JP6597056B2 - 半導体実装装置の加熱ヘッダ及び半導体の接合方法 - Google Patents
半導体実装装置の加熱ヘッダ及び半導体の接合方法Info
- Publication number
- JP6597056B2 JP6597056B2 JP2015166794A JP2015166794A JP6597056B2 JP 6597056 B2 JP6597056 B2 JP 6597056B2 JP 2015166794 A JP2015166794 A JP 2015166794A JP 2015166794 A JP2015166794 A JP 2015166794A JP 6597056 B2 JP6597056 B2 JP 6597056B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor chip
- solder
- semiconductor
- heating
- terminal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 222
- 238000010438 heat treatment Methods 0.000 title claims description 49
- 238000000034 method Methods 0.000 title claims description 31
- 239000000463 material Substances 0.000 claims description 142
- 229910000679 solder Inorganic materials 0.000 claims description 61
- 239000011347 resin Substances 0.000 claims description 28
- 229920005989 resin Polymers 0.000 claims description 28
- 238000002844 melting Methods 0.000 claims description 12
- 230000008018 melting Effects 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 238000005304 joining Methods 0.000 claims description 6
- 230000003014 reinforcing effect Effects 0.000 description 23
- 238000010586 diagram Methods 0.000 description 14
- 239000011810 insulating material Substances 0.000 description 9
- 230000002093 peripheral effect Effects 0.000 description 7
- 239000000956 alloy Substances 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 229910010293 ceramic material Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/03—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
- H01L2021/60007—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process
- H01L2021/60022—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process using bump connectors, e.g. for flip chip mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
- H01L2021/60007—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process
- H01L2021/60022—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process using bump connectors, e.g. for flip chip mounting
- H01L2021/60097—Applying energy, e.g. for the soldering or alloying process
- H01L2021/6015—Applying energy, e.g. for the soldering or alloying process using conduction, e.g. chuck heater, thermocompression
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13075—Plural core members
- H01L2224/1308—Plural core members being stacked
- H01L2224/13082—Two-layer arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/13111—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/731—Location prior to the connecting process
- H01L2224/73101—Location prior to the connecting process on the same surface
- H01L2224/73103—Bump and layer connectors
- H01L2224/73104—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/75252—Means for applying energy, e.g. heating means in the upper part of the bonding apparatus, e.g. in the bonding head
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/75301—Bonding head
- H01L2224/75302—Shape
- H01L2224/75303—Shape of the pressing surface
- H01L2224/75304—Shape of the pressing surface being curved
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/75301—Bonding head
- H01L2224/75312—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81193—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/812—Applying energy for connecting
- H01L2224/81201—Compression bonding
- H01L2224/81203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3511—Warping
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Wire Bonding (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
5に示すように、フリップチップボンダーなどの半導体実装装置の加熱ヘッダ201を用いて、半導体チップ101Aを加熱及び加圧しながら、半導体チップ101Aの端子102A及び半田103Aで補強樹脂104を押し破る。半導体チップ101Aの半田103Aと半導体チップ101Bの半田103Bとを接合することにより、半導体チップ101Aと半導体チップ101Bとの間の導通や剛性を確保している。
ー22を有する上部2と、材料(部材)31、32を有する底部(下部)3とを備える。ヒーター22は、断熱材21に取り付けられている。断熱材21は、吸着穴23を有し、ヒーター22は、吸着穴24を有する。断熱材21の吸着穴23は、断熱材21を貫通している。ヒーター22の吸着穴24は、ヒーター22を貫通している。断熱材21の上方には、不図示の吸着機構が設けられている。吸着機構によって、断熱材21の吸着穴23及びヒーター22の吸着穴24から吸引が行われ、加熱ヘッダ1の上部2に底部3が吸着する。
示す工程を行ってもよい。
強樹脂61が加熱されることにより、補強樹脂61が軟化する。補強樹脂61が軟化した状態で、半導体チップ41が加圧されることで、端子42及び半田43が補強樹脂61に埋まるとともに、補強樹脂61が押し出される。図8に示すように、半導体チップ41の中央部分に荷重が集中するため、半導体チップ41の中央部分と半導体チップ51の中央部分との間の距離は、半導体チップ41の外周部分と半導体チップ51の外周部分との間の距離よりも短くなる。半導体チップ41の中央部分の下方の補強樹脂61が押し破られ、半導体チップ41の中央部分の端子42に形成された半田43と、半導体チップ51の中央部分の端子52に形成された半田53とが接触する。
一又は半導体チップ41における端子42の形成領域よりも大きくすることにより、半導体チップ41の複数の端子42に対する荷重の均等化が容易となる。
ヒーター22による加熱処理は、加熱が開始された後、段階的に温度を上昇させてもよい。加熱が行われる前の第1段階(常温時)では、材料32が半導体チップ41の裏面の中央部分に接触しており、半導体チップ41に対する押圧が、半導体チップ41の中央部分に集中した状態である(図7参照)。加熱が開始された後の第2段階では、補強樹脂61が軟化しており、半導体チップ41の中央部分に形成された端子42及び半田43により、補強樹脂61の中央部分が優先的に押し破られる(図8参照)。これにより、余分な補強樹脂61を、半導体チップ41の中央部分と半導体チップ51の中央部分との間に内包せずに、外側に送り出すことが可能となる。
2 上部
3 底部
21 断熱材
22 ヒーター
23、24 吸着穴
31 材料
32 材料
41、51 半導体チップ
42、52 端子
43、53 半田
Claims (5)
- 第1材料と、
前記第1材料に接合され、かつ、第1半導体チップを加圧する際に前記第1半導体チップに接触する第2材料と、
を備え、
前記第2材料における前記第1半導体チップとの接触面が、前記第1半導体チップ側に向かって凸の曲面であり、
前記第1材料及び前記第2材料の温度が、前記第1半導体チップの第1端子と第2半導体チップの第2端子との間に形成された半田の溶融温度に到達すると、前記第2材料における前記第1半導体チップとの接触面が平面になることを特徴とする半導体実装装置の加熱ヘッダ。 - 前記第1材料の熱膨張率は、前記第2材料の熱膨張率より大きいことを特徴とする請求項1に記載の半導体実装装置の加熱ヘッダ。
- 前記第2材料のサイズは、前記第1半導体チップのサイズと同一又は前記第1半導体チップのサイズよりも大きいことを特徴とする請求項1又は2に記載の半導体実装装置の加熱ヘッダ。
- 前記第2材料のサイズは、前記第1端子の形成領域のサイズと同一又は前記第1端子の形成領域のサイズよりも大きいことを特徴とする請求項1又は2に記載の半導体実装装置の加熱ヘッダ。
- 第1半導体チップ上に形成された複数の第1端子のそれぞれに第1半田を形成する工程と、
第2半導体チップ上に形成された複数の第2端子のそれぞれに第2半田を形成する工程と、
前記第2端子及び前記第2半田を覆うように、樹脂を前記第2半導体チップ上に形成する工程と、
前記複数の第1端子と前記複数の第2端子とが対向するように、前記樹脂上に前記第1
半導体チップを配置する工程と、
第1材料と、前記第1材料に接合された第2材料と、を有する加熱ヘッダの前記第2材料を前記第1半導体チップに接触させる工程と、
前記第1半導体チップを加熱及び加圧して、前記第1半田と前記第2半田とを接合する工程と、
を備え、
前記第2材料における前記第1半導体チップとの接触面が、前記第1半導体チップ側に向かって凸の曲面であり、
前記接合する工程において、前記第1材料及び前記第2材料の温度が、前記第1半田及び前記第2半田の溶融温度に到達すると、前記第2材料における前記第1半導体チップとの接触面が平面になることを特徴とする半導体の接合方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015166794A JP6597056B2 (ja) | 2015-08-26 | 2015-08-26 | 半導体実装装置の加熱ヘッダ及び半導体の接合方法 |
US15/209,846 US9536857B1 (en) | 2015-08-26 | 2016-07-14 | Heating header of semiconductor mounting apparatus and bonding method for semiconductor |
KR1020160092458A KR101750206B1 (ko) | 2015-08-26 | 2016-07-21 | 반도체 실장 장치의 가열 헤더 및 반도체의 접합 방법 |
TW105123064A TWI619215B (zh) | 2015-08-26 | 2016-07-21 | 半導體安裝設備之加熱頭座及用於半導體之接合方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015166794A JP6597056B2 (ja) | 2015-08-26 | 2015-08-26 | 半導体実装装置の加熱ヘッダ及び半導体の接合方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017045837A JP2017045837A (ja) | 2017-03-02 |
JP6597056B2 true JP6597056B2 (ja) | 2019-10-30 |
Family
ID=57682437
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015166794A Expired - Fee Related JP6597056B2 (ja) | 2015-08-26 | 2015-08-26 | 半導体実装装置の加熱ヘッダ及び半導体の接合方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9536857B1 (ja) |
JP (1) | JP6597056B2 (ja) |
KR (1) | KR101750206B1 (ja) |
TW (1) | TWI619215B (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11024595B2 (en) | 2017-06-16 | 2021-06-01 | Micron Technology, Inc. | Thermocompression bond tips and related apparatus and methods |
JP7301468B2 (ja) * | 2019-04-17 | 2023-07-03 | 株式会社ディスコ | 被加工物の加工方法、熱圧着方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH081615U (ja) * | 1996-06-06 | 1996-11-22 | 沖電気工業株式会社 | ボンディングツール |
JP4356137B2 (ja) | 1999-05-19 | 2009-11-04 | パナソニック株式会社 | 半導体装置の製造方法 |
TWI283906B (en) * | 2001-12-21 | 2007-07-11 | Esec Trading Sa | Pick-up tool for mounting semiconductor chips |
JP2009252897A (ja) | 2008-04-03 | 2009-10-29 | Toyoda Gosei Co Ltd | 接合体の製造方法及び接合体の製造装置 |
US8163599B2 (en) * | 2008-04-18 | 2012-04-24 | Panasonic Corporation | Flip-chip mounting method, flip-chip mounting apparatus and tool protection sheet used in flip-chip mounting apparatus |
JP2011066027A (ja) | 2009-09-15 | 2011-03-31 | Nec Corp | 矯正キャップ |
JP2015018897A (ja) * | 2013-07-10 | 2015-01-29 | マイクロン テクノロジー, インク. | 半導体装置の製造方法 |
US9576827B2 (en) * | 2014-06-06 | 2017-02-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method for wafer level bonding |
-
2015
- 2015-08-26 JP JP2015166794A patent/JP6597056B2/ja not_active Expired - Fee Related
-
2016
- 2016-07-14 US US15/209,846 patent/US9536857B1/en active Active
- 2016-07-21 KR KR1020160092458A patent/KR101750206B1/ko active IP Right Grant
- 2016-07-21 TW TW105123064A patent/TWI619215B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US9536857B1 (en) | 2017-01-03 |
KR101750206B1 (ko) | 2017-06-22 |
TW201712827A (zh) | 2017-04-01 |
TWI619215B (zh) | 2018-03-21 |
KR20170026119A (ko) | 2017-03-08 |
JP2017045837A (ja) | 2017-03-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI652743B (zh) | 半導體晶片的封裝裝置以及半導體裝置的製造方法 | |
TWI662671B (zh) | 接合裝置 | |
JP6582975B2 (ja) | 半導体実装装置、半導体実装装置のヘッド及び積層チップの製造方法 | |
TWI670776B (zh) | 半導體裝置的製造方法以及封裝裝置 | |
JP6455056B2 (ja) | ヒートシンク付パワーモジュール用基板の製造方法及び加圧装置 | |
JP2017022301A (ja) | 電子部品装置及びその製造方法 | |
JP2003282819A (ja) | 半導体装置の製造方法 | |
JP2010129810A (ja) | 半導体素子搭載用基板及び半導体装置 | |
JP6608640B2 (ja) | 実装構造体の製造方法 | |
JP6597056B2 (ja) | 半導体実装装置の加熱ヘッダ及び半導体の接合方法 | |
JP4659634B2 (ja) | フリップチップ実装方法 | |
JP2014082281A (ja) | 基板、半導体装置、基板の製造方法 | |
TWI659479B (zh) | 半導體裝置的製造方法以及封裝裝置 | |
JP2013065761A (ja) | 半導体装置の製造方法および半導体装置の製造装置 | |
JP6656836B2 (ja) | 実装構造体及びその製造方法 | |
TW571434B (en) | Semiconductor device and the manufacturing method of the same | |
TW490774B (en) | Semiconductor device having reliable electrical connection | |
JP5451053B2 (ja) | フリップチップ実装方法とフリップチップ実装装置 | |
JP3906130B2 (ja) | 半導体装置の製造方法 | |
JP7230602B2 (ja) | 絶縁回路基板及びその製造方法 | |
TWI264101B (en) | Method of flip-chip packaging including chip thermocompression | |
JP2008091650A (ja) | フリップチップ実装方法、および半導体パッケージ | |
JP2002184792A (ja) | 半導体装置および製造方法 | |
JP2009094353A (ja) | 半導体装置およびその製造方法 | |
JPH1177559A (ja) | ヒータテーブル |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180514 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20190215 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190226 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190422 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190903 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190916 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6597056 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |