JP6449210B2 - 太陽電池及びその製造方法 - Google Patents
太陽電池及びその製造方法 Download PDFInfo
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- JP6449210B2 JP6449210B2 JP2016208658A JP2016208658A JP6449210B2 JP 6449210 B2 JP6449210 B2 JP 6449210B2 JP 2016208658 A JP2016208658 A JP 2016208658A JP 2016208658 A JP2016208658 A JP 2016208658A JP 6449210 B2 JP6449210 B2 JP 6449210B2
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- 238000004519 manufacturing process Methods 0.000 title description 19
- 239000004065 semiconductor Substances 0.000 claims description 113
- 239000000758 substrate Substances 0.000 claims description 113
- 238000002161 passivation Methods 0.000 claims description 79
- 239000012535 impurity Substances 0.000 claims description 48
- 230000005684 electric field Effects 0.000 claims description 24
- 230000003746 surface roughness Effects 0.000 claims description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 14
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical class [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 6
- 229910001404 rare earth metal oxide Inorganic materials 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 6
- 230000000149 penetrating effect Effects 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical class [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 1
- 238000000034 method Methods 0.000 description 29
- 238000005530 etching Methods 0.000 description 19
- 229910052782 aluminium Inorganic materials 0.000 description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- 229910052581 Si3N4 Inorganic materials 0.000 description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- 229910010413 TiO 2 Inorganic materials 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
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- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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Description
半導体基板10の前面12側には、第2の導電型不純物を有するエミッタ層20が形成され得る。本実施形態においてエミッタ層20は、断面ドーピングにより形成されるが、これについては、後述する。
半導体基板10の前面において、エミッタ層20の上に第1のパッシベーション膜21、反射防止膜22、及び第1の電極24が形成される。
半導体基板10の後面14にレーザーを照射して第1の部分340aが形成される部分で第2のパッシベーション膜32に貫通孔を形成する。その後、第2のパッシベーション膜32の上に第2の電極層340をメッキ、蒸着、スクリーン印刷などの方法により形成することができる。
10 半導体基板
20 エミッタ層
30 後面電界層
21 第1のパッシベーション膜
22 反射防止膜
32 第2のパッシベーション膜
24 第1の電極
34 第2の電極
Claims (6)
- 第1の導電型不純物を有し、前面の表面粗さが後面の表面粗さより大きい半導体基板と、
前記半導体基板の前面に接触形成され、第2の導電型不純物を有するエミッタ層と、
前記半導体基板の後面に接触形成され、前記第1の導電型不純物を有する後面電界層と、
前記半導体基板の前面をパッシベーションする前面パッシベーション膜と、
前記半導体基板の後面をパッシベーションする後面パッシベーション膜と、
前記エミッタ層と電気的に接続される第1の電極と、
前記半導体基板の後面と部分的に接触する第2の電極と、
を備え、
前記半導体基板の前面が1μm以下の表面粗さを有し、
前記後面パッシベーション膜は、前記第1の導電型不純物を含む物質を有し、
前記第2の電極は、前記第1の導電型不純物を有し、
前記第2の電極は、前記後面パッシベーション膜に形成された貫通孔を貫通することによって前記後面電界層に点接触する第1の部分と、前記第1の部分に接続され、前記後面パッシベーション膜の上に形成された第2の部分とを有し、
前記後面電界層は、前記後面パッシベーション膜及び前記第2の電極の全体の上に形成され、
前記第1の部分に対応する前記後面電界層の部分は、前記第2の部分に対応する前記後面電界層の他の部分より前記半導体基板の内側に形成され、
前記後面パッシベーション膜は、前記半導体基板の前記後面に形成されるp型酸化膜と、前記p型酸化膜に形成されるシリコン酸化膜とを含み、
前記p型酸化膜は、希土類酸化物からなる群より選ばれた少なくとも1つの物質を含む、太陽電池。 - 前記半導体基板の前面が300〜600nmの表面粗さを有する、請求項1に記載の太陽電池。
- 前記半導体基板の後面が100nm以下の表面粗さを有する、請求項1に記載の太陽電池。
- 前記第1の導電型不純物は、p型を有し、前記第2の導電型不純物は、n型を有し、前記後面パッシベーション膜は、p型酸化膜を含むことを特徴とする、請求項1に記載の太陽電池。
- 前記p型酸化膜は、希土類酸化物、アルミニウム酸化物、及びジルコニウム酸化物からなる群より選ばれた少なくとも1つの物質を含む、請求項4に記載の太陽電池。
- 前記第2の電極は、前記半導体基板の前記後面電界層に点接触する、請求項1に記載の太陽電池。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR1020110136467A KR101860919B1 (ko) | 2011-12-16 | 2011-12-16 | 태양 전지 및 이의 제조 방법 |
KR10-2011-0136467 | 2011-12-16 |
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JP2017017364A JP2017017364A (ja) | 2017-01-19 |
JP6449210B2 true JP6449210B2 (ja) | 2019-01-09 |
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JP2016208658A Active JP6449210B2 (ja) | 2011-12-16 | 2016-10-25 | 太陽電池及びその製造方法 |
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US (2) | US8969125B2 (ja) |
EP (1) | EP2605290B1 (ja) |
JP (2) | JP6068028B2 (ja) |
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KR101860919B1 (ko) | 2011-12-16 | 2018-06-29 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
KR20130096822A (ko) * | 2012-02-23 | 2013-09-02 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
KR101879781B1 (ko) * | 2012-05-11 | 2018-08-16 | 엘지전자 주식회사 | 태양 전지, 불순물층의 형성 방법 및 태양 전지의 제조 방법 |
TWI492400B (zh) * | 2013-02-21 | 2015-07-11 | 茂迪股份有限公司 | 太陽能電池及其製造方法與太陽能電池模組 |
KR101428396B1 (ko) | 2013-06-17 | 2014-08-08 | 현대자동차주식회사 | 차량용 페달장치 |
KR20150035295A (ko) * | 2013-09-27 | 2015-04-06 | 엘지이노텍 주식회사 | 태양전지 |
EP3050120B1 (en) * | 2013-09-27 | 2023-06-07 | Danmarks Tekniske Universitet | Nanostructured silicon based solar cells and methods to produce nanostructured silicon based solar cells |
DE102013219603A1 (de) * | 2013-09-27 | 2015-04-02 | International Solar Energy Research Center Konstanz E.V. | Verfahren zur Herstellung einer Solarzelle |
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KR102191905B1 (ko) * | 2014-02-24 | 2020-12-16 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
WO2015130672A1 (en) * | 2014-02-28 | 2015-09-03 | Applied Materials, Inc. | Silicon solar cells with epitaxial emitters |
CN104993019A (zh) * | 2015-07-09 | 2015-10-21 | 苏州阿特斯阳光电力科技有限公司 | 一种局部背接触太阳能电池的制备方法 |
WO2017222537A1 (en) * | 2016-06-23 | 2017-12-28 | Sunpower Corporation | Surface passivation for solar cells |
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EP2605290B1 (en) | 2019-02-27 |
KR20130068968A (ko) | 2013-06-26 |
JP2017017364A (ja) | 2017-01-19 |
US20130153018A1 (en) | 2013-06-20 |
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