JP2014082281A - 基板、半導体装置、基板の製造方法 - Google Patents

基板、半導体装置、基板の製造方法 Download PDF

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JP2014082281A
JP2014082281A JP2012228294A JP2012228294A JP2014082281A JP 2014082281 A JP2014082281 A JP 2014082281A JP 2012228294 A JP2012228294 A JP 2012228294A JP 2012228294 A JP2012228294 A JP 2012228294A JP 2014082281 A JP2014082281 A JP 2014082281A
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substrate
electrode
substrates
recess
semiconductor substrate
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JP2012228294A
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Yoshiaki Takemoto
良章 竹本
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Olympus Corp
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Olympus Corp
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Priority to JP2012228294A priority Critical patent/JP2014082281A/ja
Priority to US14/035,516 priority patent/US20140103522A1/en
Publication of JP2014082281A publication Critical patent/JP2014082281A/ja
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Abstract

【課題】基板同士の接合時の加重を大きくしてもバンプ潰れによるブリッジ等の接続不良を防止しつつ、高精度なアライメントができる基板を提供する。
【解決手段】所定の厚さを有する基材１０と、該基材の厚さ方向の一方の面に設けられる接続部２０を有する基板であって、前記接続部は、所定の深さを有する凹部３００と、凹部を囲むように立設した壁部２４０と、凹部の底面に配置される電極２２０と、電極と接触して配置される金属部２５０と、を備えることを特徴とする基板。
【選択図】図３

Description

本発明は、基板、それを用いた半導体装置および基板の製造方法に関する。
システムの小型化、高機能化のために、より小型で高性能な半導体装置が要請され、微小なバンプが多数形成されたウェハ同士を接合することが検討されている。
微小なバンプが多数形成されたウェハの電極同士を電気的に接続するためには、基材であるウェハに荷重をかける必要があるが、必要な荷重は電極の数とともに増加する。例えば、８インチ（２０．３２ｃｍ）のウェハ全面に径が１０μｍ程度の電極が形成された場合、電極の数は数億個になり、接合に必要な荷重は数トンになる。このような荷重が特定の電極に集中して作用してしまうと、電極やウェハにダメージを及ぼすことがある。
一方、ウェハ（もしくは半導体チップ）同士の接合には、バンプに半田を用いた接合が行われている。小型で高性能な半導体装置の要請によりバンプの小型化が要求される中で、バンプに半田を用いると、バンプが潰れることや、半田成分がマイグレーションを起こすことによりブリッジ等の接続不良が多発してしまう。
特許文献１には、一方の基板の表面に電極を形成し、形成した電極を覆うように樹脂膜を形成した後、電極部が露出するように、形成された樹脂膜の一部に開口部を形成し、開口部に金属ボール（バンプ）を供給した後、他方の基板を積層し、押圧しつつ加熱処理を行う方法が提案されている。
また、特許文献２には、半田バンプを溶融させない状態で基板同士を接合し、接合後に半田を溶融させる方法が提案されている。
特開２００４−６３７７０ 特開２００５−３２８８５
バンプの小型化が進むに従って、基板同士の接合時に、基板同士を高精度にアライメント（位置合わせ）する要求が高まってきている。また、ウェハなどの大面積で基板同士の接合を実現するために、基板の反り等を抑えるために接合時の加重を大きくしなければならない。
特許文献１の記載の方法では、基板同士の接合時に、基板同士を押圧しつつ加熱処理をする際に金属ボールが潰れても、電極を囲むように樹脂膜が形成されているので、ブリッジ等の接続不良を防止することができる。しかしながら、金属ボールが潰れてしまうので、基板同士を接合するためには、樹脂膜が変形するまで基板同士を押圧する必要がある。樹脂膜が変形するまで基板同士を押圧してしまうと、セルフアライメントによる力は小さいため、基板同士は、セルフアライメントによるアライメントができない。すなわち、基板同士は、高精度なアライメントをすることができない。
また、特許文献２の記載の方法では、半田を溶解させずに基板同士を接合するので、基板同士のセルフアライメントできない。よって、基板同士は、高精度なアライメントをすることができない。
本発明は、上記事情を鑑みてなされたものであって、基板同士の接合時に、基板同士を押圧しつつ加熱処理してもバンプ潰れによるブリッジ等の接続不良を防止しつつ、高精度なアライメントができる基板を提供することを目的とする。
本発明は、所定の厚さを有する基材と、該基材の厚さ方向の一方の面に設けられる接続部を有する基板であって、前記接続部は、所定の深さを有する凹部と、前記凹部の底面に配置される電極部と、前記凹部の外部に配置され、前記凹部を囲むように立設した壁部と、前記電極部と接触して配置される金属部と、を備えることを特徴とする基板である。
また、本発明は、複数の基板を積層して、電気的に接続した半導体装置であって、前記複数の基板のうち、少なくとも１つは、前記基板であることを特徴とする半導体装置である。
また、本発明は、所定の厚さを有する基材と、該基材の厚さ方向の一方の面に設けられる接続部を有する基板の製造方法であって、所定の深さを有する凹部を形成する工程と、前記凹部の底面に電極部を形成する工程と、前記凹部の外部であって、前記凹部を囲むように壁部を立設する工程と、前記電極部と接触するように金属部を配置する工程と、を有する基板の製造方法である。
本発明の基板によれば、基板同士の接合時に、基板同士を押圧しつつ加熱処理してもバンプ潰れによるブリッジ等の接続不良を防止し、なおかつ、基板同士の高精度なアライメントができる。
また、本発明の半導体装置によれば、バンプの接続不良がなく、高精度なアライメントがされた状態でバンプが接合された半導体装置を提供することができる。
本発明における第１の実施形態に係わる基板を示す平面図である。 本発明における第１の実施形態に係わる基板の単位領域を示す拡大図である。 本発明における第１の実施形態に係わる基板の接続部を示す図である。 本発明における第１の実施形態に係わる基板の製造方法を示す図である。 本発明における第１の実施形態に係わる基板の接続部を示す図である。 本発明における第２の実施形態に係わる基板の接続部を示す図である。 本発明における第３の実施形態に係わる基板の単位領域を示す拡大図である。 本発明における第３の実施形態に係わる基板の単位領域を示す拡大図である。 本発明における第３の実施形態に係わる半導体装置を示す図である。 本発明における第３の実施形態に係わる半導体装置の製造方法を示す図である。
以下、図面を参照し、本発明の実施形態を説明する。
（第１の実施形態）
本発明における第１の実施形態について、図１から図４を参照して説明する。
図１は、本実施形態の基板１を示す平面図である。基板１は、板状またはシート状の基材１０と、基材１０の面上に形成された接続部２０を複数備えている。
基材１０は、絶縁体あるいは半導体で所定の厚さを有する板状またはシート状に形成されている。基材１０を構成する絶縁体および半導体としては、例えばシリコン、樹脂、セラミクス、ガラス等が挙げられる。本実施形態では、基材１０として、シリコンウェハを用いている。
また、図示を省略しているが、基材１０には、接続部２０と電気的に接続された配線が形成されている。配線の態様は、印刷やエッチング等により基材１０の厚さ方向の一方または両方の面に形成されてもよいし、ビア等のように、基材を貫通するように形成されてもよいし、さらには、積層技術を用いた立体配線であってもよく、これらが適宜組み合わされてもよい。
基材１０の一方の面は、他の基板と接合される面１０Ａとされている。接合面１０Ａには、矩形の単位領域１１が複数設けられており、各単位領域１１に、接続部２０が同一レイアウトで形成され、同一態様の配線が形成されている。
図２は、単位領域１１を拡大して示す概略図である。接続部２０は、基材１０上に二次元配列されている。隣接する単位領域との境界１２は、個片化の際の切離線、いわゆるスクライブラインとなるが、概念上の線であり、必ずしも基材１０上に線状に形成される必要はない。
図３は、接続部２０を模式的に示す図であり、基板１の厚み方向の断面図である。なお、図３（ａ）は電極２２０と、金属部２５０を省略して示した接続部２０の基板１の厚み方向の断面図であり、図３（ｂ）は、電極２２０と、金属部２５０を省略せずに示した接続部２０の基板１の厚み方向の断面図である。接続部２０は、電極２２０と、樹脂部（壁部）２４０と、金属部２５０と、凹部３００と、を備える。
電極２２０は、基板１０の厚さ方向の一方の面に形成された凹部３００の底面に形成され、Cu、Ni、Ta、TaN、Ti、TiNのいずれかまたはその合金、または多層構造で形成される。電極２２０は、基材１０の内部に設けられた図示しない配線層と金属部２５０との電気的な接続がされる。なお、本実施形態では、電極２２０の表面形状は、円形でも良いし、多角形等でも良い。
樹脂部２４０は、金属部２５０を他の基板等と接続する際にブリッジ等により接続不良を防止するものである。樹脂部２４０は、樹脂材料等の絶縁体で形成されており、電極２２０を囲むように立設されている。なお、樹脂材料は、フラックス成分を含むものを用いても良い。また、樹脂部２４０で囲む領域である開口部２７０は、後述する金属層２９０等が形成される。
金属部２５０は、電極２２０と接触するように、電極２２０の上部に配置され、電極２２０を介して配線と電気的な接続がされる。なお、金属部２５０は、例えば、半田等の金属材料を溶融させたバンプ等で形成される。
図４は、本実施形態における基板１の製造方法を示す図である。
図４（ａ）に示すように、基板１は、基材１０の厚さ方向の一方の面にエッチング等により所定の深さを有する凹部３００が形成される。
次に、図４（ｂ）に示すように、基板１は、凹部３００の底面に電極２２０が形成される。ここで、電極２２０は、スパッタ法またはめっき法によって形成されるが、好ましくは無電解めっき法を用いて形成される。
次に、図４（ｃ）に示すように、基板１は、電極２２０を形成した面の一面に樹脂が塗布され、樹脂層２８０が形成される。ここで、樹脂は、スピンコート等により塗布される。
次に、図４（ｄ）に示すように、基板１は、電極２２０が露出するように樹脂膜２８０の一部をエッチング等で除去される。この工程により、電極２２０を囲むように立設する樹脂部（壁部）２４０が形成される。
次に、図４（ｅ）に示すように、基板１は、基材１０の電極２２０を形成した面の一面に金属が供給され、金属層２９０が形成される。ここで、金属は、半田等の材料であり、印刷法、スパッタ法、めっき法等により供給される。
次に、図４（ｆ）に示すように、基板１は、バイト２６０を用いて塗布された金属層２９０のうち、樹脂部２４０の高さよりも高い位置にある余分な金属を除去される。なお、本実施形態では、バイト２６０を用いた例で説明したが、CMP（Chemical Mechanical Polishing）やスキージを用いて余分な金属を除去しても良い。
次に、基板１は、供給された金属層２９０が溶融する温度以上で加熱されることにより、金属層２９０は溶融し、図４（ｇ）に示すような楕円体の金属部２５０が形成される。
ここで、基材１０は、絶縁体または半導体で形成されているため、金属層２９０に対する濡れ性が低い。そのため、凹部３００の側壁から金属部２５０に対して力５が働く。同様に、基材１０の表面から金属部２５０に対して力６が働く。これらの力５と力６により、基板同士の接合時に押圧しつつ加熱しても、金属部２５０は、潰れにくくなる。そのため、樹脂部２４０が変形するまで基板同士を押圧しなくても、基板同士は電気的な接続をすることができるので、基板同士はセルフアライメントによる高精度なアライメントができる。また、基板接合時に、基板を加熱処理することにより金属部２５０が溶融しても、樹脂部２４０によってブリッジ等による接続不良を防止することができる。
なお、本実施形態において、電極２２０の表面形状が円形の場合に電極２２０の直径の長さを直径とする球の体積は、開口部２７０の体積よりも小さくしても良い。この場合、基板同士の接合時に、基板同士を押圧する圧力を増加させても、ブリッジ等による接続不良を防止する効果が高まる。また、電極２２０の表面形状が多角形の場合に電極２２０の対角線の長さを直径とする球の体積は、開口部２７０の体積よりも小さくしても良い。
また、本実施形態において、凹部３００の底面に電極２２０を形成したが、図５に示すように、凹部３００の内部をすべて電極２２０で満たしても良い。この場合、図４（ｆ）に示す力５は、金属部２５０に対して働かないが、力６は働く。この力６により、基板同士の接合時に押圧しつつ加熱しても、金属部２５０は、潰れにくくなるのは同様である。そのため、樹脂部２４０が変形するまで基板同士を押圧しなくても、基板同士は電気的な接続をすることができるので、基板同士はセルフアライメントによる高精度なアライメントができる。
（第２の実施形態）
次に、第２の実施形態の基板について図６および図７を用いて説明する。
なお、第２の実施形態の基板は、第１の実施形態の基板と接続部のみが異なる。よって、接続部以外の部分については説明を省略する。
図６は、本実施形態の接続部４０−１、４０−２、４０−３を示す図であり、基板の断面図である。
本実施形態の基板は、接続部４０−１、４０−２、４０−３の大きさが異なり、接続部４０−１、接続部４０−２、接続部４０−３の順で大きくなっている。
接続部４０−１、４０−２、４０−３は、開口部２７０−１、２７０−２、２７０−３の体積をそれぞれ異ならせることにより形成される。ここで、開口部２７０−１、２７０−２，２７０−３の体積を異ならせるためには、開口部２７０−１、２７０−２、２７０−３の高さ（樹脂部２４０−１、２４０−２４０−３の高さと等しい）は、すべて同じにし、開口面積を異ならせる。ここで、開口面積とは、開口部２７０−１、２７０−２、２７０−３の基板１の厚みに対して垂直方向の断面積である。
電極２２０−１、２２０−２、２２０−３は、第１の実施形態と同様に、例えば、表面形状が円形となるように形成されるが、多角形等でも良い。
なお、電極２２０−１における表面の面積と開口部２７０−１の開口面積の比と、電極２２０−２における表面の面積と開口部２７０−２の開口面積の比と、電極２２０−３における表面の面積と開口部２７０−３の開口面積の比と、は等しいことが好ましいが、これに限定されない。
図７は、本実施形態における基板１を他の基板と接合される面１０Ａから見た図である。
接続部４０−１は、単位領域１１の中心部分に近い領域に配置されている。接続部４０−３は、単位領域１１の最外周に配置されている。接続部４０−２は、接続部４０−１と接続部４０−３の間に配置されている。すなわち、単位領域１１の中心部分から境界１２に近くなるにつれて、接続部を大きくするようにしている。
このように、境界１２に近くなるにつれて接続部を大きくしているため、基板同士の接合時に、基板同士は、より広範囲でセルフアライメント効果を発揮することができる。その結果、より高精度なアライメントをすることができるとともに、基板同士の接合時の加重を大きくしてもバンプ潰れによる接続不良を防止することができる
なお、本実施形態では、接続部４０−１、４０−２、４０−３の大きさは、すべて異なる例について説明したが、少なくとも１つの接続部の大きさが異なれば良く、例えば、図８に示すように、単位領域１１の最外周に配置される接続部のみ、他の接続部よりも大きくしても良い。
（第３の実施形態）
次に、第１の実施形態または第２の実施形態の基板１を複数備える半導体装置について説明する。なお、本実施形態では、第１の実施形態の基板１を複数備える半導体を用いて説明する。
図９は、本実施形態の半導体装置２を示す図である。
半導体装置２は、２つの基板を積層し、それぞれの基板を接続部を介して、電気的に接続したものである。本実施形態では、第１の実施形態の基板を２つ用いた例で説明するが、第２の実施形態の基板を2つ用いても良いし、一方の基板に第１の実施形態の基板を用いて、他方の基板に第２の実施形態の基板を用いても良い。また、一方の基板に第１の実施形態の基板または第２の実施形態の基板を用いて、他方の基板に本発明以外の基板を用いても良い。すなわち、少なくとも一方の基板に、第１の実施形態の基板または第２の実施形態の基板を用いれば良い。
図１０は、本実施形態の半導体装置２の製造方法を示す図である。
まず、図１０（ａ）に示すように、金属部２５０同士が近づくように、基板１同士をアライメント（位置合わせ）しながら、基板１同士を近づける。
次に、基板１は、押圧されつつ、金属部２５０が溶融する温度に加熱され、図１０（ｂ）に示すように金属部２５０同士が接続される。このとき、金属部２５０は、第１の実施形態で述べたように、基板同士を押圧しても潰れにくいため、樹脂部２４０が変形するまで押圧しなくても金属部２５０同士が接続される。よって。基板同士は、セルフアライメントによる力が働き、基板同士を高精度にアライメントすることができる。また、樹脂層２４０により、基板同士の接合時の加重を大きくしてもバンプ潰れによる接続不良を防止することができる。
次に、基板に対する加熱と加圧を終了し、図１０（ｃ）に示す半導体装置２が完成する。なお、図１０（ａ）〜図９（ｃ）に示す工程は、真空中や窒素雰囲気中や蟻酸雰囲気中などの所定の雰囲気中で行われる。
本実施形態の半導体装置は、第１の実施形態または第２の実施形態の基板を複数備え、お互いに接合した半導体装置であるため、セルフアライメント効果により高精度なアライメントができ、なおかつ、バンプ潰れによる接続不良を防止することができる。
１・・・基板、２・・・半導体装置、１０・・・基材、１１・・・単位領域、１２・・・境界線、２０、４０・・・接続部、２２０・・・電極、２４０・・・樹脂部（壁部）、２５０・・・金属部、２８０・・・樹脂層、２９０・・・金属層

Claims (6)

  1. 基材と、該基材の厚さ方向の一方の面に設けられる接続部を有する半導体基板であって、
    前記接続部は、
    凹部と、
    前記凹部の底面に配置される電極部と、
    前記凹部の外部に配置され、前記凹部を囲むように立設した非導電性の壁部と、
    前記電極部と接触して配置される金属部と、
    を備えることを特徴とする半導体基板。
  2. 前記電極の直径の長さを直径とする球の体積は、前記壁部が囲む体積よりも小さいことを特徴とする請求項１に記載の半導体基板。
  3. 前記接続部を複数有し、
    複数の前記接続部は、大きさがそれぞれ異なることを特徴とする請求項１に記載の半導体基板。
  4. 請求項１に記載の基板は、所定の単位領域毎に分けられ、
    前記所定の単位領域の最外周に配置した前記接続部は、他の接続部よりも大きいことを特徴とする請求項３に記載の半導体基板。
  5. 複数の半導体基板を積層して、電気的に接続した半導体装置であって、
    前記複数の半導体基板のうち、少なくとも１つは、請求項１に記載の半導体基板である
    ことを特徴とする半導体装置。
  6. 基材と、該基材の厚さ方向の一方の面に設けられる接続部を有する半導体基板の製造方法であって、
    凹部を形成する工程と、
    前記凹部の底面に電極部を形成する工程と、
    前記凹部の外部であって、前記凹部を囲むように壁部を立設する工程と、
    前記電極部と接触するように金属部を配置する工程と、
    を有する半導体基板の製造方法。

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