CN106918958A - 边缘场切换型液晶显示器 - Google Patents

边缘场切换型液晶显示器 Download PDF

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CN106918958A
CN106918958A CN201611209027.7A CN201611209027A CN106918958A CN 106918958 A CN106918958 A CN 106918958A CN 201611209027 A CN201611209027 A CN 201611209027A CN 106918958 A CN106918958 A CN 106918958A
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public
liquid crystal
pads
metal layer
pad
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CN106918958B (zh
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权当
孙正浩
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LG Display Co Ltd
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LG Display Co Ltd
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    • G—PHYSICS
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
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    • G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
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    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
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    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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    • G—PHYSICS
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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Abstract

本公开内容涉及一种边缘场型液晶显示器。本公开内容提出了一种边缘场型液晶显示器，包括：基板；设置在所述基板上的栅极焊盘；栅极绝缘层，所述栅极绝缘层覆盖所述栅极焊盘；设置在所述栅极绝缘层上的数据焊盘；覆盖所述数据焊盘的第一钝化层；设置在所述第一钝化层上的公共焊盘；保护金属层，所述保护金属层保护所述公共焊盘免受蚀刻剂影响并且所述保护金属层设置在所述公共焊盘上；覆盖所述公共焊盘的第二钝化层；暴露所述栅极焊盘的栅极焊盘接触孔；暴露所述数据焊盘的数据焊盘接触孔；和暴露所述保护金属层的公共焊盘接触孔。

Description

边缘场切换型液晶显示器
技术领域
本公开内容涉及一种液晶显示器，尤其涉及一种边缘场切换型液晶显示器。尽管本公开内容适用于更宽的应用范围，但其特别适用于当在蚀刻工艺中透明导电层被暴露以与金属层连接时，防止对透明导电层的损坏。
背景技术
如今，随着信息社会发展，对呈现信息的显示器的需求逐渐增加。因此，开发了各种平板显示器(或“FPD”)来克服阴极射线管(或“CRT”)的一些缺点，比如重量重和体积庞大。平板显示装置包括液晶显示装置(或“LCD”)、场发射显示器(或“FED”)、等离子体显示面板(或“PDP”)、有机发光显示装置(或“OLED”)和电泳显示装置(或“ED”)。
平板显示器的显示面板包括具有薄膜晶体管的薄膜晶体管基板，薄膜晶体管分配在以矩阵方式排列的每个像素区域中。例如，液晶显示装置通过电场控制液晶层的光透射率来呈现视频数据。根据电场的方向，LCD能够分为两种主要类型，一种是垂直电场型，另一种是水平电场型。
对于垂直电场型LCD来说，位于上基板上的公共电极和位于下基板上的像素电极彼此面对，用来形成具有垂直于基板的方向的电场。设置在上基板与下基板之间的扭曲向列(TN)液晶层被垂直电场驱动。垂直电场型LCD具有开口率较高的优点，但其具有大约90度的较窄视角的缺点。
对于水平电场型LCD来说，公共电极和像素电极平行地形成在同一基板上。设置在上基板与下基板之间的液晶层被平行于基板的电场以面内切换(或“IPS”)模式驱动。水平电场型LCD具有160度以上的较宽视角以及比垂直电场型LCD更快的响应速度等优点。然而，水平电场型LCD可具有诸如低开口率和背光的低透射率之类的缺点。
在IPS模式LCD中，例如，为了形成面内电场，公共电极与像素电极之间的间隙可大于上基板与下基板之间的间隙(或“单元间隙(cellgap)”)，并且为了得到足够的电场强度，公共电极和像素电极需要由具有一定宽度的条纹图案形成。在IPS模式LCD的像素电极与公共电极之间形成相对于基板平行的电场。然而，在像素电极和公共电极正上方没有电场。就是说，设置在像素电极和公共电极正上方的液晶分子不能被驱动而保持初始状态(即，初始取向方向)。由于初始状态中的液晶分子不能适当控制光透射率，所以开口率和亮度会劣化。
为了解决IPS模式LCD的这些缺点，已提出了通过边缘电场驱动的边缘场切换(或“FFS”)型LCD。FFS型LCD包括公共电极和像素电极，并且在公共电极与像素电极之间具有绝缘层。像素电极和公共电极在垂直方向上交叠。亦或，像素电极和公共电极彼此不交叠而是彼此分开一间隙，该间隙设定为比上基板与下基板之间的间隙窄。这样，在公共电极与像素电极之间的空间中以及在这些电极上方形成具有抛物线形状的边缘电场。因此，设置在上基板与下基板之间的大部分液晶分子能够被边缘场驱动。结果，能够提高开口率和前方亮度。
对于边缘场型液晶显示器来说，公共电极和像素电极彼此靠近地或以交叠的方式设置，使得在公共电极与像素电极之间形成存储电容器(storagecapacitor)。因此，边缘场型液晶显示器具有在像素区域中不存在形成存储电容器所需的额外空间的优点。然而，当利用边缘场型形成大面积显示器时，像素区域变得更大且存储电容器也变得更大。在这种情形中，薄膜晶体管也应当具有更大尺寸来在短时间段将扩大的存储电容器驱动/充电。
为解决此问题，应用具有金属氧化物半导体材料的薄膜晶体管，因为其在不增大薄膜晶体管的尺寸的情况下具有较高的电流控制特性。图1是图解根据相关技术的边缘场型液晶显示器中包括的具有氧化物半导体层的薄膜晶体管基板的平面图。图2是图解根据相关技术的沿线I-I’截取的图1的薄膜晶体管基板的结构的剖面图。
图1和2中所示的具有金属氧化物半导体层的薄膜晶体管基板包括在下基板SUB上彼此交叉且在之间具有栅极绝缘层GI的栅极线GL和数据线DL、以及形成在每个交叉部分处的薄膜晶体管T。通过栅极线GL和数据线DL的交叉结构，限定像素区域。
薄膜晶体管T包括从栅极线GL分支(或“伸出”)的栅极电极G、从数据线DL分支的源极电极S、面对源极电极S并连接至像素电极PXL的漏极电极D、以及半导体层A，半导体层A在栅极绝缘层GI上与栅极电极G交叠，用于在源极电极S与漏极电极D之间形成沟道。
由于氧化物半导体层的较高电子迁移率，由氧化物半导体材料形成的半导体层A对于具有较大充电电容的大面积薄膜晶体管基板来说具有优点。然而，具有氧化物半导体材料的薄膜晶体管可需要蚀刻阻止部ES来保护半导体层的上表面免受蚀刻材料的影响，以确保薄膜晶体管的稳定性和特性。更具体地说，当在半导体层A的两侧形成源极电极S和漏极电极D时，需要蚀刻阻止部ES来保护半导体层A免受蚀刻剂的影响。
在栅极线GL的一端处，形成栅极焊盘GP来接收栅极信号。栅极焊盘GP通过贯穿第一钝化层PA1和第二钝化层PA2的栅极焊盘接触孔GPH连接至栅极焊盘端子GTP。此外，在数据线DL的一端处，形成数据焊盘DP来接收像素信号。数据焊盘DP通过贯穿第一钝化层PA1和第二钝化层PA2的数据焊盘接触孔DPH连接至数据焊盘端子DPT。
在像素区域中，形成像素电极PXL和公共电极COM以产生边缘电场，其中在像素电极PXL与公共电极COM之间具有第二钝化层PA2。公共电极COM连接至与栅极线GL平行设置的公共线CL。公共电极COM经由公共线CL被提供基准电压(或“公共电压”)。
公共电极COM和像素电极PXL根据设计目的和场合可具有各种形状和位置。在公共电极COM被提供具有恒定值的基准电压的同时，像素电极PXL被提供根据视频数据而及时地变化的数据电压。因此，在数据线DL与像素电极PXL之间可形成寄生电容。由于寄生电容，显示器的视频质量可劣化。因此，首先形成公共电极COM，然后在最顶层上形成像素电极PXL。
换句话说，在覆盖数据线DL和薄膜晶体管T的第一钝化层PA1上，通过沉积具有低介电常数的较厚有机材料形成平坦化层PAC。然后，形成公共电极COM。然后，在沉积第二钝化层PA2以覆盖公共电极COM之后，在第二钝化层PA2上形成与公共电极交叠的像素电极PXL。在这种结构中，像素电极PXL与数据线DL相距第一钝化层PA1、平坦化层PAC和第二钝化层PA2，使得能够减小数据线DL与像素电极PXL之间的寄生电容。
公共电极COM形成为与像素区域对应的矩形形状。像素电极PXL形成为具有多个区段。尤其是，像素电极PXL与公共电极COM垂直交叠，且在像素电极PXL与公共电极COM之间具有第二钝化层PA2。在像素电极PXL与公共电极COM之间形成边缘电场。通过此边缘电场，在薄膜晶体管基板与滤色器基板之间的平面方向上排列的液晶分子可根据液晶分子的介电各向异性而旋转。根据液晶分子的旋转程度，像素区域的光透射率可变化，从而呈现期望的灰度级。
通过将覆盖焊盘GP和DP的绝缘层图案化来暴露出焊盘GP和DP。暴露的焊盘GP和DP被由用于像素电极PXL的透明导电材料所形成的焊盘端子GPT和DPT覆盖。此外，通过将第二钝化层PA2图案化也暴露出用于公共电极COM的焊盘。
在焊盘区域处，为了接收来自外部控制器的信号，绝缘层被图案化，以暴露出焊盘。然而，如上所述，覆盖焊盘的绝缘层的数量和种类不同。因而，暴露的焊盘可具有损坏。下文中，参照图3和4，在焊盘处发生的损坏解释如下。图3是图解用于形成根据相关技术的边缘场切换型液晶显示器的暴露焊盘的接触孔的工艺的剖面图。图4是图解在通过图3中所示的方法蚀刻绝缘层之后在焊盘处发生的损坏的剖面图。
参照图3，在边缘场切换型液晶显示器的焊盘区域处，设置栅极焊盘GP、数据焊盘DP和公共焊盘CP。栅极焊盘GP是栅极线GL的一个端部。数据焊盘DP是数据线DL的一个端部。公共焊盘CP是公共线CL的一端。
在栅极焊盘GP上，按顺序形成栅极绝缘层GI、第一钝化层PA1和第二钝化层PA2。在数据焊盘DP上，层叠第一钝化层PA1和第二钝化层PA2。相反，在公共焊盘CP上，仅设置第二钝化层PA2。为了使用一个掩模工艺同时暴露栅极焊盘GP、数据焊盘DP和公共焊盘CP的一部分，栅极绝缘层GI、第一钝化层PA1和第二钝化层PA2需要在一个蚀刻步骤中被图案化。
在栅极焊盘GP处，为了形成栅极接触孔GPH，需要按①→②→③的顺序蚀刻三个绝缘层。继而，在数据焊盘DP处，为了形成数据接触孔DPH，需要按①→②的顺序蚀刻两个绝缘层。同时，在公共焊盘CP处，为了形成公共接触孔CPH，需要蚀刻一个绝缘层①。
当蚀刻极焊盘GP、公共焊盘CP和数据焊盘DP的一部分时，这些焊盘连续暴露于蚀刻剂。由于数据焊盘DP包括诸如铜之类的金属材料，所以即使在暴露栅极焊盘GP的过程中被用于图案化绝缘层的蚀刻剂影响，其也不会被蚀刻剂损坏。另一方面，公共焊盘CP由诸如氧化铟锡和氧化铟锌之类的透明导电材料形成。因此，当暴露栅极焊盘GP时这些透明导电材料可很容易被蚀刻剂损坏。
通过暴露于蚀刻剂，透明导电材料可部分结晶，从而形成晶粒(grain)。晶粒的边界很容易被在用于图案化绝缘层的干蚀刻工艺中使用的蚀刻剂损坏。然后，设置在被损坏的透明导电材料下方的第二钝化层PA2能够被蚀刻掉。例如，如图4中所示，在第二钝化层PA2处能够形成沟槽状图案。这种图案不能恰当地保护其下方的导电层。当通过这种有缺陷的图案提供电信号时，在这些图案处不能保证电绝缘，使得信号不能恰当地施加至像素电极。进而，LCD装置的视频图像可能发生缺陷。
发明内容
因此，本发明涉及一种基本上克服了由于相关技术的限制和缺点而导致的一个或多个问题的边缘场切换型液晶显示器。
为了克服上述缺陷，本发明的一个方面是提出一种液晶显示器，其具有用于在图案化绝缘层的干蚀刻工艺过程中保护暴露的焊盘免受蚀刻剂影响的结构。本发明的另一个目的是提出一种液晶显示器，其具有用于将(包括透明导电材料的)焊盘端子与(包括诸如铜之类的低电阻金属材料的)保护金属层之间的界面特性保持在最佳状态的结构。
为了实现上述目的，本发明的一个方面提出了一种边缘场型液晶显示器，包括：基板；设置在所述基板上的栅极焊盘；栅极绝缘层，所述栅极绝缘层覆盖所述栅极焊盘；设置在所述栅极绝缘层上的数据焊盘；覆盖所述数据焊盘的第一钝化层；设置在所述第一钝化层上的公共焊盘；保护金属层，所述保护金属层保护所述公共焊盘免受蚀刻剂影响并且所述保护金属层设置在所述公共焊盘上；覆盖所述公共焊盘的第二钝化层；暴露所述栅极焊盘的栅极焊盘接触孔；暴露所述数据焊盘的数据焊盘接触孔；和暴露所述保护金属层的公共焊盘接触孔。
在其他方面中，所述保护金属层包括以矩阵形式设置在所述公共焊盘上的多个单位保护金属层，并且所述公共焊盘接触孔包括暴露每个单位保护金属层的多个单位公共焊盘接触孔。
在其他方面中，所述单位保护金属层具有比所述单位公共焊盘接触孔大的面积。
在其他方面中，所述栅极焊盘设置在栅极线的一端处，所述数据焊盘设置在数据线的一端处，并且所述公共焊盘设置在公共线的一端处。
在其他方面中，所述公共焊盘包括具有氧化铟锡和氧化铟锌中至少之一的透明导电材料；并且所述保护金属层包括具有比所述透明导电材料低的电阻的导电材料。
在其他方面中，所述保护金属层包括铜和铜合金的至少之一。
在其他方面中，所述液晶显示器还包括：栅极焊盘端子，所述栅极焊盘端子通过所述栅极焊盘接触孔与所述栅极焊盘接触；数据焊盘端子，所述数据焊盘端子通过所述数据焊盘接触孔与所述数据焊盘接触；和公共焊盘端子，所述公共焊盘端子通过所述公共焊盘接触孔与所述公共焊盘接触。
在其他方面中，所述液晶显示器还包括：位于所述第一钝化层上且连接至所述公共焊盘的公共电极；和位于所述第二钝化层上且与所述公共电极交叠的具有多个区段(segment)的像素电极。
本发明的另一个方面提供了一种具有基板的液晶显示器，所述液晶显示器包括：位于所述基板上方的平坦化层；位于所述平坦化层上的公共焊盘；保护金属层，所述保护金属层保护所述公共焊盘免受蚀刻剂影响并且所述保护金属层设置在所述公共焊盘上；和公共焊盘端子，所述公共焊盘端子通过公共焊盘接触孔与所述公共焊盘接触，其中所述保护金属层具有比所述公共焊盘接触孔大的面积。
在本发明中，边缘场切换型液晶显示器包括保护金属层，保护金属层层叠/设置在包括透明导电材料的焊盘上。通过保护金属层，能够保护焊盘免受在通过蚀刻绝缘层来暴露焊盘的图案化工艺中使用的蚀刻剂影响。此外，保护金属层包括具有与接触孔的尺寸对应的尺寸的多个单位保护金属层。接触孔具有满足不增加接触电阻的条件的最小开口尺寸。结果，能够确保具有诸如铜之类的低电阻金属的保护金属层与具有透明导电材料的焊盘之间的最佳界面特性。根据本发明，能够防止当两个不同的导电材料层叠时由于接触面积扩大而界面特性劣化的问题。
应当理解，前面的大体性描述和下面的详细描述都是例示性的和解释性的，意在对要求保护的本发明提供进一步的解释。
附图说明
给本发明提供进一步理解并且并入本申请构成本申请一部分的附图图解了本发明的各个方面，并与说明书一起用于解释本发明的原理。
在附图中：
图1是图解根据相关技术的边缘场型液晶显示器中包括的薄膜晶体管基板的平面图；
图2是图解根据相关技术的沿线I-I’截取的图1的薄膜晶体管基板的结构的剖面图；
图3是图解用于形成根据相关技术的边缘场切换型液晶显示器的暴露焊盘的接触孔的工艺的剖面图；
图4是图解在通过图3中所示的工艺蚀刻绝缘层之后在焊盘处发生的损坏的剖面图；
图5是图解在根据本发明一个方面的边缘场切换型液晶显示器中形成暴露焊盘区域的接触孔的工艺的剖面图；
图6是图解在通过图5中所示的工艺图案化绝缘层之后不具有损坏的焊盘区域的结构的剖面图；
图7是图解在根据本发明另一个方面的边缘场切换型液晶显示器中形成暴露焊盘区域的接触孔的工艺的剖面图；以及
图8是图解根据本发明另一个方面的边缘场切换型液晶显示器中的焊盘区域的结构的剖面图。
具体实施方式
将参照图描述本发明的各方面。在整个详细描述中相似的参考标记表示相似的要素。然而，本发明不限于这些方面，而是在不改变技术精神的情况下能够应用各种变化或修改。在下面的各方面中，为便于解释选择要素的名称，其可能与实际名称不同。
在下面的内容中，将更全面地提供对本发明的主要元件，焊盘部的解释。然而，必要时可使用对于显示区域的任何解释以及相关技术的附图。
图5是图解在根据本发明一个方面的边缘场切换型液晶显示器中形成暴露焊盘区域的接触孔的工艺的剖面图。图6是图解在通过图5中所示的工艺图案化绝缘层之后不具有损坏的焊盘区域的结构的剖面图。
参照图5，在根据本发明一个方面的边缘场切换型液晶显示器中，焊盘区域包括栅极焊盘GP、数据焊盘DP和公共焊盘CP。栅极焊盘GP是栅极线GL的一个端部。栅极焊盘GP可由与栅极线GL相同的金属材料形成。数据焊盘DP是数据线DL的一个端部。数据焊盘DP可由与数据线DL相同的金属材料形成。
公共焊盘CP是公共线CL的一个端部。公共焊盘CP可由与公共线CL相同的材料形成。例如，公共焊盘CP可由诸如氧化铟锡(ITO)和氧化铟锌(IZO)之类的透明导电材料形成。在公共焊盘CP的上表面上设置保护金属层M3。保护金属层M3由用于防止公共焊盘CP的透明导电材料被干蚀刻剂损坏的金属材料形成。例如，保护金属层M3可由下述材料之一形成：铜(Cu)、钛(Ti)、镍(Ni)、钼(Mo)及其任意合金。
公共焊盘CP具有与设置在显示区域中的公共电极COM和/或公共线CL相同的结构。公共电极可形成在平坦化层PAC上。公共线CL具有与整个显示面板上的所有像素区域连接的结构。由于公共线CL被施加地电平(ground level)电压，所以其可进一步由具有比诸如氧化铟锡和氧化铟锌之类的透明导电材料低的电阻的材料形成。例如，公共线CL可具有层叠在透明导电材料上的诸如铜之类的低电阻金属层。因此，保护金属层M3可以是与层叠在公共线CL上的低电阻金属材料相同的材料。
在栅极焊盘GP上，按顺序层叠栅极绝缘层GI、第一钝化层PA1和第二钝化层PA2。在数据焊盘DP上，按顺序层叠第一钝化层PA1和第二钝化层PA2。此外，在公共焊盘CP和保护金属层M3上，仅层叠第二钝化层PA2。为了使用同一个掩模工艺暴露栅极焊盘GP的一部分、数据焊盘DP一部分和公共焊盘CP的一部分，栅极绝缘层GI、第一钝化层PA1和第二钝化层PA2需要被同时并行图案化。
在同一个掩模工艺的情况下，通过按①→②→③的顺序蚀刻栅极焊盘GP上的三个绝缘层，形成栅极焊盘接触孔GPH。通过按①→②的顺序蚀刻数据焊盘DP上的两个绝缘层，形成数据焊盘接触孔DPH。此外，通过蚀刻一个绝缘层①形成公共焊盘接触孔CPH。
由于这些绝缘层通过干蚀刻工艺图案化，所以当暴露栅极焊盘GP时，公共焊盘CP和数据焊盘DP也持续暴露于蚀刻剂。在暴露栅极焊盘GP的同时数据焊盘DP很少被蚀刻剂损坏。这是因为数据焊盘DP由诸如铜之类的金属材料形成。对于公共焊盘CP来说，铜(Cu)覆盖诸如氧化铟锡和氧化铟锌之类的透明导电材料。因此，即使在暴露栅极焊盘GP时公共焊盘CP暴露于蚀刻剂，仍能够通过保护金属层M3保护公共焊盘CP免受蚀刻剂影响，如图6中所示。
在具有接触孔的第二钝化层PA2上，能够通过沉积/图案化与像素电极PXL相同的透明导电材料形成焊盘端子。例如，栅极焊盘端子GPT通过栅极焊盘接触孔GPH与栅极焊盘GP接触。数据焊盘端子DPT通过数据焊盘接触孔DPH与数据焊盘DP接触。此外，公共焊盘端子CPT通过公共焊盘接触孔CPH与公共焊盘CP接触。此外，公共焊盘端子CPT与通过公共焊盘接触孔CPH暴露的保护金属层M3接触，如图6中所示。
如上所述，为了简便的目的，更全面地提供了对于焊盘区域的解释。然而，与焊盘区域相似的结构可应用于非显示区域中的其他区域。例如，可使用与数据线和公共线相同的材料形成信号连线和/或电极。在暴露这些线和/或电极的一部分之后，这些线和/或电极可使用与像素电极相同的材料进行连接。
通过在这些暴露的部分处应用保护金属层M3，能够保护透明导电材料免于暴露于干蚀刻剂。设置于非显示区域中的这些电极和/或线可具有相对较大的面积。当暴露相对较大的面积时，位于透明导电材料上的保护金属层M3也可具有相对较大的面积。
保护金属层M3可由诸如铜(Cu)和铝(Al)之类的低电阻金属材料形成。在铜的情形中，铜与透明导电材料之间的界面可具有接触缺陷。这是由铜膜与透明导电膜之间的表面应力的差异导致的。具体地说，当接触表面面积变得更大时，界面接触缺陷变得更严重。本发明的另一个方面是提供一种当在透明导电材料上层叠包括铜的保护金属层M3时用于消除和/或减小保护金属层M3与透明导电材料之间的界面应力差异的结构。
图7是图解在根据本发明另一个方面的边缘场切换型液晶显示器中形成暴露焊盘区域的接触孔的工艺的剖面图。图8是图解根据本发明另一个方面的边缘场切换型液晶显示器中的焊盘区域的结构的剖面图。
参照图7，在边缘场切换型液晶显示器中，焊盘区域包括栅极焊盘GP、数据焊盘DP和公共焊盘CP。栅极焊盘GP是栅极线GL的一个端部。栅极焊盘GP可由与栅极线GL相同的金属材料形成。数据焊盘DP是数据线DL的一个端部。数据焊盘DP可由与数据线DL相同的金属材料形成。
公共焊盘CP是公共线CL的一个端部。公共焊盘CP可由与公共线CL相同的材料形成。例如，公共焊盘CP可由诸如氧化铟锡(ITO)和氧化铟锌(IZO)之类的透明导电材料形成。在公共焊盘CP的上表面上层叠保护金属层M3。保护金属层M3可由用于防止公共焊盘CP的透明导电材料被干蚀刻剂损坏的金属材料形成。例如，保护金属层M3可由下述材料之一形成：铜(Cu)、钛(Ti)、镍(Ni)、钼(Mo)及其任意合金。
公共焊盘CP具有与设置在显示区域中的公共电极COM和/或公共线CL相同的结构。公共线CL具有与整个显示面板上的所有像素区域连接的延伸结构。由于公共线CL被施加地电平电压，所以其可进一步由具有比诸如氧化铟锡和氧化铟锌之类的透明导电材料低的电阻的材料形成。例如，公共线CL可具有层叠在透明导电材料上的诸如铜之类的低电阻金属层。因此，保护金属层M3可以是与层叠在公共线CL上的低电阻金属材料相同的材料。
本发明的另一个方面是提供一种用于改善公共焊盘CP与层叠在公共焊盘CP上的保护金属层M3之间的界面特性的结构。例如，在具有最小接触表面积的保护金属层M3的情况下，能够在公共焊盘CP上排列多个保护金属层或多个单位保护金属层M3。结果，能够在单个保护金属层M3与公共焊盘CP之间保持最小接触面积，由此能够防止保护金属层M3从公共焊盘CP凸起或脱落。
然而，不能没有限制地保持保护金属层M3与公共焊盘CP之间的最小接触面积。保护金属层M3是通过公共焊盘接触孔CPH暴露的区域。通过公共焊盘接触孔CPH暴露的保护金属层M3的区域可以是与在之后的工艺中沉积在其上的连接金属层电性接触的区域。因此，接触孔需要具有最小尺寸。此外，接触孔的最小面积满足如下条件：通过接触孔接触的两个导电层之间的接触电阻不增加。单个保护金属层M3具有与接触孔的最小尺寸对应的尺寸。
例如，当公共焊盘接触孔CPH的最小尺寸是aμm×bμm时，单个保护金属层M3的尺寸能够在每一侧处比公共焊盘接触孔或单位公共焊盘接触孔CPH的最小尺寸大5μm。就是说，单个保护金属层M3的尺寸能够是(a+10)μm×(b+10)μm，其中a和b是大于0的任意正数。在此，公共焊盘接触孔CPH的最小尺寸是指接触孔(其中与公共焊盘CP的接触电阻不增加)的最小尺寸。
根据本发明的另一个方面，多个保护金属层M3以矩阵方式排列在公共焊盘CP上。单个保护金属层M3的尺寸对应于接触孔的最小尺寸。结果，能够高强度地保持包括透明导电材料的公共焊盘CP与包括铜材料的保护金属层M3之间的界面特性，而不会有任何脱落问题。
在栅极焊盘GP上，按顺序层叠栅极绝缘层GI、第一钝化层PA1和第二钝化层PA2。在数据焊盘DP上，按顺序层叠第一钝化层PA1和第二钝化层PA2。此外，在公共焊盘CP和保护金属层M3上，仅层叠第二钝化层PA2。为了使用同一个掩模工艺暴露栅极焊盘GP的一部分、数据焊盘DP的一部分和公共焊盘CP的一部分，栅极绝缘层GI、第一钝化层PA1和第二钝化层PA2需要被同时并行图案化。
在同一个掩模工艺的情况下，通过按①→②→③的顺序蚀刻栅极焊盘GP上的三个绝缘层，形成栅极焊盘接触孔GPH。通过按①→②的顺序蚀刻数据焊盘DP上的两个绝缘层，形成数据焊盘接触孔DPH。此外，通过蚀刻一个绝缘层①形成公共焊盘接触孔CPH。
由于这些绝缘层通过干蚀刻工艺图案化，所以当栅极焊盘GP暴露于蚀刻剂时，公共焊盘CP和数据焊盘DP也能够被暴露。在暴露栅极焊盘GP的同时数据焊盘DP可很少被蚀刻剂损坏。这是因为数据焊盘DP由诸如铜之类的金属材料形成。对于公共焊盘CP来说，铜(Cu)覆盖诸如氧化铟锡和氧化铟锌之类的透明导电材料。因此，即使在暴露栅极焊盘GP时公共焊盘CP也暴露于蚀刻剂，仍能够通过保护金属层M3保护公共焊盘CP免受蚀刻剂影响，如图8所示。
在具有接触孔的第二钝化层PA2上，能够通过沉积/图案化与像素电极PXL相同的透明导电材料形成焊盘端子。例如，栅极焊盘端子GPT通过栅极焊盘接触孔GPH与栅极焊盘GP接触。数据焊盘端子DPT通过数据焊盘接触孔DPH与数据焊盘DP接触。此外，公共焊盘端子CPT通过公共焊盘接触孔CPH与公共焊盘CP接触。尤其是，公共焊盘端子CPT与通过多个公共焊盘接触孔CPH暴露的多个保护金属层M3接触。
对于根据本发明另一方面的边缘场切换型液晶显示器来说，防止了公共焊盘CP的顶表面受层叠在公共焊盘CP上的保护金属层M3的任何影响。此外，具有最小接触面积的多个保护金属层M3排列在公共焊盘CP上，使得它们不容易脱落或不具有接触缺陷。
尽管参照附图详细描述了本发明的各方面，但所属领域技术人员应当理解，在不改变本发明的技术精神或实质特征的情况下，这些方面能够以其他具体形式实施。因此，应当注意，前述的方面在所有方面仅是举例说明性的，不应解释为限制本发明。本发明的范围由所附权利要求书限定，而不是由本发明的详细描述限定。在权利要求书的含义和范围内作出的所有变化或修改或其等同物都应当解释为落入本发明的范围内。

Claims (20)

1.一种具有基板的液晶显示器，所述液晶显示器包括：
设置在所述基板上的栅极焊盘；
栅极绝缘层，所述栅极绝缘层覆盖所述栅极焊盘；
设置在所述栅极绝缘层上的数据焊盘；
覆盖所述数据焊盘的第一钝化层；
设置在所述第一钝化层上的公共焊盘；
保护金属层，所述保护金属层保护所述公共焊盘免受蚀刻剂影响并且所述保护金属层设置在所述公共焊盘上；
位于所述公共焊盘上的第二钝化层；
暴露所述栅极焊盘的栅极焊盘接触孔；
暴露所述数据焊盘的数据焊盘接触孔；和
暴露所述保护金属层的公共焊盘接触孔。
2.根据权利要求1所述的液晶显示器，其中所述保护金属层包括以矩阵形式设置在所述公共焊盘上的多个单位保护金属层，并且
其中所述公共焊盘接触孔包括暴露每个单位保护金属层的多个单位公共焊盘接触孔。
3.根据权利要求2所述的液晶显示器，其中所述单位保护金属层具有比所述单位公共焊盘接触孔大的面积。
4.根据权利要求2所述的液晶显示器，其中在所述单位公共焊盘接触孔具有aμm×bμm的尺寸的情况下，所述单位保护金属层具有(a+10)μm×(b+10)μm的尺寸，其中a和b是大于0的任意正数。
5.根据权利要求1所述的液晶显示器，其中所述栅极焊盘设置在栅极线的一端处，
其中所述数据焊盘设置在数据线的一端处，并且
所述公共焊盘设置在公共线的一端处。
6.根据权利要求1所述的液晶显示器，其中所述公共焊盘由透明导电材料形成。
7.根据权利要求6所述的液晶显示器，其中所述保护金属层由具有比所述透明导电材料的电阻低的电阻的导电材料形成。
8.根据权利要求7所述的液晶显示器，其中所述导电材料包括下述材料之一：铜、钛、镍、钼及其任意合金。
9.根据权利要求1所述的液晶显示器，还包括：
栅极焊盘端子，所述栅极焊盘端子通过所述栅极焊盘接触孔与所述栅极焊盘接触；
数据焊盘端子，所述数据焊盘端子通过所述数据焊盘接触孔与所述数据焊盘接触；和
公共焊盘端子，所述公共焊盘端子通过所述公共焊盘接触孔与所述公共焊盘接触。
10.根据权利要求1所述的液晶显示器，还包括：
位于所述第一钝化层上且连接至所述公共焊盘的公共电极；和
位于所述第二钝化层上且与所述公共电极交叠的像素电极。
11.一种具有基板的液晶显示器，所述液晶显示器包括：
位于所述基板上方的平坦化层；
位于所述平坦化层上的公共焊盘；
保护金属层，所述保护金属层保护所述公共焊盘免受蚀刻剂影响并且所述保护金属层设置在所述公共焊盘上；和
公共焊盘端子，所述公共焊盘端子通过公共焊盘接触孔与所述公共焊盘接触，
其中所述保护金属层具有比所述公共焊盘接触孔大的面积。
12.根据权利要求11所述的液晶显示器，其中在所述公共焊盘接触孔具有aμm×bμm的尺寸的情况下，所述保护金属层具有(a+10)μm×(b+10)μm的尺寸，其中a和b是大于0的任意正数。
13.根据权利要求11所述的液晶显示器，其中所述公共焊盘设置在公共线的一端处。
14.根据权利要求11所述的液晶显示器，其中所述公共焊盘由透明导电材料形成。
15.根据权利要求14所述的液晶显示器，其中所述保护金属层由具有比所述透明导电材料的电阻低的电阻的导电材料形成。
16.根据权利要求15所述的液晶显示器，其中所述导电材料包括下述材料之一：铜、钛、镍、钼及其任意合金。
17.根据权利要求14所述的液晶显示器，其中所述透明导电材料包括氧化铟锡和氧化铟锌之一。
18.根据权利要求11所述的液晶显示器，还包括位于所述平坦化层上且连接至所述公共焊盘的公共电极。
19.根据权利要求11所述的液晶显示器，其中所述保护金属层包括以矩阵形式设置在所述公共焊盘上的多个单位保护金属层，并且其中所述公共焊盘接触孔包括暴露每个单位保护金属层的多个单位公共焊盘接触孔。
20.根据权利要求13所述的液晶显示器，其中所述公共焊盘由与所述公共线相同的材料形成。
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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180051739A (ko) * 2016-11-08 2018-05-17 삼성디스플레이 주식회사 표시 장치
EP4036825A1 (en) 2021-01-29 2022-08-03 Ford Global Technologies, LLC Tracking system and method employing an artificial neural network for tracking tools in and nearby a transportation vehicle

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080062777A (ko) * 2006-12-29 2008-07-03 엘지디스플레이 주식회사 액정표시장치 및 그 제조방법
KR20120115837A (ko) * 2011-04-11 2012-10-19 엘지디스플레이 주식회사 프린지 필드 스위칭 방식의 박막 트랜지스터 기판 및 그 제조 방법
CN102769013A (zh) * 2011-05-03 2012-11-07 乐金显示有限公司 薄膜晶体管基板及其制造方法
CN103811499A (zh) * 2012-11-01 2014-05-21 三星显示有限公司 薄膜晶体管阵列面板及其制造方法
CN103913905A (zh) * 2012-12-31 2014-07-09 三星显示有限公司 显示装置
KR20140118414A (ko) * 2013-03-29 2014-10-08 엘지디스플레이 주식회사 액정표시장치 및 이의 제조방법
CN104102059A (zh) * 2013-04-03 2014-10-15 三菱电机株式会社 Tft阵列基板及其制造方法
CN104752444A (zh) * 2015-04-24 2015-07-01 合肥鑫晟光电科技有限公司 显示基板及其制备方法、显示面板和显示装置
CN104749842A (zh) * 2013-12-31 2015-07-01 乐金显示有限公司 液晶显示设备及其制造方法
CN105047671A (zh) * 2014-04-17 2015-11-11 乐金显示有限公司 用于显示装置的阵列基板及其制造方法

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6287899B1 (en) * 1998-12-31 2001-09-11 Samsung Electronics Co., Ltd. Thin film transistor array panels for a liquid crystal display and a method for manufacturing the same
JP4777500B2 (ja) * 2000-06-19 2011-09-21 三菱電機株式会社 アレイ基板およびそれを用いた表示装置ならびにアレイ基板の製造方法
JP4718725B2 (ja) * 2001-07-03 2011-07-06 Ｎｅｃ液晶テクノロジー株式会社 液晶表示装置の製造方法
TWI242671B (en) * 2003-03-29 2005-11-01 Lg Philips Lcd Co Ltd Liquid crystal display of horizontal electronic field applying type and fabricating method thereof
KR100602062B1 (ko) * 2003-04-03 2006-07-14 엘지.필립스 엘시디 주식회사 수평 전계 인가형 액정 표시 장치 및 그 제조 방법
KR100538328B1 (ko) * 2003-06-20 2005-12-22 엘지.필립스 엘시디 주식회사 액정표시장치 및 그 제조방법
KR101086477B1 (ko) * 2004-05-27 2011-11-25 엘지디스플레이 주식회사 표시 소자용 박막 트랜지스터 기판 제조 방법
KR101085136B1 (ko) * 2004-12-04 2011-11-18 엘지디스플레이 주식회사 수평 전계 박막 트랜지스터 기판 및 그 제조 방법
KR101186019B1 (ko) * 2004-12-29 2012-09-25 엘지디스플레이 주식회사 박막트랜지스터 기판 및 그 제조 방법
KR20060079040A (ko) * 2004-12-31 2006-07-05 엘지.필립스 엘시디 주식회사 프린지 필드 스위칭 타입의 박막 트랜지스터 기판 및 그제조 방법
KR101159318B1 (ko) * 2005-05-31 2012-06-22 엘지디스플레이 주식회사 액정 표시 장치
KR101189275B1 (ko) * 2005-08-26 2012-10-09 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
EP1793266B1 (en) * 2005-12-05 2017-03-08 Semiconductor Energy Laboratory Co., Ltd. Transflective Liquid Crystal Display with a Horizontal Electric Field Configuration
KR101192750B1 (ko) * 2005-12-30 2012-10-18 엘지디스플레이 주식회사 Ｔｆｔ 어레이 기판 및 그 제조방법
WO2010116585A1 (ja) * 2009-04-10 2010-10-14 シャープ株式会社 アクティブマトリクス基板及びそれを備えた液晶表示装置並びにアクティブマトリクス基板の製造方法
KR101250319B1 (ko) * 2009-10-06 2013-04-03 엘지디스플레이 주식회사 프린지 필드 스위칭 모드 액정표시장치용 어레이 기판과 그 제조방법
JP5730062B2 (ja) * 2011-02-21 2015-06-03 株式会社ジャパンディスプレイ 表示装置
KR101849569B1 (ko) * 2011-06-16 2018-04-17 엘지디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
KR101905757B1 (ko) * 2011-11-17 2018-10-10 엘지디스플레이 주식회사 에프에프에스 방식 액정표시장치용 어레이기판 및 그 제조방법
TWI627483B (zh) * 2012-11-28 2018-06-21 半導體能源研究所股份有限公司 顯示裝置及電視接收機
KR102011274B1 (ko) * 2012-12-10 2019-08-19 삼성디스플레이 주식회사 표시 기판의 제조 방법
WO2014103922A1 (ja) * 2012-12-27 2014-07-03 シャープ株式会社 表示素子、表示装置、及び表示素子の製造方法
CN104885007B (zh) * 2012-12-27 2017-11-21 夏普株式会社 显示元件和显示装置
KR102085857B1 (ko) * 2013-12-20 2020-03-06 엘지디스플레이 주식회사 액정표시장치 및 그 제조방법
KR20150089252A (ko) * 2014-01-27 2015-08-05 삼성디스플레이 주식회사 표시 기판 및 표시 기판용 모기판의 제조 방법
TWI553837B (zh) * 2014-06-17 2016-10-11 友達光電股份有限公司 製作顯示面板之方法
KR20160062322A (ko) * 2014-11-24 2016-06-02 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 그 제조 방법
CN104503158B (zh) * 2014-12-17 2017-04-19 深圳市华星光电技术有限公司 阵列基板、液晶显示面板及液晶显示面板的检测方法
JP6775325B2 (ja) * 2016-05-13 2020-10-28 三菱電機株式会社 薄膜トランジスタ基板および液晶表示装置

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080062777A (ko) * 2006-12-29 2008-07-03 엘지디스플레이 주식회사 액정표시장치 및 그 제조방법
KR20120115837A (ko) * 2011-04-11 2012-10-19 엘지디스플레이 주식회사 프린지 필드 스위칭 방식의 박막 트랜지스터 기판 및 그 제조 방법
CN102769013A (zh) * 2011-05-03 2012-11-07 乐金显示有限公司 薄膜晶体管基板及其制造方法
CN103811499A (zh) * 2012-11-01 2014-05-21 三星显示有限公司 薄膜晶体管阵列面板及其制造方法
CN103913905A (zh) * 2012-12-31 2014-07-09 三星显示有限公司 显示装置
KR20140118414A (ko) * 2013-03-29 2014-10-08 엘지디스플레이 주식회사 액정표시장치 및 이의 제조방법
CN104102059A (zh) * 2013-04-03 2014-10-15 三菱电机株式会社 Tft阵列基板及其制造方法
CN104749842A (zh) * 2013-12-31 2015-07-01 乐金显示有限公司 液晶显示设备及其制造方法
CN105047671A (zh) * 2014-04-17 2015-11-11 乐金显示有限公司 用于显示装置的阵列基板及其制造方法
CN104752444A (zh) * 2015-04-24 2015-07-01 合肥鑫晟光电科技有限公司 显示基板及其制备方法、显示面板和显示装置

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