するために、図1に示された構造を有する薄膜トランジスタを製造した(比較例4、実施例1および2)。比較例1の薄膜トランジスタと同じ方法で薄膜トランジスタを製造するが、ただし酸化物半導体層120の組成は異なるようにした。以下、他の説明がない限り、薄膜トランジスタは、図1の構造を有し、比較例1の薄膜トランジスタと同じ方法で製造することができる。
蒸着温度および熱処理温度による酸化物半導体層120の特性を確認するためには、インジウム(In)、ガリウム(Ga)、亜鉛(Zn)およびスズ(Sn)が4:1:4:1の比(原子数比率)で混合して行い、30nmの厚さを有する酸化物半導体層120試料を製造した。ここで、酸化物半導体層120を形成するための蒸着温度と蒸着した後の熱処理温度を表3のように調整して、酸化物半導体層120の試料であるS11、S12、S13、S14、S15、およびS16を製造した。
スズ(Sn)の含有量による酸化物半導体層120の特性を確認するために、4:1:4の比(原子数比率)のインジウム(In)、ガリウム(Ga)、亜鉛(Zn)を含み、インジウム(In)に対するスズ(Sn)の割合(Sn/In)が表4のような酸化物半導体層120および薄膜トランジスタを製造した(S21、S22、S23、S24、およびS25)。表4でインジウム(In)に対するスズ(Sn)の割合(Sn/In)を%で表示した。%で示された割合は、次の式1で求めることができる。
[数1]
Sn/In比率(%)=[(Snの原子数)/(Inの原子数)]x100
101:基板
102:対向基板
110:ゲート電極
120:酸化物半導体層
130:ソース電極
140:ドレイン電極
150:ゲート絶縁膜
151:第1ゲート絶縁膜
152:第2ゲート絶縁膜
180:エッチストッパー
190:平坦化層
191:バッファ層
250:バンク層
270:有機発光素子
271、381:第1電極
272:有機層
273、383:第2電極
341、342:カラーフィルタ
350:遮光部
382:液晶層
700、800:表示装置
Claims (15)
- 基板上に配置されたゲート電極、
前記ゲート電極と絶縁され、前記ゲート電極と少なくとも一部重畳する酸化物半導体層、
前記ゲート電極と前記酸化物半導体層間に配置されたゲート絶縁膜、
前記酸化物半導体層と接続されたソース電極、および
前記ソース電極と離隔され前記酸化物半導体層と接続されたドレイン電極を含み、
前記酸化物半導体層は、インジウム(In)、ガリウム(Ga)、亜鉛(Zn)、スズ(Sn)および酸素(O)を含み、
前記酸化物半導体層では、前記インジウム(In)の含有量は前記ガリウム(Ga)の含有量よりも多く、
前記インジウム(In)と前記亜鉛(Zn)の含有量は実質的に同一であり、
前記インジウム(In)に対する前記のスズ(Sn)の割合(Sn/In)は0.1〜0.25であり、
前記酸化物半導体層が、順次に積層された第1層及び第2層を有し、
前記第2層の酸素(O)の含有量は、前記第1層の酸素(O)の含有量よりも多く、
前記第2層のうち前記ソース電極及び前記ドレイン電極と重畳しない領域の厚さが、前記ソース電極及び前記ドレイン電極のうち少なくとも一つと重畳する領域の厚さよりも厚い、薄膜トランジスタ。 - 前記酸化物半導体層が、20nm以上の厚さを有する請求項1に記載の薄膜トランジスタ。
- 前記酸化物半導体層が、18cm2/V・s以上の移動度(Mobility)を有する請求項1に記載の薄膜トランジスタ。
- 前記酸化物半導体層が、5x1017個/cm3以上のキャリア濃度を有する請求項1に記載の薄膜トランジスタ。
- 前記酸化物半導体層が、6.5g/cm3以上の密度を有する請求項1に記載の薄膜トランジスタ。
- 前記酸化物半導体層が、2.0x1017spins/cm3以下のスピン密度(spin density)を有する請求項1に記載の薄膜トランジスタ。
- 前記第2層が、前記酸化物半導体層の厚さの5〜20%の厚さを有する請求項1に記載の薄膜トランジスタ。
- 基板上にゲート電極を形成する工程、
前記ゲート電極と絶縁されて前記ゲート電極と少なくとも一部重畳する酸化物半導体層を形成する工程、
前記ゲート電極と前記酸化物半導体層を相互に絶縁させるゲート絶縁膜を形成する工程、
前記酸化物半導体層とそれぞれ接続され、互いに離隔して配置されるソース電極およびドレイン電極を形成する工程、および
前記酸化物半導体層をプラズマ処理する工程を含み、
前記酸化物半導体層は、インジウム(In)、ガリウム(Ga)、亜鉛(Zn)、スズ(Sn)および酸素(O)を含み、
前記酸化物半導体層では、前記インジウム(In)の含有量が前記ガリウム(Ga)の含有量よりも多く、
前記インジウム(In)と前記亜鉛(Zn)の含有量は実質的に同一であり、
前記インジウム(In)に対する前記のスズ(Sn)の割合(Sn/In)は0.1〜0.25であり、
前記酸化物半導体層が、順次に積層された第1層及び第2層を有し、
前記第2層の酸素(O)の含有量は、前記第1層の酸素(O)の含有量よりも多く、
前記第2層のうち前記ソース電極及び前記ドレイン電極と重畳しない領域の厚さが、前記ソース電極及び前記ドレイン電極のうち少なくとも一つと重畳する領域の厚さよりも厚い、
薄膜トランジスタの製造方法。 - 前記酸化物半導体層が、蒸着によって形成され、
前記蒸着は、150℃以上の温度で行われる請求項8に記載の薄膜トランジスタの製造方法。 - 前記酸化物半導体層が20nm以上の厚さを有する、請求項8に記載の薄膜トランジスタの製造方法。
- 前記プラズマ処理する工程で2.0〜2.5kW/m2のエネルギーが印加される、請求項8に記載の薄膜トランジスタの製造方法。
- 前記酸化物半導体層を形成する工程後、300℃以上の温度で前記酸化物半導体層を熱処理する工程をさらに含む、請求項8に記載の薄膜トランジスタの製造方法。
- 前記基板上に、前記ゲート電極、前記ゲート絶縁膜及び前記酸化物半導体層を順次に形成する、請求項8に記載の薄膜トランジスタの製造方法。
- 前記基板上に、前記酸化物半導体層、前記ゲート絶縁膜及び前記ゲート電極を順次に形成する、請求項8に記載の薄膜トランジスタの製造方法。
- 基板、
前記基板上に配置された薄膜トランジスタ、および
前記薄膜トランジスタと接続された第1電極を含み、
前記薄膜トランジスタは、
前記基板上に配置されたゲート電極、
前記ゲート電極と絶縁されて前記ゲート電極と少なくとも一部重畳する酸化物半導体層、
前記ゲート電極と前記酸化物半導体層間に配置されたゲート絶縁膜、
前記酸化物半導体層と接続されたソース電極、および
前記ソース電極と離隔され前記酸化物半導体層と接続されたドレイン電極を含み、
前記酸化物半導体層は、インジウム(In)、ガリウム(Ga)、亜鉛(Zn)、スズ(Sn)および酸素(O)を含み、
前記酸化物半導体層では、前記インジウム(In)の含有量が前記ガリウム(Ga)の含有量よりも多く、
前記インジウム(In)と前記亜鉛(Zn)の含有量は実質的に同一であり、
前記インジウム(In)に対する前記のスズ(Sn)の割合(Sn/In)は0.1〜0.25であり、
前記酸化物半導体層が、順次に積層された第1層及び第2層を有し、
前記第2層の酸素(O)の含有量は、前記第1層の酸素(O)の含有量よりも多く、
前記第2層のうち前記ソース電極及び前記ドレイン電極と重畳しない領域の厚さが、前記ソース電極及び前記ドレイン電極のうち少なくとも一つと重畳する領域の厚さよりも厚い、
表示装置。
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JP2019009435A (ja) | 2019-01-17 |
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EP3422419A1 (en) | 2019-01-02 |
US11201248B2 (en) | 2021-12-14 |
US20220069130A1 (en) | 2022-03-03 |
CN109148592A (zh) | 2019-01-04 |
CN109148592B (zh) | 2022-03-11 |
US10608117B2 (en) | 2020-03-31 |
US20180374956A1 (en) | 2018-12-27 |
US20200185531A1 (en) | 2020-06-11 |
EP3422419B1 (en) | 2020-08-26 |
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