TW201735194A - 半導體安裝設備、半導體安裝設備頭、及用於製造層疊式晶片之方法 - Google Patents
半導體安裝設備、半導體安裝設備頭、及用於製造層疊式晶片之方法 Download PDFInfo
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Abstract
一種半導體安裝設備包括:一儲存單元,其儲存一液體或一氣體;一接觸單元,其在以該液體或該氣體填充該儲存單元時接觸一半導體晶片;及一吸引單元,其吸住該半導體晶片以使該半導體晶片緊密地接觸該接觸單元。
Description
技術領域 本發明有關於半導體安裝設備、半導體安裝設備頭、及用於製造層疊式晶片之方法。
背景技術 在某些情形中,在一高階伺服器等中使用之處理器及記憶體可使用層疊多數半導體晶片以增進效能之一層疊式半導體晶片。如圖12所示,多數端子(微凸塊)104形成在一半導體晶片101上。該等端子104包括銅柱(Cu柱或Cu支柱)102及形成在銅柱102之頂部的焊料103。因此,使用接合多數半導體晶片101之端子104以層疊該等半導體晶片101的一方法。
為了在該等多數半導體晶片101層疊後確保接合可靠性,供給糊狀或薄膜狀補強樹脂105至各半導體晶片101上,如圖13所示。糊狀補強樹脂105亦被稱為NCP(非導電糊),而薄膜狀補強樹脂105亦稱為NCF(非導電薄膜)。如圖14所示,由如一倒裝晶片接合機之一半導體安裝設備的一頭201的一吸引孔202吸住一半導體晶片101A。形成多數端子104B之一半導體晶片101B設置在該半導體晶片101A下方。接著,藉由該頭201加壓該半導體晶片101A,同時加熱該半導體晶片101A以便藉由該半導體晶片101A之端子104A穿透該補強樹脂105,如圖15所示。因此接合該半導體晶片101A之端子104A及該半導體晶片101B之端子104B以確保在該半導體晶片101A與該半導體晶片101B間之電傳導及該等晶片之剛性。
先前技術文獻 專利文獻 專利文獻1:日本公開專利公報第2015-18897號 專利文獻2:日本公開專利公報第2011-66027號 專利文獻3:日本公開專利公報第2000-332390號 專利文獻4:日本公開專利公報第2001-230528號
發明欲解決之問題 在該半導體晶片101A中產生厚度變化及翹曲。因此,難以在藉由該頭加壓該半導體晶片101A時對該半導體晶片101A施加一均一壓力。當施加對該半導體晶片101A施加任一非均一壓力時,該半導體晶片101A之端子104A會無法穿透該補強樹脂105。因此,在該半導體晶片101A之端子104A與該半導體晶片101B之端子104B之間會發生接合失敗。
有鑑於上述問題所提出之本申請案之一目的係提供對一半導體晶片施加一均一壓力的一技術。
用以解決該問題之手段 依據該申請案之一方面,一種半導體安裝設備包括:一儲存單元,其儲存一液體或一氣體;一接觸單元,其在以該液體或該氣體填充該儲存單元時接觸一半導體晶片;及一吸引單元(sucking unit),其吸住該半導體晶片以使該半導體晶片緊密地接觸該接觸單元。
依據該申請案之另一方面,一種用於製造層疊式晶片之方法,包括以下步驟:設置包括儲存一液體或一氣體之一儲存單元的一頭,及當以該液體或該氣體在一第一半導體晶片上填充該儲存單元時接觸該第一半導體晶片的一接觸單元;以該液體或該氣體填充該儲存單元;吸住該第一半導體晶片以使該第一半導體晶片緊密地接觸該接觸單元;將一第二半導體晶片設置在該第一半導體晶片上,使得該第一半導體晶片之多數第一端子及該第二半導體晶片之多數第二端子相對;及藉由該頭加熱該第二半導體晶片及加壓該第一半導體晶片以接合該等多數第一端子及該等多數第二端子。
發明功效 依據這申請案,可對一半導體晶片施加一均一壓力。
實施例之說明 當該半導體晶片101A具有如設計之一精加工時,該半導體晶片101A之上表面(與形成端子之表面相對的一表面)是平坦的。此外,當形成在該半導體晶片101A上之多數端子104A具有如設計之一精加工時,該等多數端子104A之高度一致。當該半導體晶片101A之上表面平坦且該等多數端子104A之高度一致時,如圖14所示,即使該半導體晶片101A之上表面被吸在該頭201上時,該等多數端子104A之上表面亦互相平行地對齊。該半導體晶片101A之該等端子104A的上表面與該半導體晶片101B相對。
如圖16所示,該半導體晶片101A有一厚度變化,該等端子104A有一高度變化,且該半導體晶片101A有翹曲。如圖17所示,當被吸在該頭201上時,該半導體晶片101之上表面被平坦化。但是,該等多數端子104A之上表面未互相平行地對齊。因此,在該半導體晶片101A之端子104A與該半導體晶片101B之端子104B間的距離在該半導體晶片101A之中央部份與外周邊部份之間不同。
當該半導體晶片101A之外部尺寸等於或小於10mm平方時,在該半導體晶片101A之中央部份與外周邊部份間之差在該半導體晶片101A之端子104A與該半導體晶片101B之端子104B間的距離中為小。因此,該半導體晶片101A之端子104A與該半導體晶片101B之端子104B可由於該等端子104A之焊料103A崩塌而接合。
另一方面,當該半導體晶片101A之外部尺寸等於或大於20mm平方時,在該半導體晶片101A之中央部份與外周邊部份間之差在該半導體晶片101A之端子104A與該半導體晶片101B之端子104B間的距離中為大。只要該頭201吸附該半導體晶片101A且其上表面保持平坦,即使當在該半導體晶片101A上之一壓力(負載)增加時,該半導體晶片101A之所有多數端子104A亦因此不可與該半導體晶片101B之該等多數端子104B接合。此外,用以接合該半導體晶片101A之端子104A及該半導體晶片101B之端子104B之一壓力與該半導體晶片101A之尺寸成正比地增加。因此,僅增加壓力會對該半導體晶片101A造成實體破壞。
以下,參照圖式詳細地說明實施例。該等實施例之組態只是例子,且因此,本申請案不限於該等實施例之這些組態。
圖1係一半導體安裝設備1之組態圖。該半導體安裝設備1亦被稱為一倒裝晶片接合機。該半導體安裝設備1包括一頭2、一暫時放置台3、一保持台4、一接合工具5及一控制單元6。該頭2附接在該接合工具5上且例如,藉由該接合工具5上升、下降且平行地移動。該暫時放置台3係在藉由該頭2保持時暫時放置一上側半導體晶片之一台。當層疊多數半導體晶片時,該層疊式半導體晶片之最上方半導體晶片被該頭2保持,而該層疊式半導體晶片之最下方半導體晶片被該保持台4保持。此外,該保持台4加熱該最下方半導體晶片。
該控制單元6包括一未圖示中央處理單元(CPU)及一記憶體以依據可執行地配置在這記憶體中之一電腦程式控制該頭2、該暫時放置台3、該保持台4及該接合工具5所進行之操作及程序。該CPU亦稱為一處理器。但是,該CPU不限於單一處理器,而可為一多處理器。該記憶體包括,例如,一ROM(唯讀記憶體)及一RAM(隨機存取記憶體)。
圖2係該頭2之橫截面圖。該頭2包括一支持單元21、一加熱器22、一膜片23、一彈性體24及一吸引孔25。該支持單元21支持該加熱器22、該膜片23及該彈性體24。在該頭2之底與側面中形成多數孔。該吸引孔25通過該支持單元21、該加熱器22、該膜片23及該彈性體24以連接形成在該頭2之底與側面中的孔。一吸引單元(吸引機構)26與形成在該頭2之側面中的孔連接。因此,該吸引孔25與該吸引單元26連接。該吸引單元26被驅動以便由該吸引孔25吸住該半導體晶片11A,因此使該半導體晶片11A吸附在該頭2之底面上。該吸引單元26係例如一真空吸引泵。
在圖2所示之頭2的結構例中,該頭2包括一吸引孔25。但是,該頭2不限於圖2所示之結構例。該頭2可包括多數吸引孔25。在這情形中,該等多數吸引孔25之各吸引孔與該吸引單元26連接。例如,設置在該頭2之中央部份的至少一吸引孔25可吸住該半導體晶片11A之中央部份,且設置在該頭2之外周邊部份的至少一吸引孔25可吸住該半導體晶片11A之外周邊部份。在圖2所示之頭2的結構例中,該吸引單元26設置在該頭2之外部。但是,該頭2不限於圖2所示之結構例。該吸引單元26可設置在該頭2之內部。因此,該頭2可包括該吸引單元26。
該加熱器22係一加熱單元(加熱機構)。該加熱器22加熱該半導體晶片11A。由該加熱器22產生之熱透過該膜片23及該彈性體24傳送至該半導體晶片11A。因此該膜片23及該彈性體24宜具有高耐熱性。例如,該膜片23及該彈性體24可具有等於或大於200℃之一耐熱性。
一液體或氣體透過一閥27由一供給單元(進給單元)28供給至該膜片23中,且該閥27設置在該膜片23之一側面上。該膜片23因此儲存該液體或該氣體。儲存(填充)在該膜片23中之液體係例如一可熔化合金或油。儲存(填充)在該膜片23中之氣體係例如空氣。該膜片23由一彈性材料形成。該彈性體24設置在該膜片23之底部。該彈性體24係例如矽橡膠。該膜片23依據填充在該膜片23中之液體或氣體的量(體積、壓力等)來變形。該彈性體24依據該膜片23之變形來變形。即,該膜片23依據填充在該膜片23中之液體或氣體的量來變形,且該彈性體24亦是如此。該膜片23係一儲存單元之一例。該彈性體24係一接觸單元之一例。
<半導體晶片之支持> 以下將參照圖3至8說明藉由該頭2支持該半導體晶片11A。圖3與4係該暫時放置台3之橫截面圖。該暫時放置台3係該半導體晶片11A在被該頭2保持前暫時放置之一台。該暫時放置台3包括一台(板)31、一支持單元32及一吸引孔33。該支持單元32支持該台31。該暫時放置台3亦包括一安裝表面3A,且該半導體晶片11A放在該安裝表面3A上。在該暫時放置台3之安裝表面3A及一側面中形成多數孔。該吸引孔33通過該台31及該支持單元32以連接形成在該暫時放置台3之安裝表面3A及側面中的孔。一吸引單元(吸引機構)34與形成在該暫時放置台3之側面中的孔連接。因此,該吸引孔33與該吸引單元34連接。該吸引單元34係例如一真空吸引泵。
多數端子(微凸塊)14A形成在該半導體晶片11A上。該等端子14A包括多數銅柱(Cu柱或Cu支柱)12A及形成在銅柱12A之頂部的焊料13A。該半導體晶片11A包括多數端子14A、形成該等多數端子14A之一表面(端子形成表面)15A、及與該端子形成表面15A相對之一表面(背面)16A。圖3所示之半導體晶片11A之背面16A具有一凹圓弧形,且該半導體晶片11A之多數端子14的高度非一致。因此,該半導體晶片11A之多數端子14的上表面17A未互相平行地對齊。該半導體晶片11A之端子14A的上表面17A與該端子形成表面15A朝向相同方向且與圖3中之暫時放置台3的安裝表面3A相對。該吸引單元34被驅動以便由該吸引孔33吸住該半導體晶片11A之端子形成表面15A,因此使該半導體晶片11A可被吸附在該暫時放置台3之安裝表面3A上。藉由該吸引單元34吸引可在該半導體晶片11A放在該暫時放置台3之安裝表面3A上前實施。或者,藉由該吸引單元34吸引可在該半導體晶片11A放在該暫時放置台3之安裝表面3A上後實施。
該吸引單元34由該半導體晶片11A之端子形成表面15A側吸住該半導體晶片11A,使得在該等多數端子14A之上表面17A的各上表面與該暫時放置台3之安裝表面3A間的距離相同。藉由該吸引單元34吸引之強度係由該控制單元6控制。由於由該半導體晶片11A之端子形成表面15A側吸住該半導體晶片11A,如圖4所示,該等多數端子14A之上表面17A互相平行地對齊。在圖4中,由於該等多數端子14A之上表面互相平行地對齊,所有該等多數端子14A接觸該暫時放置台3之安裝表面3A。
圖3與4顯示補強樹脂未形成在該半導體晶片11A之端子形成表面15A上的一例。或者,可在該半導體晶片11A之端子形成表面15A上形成補強樹脂18A,如圖5所示。圖5係該暫時放置台3之橫截面圖。該補強樹脂18A係一薄膜狀NCF。該吸引單元34由該半導體晶片11A之端子形成表面15A側吸住該半導體晶片11A及該補強樹脂18A,使得在該等多數端子14A之上表面17A的各上表面與該暫時放置台3之安裝表面3A間的距離相同。藉由該吸引單元34吸引之強度係由該控制單元6控制。由於由該半導體晶片11A之端子形成表面15A側吸住該半導體晶片11A及該補強樹脂18A,如圖5所示,該等多數端子14A之上表面17A互相平行地對齊。
在圖3至5所示之暫時放置台3的結構例中,該暫時放置台3包括一吸引孔33。但是,該暫時放置台3不限於圖3至5所示之結構例。該暫時放置台3可包括多數吸引孔33。在這情形中,該等多數吸引孔33之各吸引孔與該吸引單元34連接。例如,設置在該暫時放置台3之中央部份的至少一吸引孔33可吸住該半導體晶片11A之中央部份,且設置在該暫時放置台3之外周邊部份的至少一吸引孔33可吸住該半導體晶片11A之外周邊部份。在圖3至5所示之暫時放置台3的結構例中,該吸引單元34設置在該暫時放置台3之外部。但是,該暫時放置台3不限於圖3至5所示之結構例。該吸引單元34可設置在該暫時放置台3之內部。因此,該暫時放置台3可包括該吸引單元34。
藉由該接合工具5使該頭2下降,同時維持該半導體晶片11A被吸附在該暫時放置台3之安裝表面3A上的狀態,直到該頭2與該半導體晶片11A接觸之前。如圖6所示,該頭2係下降到使該頭2放置在該半導體晶片11A上。因此,該膜片23及該彈性體24放置在該半導體晶片11A之背面16A上。請注意該補強樹脂18A可形成在該半導體晶片11A之端子形成表面15A上。
接著,開啟設置在該膜片23之側面上的閥27以由該供給單元28供給一液體或一氣體至該膜片23中,以便以該液體或該氣體填充該膜片23。如圖7所示,當以該液體或該氣體填充該膜片23時,該膜片23之中央部份朝向該半導體晶片11A膨脹。因此,該彈性體24之中央部份朝向該半導體晶片11A翹曲,藉此使該彈性體24接觸該半導體晶片11A之背面16A。如上所述,當以該液體或該氣體填充該膜片23時,該膜片23及該彈性體24變形,因此使該彈性體24接觸該半導體晶片11A之背面16A。當該彈性體24接觸該半導體晶片11A之背面16A時,該膜片23及該彈性體24依據該半導體晶片11A之背面16A的形狀變形。例如,當該半導體晶片11A之背面16A具有一凹圓弧形時,該膜片23及該彈性體24變形成與該半導體晶片11A之背面16A一致的一凸圓弧形。
當該彈性體24依據該半導體晶片11A之背面16A的形狀變形時,關閉設置在該膜片23之側面上的閥27以防止填充在該膜片23中之液體或氣體的量產生變化。該閥27之開啟與關閉係由該控制單元6控制。例如,當到達一目標填充量時,可調整填充在該膜片23中之液體或氣體量以關閉設置在該膜片23之側面上的閥27。或者,當該膜片23及該彈性體24依據該半導體晶片11A之背面16A的形狀變形時的一填充量可定義為該目標填充量。在該目標填充量之資料儲存在該控制單元6中。
接著,該吸引單元26進行吸引以便由該吸引孔25吸住該半導體晶片11A。因此,該半導體晶片11A之背面16A吸附在該彈性體24上,且因此,該彈性體24及該半導體晶片11A之背面16A互相緊密地接觸。因此,在該膜片23及該彈性體24已依據該半導體晶片11A之背面16A的形狀變形的狀態下,該半導體晶片11A之背面16A緊密地接觸該彈性體24。該吸引單元26係一吸引單元之一例。雖然圖3至7所示之半導體晶片11A的背面16A具有一凹圓弧形,但在某些情形中,各半導體晶片11A之背面16A具有一凸圓弧形。即使當半導體晶片11之背面16A具有一凸圓弧形,該膜片23及該彈性體24亦依據該半導體晶片11A之背面16A的形狀變形。因此,該彈性體24及該半導體晶片11A之背面16A互相緊密地接觸。例如,當該半導體晶片11A之背面16A具有一凸圓弧形時,該膜片23及該彈性體24變形成與該半導體晶片11A之背面16A一致的一凸圓弧形。
接著,藉由該接合工具5使該頭2上升以升高放在該暫時放置台3上之半導體晶片11A。如圖8所示,即使當該半導體晶片11A移動遠離該暫時放置台3時,該彈性體24及該半導體晶片11A之背面16A亦保持互相緊密地接觸。因此,該半導體晶片11A之背面16A在該等多數端子14A之上表面17A互相平行地對齊之狀態下吸附在該彈性體24上。請注意當升高該半導體晶片11A時可停止該吸引單元34之一吸引程序。
對各批晶圓而言,該半導體晶片11A之厚度及翹曲度可能發生變化。此外,各端子14之高度會變化。依據該等實施例之該半導體安裝設備1及該頭2,該彈性體24之形狀變化而與該半導體晶片11A之背面16A的形狀一致且該等多數端子14A之上表面17A互相平行地對齊。因此,可維持該彈性體24及該半導體晶片11A之背面16A互相緊密地接觸的狀態,同時維持該等多數端子14A之上表面17A互相平行地對齊的狀態。因此,即使一批晶圓或晶片規格改變時,該頭2亦可保持該半導體晶片11A在該等端子14A之上表面17A互相平行地對齊的狀態下,且不必更換該頭2、該接合工具5等。
在圖2與6至8之結構例中,該彈性體24設置在該膜片23之底部。但是,該頭2不限於圖2與6至8所示之結構例。該彈性體24不一定配置在該頭2中。即使在這情形中,該膜片23依據該半導體晶片11A之背面16A的形狀變形,且因此該膜片23及該半導體晶片11A之背面16A互相緊密地接觸。因此,該頭2可保持該半導體晶片11A在該等端子14A之上表面17A互相平行地對齊的狀態下。該膜片23及該彈性體24可互相結合成一體。
<用於製造層疊式晶片之方法> 以下參照圖9至11說明用於製造一層疊式晶片(半導體裝置)之一方法。在用於製造一層疊式晶片之方法中,該頭2保持該半導體晶片11A之一程序與參照圖3至8說明之程序相同,且因此在此不再說明。因此,在此將說明該頭2保持該半導體晶片11A之程序後的多數程序。
如圖9所示,一半導體晶片11B放在該保持台4上。圖9係該保持台4之橫截面圖。該保持台4包括一台(板)41、一加熱器42、一支持單元43及一吸引孔44。該保持台4係一加熱台之一例。該支持單元43支持該台41及該加熱器42。該保持台4亦包括一安裝表面4A,且該半導體晶片11B放在該安裝表面4A上。在該保持台4之安裝表面4A及一側面中形成多數孔。該吸引孔44通過該台41、該加熱器42及該支持單元43以連接形成在該保持台4之安裝表面4A及側面中的孔。一吸引單元(吸引機構)44與形成在該保持台4之側面中的孔連接。因此,該吸引孔44與該吸引單元45連接。該吸引單元45係例如一真空吸引泵。
多數端子(微凸塊)14B形成在該半導體晶片11B上。該等端子14B包括多數銅柱12B及形成在銅柱12B之頂部的焊料13B。此外,在該半導體晶片11B上形成多數補強樹脂18B。該補強樹脂18B可為一薄膜狀NCF或糊狀NCP。當該補強樹脂18A形成在該半導體晶片11A上時,該補強樹脂18B不必形成在該半導體晶片11B上。該半導體晶片11B包括多數端子14B、形成該等多數端子14B之一表面(端子形成表面)15B、及與該端子形成表面15B相對之一表面(背面)16B。該半導體晶片11B被保持在該保持台4上,使得該半導體晶片11B之背面16B及該保持台4之安裝表面4A相對。
該吸引單元45被驅動以便由該吸引孔44吸住該半導體晶片11B,因此使該半導體晶片11B吸附在該保持台4之安裝表面4A上。藉由該吸引單元45吸引可在該半導體晶片11B放在該保持台4之安裝表面4A上前實施。或者,藉由該吸引單元45吸引可在該半導體晶片11B放在該保持台4之安裝表面4A上後實施。請注意保持圖9所示之半導體晶片11B的程序可在保持該半導體晶片11A之程序前實行。
接著,藉由該接合工具5移動該頭2以便將該半導體晶片11A設置在該半導體晶片11B上方。在這情形中,該半導體晶片11A係設置成使得該半導體晶片11A之端子形成表面15A及該半導體晶片11B之端子形成表面15B相對,如圖10所示。接著,使用一未顯示辨識攝影機對齊該半導體晶片11A及該半導體晶片11B。由於該半導體晶片11A及該半導體晶片11B對齊,該半導體晶片11A之該等多數端子14A與該半導體晶片11B之該等多數端子14B相對。接著,藉由該接合工具5使該頭2下降。當該頭2下降時對該半導體晶片11A施加一負載以便在該半導體晶片11A上實施一加壓處理。由於該彈性體24及該半導體晶片11A之背面16A互相緊密地接觸,可對該半導體晶片11A施加一均一壓力。
當藉由該頭2在該半導體晶片11A上實施一加壓處理時,該等加熱器22與42開始一加熱處理。使該加熱器42之加熱溫度上升以便在該半導體晶片11B上實施該加熱處理。即,由該加熱器42產生之熱傳送至該台41以加熱該半導體晶片11B。由於該半導體晶片11B被加熱,熱由該半導體晶片11B傳送至該補強樹脂18B。由於該補強樹脂18B被加熱,該補強樹脂18B軟化。由於該半導體晶片11A被加壓且該補強樹脂18B軟化,該半導體晶片11A之端子14A被埋入該補強樹脂18B而穿透該補強樹脂18B。由於該彈性體24及該半導體晶片11A之背面16A互相緊密地接觸,可對該半導體晶片11A施加一均一壓力。因此,該半導體晶片11A之端子14A可輕易地穿透該補強樹脂18B。由於該半導體晶片11A之端子14A穿透該補強樹脂18B,該半導體晶片11A之端子14A及該半導體晶片11B之端子14B互相接觸,如圖11所示。
使該加熱器22之加熱溫度上升以便在該半導體晶片11A上實施一加熱處理。該加熱處理係藉由該加熱器22在該半導體晶片11A上實施,以便防止由該加熱器42傳送至該半導體晶片11B及該補強樹脂18B之熱透過該半導體晶片11A散失。即,該加熱器22在該半導體晶片11A上實施熱保留。藉由該加熱器22在該半導體晶片11上實施之加熱處理會使填充在該膜片23中之液體或氣體的量產生變化。在這情形中,設置在該膜片23之側面上的閥27可開啟或關閉以調整填充在該膜片23中之液體或氣體的量。或者,一隔熱材料可設置在該支持單元21與該膜片23之間來取代該加熱器22。
該半導體晶片11A之加壓處理可在該等半導體晶片11A與11B之加熱處理開始後開始。或者,該等半導體晶片11A與11B之加熱處理可在該半導體晶片11A之加壓處理開始後開始。依此方式,該等半導體晶片11A與11B之加熱處理及該半導體晶片11A之加壓處理的起始點可互不相同。或者,該半導體晶片11A之加壓處理及該半導體晶片11B之加熱處理可同時開始。或者,該半導體晶片11A之加熱處理的起始點及該半導體晶片11B之加熱處理的起始點可互不相同。或者,該半導體晶片11A之加熱處理及該半導體晶片11B之加熱處理可同時開始。
該加熱器42使該焊料13A與13B之加熱溫度上升到其熔點。該焊料13A與13B藉由如此熔化而接合在一起。因此,該半導體晶片11A之端子14A及該半導體晶片11B之端子14B接合,藉此確保在該半導體晶片11A與該半導體晶片11B間之電傳導及該等晶片之剛性。具有該等半導體晶片11A與11B之層疊式晶片係以此方式製成。
該補強樹脂18A與18B不必形成。在這情形中,在該半導體晶片11A之端子14A及該半導體晶片11B之端子14B接合後,使用一分配器在該半導體晶片11A與該半導體晶片11B之間填充一底部填充。
在圖9與10所示之保持台4的結構例中,該保持台4包括一吸引孔44。但是,該保持台4不限於圖9與10所示之保持台4的結構例。該保持台4可包括多數吸引孔44。在這情形中,該等多數吸引孔44之各吸引孔與該吸引單元45連接。例如,設置在該保持台4之中央部份的至少一吸引孔44可吸住該半導體晶片11B之中央部份,且設置在該保持台4之外周邊部份的至少一吸引孔44可吸住該半導體晶片11B之外周邊部份。在圖9與10所示之保持台4的結構例中,該吸引單元45設置在該保持台4之外部。但是,該保持台4不限於圖9與10所示之結構例。該吸引單元45可設置在該保持台4之內部。因此,該保持台4可包括該吸引單元45。
依據該等實施例之該半導體安裝設備1,可調整填充在該膜片23中之液體或氣體的量以使該膜片23及該彈性體24依據該半導體晶片11A之背面16A的形狀變形。即,該膜片23及該彈性體24之形狀變化而與該半導體晶片11A之背面16A之形狀一致。如此,該彈性體24與該半導體晶片11A之背面16A互相緊密地接觸。因此,當該頭2在該半導體晶片11A上實施一加壓處理時,可對該半導體晶片11A施加一均一壓力。
依據該等實施例之該半導體安裝設備1,可在該半導體晶片11A上實施一加壓處理且該半導體晶片11A之該等多數端子14A的上表面17A互相平行地對齊。因此,即使當在該半導體晶片11A、該等端子14A及該半導體晶片11A中分別產生厚度變化、高度變化及翹曲時,該半導體晶片11A之所有多數端子14A亦可與該半導體晶片11B之該等多數端子14B接合。如上所述,依據該等實施例之該半導體安裝設備1,該半導體晶片11A之厚度變化、該端子14A之高度變化及該半導體晶片11A之翹曲可藉由使該半導體晶片11A之該等端子14A的上表面17A互相平行地對齊來吸收。
1‧‧‧半導體安裝設備
2,201‧‧‧頭
3‧‧‧暫時放置台
3A,4A‧‧‧安裝表面
4‧‧‧保持台
5‧‧‧接合工具
6‧‧‧控制單元
11,11A,11B,101,101A,101B‧‧‧半導體晶片
12A,12B,102‧‧‧銅柱
13A,13B,103,103A‧‧‧焊料
14A,14B,104,104A,104B‧‧‧端子
15A,15B‧‧‧表面(端子形成表面)
16A,16B‧‧‧表面(背面)
17A‧‧‧上表面
18A,105‧‧‧補強樹脂
21,32,43‧‧‧支持單元
22,42‧‧‧加熱器
23‧‧‧膜片
24‧‧‧彈性體
25,33,44,202‧‧‧吸引孔
26,34,45‧‧‧吸引單元
27‧‧‧閥
28‧‧‧供給單元
31‧‧‧儲存單元;台(板)
41‧‧‧台
2,201‧‧‧頭
3‧‧‧暫時放置台
3A,4A‧‧‧安裝表面
4‧‧‧保持台
5‧‧‧接合工具
6‧‧‧控制單元
11,11A,11B,101,101A,101B‧‧‧半導體晶片
12A,12B,102‧‧‧銅柱
13A,13B,103,103A‧‧‧焊料
14A,14B,104,104A,104B‧‧‧端子
15A,15B‧‧‧表面(端子形成表面)
16A,16B‧‧‧表面(背面)
17A‧‧‧上表面
18A,105‧‧‧補強樹脂
21,32,43‧‧‧支持單元
22,42‧‧‧加熱器
23‧‧‧膜片
24‧‧‧彈性體
25,33,44,202‧‧‧吸引孔
26,34,45‧‧‧吸引單元
27‧‧‧閥
28‧‧‧供給單元
31‧‧‧儲存單元;台(板)
41‧‧‧台
圖式簡單說明 圖1係一半導體安裝設備之組態圖。 圖2係一頭之橫截面圖。 圖3係一暫時放置台之橫截面圖。 圖4係一暫時放置台之橫截面圖。 圖5係一暫時放置台之橫截面圖。 圖6係一頭及一暫時放置台之橫截面圖。 圖7係一頭及一暫時放置台之橫截面圖。 圖8係一頭之橫截面圖。 圖9係用於製造層疊式晶片之一方法的程序圖。 圖10係用於製造層疊式晶片之一方法的程序圖。 圖11係用於製造層疊式晶片之一方法的程序圖。 圖12係用於接合半導體晶片之一方法的說明圖。 圖13係用於接合半導體晶片之一方法的說明圖。 圖14係用於接合半導體晶片之一方法的說明圖。 圖15係用於接合半導體晶片之一方法的說明圖。 圖16係用於接合半導體晶片之一方法的說明圖。 圖17係用於接合半導體晶片之一方法的說明圖。
2‧‧‧頭
11A‧‧‧半導體晶片
21‧‧‧支持單元
22‧‧‧加熱器
23‧‧‧膜片
24‧‧‧彈性體
25‧‧‧吸引孔
26‧‧‧吸引單元
27‧‧‧閥
28‧‧‧供給單元
Claims (12)
- 一種半導體安裝設備,其包含: 一儲存單元,其儲存一液體或一氣體; 一接觸單元,其在以該液體或該氣體填充該儲存單元時接觸一半導體晶片;及 一吸引單元(sucking unit),其吸住該半導體晶片以使該半導體晶片緊密地接觸該接觸單元。
- 如請求項1之半導體安裝設備, 其中該半導體晶片包括複數個端子、該等多數端子被形成在其上之一端子形成表面、及在該端子形成表面之相對側上的一相對表面,且 該相對表面在該接觸單元依據該相對表面之形狀而被變形之狀態下緊密地接觸該接觸單元。
- 如請求項2之半導體安裝設備, 其中該接觸單元變形成與該相對表面一致之一凹圓弧形或一凸圓弧形。
- 如請求項1至3中任一項之半導體安裝設備,其包含: 一吸引單元(suction unit),其由複數個端子被形成在其上之該半導體晶片的一端子形成表面側吸住該半導體晶片,以使該複數個端子之該等上表面互相平行地對齊。
- 如請求項1至3中任一項之半導體安裝設備,其包含: 一加熱台,與該半導體晶片相對之一第二半導體晶片被安裝於其上,且其加熱該第二半導體晶片。
- 一種半導體安裝設備頭,其包含: 一儲存單元,其儲存一液體或一氣體; 一接觸單元,其在以該液體或該氣體填充該儲存單元時接觸一半導體晶片;及 一吸引單元,其吸住該半導體晶片以使該半導體晶片緊密地接觸該接觸單元。
- 如請求項6之半導體安裝設備頭, 其中該半導體晶片包括複數個端子、該等多數端子被形成在其上之一端子形成表面、及在該端子形成表面之相對側的一相對表面,且 該相對表面在該接觸單元依據該相對表面之形狀而被變形之狀態下緊密地接觸該接觸單元。
- 如請求項7之半導體安裝設備頭, 其中該接觸單元變形成與該相對表面一致之一凹圓弧形或一凸圓弧形。
- 一種用於製造層疊式晶片之方法,其包含: 設置包括儲存一液體或一氣體之一儲存單元的一頭,及當該儲存單元係以該液體或該氣體在一第一半導體晶片上填充時接觸該第一半導體晶片的一接觸單元; 以該液體或該氣體填充該儲存單元; 吸住該第一半導體晶片以使該第一半導體晶片緊密地接觸該接觸單元; 將一第二半導體晶片設置在該第一半導體晶片上,使得該第一半導體晶片之複數個第一端子及該第二半導體晶片之複數個第二端子彼此相對;及 藉由該頭加熱該第二半導體晶片及加壓該第一半導體晶片以接合該複數個第一端子及該複數個第二端子。
- 如請求項9之用於製造層疊式晶片之方法, 其中該第一半導體晶片包括該複數個第一端子被形成在其上之一端子形成表面、及在該端子形成表面之相對側上的一相對表面,且 該相對表面在該接觸單元依據該相對表面之形狀而被變形之狀態下緊密地接觸該接觸單元。
- 如請求項10之用於製造層疊式晶片之方法, 其中該接觸單元變形成與該相對表面一致之一凹圓弧形或一凸圓弧形。
- 如請求項9至11中任一項之用於製造層疊式晶片之方法,其包含: 在該設置前,由該複數個第一端子被形成在其上之該第一半導體晶片的一端子形成表面側吸住該第一半導體晶片,以使該複數個第一端子之該等上表面互相平行地對齊。
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JP2021090030A (ja) * | 2019-12-06 | 2021-06-10 | 富士電機株式会社 | 半導体装置及び半導体装置の製造方法 |
WO2024062921A1 (ja) * | 2022-09-20 | 2024-03-28 | 株式会社村田製作所 | プレスヘッド、プレス装置、半導体製造装置、および電子部品製造装置 |
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US9905528B2 (en) | 2018-02-27 |
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