TW201712827A - 半導體安裝設備之加熱頭座及用於半導體之接合方法 - Google Patents

半導體安裝設備之加熱頭座及用於半導體之接合方法 Download PDF

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TW201712827A
TW201712827A TW105123064A TW105123064A TW201712827A TW 201712827 A TW201712827 A TW 201712827A TW 105123064 A TW105123064 A TW 105123064A TW 105123064 A TW105123064 A TW 105123064A TW 201712827 A TW201712827 A TW 201712827A
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semiconductor wafer
semiconductor
terminals
solder
materials
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TWI619215B (zh
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吉良秀彥
增山卓己
海沼則夫
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富士通股份有限公司
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Abstract

本申請案之目的在於提供一種用以抑制半導體晶片之翹曲及以一低負載互相接合該等端子的技術。 一半導體安裝設備之加熱頭座包括：一第一材料；及一第二材料，當加壓一第一半導體晶片時，該第二材料接合在該第一材料上且與該第一半導體晶片接觸，其中該第二材料與該第一半導體晶片之一接觸表面係朝向該第一半導體晶片側凸起之一彎曲表面，且當該第一材料及該第二材料之各溫度到達一焊料之一熔化溫度時，該第二材料與該第一半導體晶片之該接觸表面變成一平坦表面，而該焊料形成在該第一半導體晶片之一第一端子與一第二半導體晶片之一第二端子之間。

Description

半導體安裝設備之加熱頭座及用於半導體之接合方法 技術領域
一實施例係有關於一種半導體安裝設備之加熱頭座及用於半導體之接合方法。
背景技術
由於在伺服器等中可使用處理器及記憶體，有時使用積層多數半導體晶片之一積層半導體晶片以便增加效能。如圖12所示地，在一半導體晶片101上形成多數端子(微凸塊)102，且在各端子102中，一焊料103設置在一銅極(一Cu柱或一Cu支柱)之頂部。目前已有人使用一種藉由互相接合多數半導體晶片101之端子102來積層該等多數半導體晶片101的方法。
如圖13所示地，將一糊狀或薄膜狀補強樹脂104供給至該半導體晶片101，用以在積層該等多數半導體晶片101後確保接合可靠性。該糊狀補強樹脂104被稱為一NCP(非導電糊)，且該薄膜狀補強樹脂104被稱為一NCF(非導電薄膜)。如圖14及圖15所示地，使用例如一倒裝晶片接 合機之一半導體安裝設備的一加熱頭座201，一半導體晶片101A之端子102A及焊料103A推動且穿過該補強樹脂104，同時加熱及加壓該半導體晶片101A。該半導體晶片101A之焊料103A及一半導體晶片101B之焊料103B被接合，且因此確保在該半導體晶片101A與該半導體晶片101B間之傳導及硬度。
先前技術文獻 專利文獻
專利文獻1：日本專利公開第2000-332390號公報
專利文獻2：日本專利公開第2011-66027號公報
專利文獻3：日本專利公開第2015-18897號公報
發明概要
藉由該加熱頭座201之加熱在該半導體晶片101A之一上部份(該加熱頭座201之側)與該半導體晶片101A之一下部份(該端子102A之側)間產生一溫度差。因此，在該半導體晶片101A之上部份的熱膨脹比在該半導體晶片101A之下部份的熱膨脹大，且在該半導體晶片101A上出現一翹曲。為了接合該半導體晶片101A之端子102A及該半導體晶片101B之端子102B，必須抑制該半導體晶片101A之翹曲量至等於或小於5μm。
在該晶片之外部尺寸等於或大於20mm2之情形中，該半導體晶片101A之翹曲量有時會超過5μm。此外， 由於設置在半導體晶片101A與半導體晶片101B間之補強樹脂104的阻力，有時無法推動及穿過該補強樹脂104。因此，形成在該半導體晶片101A之一中央部份的端子102A及形成在該半導體晶片101B之一中央部份的端子102B可能未接合，如圖16所示。該等端子之接觸及接合的絕對負載與該半導體晶片之尺寸成正比地增加。但是，當該負載增加時，可能產生該半導體晶片之實體破壞。
本申請案已有鑒於上述問題作成，且目的在於提供一種用以抑制該半導體晶片之翹曲及以一低負載互相接合該等端子的技術。
依據本申請案之一方面，一種半導體安裝設備之加熱頭座包括：一第一材料；以及一第二材料，當一第一半導體晶片被加壓時，該第二材料被接合至該第一材料且與該第一半導體晶片接觸，其中該第二材料與該第一半導體晶片之一接觸表面係朝向該第一半導體晶片側凸起之一彎曲表面，且當該第一材料及該第二材料之各溫度到達一焊料之一熔化溫度時，該第二材料與該第一半導體晶片之該接觸表面變成一平坦表面，該焊料係形成在該第一半導體晶片之一第一端子與一第二半導體晶片之一第二端子之間。
依據本申請案之一方面，一種用於半導體之接合方法包括以下步驟：在形成在一第一半導體晶片上之多數第一端子的各第一端子上，形成一第一焊料；在形成在一 第二半導體晶片上之多數第二端子的各第二端子上，形成一第二焊料；在該第二半導體晶片上形成一樹脂，使得該樹脂覆蓋該第二端子及該第二焊料；將該第一半導體晶片放在該樹脂上使得該等多數第一端子面向該等多數第二端子；使一加熱頭座之一第二材料接觸該第一半導體晶片，該加熱頭座包括一第一材料及該第二材料，該第二材料接合在該第一材料上；及加熱及加壓該第一半導體晶片以接合該第一焊料及該第二焊料，其中該第二材料與該第一半導體晶片之一接觸表面係朝向該第一半導體晶片側凸起之一彎曲表面，且當該第一材料及該第二材料之各溫度在該接合時到達該第一焊料及該第二焊料之一熔化溫度時，該第二材料與該第一半導體晶片之該接觸表面變成一平坦表面。
依據本申請案，可抑制該半導體晶片之翹曲且以一低負載互相接合該等端子。
1,201‧‧‧加熱頭座
2‧‧‧上單元
3‧‧‧底單元(下單元)
21‧‧‧隔熱材料
22‧‧‧加熱器
23,24‧‧‧吸收孔
31,32‧‧‧材料(構件)
41,51‧‧‧半導體晶片
42,52‧‧‧端子
43,53‧‧‧焊料
61‧‧‧補強樹脂
101,101A,101B‧‧‧半導體晶片
102,102A,102B‧‧‧端子
103,103A,103B‧‧‧焊料
104‧‧‧補強樹脂
S1,S2‧‧‧表面
圖式簡單說明
圖1係一加熱頭座之橫截面圖。
圖2係該加熱頭座之橫截面圖。
圖3係依據一實施例之一安裝流程的一處理圖。
圖4係依據該實施例之一安裝流程的一處理圖。
圖5係依據該實施例之一安裝流程的一處理圖。
圖6係依據該實施例之一安裝流程的一處理圖。
圖7係依據該實施例之一安裝流程的一處理圖。
圖8係依據該實施例之一安裝流程的一處理圖。
圖9係依據該實施例之一安裝流程的一處理圖。
圖10係顯示各材料之材料名、熱膨脹率及楊氏模數之一例的圖。
圖11係顯示各材料之翹曲量及曲率半徑的圖。
圖12係一用於半導體晶片之接合方法的說明圖。
圖13係一用於半導體晶片之接合方法的說明圖。
圖14係一用於半導體晶片之接合方法的說明圖。
圖15係一用於半導體晶片之接合方法的說明圖。
圖16係一用於半導體晶片之接合方法的說明圖。
實施例之說明
以下，參照圖式說明一實施例。該實施例之構成係一例，且本發明不限於該實施例之構成。
圖1及圖2係包含在一半導體安裝設備中之一加熱頭座1的橫截面圖。該半導體安裝設備係，例如，一倒裝晶片接合機。該加熱頭座1包括具有一隔熱材料21及一加熱器22之一上單元2、及具有材料(構件)31、32之一底單元(下單元)3。該加熱器22附接在該隔熱材料21上。該隔熱材料21具有一吸收孔23，且該加熱器22具有一吸收孔24。該隔熱材料21之吸收孔23通過該隔熱材料21。該加熱器22之吸收孔24通過該加熱器22。在該隔熱材料21上方，設有一未圖示之吸收機構。該吸收機構由該隔熱材料21之吸收孔23 及該加熱器22之吸收孔24進行抽吸，使得該底單元3被吸在該加熱頭座1之上單元2上。
該加熱器22係一加熱機構，且加熱該等材料31、31。該等材料31、32係，例如，金屬材料、合金材料或陶瓷材料。該等材料31、32具有一良好熱傳導性。該材料31及該材料32係，例如，藉由輥接合來接合。該材料31之熱膨脹率(熱膨脹係數)與該材料32之熱膨脹率不同，且該材料31之熱膨脹率比該材料32之熱膨脹率高。在該材料31之表面中，相對於與該材料32之接合表面的表面(圖1中之S1)係一平坦表面。在該材料32之表面中，相對於與該材料31之接合表面的表面(圖1中之S2)係朝向與該材料31相對之側凸起。因此，該材料32具有一凸形(圓頂形)且具有朝向與該材料31相對之側凸起的一彎曲表面。該材料31係該第一材料之一例。該材料32係該第二材料之一例。
例如，該材料32可藉由將一陶瓷材料倒入一模具且燒結該陶瓷材料來形成。例如，該材料32可藉由車削加工或銑切加工一平板形金屬材料、一平板形合金材料或一平板形陶瓷材料來形成。
依據該實施例之一安裝流程將參照圖3至圖9說明。依據該實施例之安裝流程可作為一用於半導體晶片41、51之接合方法使用，或可作為用於包括該等半導體晶片41、51之一半導體設備的一接合方法或一製造方法使用。如圖3所示地，在形成在該半導體晶片41上之多數端子42的各端子上形成一焊料43。該等多數端子42係配置在形 成該半導體晶片41之一電路的一表面(以下稱為「該半導體晶片41之電路表面」)上。該焊料43係，例如，含有焊料粉末及助熔劑之一焊料糊。該焊料粉末係，例如，Sn或一含有Sn之合金。例如，該焊料43可使用一分配器形成在該等多數端子42上。該端子42係該第一端子之一例。該焊料43係該第一焊料之一例。
接著，如圖4所示地，在形成在該半導體晶片51上之多數端子52的各端子上形成一焊料53。該等多數端子52係配置在形成該半導體晶片51之一電路的一表面(以下稱為「該半導體晶片51之電路表面」)上。該焊料53係，例如，含有焊料粉末及助熔劑之一焊料糊。該焊料粉末係，例如，Sn或一含有Sn之合金。例如，該焊料53可使用一分配器形成在該等多數端子52上。該端子52係該第二端子之一例。該焊料53係該第二焊料之一例。
接著，如圖5所示地，在該半導體晶片51上形成一補強樹脂61使得該補強樹脂61覆蓋該等端子52及該等焊料53。因此，該等端子52及該等焊料53成為被埋在該補強樹脂61內之一狀態。該補強樹脂61可為一糊狀NCP，或可為一薄膜狀NCF。該補強樹脂61係該樹脂之一例。
在上述說明中，已說明在實施圖3所示之步驟後，實施圖4所示之步驟，且接著實施圖5所示之步驟的一例子。圖3至圖5所示之步驟的順序可變化如下。在實施圖4所示之步驟後，可實施圖5所示之步驟，且接著可實施圖3所示之步驟。此外，在實施圖4所示之步驟後，可實施圖3 所示之步驟，且接著可實施圖5所示之步驟。
接著，如圖6所示地，將該半導體晶片41放在該補強樹脂61上使得該等多數端子42面向該等多數端子52。因此，該半導體晶片41之電路表面面向該半導體晶片51之電路表面。接著，如圖7所示地，將該加熱頭座1抵壓在與該半導體晶片41之電路表面相對之側的表面(以下，稱為「該半導體晶片41之背面」)上。因此，包含在該加熱頭座1中之該底單元3的材料32抵壓該半導體晶片41之背面，且該材料32成為與該半導體晶片41之背面接觸的一狀態。此時，未實施藉由該加熱器22之加熱，且該等材料31、32之各溫度係一常溫。當該等材料31、32之各溫度係一常溫時，該材料32與該半導體晶片41之接觸表面係朝向該半導體晶片41之側凸起的一彎曲表面。該常溫包括，例如，5℃至35℃。
由於該材料32與該半導體晶片41之接觸表面係朝向該半導體晶片41之側凸起的一彎曲表面，該材料32壓抵該半導體晶片41之背面的一中央部份。即，該材料32接觸該半導體晶片41之背面的中央部份。在該材料32接觸該半導體晶片41之狀態下，開始加熱及加壓該半導體晶片41。加壓該半導體晶片41可在開始加熱該半導體晶片41後開始，或加熱該半導體晶片41可在開始加壓該半導體晶片41後開始。因此，加熱該半導體晶片41之開始時間點可與加壓該半導體晶片41之開始時間點不同。此外，加熱及加壓該半導體晶片41可同時開始。
增加該加熱器22之加熱溫度，並藉此加熱該半導體晶片41。即，由該加熱器22產生之熱傳送至該等材料31、32，且藉此加熱該半導體晶片41。在該隔熱材料21上方，設有未圖示之一加壓機構。藉由驅動該加壓機構，對該半導體晶片41施加一負載，並加壓該半導體晶片41。
由於該材料32接觸該半導體晶片41之背面，該半導體晶片41之背面的溫度比該半導體晶片41之電路表面的溫度高，因此在該半導體晶片41之前面與背面之間產生一溫度差。該材料32接觸該半導體晶片41之背面的中央部份，且該材料32未接觸該半導體晶片41之背面的一周邊部份。因此，該半導體晶片41之中央部份開始翹曲，使得該半導體晶片41之中央部份朝向該加熱頭座1之側上升。但是，由於該材料32接觸該半導體晶片41之背面的中央部份，該負載集中在該半導體晶片41之中央部份上，且抑制該半導體晶片41之中央部份的翹曲。
在上述說明中，在該加熱頭座1抵壓該半導體晶片41之背面後，增加該加熱器22之加熱溫度，且開始加熱該半導體晶片41。該實施例不限於上述例子，且可在該加熱頭座1抵壓該半導體晶片41之背面前增加該加熱器22之加熱溫度。在這情形中，該材料32與該半導體晶片41一接觸，便開始加熱該半導體晶片41。然後，可開始加壓該半導體晶片41。因此，加熱該半導體晶片41之開始時間點可與加壓該半導體晶片41之開始時間點不同。此外，藉由該材料32與該半導體晶片41一接觸便開始加壓該半導體晶 片41，加熱該半導體晶片41之開始時間點可與加壓該半導體晶片41之開始時間點一致。
熱由該半導體晶片41透過該等端子42及該等焊料43傳送至該補強樹脂61。該補強樹脂61被加熱，且因此該補強樹脂61軟化。在該補強樹脂61軟化之狀態下，加壓該半導體晶片41。藉此，該等端子42及該等焊料43被埋在該補強樹脂61中，且因此推出該補強樹脂61。如圖8所示地，該負載集中在該半導體晶片41之中央部份上，且因此在該半導體晶片41之中央部份與該半導體晶片51之中央部份間的距離比在該半導體晶片41之周邊部份與該半導體晶片51之周邊部份間的距離短。推動且穿過在該半導體晶片41之中央部份下方的補強樹脂61，形成在該等端子42上且在該半導體晶片41之中央部份的該等焊料43與形成在該等端子52上且在該半導體晶片51之中央部份的該等焊料53接觸。
該材料31之熱膨脹率比該材料32之熱膨脹率高，且因此，當藉由該加熱器22進行加熱時，該材料31朝向該材料32之側(該半導體晶片41之側)翹曲。因此，該材料32由該凸形變形成一平板形，且該材料32與該半導體晶片41之接觸表面變成一平坦表面。由於該材料32與該半導體晶片41之接觸表面係如圖9所示之一平坦表面，該負載施加至該半導體晶片41之整體上，使在該半導體晶片41上之負載均一。該半導體晶片41之周邊部份被推向該半導體晶片51之側，且藉此抑制該半導體晶片41之翹曲。因此形 成在該等端子42上且在該半導體晶片41之周邊部份的該等焊料43接觸形成在該等端子52上且在該半導體晶片51之周邊部份的該等焊料53。
藉由該加熱器22進行之加熱使形成在該半導體晶片41之端子42與該半導體晶片51之端子52間的該等焊料43、53熔化，使得該等焊料43及該等焊料53接合在一起。此外，該等端子42及該等焊料43接合在一起，且該等該等端子52及該等焊料53接合在一起。由於該等端子42及該等端子52透過該等焊料43、53接合，該半導體晶片41及該半導體晶片51機械地連接，且該半導體晶片41及該半導體晶片51電性地連接。
在該等材料31、32之各溫度到達該等焊料43、53之熔化溫度的時間點，該材料32與該半導體晶片41之接觸表面可為一平坦表面。此外，由該等材料31、32之各溫度到達該等焊料43、53之熔化溫度前之的一時間點至當該等材料31、32之各溫度到達該等焊料43、53之熔化溫度的時間點，該材料32與該半導體晶片41之接觸表面可為一平坦表面。因此，當該等材料31、32之各溫度到達形成在該半導體晶片41之端子42與該半導體晶片51之端子52間的該等焊料43、53之熔化溫度時，該材料32與該半導體晶片41之接觸表面變成一平坦表面。直到在該等端子42與該等端子52間之接合完成為止，該材料32與該半導體晶片41之接觸表面均為一平坦表面，且因此抑制該等端子42、52發生不完美之接合。藉由完成在該等端子42與該等端子52間 之接合，製成包括該等半導體晶片41、51之一半導體裝置。該補強樹脂61之暫時硬化係在該等焊料43、53熔化之溫度完成。
該材料32之外部尺寸(平面圖中之面積)可等於該半導體晶片41之外部尺寸(平面圖中之面積)，或該材料32之外部尺寸可比該半導體晶片41之外部尺寸大。當該材料32之外部尺寸等於該半導體晶片41之外部尺寸或比該半導體晶片41之外部尺寸大時，可使在該半導體晶片41上之負載輕易地均一。
該材料32之外部尺寸可等於在該半導體晶片41中之用於該等端子42之一形成區域的尺寸(平面圖中之面積)，或該材料32之外部尺寸可比在該半導體晶片41中之用於該等端子42之形成區域的尺寸大。例如，在該等多數端子42配置在該半導體晶片41之電路表面上之一預定區域中的情形中，在該半導體晶片41之該等端子42之形成區域係在該半導體晶片41中之該預定區域的尺寸(平面圖中之面積)。當該材料32之外部尺寸等於在該半導體晶片41中之該等端子42之形成區域或比在該半導體晶片41中之該等端子42之形成區域大時，可使該半導體晶片41之該等多數端子42上的負載輕易地均一。
在一習知安裝設備中，為對該半導體晶片41施加一均一負載，需要對該半導體晶片41施加一等於或大於50kg/20mm2之負載。在依據該實施例之半導體安裝設備中，該局部加載係在該半導體晶片41上且在加壓該半導體 晶片41之初始階段進行，並且該均一加載係在該半導體晶片41上且在該等端子42與該等端子52間接合時進行。因此，可抑制該半導體晶片41之翹曲，且可在不對該半導體晶片41施加造成實體破壞之一負載的情形下接合該等端子42及該等端子52。在依據該實施例之半導體安裝設備中，例如，藉由以等於或小於50kg/20mm2之一低負載加壓該半導體晶片41，可接合等於或大於20mm2之半導體晶片41、51。
<例子>
在該加熱器22之加熱過程中，在開始加熱後，該溫度可階段地增加。在進行該加熱前之一第一階段中(在一常溫時)，該材料32接觸該半導體晶片41之背面的中央部份，且在這狀態下，對該半導體晶片41之壓力集中在該半導體晶片41之中央部份上(請參見圖7)。在開始加熱後之一第二階段，該補強樹脂61被軟化，且形成在該半導體晶片41之中央部份的該等端子42及該等焊料43優先地推動且穿過該補強樹脂61之中央部份(請參見圖8)。因此，可將多餘之補強樹脂61送至外側，且在該半導體晶片41之中央部份與該半導體晶片51之中央部份間不包括它。
在一第三階段，相較於第二階段，該溫度進一步增加。該材料32與該半導體晶片41之接觸表面由該凸起彎曲表面變形成一平坦表面，且因此，在這狀態下，集中在該半導體晶片41之中央部份上的壓力分散至該半導體晶片41之周邊部份(請參見圖9)。最後，該等材料31、32之各溫 度到達該等焊料43、53之熔化溫度，且具有該半導體晶片41之該材料的該接觸表面變成沒有翹曲(1μm)之一平坦表面。
在等於或大於20mm2之半導體晶片41安裝在該半導體晶片51上的情形中，最好該材料32之外部尺寸等於或大於該半導體晶片41之外部尺寸。該等材料31、32可依據熱膨脹率(α)及楊氏模數(E)來選擇，或等材料31、32可依據熱膨脹率來選擇。圖10顯示該等材料31、32之材料名、熱膨脹率及楊氏模數。該實施例不限於圖10所示之例子，且可使用其他材料。例如，在該材料31之熱膨脹率與該32之熱膨脹率間之差大的情形中，該材料31之翹曲量大。在這情形中，可藉由選擇具有一高楊氏模數之該材料31來抑制該材料31之翹曲量。
決定在一常溫時該材料32之凸形(凸起彎曲表面)的曲率半徑，使得該材料32與該半導體晶片41之接觸表面在到達一目標加熱溫度(例如，該等焊料43、53之熔化溫度)時變成一平坦表面。該材料31之翹曲量及該材料32之彎曲表面的曲率半徑取決於選擇之材料31、32之熱膨脹率、楊氏模數及厚度。因此，選擇該等材料31、32且決定該等材料31、32之厚度，使得該材料31產生等於或大於出現在該等半導體晶片41、51藉由習知安裝方法安裝之情形中的端子間間隙量(=該半導體晶片41被該材料31推動之量)的翹曲量。在該等材料31、32之厚度太小之情形中，有可能該熱翹曲受限於該壓力。另一方面，在該等材料31、32之厚 度太大之情形中，有可能熱傳性質不良且損害該加熱頭座1之效能。因此，依據該等材料31、32之選擇，該等材料31、32之各厚度宜等於或大於1mm且等於或小於3mm。
圖11顯示當該等材料31、32之各溫度到達該等焊料43、53之熔化溫度(例如，240℃)時，在該等材料31、32之一組合中該材料31之翹曲量δ及曲率半徑R。在圖11中，該材料31之翹曲量δ及曲率半徑R係藉由一雙金屬之邏輯公式來評估。在圖11中，各欄之上排顯示該材料31之翹曲量δ(mm)，且各欄之下排顯示該材料31之曲率半徑R(mm)。在此，圖11所示之值係例子，且該實施例不限於圖11所示之值。
在該等半導體晶片41、51藉由習知安裝方法安裝且該半導體晶片41之翹曲量(=端子間間隙量)係7μm之情形中，最好選擇AlN作為該材料31且選擇SiC作為該材料32。此外，就在加熱前之該材料32的初始形狀而言，最好該材料32之曲率半徑R係7000mm。在這情形中，當該等材料31、32之各溫度到達該等焊料43、53之熔化溫度時，該材料32之翹曲量變成7μm，且該材料32與該半導體晶片41之接觸表面變成一平坦表面。因此，該半導體晶片41被該材料32推動之量係7μm，且抑制該半導體晶片41之翹曲。
1‧‧‧加熱頭座
2‧‧‧上單元
3‧‧‧底單元(下單元)
21‧‧‧隔熱材料
22‧‧‧加熱器
23,24‧‧‧吸收孔
31,32‧‧‧材料(構件)

Claims (5)

  1. 一種半導體安裝設備之加熱頭座，其包含：一第一材料；以及一第二材料，當一第一半導體晶片被加壓時，該第二材料被接合至該第一材料且與該第一半導體晶片接觸，其中該第二材料與該第一半導體晶片之一接觸表面係朝向該第一半導體晶片側凸起之一彎曲表面，且當該第一材料及該第二材料之各溫度到達一焊料之一熔化溫度時，該第二材料與該第一半導體晶片之該接觸表面變成一平坦表面，該焊料係形成在該第一半導體晶片之一第一端子與一第二半導體晶片之一第二端子之間。
  2. 如請求項1之半導體安裝設備之加熱頭座，其中該第一材料之一熱膨脹率係比該第二材料之一熱膨脹率高。
  3. 如請求項1或2之半導體安裝設備之加熱頭座，其中該第二材料之一尺寸係等於該第一半導體晶片之一尺寸或係比該第一半導體晶片之該尺寸大。
  4. 如請求項1或2之半導體安裝設備之加熱頭座，其中該第二材料之一尺寸係等於該第一端子之一形成區域的一尺寸或係比該第一端子之該形成區域的該尺寸大。
  5. 一種用於半導體之接合方法，其包含：在於一第一半導體晶片上所形成之複數個第一端 子的各者上形成一第一焊料；在於一第二半導體晶片上所形成之複數個第二端子的各者上形成一第二焊料；在該第二半導體晶片上形成一樹脂使得該樹脂覆蓋該第二端子及該第二焊料；將該第一半導體晶片放在該樹脂上使得該等複數個第一端子面向該等複數個第二端子；使一加熱頭座之一第二材料與該第一半導體晶片接觸，該加熱頭座包括一第一材料及該第二材料，該第二材料被接合至該第一材料；以及加熱及加壓該第一半導體晶片以接合該第一焊料及該第二焊料，其中該第二材料與該第一半導體晶片之一接觸表面係朝向該第一半導體晶片側凸起之一彎曲表面，且當該第一材料及該第二材料之各溫度在該接合到達該第一焊料及該第二焊料之一熔化溫度時，該第二材料與該第一半導體晶片之該接觸表面變成一平坦表面。
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