JP6474014B1 - 撮像装置 - Google Patents

撮像装置 Download PDF

Info

Publication number
JP6474014B1
JP6474014B1 JP2018554794A JP2018554794A JP6474014B1 JP 6474014 B1 JP6474014 B1 JP 6474014B1 JP 2018554794 A JP2018554794 A JP 2018554794A JP 2018554794 A JP2018554794 A JP 2018554794A JP 6474014 B1 JP6474014 B1 JP 6474014B1
Authority
JP
Japan
Prior art keywords
voltage
transistor
impurity region
signal
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2018554794A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2019009023A1 (ja
Inventor
嘉晃 佐藤
嘉晃 佐藤
翔太 山田
翔太 山田
雅史 村上
雅史 村上
廣瀬　裕
裕 廣瀬
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Intellectual Property Management Co Ltd
Original Assignee
Panasonic Intellectual Property Management Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Intellectual Property Management Co Ltd filed Critical Panasonic Intellectual Property Management Co Ltd
Application granted granted Critical
Publication of JP6474014B1 publication Critical patent/JP6474014B1/ja
Publication of JPWO2019009023A1 publication Critical patent/JPWO2019009023A1/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/65—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/68—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to defects
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2018554794A 2017-07-05 2018-06-12 撮像装置 Active JP6474014B1 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2017131879 2017-07-05
JP2017131879 2017-07-05
JP2017131878 2017-07-05
JP2017131878 2017-07-05
JP2018104972 2018-05-31
JP2018104972 2018-05-31
PCT/JP2018/022308 WO2019009023A1 (ja) 2017-07-05 2018-06-12 撮像装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2019006947A Division JP7162251B2 (ja) 2017-07-05 2019-01-18 撮像装置

Publications (2)

Publication Number Publication Date
JP6474014B1 true JP6474014B1 (ja) 2019-02-27
JPWO2019009023A1 JPWO2019009023A1 (ja) 2019-07-04

Family

ID=64950868

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2018554794A Active JP6474014B1 (ja) 2017-07-05 2018-06-12 撮像装置
JP2019006947A Active JP7162251B2 (ja) 2017-07-05 2019-01-18 撮像装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2019006947A Active JP7162251B2 (ja) 2017-07-05 2019-01-18 撮像装置

Country Status (4)

Country Link
US (2) US11233958B2 (enExample)
JP (2) JP6474014B1 (enExample)
CN (1) CN109429559B (enExample)
WO (1) WO2019009023A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019009023A1 (ja) * 2017-07-05 2019-01-10 パナソニックＩｐマネジメント株式会社 撮像装置
CN112534802B (zh) * 2018-08-03 2024-04-30 株式会社半导体能源研究所 摄像装置的工作方法
US11025848B2 (en) * 2018-08-31 2021-06-01 Canon Kabushiki Kaisha Photoelectric conversion device, imaging system, moving body, and stackable semiconductor device
US11050956B2 (en) * 2019-03-29 2021-06-29 Pixart Imaging Inc. Image sensor and method for increasing signal-noise-ratio thereof
JP2021057885A (ja) 2019-09-26 2021-04-08 パナソニックＩｐマネジメント株式会社 撮像装置およびその駆動方法
WO2021152943A1 (ja) * 2020-01-30 2021-08-05 パナソニックＩｐマネジメント株式会社 撮像装置
KR20220031402A (ko) * 2020-09-04 2022-03-11 삼성전자주식회사 전자 장치
WO2022153628A1 (ja) * 2021-01-15 2022-07-21 パナソニックＩｐマネジメント株式会社 撮像装置及びカメラシステム

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008252695A (ja) * 2007-03-30 2008-10-16 National Univ Corp Shizuoka Univ イメージセンサのための画素及びイメージセンサデバイス
JP2013175951A (ja) * 2012-02-27 2013-09-05 Honda Motor Co Ltd 画素駆動装置及び画素駆動方法
WO2014112279A1 (ja) * 2013-01-16 2014-07-24 ソニー株式会社 固体撮像素子および電子機器
JP2016063216A (ja) * 2014-09-12 2016-04-25 パナソニックＩｐマネジメント株式会社 撮像装置

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6512544B1 (en) * 1998-06-17 2003-01-28 Foveon, Inc. Storage pixel sensor and array with compression
TW563088B (en) * 2001-09-17 2003-11-21 Semiconductor Energy Lab Light emitting device, method of driving a light emitting device, and electronic equipment
JP3891126B2 (ja) * 2003-02-21 2007-03-14 セイコーエプソン株式会社 固体撮像装置
CN1699936A (zh) * 2004-05-21 2005-11-23 三洋电机株式会社 光量检测电路及使用光量检测电路的显示面板
JP2006042121A (ja) 2004-07-29 2006-02-09 Sharp Corp 増幅型固体撮像装置
JP2009026892A (ja) 2007-07-18 2009-02-05 Nikon Corp 固体撮像素子
JP5251736B2 (ja) * 2009-06-05 2013-07-31 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法および電子機器
WO2011058684A1 (ja) * 2009-11-12 2011-05-19 パナソニック株式会社 固体撮像装置
JP6124217B2 (ja) 2011-04-28 2017-05-10 パナソニックＩｐマネジメント株式会社 固体撮像装置及びそれを用いたカメラシステム
JP6108884B2 (ja) * 2013-03-08 2017-04-05 キヤノン株式会社 光電変換装置及び撮像システム
JP2014175896A (ja) 2013-03-11 2014-09-22 Shimadzu Corp 二次元画像検出器
JP2015149672A (ja) * 2014-02-07 2015-08-20 キヤノン株式会社 光電変換装置及び光電変換システム
JP2016021445A (ja) * 2014-07-11 2016-02-04 キヤノン株式会社 光電変換装置、および、撮像システム
JP6395482B2 (ja) * 2014-07-11 2018-09-26 キヤノン株式会社 光電変換装置、および、撮像システム
JP6425448B2 (ja) * 2014-07-31 2018-11-21 キヤノン株式会社 光電変換装置、および、撮像システム
JP6682175B2 (ja) * 2014-07-31 2020-04-15 キヤノン株式会社 固体撮像素子および撮像システム
US9711558B2 (en) 2014-09-12 2017-07-18 Panasonic Intellectual Property Management Co., Ltd. Imaging device with photoelectric converter
JP2016063142A (ja) * 2014-09-19 2016-04-25 株式会社東芝 半導体装置
CN105742303B (zh) 2014-12-26 2020-08-25 松下知识产权经营株式会社 摄像装置
JP6307771B2 (ja) 2014-12-26 2018-04-11 パナソニックＩｐマネジメント株式会社 撮像装置
JP6587123B2 (ja) 2015-06-08 2019-10-09 パナソニックＩｐマネジメント株式会社 撮像装置
JP6551882B2 (ja) * 2015-06-08 2019-07-31 パナソニックＩｐマネジメント株式会社 撮像装置および信号処理回路
JP2017098809A (ja) * 2015-11-26 2017-06-01 キヤノン株式会社 光電変換装置、および、撮像システム
JP6702711B2 (ja) * 2015-12-17 2020-06-03 キヤノン株式会社 光電変換装置、および、撮像システム
JP2017175345A (ja) 2016-03-23 2017-09-28 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法、及び、電子機器
JP6784609B2 (ja) * 2017-02-24 2020-11-11 キヤノン株式会社 光電変換装置、撮像システム及び移動体
WO2019009023A1 (ja) * 2017-07-05 2019-01-10 パナソニックＩｐマネジメント株式会社 撮像装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008252695A (ja) * 2007-03-30 2008-10-16 National Univ Corp Shizuoka Univ イメージセンサのための画素及びイメージセンサデバイス
JP2013175951A (ja) * 2012-02-27 2013-09-05 Honda Motor Co Ltd 画素駆動装置及び画素駆動方法
WO2014112279A1 (ja) * 2013-01-16 2014-07-24 ソニー株式会社 固体撮像素子および電子機器
JP2016063216A (ja) * 2014-09-12 2016-04-25 パナソニックＩｐマネジメント株式会社 撮像装置

Also Published As

Publication number Publication date
JP7162251B2 (ja) 2022-10-28
US20190238767A1 (en) 2019-08-01
US11678083B2 (en) 2023-06-13
CN109429559B (zh) 2022-06-03
CN109429559A (zh) 2019-03-05
WO2019009023A1 (ja) 2019-01-10
US11233958B2 (en) 2022-01-25
JPWO2019009023A1 (ja) 2019-07-04
US20220109800A1 (en) 2022-04-07
JP2019213188A (ja) 2019-12-12

Similar Documents

Publication Publication Date Title
JP6474014B1 (ja) 撮像装置
US11183524B2 (en) Imaging device and camera system
US12266666B2 (en) Solid-state imaging device
US9961262B2 (en) Solid-state imaging device having a switchable conversion gain in the floating diffusion, method for driving solid-state imaging device, and electronic apparatus
CN101909167B (zh) 固体摄像器件、其驱动方法和包括该器件的电子系统
CN100591090C (zh) 图像传感器中具有低噪声的像素电路
CN107124565B (zh) 摄像装置
JP6827238B2 (ja) 撮像装置
JP2020017724A (ja) 固体撮像装置、固体撮像装置の製造方法、および電子機器
JP5814818B2 (ja) 固体撮像装置
WO2018086342A1 (zh) 像素感应电路及其驱动方法、图像传感器、电子设备
JP2012227889A (ja) 固体撮像装置
JP4672976B2 (ja) 固体撮像装置
JP4746962B2 (ja) 固体撮像装置及び撮像システム
CN119071659A (zh) 固体摄像装置、固体摄像装置的驱动方法以及电子设备

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20181018

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20181018

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20181108

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20181127

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20181206

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20181225

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20190118

R151 Written notification of patent or utility model registration

Ref document number: 6474014

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151