JP6582975B2 - 半導体実装装置、半導体実装装置のヘッド及び積層チップの製造方法 - Google Patents
半導体実装装置、半導体実装装置のヘッド及び積層チップの製造方法 Download PDFInfo
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Description
うに、フリップチップボンダーなどの半導体実装装置のヘッド201の吸引孔202から半導体チップ101Aを吸引する。半導体チップ101Aの下方には、複数の端子104Bが形成された半導体チップ101Bが配置されている。次に、図15に示すように、半導体チップ101Aを加熱しながら、ヘッド201で半導体チップ101Aに圧力を加えて、半導体チップ101Aの端子104Aで補強樹脂105を押し破る。半導体チップ101Aの端子104Aと半導体チップ101Bの端子104Bとを接合することにより、半導体チップ101Aと半導体チップ101Bとの間の導通や剛性を確保している。
チップ101Aの中央部分と外周部分との間における差が小さい。そのため、端子104Aの半田103Aが潰れることで、半導体チップ101Aの端子104Aと半導体チップ101Bの端子104Bとの接合が可能である。
11Aの外周部分を吸引してもよい。また、図2に示すヘッド2の構造例では、ヘッド2の外部に吸引部26を配置しているが、図2に示すヘッド2の構造例に限定されず、ヘッド2の内部に吸引部26を配置してもよい。したがって、ヘッド2が、吸引部26を有してもよい。
図3〜図8を参照して、ヘッド2による半導体チップ11Aの保持について説明する。図3及び図4は、仮置きステージ3の断面図である。仮置きステージ3は、ヘッド2によって半導体チップ11Aを保持する前に半導体チップ11Aを一時的に載置するステージである。仮置きステージ3は、ステージ(基板)31、支持部32及び吸引孔33を有する。支持部32は、ステージ31を支持する。仮置きステージ3は、半導体チップ11Aが載置される載置面3Aを有する。仮置きステージ3の載置面3A及び側面に開口が形成されている。吸引孔33は、ステージ31及び支持部32の内部を通って、仮置きステージ3の載置面3A及び側面に形成された開口に繋がっている。仮置きステージ3の側面に形成された開口に吸引部(吸引機構)34が接続される。したがって、吸引孔33は、吸引部34に接続されている。吸引部34は、例えば、真空吸引ポンプである。
ば、ダイアフラム23の内部に充填される液体又は気体の充填量を調整し、目標充填量に到達した場合、ダイアフラム23の側面に設けられた弁27を閉じるようにしてもよい。ダイアフラム23及び弾性体24が半導体チップ11Aの裏面16Aの形状に沿って変形した場合の充填量を、目標充填量としてもよい。目標充填量に関するデータは、制御装置6に記憶されている。
に揃った状態を保持しつつ、弾性体24と、半導体チップ11Aの裏面16Aとが密着した状態を保持することができる。したがって、ウエハロットが切り変わった場合やチップ仕様が変わった場合であっても、ヘッド2やボンディングツール5等を交換せずに、複数の端子14Aの上面17Aがステージ面に対して平行に揃った状態で、ヘッド2が半導体チップ11Aを保持することが可能である。
図9〜図11を参照して、積層チップ(半導体装置)の製造方法について説明する。積層チップの製造方法において、ヘッド2が、半導体チップ11Aを保持する工程は、図3〜図8を参照して説明した工程と同様であるので、その説明は省略する。そのため、ヘッド2が、半導体チップ11Aを保持する工程の後の工程について説明する。
し破ることにより、図11に示すように、半導体チップ11Aの端子14Aと半導体チップ11Bの端子14Bとが接触する。
11Aに対する加熱処理の開始時点と、半導体チップ11Bに対する加熱処理の開始時点とを異ならせてもよい。また、半導体チップ11Aに対する加熱処理と、半導体チップ11Bに対する加熱処理とを同時に開始してもよい。
できる。
2 ヘッド
3 仮置きステージ
4 保持ステージ
5 ボンディングツール
6 制御装置
11、11A、11B 半導体チップ
14A、14B 端子
21、31、43 支持部
22、42 ヒータ
23 ダイアフラム
24 弾性体
25、33、44 吸引孔
26、34、45 吸引部
27 弁
28 供給部
31、41 ステージ
Claims (12)
- 液体又は気体を収容する収容部と、
前記収容部の内部が液体又は気体で満たされると、半導体チップと接触する接触部と、
前記半導体チップを吸い上げて、前記半導体チップを前記接触部に密着させる吸い上げ部と、
を備えることを特徴とする半導体実装装置。 - 前記半導体チップは、複数の端子と、前記複数の端子が形成された端子形成面と、前記端子形成面の反対側の反対面とを有し、
前記反対面の形状に沿って前記接触部が変形した状態で、前記反対面が前記接触部に密着していることを特徴とする請求項1に記載の半導体実装装置。 - 前記接触部が、前記反対面に対応して凹円弧形状又は凸円弧形状に変形することを特徴とする請求項2に記載の半導体実装装置。
- 複数の端子が形成された前記半導体チップの端子形成面側から前記半導体チップを吸引して、前記複数の端子の上面をステージ面に対して平行に揃える吸引部と、
を備えることを特徴とする請求項1から3の何れか一項に記載の半導体実装装置。 - 前記半導体チップと対向する第2半導体チップが載置され、前記第2半導体チップを加熱する加熱ステージを備えることを特徴とする請求項1から4の何れか一項に記載の半導体実装装置。
- 液体又は気体を収容する収容部と、
前記収容部の内部が液体又は気体で満たされると、半導体チップと接触する接触部と、
前記半導体チップを吸い上げて、前記半導体チップを前記接触部に密着させる吸い上げ部と、
を備えることを特徴とする半導体実装装置のヘッド。 - 前記半導体チップは、複数の端子と、前記複数の端子が形成された端子形成面と、前記
端子形成面の反対側の反対面とを有し、
前記反対面の形状に沿って前記接触部が変形した状態で、前記反対面が前記接触部に密着していることを特徴とする請求項6に記載の半導体実装装置のヘッド。 - 前記接触部が、前記反対面に対応して凹円弧形状又は凸円弧形状に変形することを特徴とする請求項7に記載の半導体実装装置のヘッド。
- 液体又は気体を収容する収容部と、前記収容部の内部が液体又は気体で満たされると、第1半導体チップと接触する接触部とを有するヘッドを、前記第1半導体チップ上に配置する工程と、
前記収容部の内部を液体又は気体で満たす工程と、
前記第1半導体チップを吸い上げて、前記第1半導体チップを前記接触部に密着させる工程と、
前記第1半導体チップの複数の第1端子と第2半導体チップの複数の第2端子とが対向するように、前記第1半導体チップ上に前記第2半導体チップを配置する工程と、
前記第2半導体チップを加熱し、前記ヘッドで前記第1半導体チップを加圧して、前記複数の第1端子と前記複数の第2端子とを接合する工程と、
を備えることを特徴とする積層チップの製造方法。 - 前記第1半導体チップは、前記複数の第1端子が形成された端子形成面と、前記端子形成面の反対側の反対面とを有し、
前記接触部が前記反対面に沿って変形した状態で、前記反対面が前記接触部に密着していることを特徴とする請求項9に記載の積層チップの製造方法。 - 前記接触部が、前記反対面に対応して凹円弧形状又は凸円弧形状に変形することを特徴とする請求項10に記載の積層チップの製造方法。
- 前記配置する工程の前に、前記複数の第1端子が形成された前記第1半導体チップの端子形成面側から前記第1半導体チップを吸引して、前記複数の第1端子の上面をステージ面に対して平行に揃える工程を備えることを特徴する請求項9から11の何れか一項に記載の積層チップの製造方法。
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