CN106922087A - 半导体安装设备及其头部以及用于制造叠层芯片的方法 - Google Patents
半导体安装设备及其头部以及用于制造叠层芯片的方法 Download PDFInfo
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- CN106922087A CN106922087A CN201611088242.6A CN201611088242A CN106922087A CN 106922087 A CN106922087 A CN 106922087A CN 201611088242 A CN201611088242 A CN 201611088242A CN 106922087 A CN106922087 A CN 106922087A
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Abstract
本发明涉及半导体安装设备及其头部以及用于制造叠层芯片的方法。半导体安装设备包括:存储单元,其存储液体或者气体;接触单元,其在存储单元充满液体或者气体时与半导体芯片相接触;以及吸取单元,其吸取半导体芯片以使半导体芯片与接触单元紧密接触。
Description
技术领域
本发明涉及半导体安装设备及其头部以及用于制造叠层芯片的方法。
背景技术
用于高端服务器等中的处理器和存储器在一些情况下使用叠层半导体芯片,在该叠层半导体芯片中层叠多个半导体芯片以用于性能提高。如图12所示,在半导体芯片101上形成端子(微凸块)104。端子104包括铜柱(铜桩或铜墩)102以及在铜柱102的顶部上形成的焊料103。因此,使用了以下方法:其中多个半导体芯片101的端子104被接合以层叠多个半导体芯片101。
如图13所示,为了保证层叠多个半导体芯片101之后的接合的可靠性,在每个半导体芯片101上提供膏状或膜状增强型树脂105。膏状增强型树脂105又被称作NCP(非导电膏),而膜状增强型树脂105又被称作NCF(非导电膜)。如图14所示,从半导体安装设备例如倒装芯片焊接机(flip-chip bonder)的头部201的吸取孔202吸取半导体芯片101A。半导体芯片101B被布置在半导体芯片101A下面,在半导体芯片101B上形成多个端子104B。接下来,如图15所示,在加热半导体芯片101A的同时,通过头部201来对半导体芯片101A加压,以通过半导体芯片101A的端子104A来冲破增强型树脂105。从而,使半导体芯片101A的端子104A与半导体芯片101B的端子104B接合以保证半导体芯片101A与半导体芯片101B之间的电传导以及芯片的刚性。
[现有技术文献]
[专利文献]
[专利文献1]第2015-18897号日本专利特许公开
[专利文献2]第2011-66027号日本专利特许公开
[专利文献3]第2000-332390号日本专利特许公开
[专利文献4]第2001-230528号日本专利特许公开
发明内容
通过本发明要解决的问题
在半导体芯片101A中存在厚度的变化以及弯曲。因此,当用头部201对半导体芯片101A加压时,难以向半导体芯片101A施加均匀的压力。当向半导体芯片101A施加任何不均匀的压力时,半导体芯片101A的端子104A可能不能冲破增强型树脂105。因此,在半导体芯片101A的端子104A与半导体芯片101B的端子104B之间的接合中可能出现失败。
鉴于上述问题而提出的本申请的目的是提供一种向半导体芯片施加均匀的压力的技术。
解决问题的手段
根据本申请的一方面,一种半导体安装设备包括:存储单元,其存储液体或气体;接触单元,其在存储单元充满液体或气体时与半导体芯片相接触;以及吸取单元,其吸取半导体芯片以使半导体芯片与接触单元紧密接触。
根据本申请的一方面,一种用于制造叠层芯片的方法包括:在第一半导体芯片上布置头部,该头部包括:存储单元,其存储液体或气体;以及接触单元,其在存储单元充满液体或气体时与第一半导体芯片相接触;用液体或气体来填充存储单元;吸取第一半导体芯片以使第一半导体芯片与接触单元紧密接触;在第一半导体芯片上布置第二半导体芯片,以便第一半导体芯片的多个第一端子与第二半导体芯片的多个第二端子面向彼此;以及加热第二半导体芯片并且利用头部对第一半导体芯片加压,以使多个第一端子与多个第二端子接合。
发明效果
根据本申请,可以向半导体芯片施加均匀的压力。
附图说明
[图1]图1是半导体安装设备的配置图。
[图2]图2是头部的剖视图。
[图3]图3是临时放置台的剖视图。
[图4]图4是临时放置台的剖视图。
[图5]图5是临时放置台的剖视图。
[图6]图6是头部和临时放置台的剖视图。
[图7]图7是头部和临时放置台的剖视图。
[图8]图8是头部的剖视图。
[图9]图9是用于制造叠层芯片的方法的处理图。
[图10]图10是用于制造叠层芯片的方法的处理图。
[图11]图11是用于制造叠层芯片的方法的处理图。
[图12]图12是用于接合半导体芯片的方法的说明视图。
[图13]图13是用于接合半导体芯片的方法的说明视图。
[图14]图14是用于接合半导体芯片的方法的说明视图。
[图15]图15是用于接合半导体芯片的方法的说明视图。
[图16]图16是用于接合半导体芯片的方法的说明视图。
[图17]图17是用于接合半导体芯片的方法的说明视图。
具体实施方式
当半导体芯片101A具有按照设计的光洁度(finish)时,半导体芯片101A的上表面(半导体芯片101A的与形成有端子的表面相反的表面)是平坦的。此外,当在半导体芯片101A上形成的多个端子104A具有按照设计的光洁度时,多个端子104A按高度对齐。如图14所示,当半导体芯片101A的上表面是平坦的并且多个端子104A按照高度对齐时,即使当半导体芯片101A的上表面被吸取到头部201上时,多个端子104A的上表面仍互相平行对齐。半导体芯片101A的端子104A的上表面与半导体芯片101B相对。
如图16所示,存在半导体芯片101A中的厚度变化、端子104A中的高度变化以及半导体芯片101A中的弯曲。如图17所示,当半导体芯片101A的上表面被吸取到头部201上时,半导体芯片101A的上表面变平。然而,多个端子104A的上表面不再互相平行对齐。因此,半导体芯片101A的端子104A与半导体芯片101B的端子104B之间的距离在半导体芯片101A的中心部分与外周部分之间不同。
当半导体芯片101A的外部尺寸为10平方毫米或者更小时,在半导体芯片101A的端子104A与半导体芯片101B的端子104B之间的距离方面,半导体芯片101A的中心部分与外周部分之间的差别较小。因此,作为端子104A的焊料103A坍塌(collapse)的结果,可以使半导体芯片101A的端子104A与半导体芯片101B的端子104B接合。
另一方面,当半导体芯片101A的外部尺寸是20平方毫米或者更大时,在半导体芯片101A的端子104A与半导体芯片101B的端子104B之间的距离方面,半导体芯片101A的中心部分与外周部分之间的差别较大。因此,只要头部201吸附半导体芯片101A,其中半导体芯片101A的上表面保持平坦,则即使当半导体芯片101A上的压力(负荷)增加时,半导体芯片101A的多个端子104A中的所有端子也不可以接合至半导体芯片101B的多个端子104B。此外,用于使半导体芯片101A的端子104A与半导体芯片101B的端子104B接合的压力与半导体芯片101A的尺寸成比例地增加。因此,简单地增加压力可能引起对半导体芯片101A的物理性破坏。
在下文中,将参照附图来详细描述实施方式。实施方式的配置仅是示例,并且因此,本申请不限于实施方式的这些配置。
图1是半导体安装设备1的配置图。半导体安装设备1又被称作倒装芯片焊接机。半导体安装设备1包括:头部2;临时放置台3;保持台4;结合(bond)工具5;以及控制单元6。头部2附接至结合工具5,并且例如通过结合工具5来升高、降低以及平行移动头部2。临时放置台3是在以头部2支持上侧半导体芯片时临时放置有上侧半导体芯片的台体。当层叠多个半导体芯片时,通过头部2来支持被层叠的半导体芯片的最上面,而通过支持台4来支持被层叠的半导体芯片的最下面。此外,支持台4加热最下面的半导体芯片。
控制单元6包括未示出的中央处理单元(CPU)和存储器,以根据可执行地部署在该存储器中的计算机程序来控制由头部2、临时放置台3、支持台4以及结合工具5承担的操作和处理。CPU又被称作处理器。然而,CPU不限于单个处理器,也可以是多处理器。存储器例如包括ROM(只读存储器)和RAM(随机存取存储器)。
图2是头部2的剖视图。头部2包括支持单元21、加热器22、隔膜23、弹性体24以及吸取孔25。支持单元21支持加热器22、隔膜23和弹性体24。在头部2的底面和侧面上形成开口。吸取孔25穿过支持单元21、加热器22、隔膜23和弹性体24,以连接至头部2的底面和侧面上形成的开口。吸取单元(吸取机构)26连接至头部2的侧面上形成的开口。于是,吸取孔25连接至吸取单元26。驱动吸取单元26以从吸取孔25吸取半导体芯片11A,从而使得半导体芯片11A吸附至头部2的底面上。吸取单元26例如是真空吸取泵。
在图2中示出的头部2的结构示例中,头部2包括一个吸取孔25。然而,头部2不限于图2中示出的结构示例。头部2可以包括多个吸取孔25。在该情况下,多个吸取孔25中的每一个连接至吸取单元26。例如,位于头部2的中心部分中的至少一个吸取孔25可以吸取半导体芯片11A的中心部分,并且位于头部2的外周部分中的至少一个吸取孔25可以吸取半导体芯片11A的外周部分。在图2中示出的头部2的结构示例中,吸取单元26被布置在头部2的外部。然而,头部2不限于图2中示出的结构示例。吸取单元26可以被布置在头部2的内部。因此,头部2可以包括吸取单元26。
加热器22是加热单元(加热机构)。加热器22加热半导体芯片11A。由加热器22产生的热量通过隔膜23和弹性体24传递至半导体芯片11A。因此,隔膜23和弹性体24优选地具有高的耐热性。例如,隔膜23和弹性体24可以具有200℃或者更高的耐热性。
通过布置在隔膜23的侧表面上的阀27将液体或气体从供给单元(馈给机构)28提供到隔膜23中。隔膜23因此存储液体或者气体。存储(填充)在隔膜23内的液体例如是易熔合金或者油。存储(填充)在隔膜23内的气体例如是空气。隔膜23由弹性材料形成。弹性体24位于隔膜23的底部上。弹性体24例如是硅橡胶。隔膜23根据填充在隔膜23内的液体或者气体的量(体积、压力等)而变形。弹性体24根据隔膜23的变形而变形。即,隔膜23根据填充在隔膜23内的液体或气体的量来变形,并且弹性体24同样如此。隔膜23是存储单元的一个示例。弹性体24是接触单元的一个示例。
<对半导体芯片的支持>
将参考图3至图8来描述通过头部2对半导体芯片11A的支持。图3和图4是临时放置台3的剖视图。临时放置台3是在通过头部2来支持半导体芯片11A之前临时放置半导体芯片11A的台体。临时放置台3包括台体(板体)31、支持单元32以及吸取孔33。支持单元32支持台体31。临时放置台3还包括安装表面3A,在该安装表面3A上放置半导体芯片11A。在安装表面3A和临时放置台3的侧面上形成开口。吸取孔33穿过台体31和支持单元32,以连接至安装表面3A和临时放置台3的侧面上形成的开口。吸取单元(吸取机构)34连接至临时放置台3的侧面上形成的开口。因此,吸取孔33连接至吸取单元34。吸取单元34例如是真空吸取泵。
在半导体芯片11A上形成端子(微凸块)14A。端子14A包括铜柱(铜桩或铜墩)12A以及在铜柱12A的顶部上形成的焊料13A。半导体芯片11A包括:多个端子14A;表面(端子形成表面)15A,在其上形成多个端子14A;以及与端子形成表面15A相反的表面(背面)16A。图3中示出的半导体芯片11A的背面16A具有凹圆弧形,并且半导体芯片11A的多个端子14A未按照高度对齐。因此,半导体芯片11A的多个端子14A的上表面17A未互相平行对齐。半导体芯片11A的端子14A的上表面17A和端子形成表面15A面向相同的方向,并且与图3中的临时放置台3的安装表面3A相对。驱动吸取单元34以从吸取孔33吸取半导体芯片11A的端子形成表面15A,从而使得半导体芯片11A被吸附至临时放置台3的安装表面3A上。可以在半导体芯片11A被放置在临时放置台3的安装表面3A上之前通过吸取单元34来执行吸取。替选地,可以在半导体芯片11A被放置在临时放置台3的安装表面3A上之后通过吸取单元34来执行吸取。
吸取单元34从半导体芯片11A的端子形成表面15A侧吸取半导体芯片11A,以便多个端子14A的上表面17A中的每一个与临时放置台3的安装表面3A之间的距离相同。通过控制单元6来控制通过吸取单元34的吸取的力量。如图4所示,作为半导体芯片11A从半导体芯片11A的端子形成表面15A侧被吸取的结果,多个端子14A的上表面17A互相平行对齐。在图4中,由于多个端子14A的上表面互相平行对齐,因此多个端子14A中的所有端子均与临时放置台3的安装表面3A相接触。
图3和图4图示了未在半导体芯片11A的端子形成表面15A上形成增强型树脂的示例。替选地,如图5所示,可以在半导体芯片11A的端子形成表面15A上形成增强型树脂18A。图5是临时放置台3的剖视图。增强型树脂18A是膜NCF。吸取单元34从半导体芯片11A的端子形成表面15A侧吸取半导体芯片11A和增强型树脂18A,以便多个端子14A的上表面17A中的每一个与临时放置台3的安装表面3A之间的距离相同。通过控制单元6来控制通过吸取单元34的吸取的力量。如图5所示,作为半导体芯片11A和增强型树脂18A从半导体芯片11A的端子形成表面15A侧被吸取的结果,多个端子14A的上表面17A互相平行对齐。
在图3至图5中所示的临时放置台3的结构示例中,临时放置台3包括一个吸取孔33。然而,临时放置台3不限于图3至图5中所示的结构示例。临时放置台3可以包括多个吸取孔33。在该情况下,多个吸取孔33中的每一个连接至吸取单元34。例如,位于临时放置台3的中心部分中的至少一个吸取孔33可以吸取半导体芯片11A的中心部分,并且位于临时放置台3的外周部分中的至少一个吸取孔33可以吸取半导体芯片11A的外周部分。在图3至图5中所示的临时放置台3的结构示例中,吸取单元34被布置在临时放置台3的外部。然而,临时放置台3不限于图3至图5中示出的结构示例。吸取单元34可以被布置在临时放置台3的内部。因此,临时放置台3可以包括吸取单元34。
通过结合工具5来降低头部2,同时直到头部2马上与半导体芯片11A相接触之前一直保持半导体芯片11A被吸附到临时放置台3的安装表面3A上这一状况。如图6所示,降低头部2以将头部2布置在半导体芯片11A上。因此,隔膜23和弹性体24被布置在半导体芯片11A的背面16A上。应该注意的是,可以在半导体芯片11A的端子形成表面15A上形成增强型树脂18A。
接下来,打开布置在隔膜23的侧面上的阀27以将液体或气体从供给单元28提供到隔膜23中,以便向隔膜23填充液体或者气体。如图7所示,当隔膜23充满液体或者气体时,隔膜23的中心部分向半导体芯片11A隆起。因此,弹性体24的中心部分向半导体芯片11A弯曲,从而使得弹性体24与半导体芯片11A的背面16A相接触。如上所述,当隔膜23充满液体或者气体时,隔膜23和弹性体24变形,从而使得弹性体24与半导体芯片11A的背面16A相接触。当弹性体24与半导体芯片11A的背面16A相接触时,隔膜23和弹性体24根据半导体芯片11A的背面16A的形状而变形。例如,当半导体芯片11A的背面16A具有凹圆弧形时,隔膜23和弹性体24变形成与半导体芯片11A的背面16A相符的凹圆弧形。
当弹性体24根据半导体芯片11A的背面16A的形状而变形时,关闭布置在隔膜23的侧面上的阀27,以防止填充在隔膜23内的液体或者气体的量变化。通过控制单元6来控制阀27的打开和闭合。例如,当达到目标填充量时,可以调整填充在隔膜23内的液体或者气体的量,以关闭布置在隔膜23的侧面的阀27。替选地,可以将隔膜23和弹性体24根据半导体芯片11A的背面16A的形状而变形时的填充量限定为目标填充量。关于目标填充量的数据被存储于控制单元6中。
接下来,吸取单元26执行吸取,以从吸取孔25吸取半导体芯片11A。因此,半导体芯片11A的背面16A吸附至弹性体24,并且因此,弹性体24与半导体芯片11A的背面16A彼此紧密接触。因此,在隔膜23和弹性体24已经根据半导体芯片11A的背面16A的形状而变形的情况下,半导体芯片11A的背面16A与弹性体24紧密接触。吸取单元26是吸取单元的一个示例。尽管图3至图7中示出的半导体芯片11A的背面16A具有凹圆弧形,但是在一些情况下,每个半导体芯片11A的背面16A可以具有凸圆弧形。即使当半导体芯片11A的背面16A具有凸圆弧形时,隔膜23和弹性体24也会根据半导体芯片11A的背面16A的形状而变形。因此,弹性体24和半导体芯片11A的背面16A彼此紧密接触。例如,当半导体芯片11A的背面16A具有凸圆弧形时,隔膜23和弹性体24变形成与半导体芯片11A的背面16A相符的凸圆弧形。
随后,通过结合工具5来升高头部2,以提升放置在临时放置台3上的半导体芯片11A。如图8所示,即使当将从临时放置台3移开半导体芯片11A时,弹性体24和半导体芯片11A的背面16A仍保持彼此紧密接触。作为结果,半导体芯片11A的背面16A在多个端子14A的上表面17A彼此平行对齐的情况下吸附至弹性体24。应该注意的是,当提升半导体芯片11A时,可以停止通过吸取单元34的吸取处理。
半导体芯片11A的厚度和弯曲针对每个晶片批次(lot)可能出现变化。此外,每个端子14A的高度可能变化。根据按照实施方式的半导体安装设备1和头部2,弹性体24在形状方面依照半导体芯片11A的背面16A的形状而变化,其中多个端子14A的上表面17A互相平行对齐。因此,可以在保持多个端子14A的上表面17A互相平行对齐的状况的同时保持弹性体24和半导体芯片11A的背面16A彼此紧密接触的状况。因此,即使当晶片批次或者芯片规格变化时,头部2也可以使半导体芯片11A保持在多个端子14A的上表面17A互相平行对齐的状况下,而无需替换头部2、结合工具5等。
在图2以及图6至图8中示出的头部2的结构示例中,弹性体24被布置在隔膜23的底部。然而,头部2不限于图2以及图6至图8中示出的结构示例。不需要将弹性体24布置在头部2中。即使在该情况下,隔膜23仍根据半导体芯片11A的背面16A的形状而变形,并且因此,隔膜23和半导体芯片11A的背面16A彼此紧密接触。从而,头部2可以使半导体芯片11A保持在多个端子14A的上表面17A互相平行对齐的状况下。可以使隔膜23和弹性体24彼此成为整体。
<用于制造叠层芯片的方法>
将参照图9至图11来描述用于制造叠层芯片(半导体装置)的方法。在用于制造叠层芯片的方法中,头部2支持半导体芯片11A的处理与参照图3至图8所描述的处理是相同的,并且因此,将不会在此处讨论。因此,在此处将讨论在头部2支持半导体芯片11A的处理之后的处理。
如图9所示,半导体芯片11B被放置在支持台4上。图9是支持台4的剖视图。支持台4包括台体(板体)41、加热器42、支持单元43以及吸取孔44。支持台4是加热台的一个示例。支持单元43支持台体41和加热器42。支持台4还包括安装表面4A,在该安装表面4A上放置半导体芯片11B。在安装表面4A和支持台4的侧面上形成开口。吸取孔44穿过台体41、加热器42和支持单元43,以连接至安装表面4A和支持台4的侧面上形成的开口。吸取单元(吸取机构)45连接至支持台4的侧面上形成的开口。因此,吸取孔44连接至吸取单元45。吸取单元45例如是真空吸取泵。
在半导体芯片11B上形成端子(微凸块)14B。端子14B包括铜柱12B以及在铜柱12B的顶部上形成的焊料13B。此外,在半导体芯片11B上形成增强型树脂18B。增强型树脂18B可以是膜NCF或者膏NCP。当在半导体芯片11A上形成增强型树脂18A时,不需要在半导体芯片11B上形成增强型树脂18B。半导体芯片11B包括:多个端子14B;表面(端子形成表面)15B,在其上形成多个端子14B;以及与端子形成表面15B相反的表面(背面)16B。在支持台4上支持半导体芯片11B,以便半导体芯片11B的背面16B与支持台4的安装表面4A面向彼此。
驱动吸取单元45以从吸取孔44吸取半导体芯片11B,从而使得半导体芯片11B吸附到支持台4的安装表面4A上。可以在半导体芯片11B被放置在支持台4的安装表面4A上之前执行通过吸取单元45的吸取。替选地,可以在半导体芯片11B被放置在支持台4的安装表面4A上之后执行通过吸取单元45的吸取。应该注意的是,可以在支持半导体芯片11A的处理之前实施图9中示出的支持半导体芯片11B的处理。
接下来,通过结合工具5来移动头部2以将半导体芯片11A定位于半导体芯片11B的上面。在该情况下,如图10所示,定位半导体芯片11A以便半导体芯片11A的端子形成表面15A与半导体芯片11B的端子形成表面15B面向彼此。随后,使用未示出的识别摄像机来使半导体芯片11A与半导体芯片11B对齐。作为半导体芯片11A与半导体芯片11B被对齐的结果,半导体芯片11A的多个端子14A与半导体芯片11B的多个端子14B面向彼此。之后,通过结合工具5来降低头部2。当降低头部2时,载荷被施加于半导体芯片11A以对半导体芯片11A执行加压处理。由于弹性体24和半导体芯片11的背面16A彼此紧密接触,因此可以对半导体芯片11A施加均匀的压力。
当通过头部2对半导体芯片11A执行加压处理时,加热器22和加热器42开始加热处理。升高加热器42的加热温度以对半导体芯片11B执行加热处理。即,由加热器42产生的热量传递至台体41以加热半导体芯片11B。作为半导体芯片11B被加热的结果,热量从半导体芯片11B传递至增强型树脂18B。作为增强型树脂18B被加热的结果,增强型树脂18B软化。作为在增强型树脂18B变软的同时半导体芯片11A被加压的结果,半导体芯片11A的端子14A埋入(bury)增强型树脂18B中,以冲破增强型树脂18B。由于弹性体24和半导体芯片11A的背面16A彼此紧密接触,所以可以对半导体芯片11A施加均匀的压力。作为结果,半导体芯片11A的端子14A可以轻松地冲破增强型树脂18B。如图11所示,作为半导体芯片11A的端子14A冲破增强型树脂18B的结果,半导体芯片11A的端子14A与半导体芯片11B的端子14B彼此接触。
升高加热器22的加热温度以对半导体芯片11A执行加热处理。通过加热器22来对半导体芯片11A执行加热处理,以防止从加热器42传递至半导体芯片11B和增强型树脂18B的热量通过半导体芯片11A被消散。即,加热器22对半导体芯片11A执行热量保持。通过加热器22对半导体芯片11A执行的加热处理可能引起填充在隔膜23中的液体或气体的量发生变化。在该情况下,可以打开或者关闭布置在隔膜23的侧面上的阀27以调整填充在隔膜23中的液体或者气体的量。替选地,可以在支持单元21与隔膜23之间布置隔热材料以代替加热器22。
可以在半导体芯片11A和11B的加热处理开始之后开始半导体芯片11A的加压处理。替选地,可以在半导体芯片11A的加压处理开始之后开始半导体芯片11A和11B的加热处理。这样,可以使半导体芯片11A和11B的加热处理的起始点与半导体芯片11A的加压处理的起始点彼此不同。又替选地,可以同时开始半导体芯片11A的加压处理和半导体芯片11B的加热处理。再替选地,可以使半导体芯片11A的加热处理的起始点与半导体芯片11B的加热处理的起始点彼此不同。再替选地,可以同时开始半导体芯片11A的加热处理和半导体芯片11B的加热处理。
加热器42将焊料13A和13B的加热温度提高到焊料13A和13B的熔化温度。通过使焊料13A和13B因此熔化来将焊料13A和13B接合在一起。作为结果,半导体芯片11A的端子14A与半导体芯片11B的端子14B被接合,从而保证半导体芯片11A与半导体芯片11B之间的电传导以及芯片的刚性。以这种方式来制造设置有半导体芯片11A和11B的叠层芯片。
不需要形成增强型树脂18A和18B。在该情况下,在半导体芯片11A的端子14A与半导体芯片11B的端子14B被接合之后,使用分配器来在半导体芯片11A与半导体芯片11B之间填充底层填料(underfill)。
在图9和图10中示出的支持台4的结构示例中,支持台4包括一个吸取孔44。然而,支持台4不限于图9和图10中示出的支持台4的结构示例。支持台4可以包括多个吸取孔44。在该情况下,多个吸取孔44中的每一个连接至吸取单元45。例如,位于支持台4的中心部分中的至少一个吸取孔44可以吸取半导体芯片11B的中心部分,并且位于支持台4的外周部分中的至少一个吸取孔44可以吸取半导体芯片11B的外周部分。在图9和图10中示出的支持台4的结构示例中,吸取单元45被布置在支持台4的外部。然而,支持台4不限于图9和图10中示出的结构示例。吸取单元45可以被布置在支持台4的内部。从而,支持台4可以包括吸取单元45。
根据按照实施方式的半导体安装设备1,调整填充在隔膜23中的液体或气体的量,以使得隔膜23和弹性体24根据半导体芯片11A的背面16A的形状而变形。即,隔膜23和弹性体24在形状方面依据半导体芯片11A的背面16A的形状而变化。因此,弹性体24和半导体芯片11A的背面16A彼此紧密接触。作为结果,当头部2对半导体芯片11A执行加压处理时,可以对半导体芯片11A施加均匀的压力。
根据按照实施方式的半导体安装设备1,可以在半导体芯片11A的多个端子14A的上表面17A互相平行对齐的情况下对半导体芯片11A执行加压处理。因此,即使当在半导体芯片11A、端子14A和半导体芯片11A中分别存在厚度变化、高度变化和弯曲时,也可以将半导体芯片11A的多个端子14A中的全部端子接合至半导体芯片11B的多个端子14B。如上所述,根据按照实施方式的半导体安装设备1,可以通过使半导体芯片11A的多个端子14A的上表面17A互相平行对齐来消减半导体芯片11A的厚度变化、端子14A的高度变化以及半导体芯片11A的弯曲。
1 半导体安装设备
2 头部
3 临时放置台
4 支持台
5 结合工具
6 控制单元
11,11A,11B 半导体芯片
14A,14B 端子
21,31,43 支持单元
22,42 加热器
23 隔膜
24 弹性体
25,33,44 吸取孔
26,34,45 吸取单元
27 阀
28 供给单元
31,41 台体
Claims (12)
1.一种半导体安装设备,包括:
存储单元,其存储液体或者气体;
接触单元,其在所述存储单元充满所述液体或者所述气体时与半导体芯片相接触;以及
吸取单元,其吸取所述半导体芯片以使所述半导体芯片与所述接触单元紧密接触。
2.根据权利要求1所述的半导体安装设备,
其中,所述半导体芯片包括:多个端子;端子形成表面,在其上形成所述多个端子;以及相反表面,其位于所述端子形成表面的相反侧上,并且
在所述接触单元根据所述相反表面的形状而变形的情况下,所述相反表面与所述接触单元紧密接触。
3.根据权利要求2所述的半导体安装设备,
其中,所述接触单元按照所述相反表面变形成凹圆弧形或者凸圆弧形。
4.根据权利要求1至3中任一项所述的半导体安装设备,包括:
吸取单元,其从所述半导体芯片的形成有多个端子的端子形成表面侧吸取所述半导体芯片,以使所述多个端子的上表面互相平行对齐。
5.根据权利要求1至3中任一项所述的半导体安装设备,包括:
加热台,在其上安装有与所述半导体芯片相对的第二半导体芯片,并且所述加热台加热所述第二半导体芯片。
6.一种半导体安装设备的头部,包括:
存储单元,其存储液体或者气体;
接触单元,其在所述存储单元充满所述液体或者所述气体时与半导体芯片相接触;以及
吸取单元,其吸取所述半导体芯片以使所述半导体芯片与所述接触单元紧密接触。
7.根据权利要求6所述的半导体安装设备的头部,
其中,所述半导体芯片包括:多个端子;端子形成表面,在其上形成所述多个端子;以及相反表面,其位于所述端子形成表面的相反侧上,并且
在所述接触单元根据所述相反表面的形状而变形的情况下,所述相反表面与所述接触单元紧密接触。
8.根据权利要求7所述的半导体安装设备的头部,
其中,所述接触单元按照所述相反表面变形成凹圆弧形或者凸圆弧形。
9.一种用于制造叠层芯片的方法,包括:
在第一半导体芯片上布置头部,所述头部包括:存储单元,其存储液体或者气体;以及接触单元,其在所述存储单元充满所述液体或所述气体时与所述第一半导体芯片相接触;
用所述液体或所述气体来填充所述存储单元;
吸取所述第一半导体芯片以使所述第一半导体芯片与所述接触单元紧密接触;
在所述第一半导体芯片上布置第二半导体芯片,以便所述第一半导体芯片的多个第一端子与所述第二半导体芯片的多个第二端子面向彼此;以及
加热所述第二半导体芯片并且利用所述头部来对所述第一半导体芯片加压,以使所述多个第一端子与所述多个第二端子接合。
10.根据权利要求9所述的用于制造叠层芯片的方法,
其中,所述第一半导体芯片包括:端子形成表面,在其上形成所述多个第一端子;以及相反表面,其位于所述端子形成表面的相反侧上,并且在所述接触单元按照所述相反表面的形状而变形的情况下,所述相反表面与所述接触单元紧密接触。
11.根据权利要求10所述的用于制造叠层芯片的方法,
其中,所述接触单元按照所述相反表面变形成凹圆弧形或凸圆弧形。
12.根据权利要求9至11中任一项所述的用于制造叠层芯片的方法,包括:
在布置之前,从所述第一半导体芯片的形成有所述多个第一端子的端子形成表面侧吸取所述第一半导体芯片,以使所述多个第一端子的上表面互相平行对齐。
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- 2016-11-30 KR KR1020160161870A patent/KR101877135B1/ko active IP Right Grant
- 2016-11-30 TW TW105139519A patent/TWI644370B/zh not_active IP Right Cessation
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JP2017120835A (ja) | 2017-07-06 |
US20170186721A1 (en) | 2017-06-29 |
JP6582975B2 (ja) | 2019-10-02 |
TW201735194A (zh) | 2017-10-01 |
KR101877135B1 (ko) | 2018-07-10 |
CN106922087B (zh) | 2019-08-09 |
TWI644370B (zh) | 2018-12-11 |
KR20170077782A (ko) | 2017-07-06 |
US9905528B2 (en) | 2018-02-27 |
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