JP6363685B2 - 液晶表示装置 - Google Patents
液晶表示装置 Download PDFInfo
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- JP6363685B2 JP6363685B2 JP2016239062A JP2016239062A JP6363685B2 JP 6363685 B2 JP6363685 B2 JP 6363685B2 JP 2016239062 A JP2016239062 A JP 2016239062A JP 2016239062 A JP2016239062 A JP 2016239062A JP 6363685 B2 JP6363685 B2 JP 6363685B2
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- 239000004973 liquid crystal related substance Substances 0.000 title claims description 53
- 230000001681 protective effect Effects 0.000 claims description 104
- 229910052751 metal Inorganic materials 0.000 claims description 68
- 239000002184 metal Substances 0.000 claims description 68
- 239000004020 conductor Substances 0.000 claims description 30
- 239000010949 copper Substances 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 22
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 21
- 229910052802 copper Inorganic materials 0.000 claims description 20
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 10
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 9
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 76
- 239000013256 coordination polymer Substances 0.000 description 46
- 238000000034 method Methods 0.000 description 22
- 238000005530 etching Methods 0.000 description 17
- 239000010409 thin film Substances 0.000 description 17
- 230000005684 electric field Effects 0.000 description 14
- 239000007769 metal material Substances 0.000 description 14
- 239000000463 material Substances 0.000 description 12
- 238000001312 dry etching Methods 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 238000002834 transmittance Methods 0.000 description 5
- 239000010936 titanium Substances 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
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- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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Description
一例として、第1保護膜上に配置され、共通パッドに接続される共通電極、及び第2保護膜上に配置され、前記共通電極と重なり、複数の線分形状を有する画素電極をさらに含む。
Claims (7)
- 基板と、
前記基板上に配置されたゲートパッドと、
前記ゲートパッドを覆うゲート絶縁膜と、
前記ゲート絶縁膜上に配置されたデータパッドと、
前記データパッドを覆う第1保護膜と、
前記第1保護膜上に配置された共通パッドと、
前記共通パッド上に配置された保護金属層と、
前記共通パッドを覆う第2保護膜と、
前記ゲートパッドの一部を露出するゲートコンタクト孔と、
前記データパッドの一部を露出するデータコンタクト孔と、
前記保護金属層の一部を露出する共通コンタクト孔とを含み、
前記保護金属層は、
前記共通パッド上に互いに離隔して配置された複数の単位保護金属層を含み、
前記共通コンタクト孔は、
複数の前記単位保護金属層を各々露出する単位共通コンタクト孔複数を含む液晶表示装置。 - 前記単位保護金属層は、
前記単位共通コンタクト孔より大きな大きさを有する請求項1に記載の液晶表示装置。 - 前記ゲートパッドは、ゲート配線の一側端部に配置され、
前記データパッドは、データ配線の一側端部に配置され、
前記共通パッドは、共通配線の一側端部に配置される請求項1に記載の液晶表示装置。 - 前記共通パッドは、
インジウム−錫酸化物及びインジウム−亜鉛酸化物のうち、少なくとも何れか一つを含む透明導電物質からなり、
前記保護金属層は、
前記透明導電物質より抵抗の低い導電物質をさらに含む請求項1に記載の液晶表示装置。 - 前記保護金属層は、
銅及び銅合金のうち、何れか一つからなる金属物質を含む請求項4に記載の液晶表示装置。 - 前記ゲートコンタクト孔を介して前記ゲートパッドの一部と接触するゲートパッド端子と、
前記データコンタクト孔を介して、前記データパッドの一部と接触するデータパッド端子と、
前記共通コンタクト孔を介して、前記保護金属層の一部と接触する共通パッド端子とをさらに含む請求項1に記載の液晶表示装置。 - 前記第1保護膜上に配置され、前記共通パッドに接続する共通電極と、
前記第2保護膜上に配置され、前記共通電極と重なり、複数の線分形状を有する画素電極とをさらに含む請求項1に記載の液晶表示装置。
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