JP6775325B2 - 薄膜トランジスタ基板および液晶表示装置 - Google Patents
薄膜トランジスタ基板および液晶表示装置 Download PDFInfo
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- JP6775325B2 JP6775325B2 JP2016096767A JP2016096767A JP6775325B2 JP 6775325 B2 JP6775325 B2 JP 6775325B2 JP 2016096767 A JP2016096767 A JP 2016096767A JP 2016096767 A JP2016096767 A JP 2016096767A JP 6775325 B2 JP6775325 B2 JP 6775325B2
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- insulating film
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- wiring
- gate
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- 239000000758 substrate Substances 0.000 title claims description 99
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 56
- 239000010409 thin film Substances 0.000 title claims description 39
- 239000010410 layer Substances 0.000 claims description 267
- 239000010408 film Substances 0.000 claims description 171
- 229910052751 metal Inorganic materials 0.000 claims description 98
- 239000002184 metal Substances 0.000 claims description 98
- 239000004065 semiconductor Substances 0.000 claims description 26
- 239000004020 conductor Substances 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 22
- 239000011347 resin Substances 0.000 claims description 13
- 229920005989 resin Polymers 0.000 claims description 13
- 239000011159 matrix material Substances 0.000 claims description 9
- 230000000149 penetrating effect Effects 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 2
- 230000005684 electric field Effects 0.000 description 23
- 230000006866 deterioration Effects 0.000 description 21
- 239000011229 interlayer Substances 0.000 description 16
- 238000000034 method Methods 0.000 description 11
- 230000001681 protective effect Effects 0.000 description 10
- 230000004048 modification Effects 0.000 description 9
- 238000012986 modification Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 230000007547 defect Effects 0.000 description 7
- 239000007769 metal material Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 6
- 238000010030 laminating Methods 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005311 autocorrelation function Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133345—Insulating layers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133512—Light shielding layers, e.g. black matrix
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
- G02F1/13378—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by treatment of the surface, e.g. embossing, rubbing or light irradiation
- G02F1/133788—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by treatment of the surface, e.g. embossing, rubbing or light irradiation by light irradiation, e.g. linearly polarised light photo-polymerisation
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134318—Electrodes characterised by their geometrical arrangement having a patterned common electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134372—Electrodes characterised by their geometrical arrangement for fringe field switching [FFS] where the common electrode is not patterned
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/13606—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit having means for reducing parasitic capacitance
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136218—Shield electrodes
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
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Description
(液晶表示装置の構成)
図1は、本実施の形態における液晶表示装置500の構成を概略的に示す部分断面図である。液晶表示装置500は、TFT基板200(薄膜トランジスタ基板)と、カラーフィルタ基板300(対向基板)と、液晶層400と、配向層161と、配向層162とを有している。カラーフィルタ基板300は、TFT基板200と間隔を空けて配置されている。液晶層400はTFT基板200およびカラーフィルタ基板300の間に保持されている。配向層161および162の各々は、液晶層400を配向させるものである。配向層161および162のそれぞれは、TFT基板200およびカラーフィルタ基板300上に設けられている。本実施の形態においては、液晶表示装置500はFFSモードのものである。
図2は、TFT基板200の構成を模式的に示す平面図である。TFT基板200は、画像を表示する表示領域101と、表示領域101の外に設けられた額縁領域102とを有している。額縁領域102は、典型的には、図2に示されているように、表示領域101を囲んでいる。配向層161および162(図1)の各々は、平面視において、少なくとも表示領域101を包含するように配置されている。
図3は、各画素PX1の構成を概略的に示す部分平面図である。図4は、図3と同様の視野での図であり、各画素PX1の構成を、一部の部材の図示を省略しつつ概略的に示す部分平面図である。図5は、線V−V(図3および図4)に沿う概略部分断面図である。なお、図を見やすくするために、図4において金属層15にドット模様が付されている。
本実施の形態によれば、図5に示されているように、共通電極91は画素電極71の上方に配置される。これにより、厚み方向において、TFT105と、透明導電材料からなる画素電極71との間に、共通電極91が配置されなくてよい。よって、これらの間に共通電極91が配置される場合に比して、TFT105と画素電極71との間の電気的経路を短くし得る。よって、その電気抵抗が過度に大きくなることを避けつつ、当該電気的経路を構成するコンタクトホールの面積を抑えることができる。よって、非画素表示領域の面積を抑えることができる。よって、大きな開口率を確保しやすくなる。さらに、第1に、チャネル層31への光を遮る遮光部15fを有する金属層15が設けられる。これにより、酸化物半導体からなるチャネル層31の、光に起因した劣化が抑制される。よって、チャネル層31の劣化に起因しての表示制御の不良が抑制される。第2に、金属層15は共通電極91の一部と積層構造を有している。この積層構造は、低抵抗の電気的経路を構成する。これにより、TFT基板200内での共通電極91の電位の差異が抑制される。よって、TFT基板200を用いた表示装置の表示むらが抑制される。以上から、大きな開口率を確保しつつ、表示不良を抑制することができる。
図6および図7を参照して、本実施の形態においては、TFT基板200(図1および図2)は、実施の形態1で説明した画素PX1(図4および図5)に代わり、画素PX2を有している。
(構成)
図8および図9を参照して、本実施の形態においては、TFT基板200(図1および図2)は、実施の形態1で説明した画素PX1(図4および図5)に代わり、画素PX3を有している。
実施の形態1と同様、本実施の形態においても、厚み方向において、TFT105と、透明導電材料からなる画素電極71との間に、共通電極91が配置されなくてよい。これにより、これらの間に共通電極91が配置される場合に比して、TFT105と画素電極71との間の電気的経路を短くし得る。よって、その電気抵抗が過度に大きくなることを避けつつ、当該電気的経路を構成するコンタクトホールの面積を抑えることができる。よって、非画素表示領域の面積を抑えることができる。よって、大きな開口率を確保しやすくなる。さらに、チャネル層31への光を遮る遮光部15fを有する金属層15が設けられる。これにより、酸化物半導体からなるチャネル層31の、光に起因した劣化が抑制される。よって、チャネル層31の劣化に起因しての表示制御の不良が抑制される。以上から、大きな開口率を確保しつつ、表示不良を抑制することができる。
上記本実施の形態においては、図8および図9に示すように、画素電極71と金属層15とが互いに重ならないように配置されている。
本実施の形態においては、配向層161(図1)は、光配向性を有する材料からなる。この場合、液晶表示装置500の製造方法は、光配向性を有する材料からなる配向層161をTFT基板200上に形成する工程と、この配向層161に対して光配向処理を行う工程とを有する。光配向処理により、配向層161の表面の配向状態が所望のものに変化させられる。光配向処理は、例えば、TFT基板200の上面に配向層161を形成した後、上方向または斜め上方向からUV光を照射することにより行われる。なお、上記以外の構成については、上述した実施の形態1〜3の構成とほぼ同じである。
(構成)
図10を参照して、外部配線107(図2)は、典型的には、外部ゲート配線107a(第1の配線)と、外部ソース配線107b(第2の配線)とを含む。外部ゲート配線107aは、透明絶縁性基板100上に配置されている。言い換えれば、外部ゲート配線107aは、走査線104と同層に配置されている。外部ゲート配線107aは、走査線104の材料と同じ材料からなる。よって外部ゲート配線107aは、走査線104と同時に形成され得る。外部ソース配線107bは、ゲート絶縁膜2上に配置されている。言い換えれば、外部ソース配線107bは、信号線103と同層に配置されている。外部ソース配線107bは信号線103の材料と同じ材料からなる。よって外部ソース配線107bは、信号線103と同時に形成され得る。外部配線107の構成上、外部ゲート配線107aと外部ソース配線107bとが額縁領域102(図2)において互いに電気的に接続される場合がある。本実施の形態は、このような場合について説明する。
本実施の形態によれば、外部ゲート配線107aと外部ソース配線107bとの間が接続金属層15pによって接続される。接続金属層15pは、透明導電材料の抵抗率に比して一般に低い抵抗率を有する材料である金属からなる。これにより、外部ゲート配線107aと外部ソース配線107bとの間を低抵抗で接続することができる。よって、外部ゲート配線107aと外部ソース配線107bとを有する外部配線107の配線抵抗および信号遅延を小さくし得る。言い換えれば、表示領域101へ至る外部配線107の配線抵抗および信号遅延を小さくし得る。よって表示特性を向上させることができる。
外部配線107(図2)と同様の機能を有する構成の少なくとも一部が、表示領域101内に分散配置されてもよい。このような配置は、例えば、表示領域101内に駆動回路が分散配置される場合に適用される。この場合、上述した接続金属層15pは、額縁領域102に代わりまたはそれに加えて表示領域101内に配置され得る。
上記の本実施の形態においては、接続金属層15p(図10)が実施の形態1または2(図5または図7)の構成に適用される場合について説明した。一方、本変形例の接続金属層15p(図11)は、実施の形態3(図9)の構成に適用されるものである。この場合、金属層15の接続金属層15p(図11)は、接続金属層15aおよび遮光部15f(図9)と共に、絶縁膜20の平坦化膜6上に配置される。よって、接続金属層15pの配置に関する限り、層間絶縁膜8のコンタクトホール82およびコンタクトホール83は、必ずしも必要ではない。ただしこれらのコンタクトホールは、接続導電層91pが設けられる場合に必要となる。
TFT105の製造工程と同様の工程を用いて、ICチップ109(図2)の機能を有する電子回路を額縁領域102に形成し得る。この電子回路内の配線として、外部ゲート配線107aおよび外部ソース配線107bが用いられ得る。これにより、当該電子回路内の配線抵抗および信号遅延が低減される。よって表示特性を向上させることができる。
Claims (11)
- マトリックス状に配置された複数の画素を有する表示領域を含む薄膜トランジスタ基板において、
支持基板と、
前記支持基板上に設けられ、前記画素の各々に配置されたゲート電極を含むゲート配線と、
前記ゲート配線を覆うゲート絶縁膜と、
前記ゲート絶縁膜を介して前記ゲート電極の各々の上に設けられ、酸化物半導体からなるチャネル層と、
前記画素の各々に配置されかつ前記チャネル層に接するソース電極を含むソース配線と、
前記画素の各々に配置され、前記チャネル層に接し、前記ソース電極から離れたドレイン電極と、
前記チャネル層と前記ソース配線と前記ドレイン電極との上に設けられ、前記ドレイン電極に達するドレインコンタクトホールが設けられた第1の絶縁膜と、
前記画素の各々において前記第1の絶縁膜上に設けられ、前記ドレインコンタクトホールによって前記ドレイン電極に電気的に接続された接続導電層を含み、透明導電材料からなる画素電極と、
前記画素電極を覆う第2の絶縁膜と、
前記第2の絶縁膜上に設けられ、厚み方向において前記画素電極と対向する開口部を有し、透明導電材料からなる共通電極と、
前記共通電極の一部と積層構造を有し、平面視において前記チャネル層と少なくとも部分的に重なる遮光部を有する金属層と、
を備え、
前記金属層の一部は、前記画素電極と同層に配置されるように前記第1の絶縁膜の一部の上に設けられており、前記第2の絶縁膜に覆われている、
薄膜トランジスタ基板。 - 前記第1の絶縁膜上に前記画素電極から離れて設けられ、透明導電材料からなる共通透明導電層をさらに備え、
前記第2の絶縁膜には、前記共通透明導電層に達する共通透明導電層コンタクトホールが設けられており、前記金属層は、前記共通透明導電層コンタクトホールによって前記共通透明導電層に電気的に接続されており、前記共通透明導電層は平面視において前記チャネル層の外に配置されている、
請求項1に記載の薄膜トランジスタ基板。 - 前記金属層は前記ゲート配線に沿って延びている、請求項1または請求項2に記載の薄膜トランジスタ基板。
- 前記金属層は前記第2の絶縁膜と前記共通電極との間に配置されている、請求項1から請求項3のいずれか1項に記載の薄膜トランジスタ基板。
- 前記チャネル層は平面視において前記ゲート電極に包含されている、請求項1から請求項4のいずれか1項に記載の薄膜トランジスタ基板。
- 前記第1の絶縁膜は有機樹脂膜を含む、請求項1から請求項5のいずれか1項に記載の薄膜トランジスタ基板。
- 前記第1の絶縁膜はスピンオングラス膜を含む、請求項1から請求項5のいずれか1項に記載の薄膜トランジスタ基板。
- 前記支持基板上に設けられ、前記ゲート配線の材料と同じ材料からなる第1の配線と、
前記ゲート絶縁膜上に設けられ、前記ソース配線の材料と同じ材料からなる第2の配線と、
をさらに備え、
前記金属層は接続金属層を含み、
前記接続金属層が、前記第1の絶縁膜および前記ゲート絶縁膜を貫通する第1のコンタクトホールによって前記第1の配線に電気的に接続され、かつ、前記第1の絶縁膜を貫通する第2のコンタクトホールによって前記第2の配線に電気的に接続されることにより、前記第1の配線と前記第2の配線とは互いに電気的に接続されている、
請求項1から請求項7のいずれか1項に記載の薄膜トランジスタ基板。 - 前記薄膜トランジスタ基板は前記表示領域の外に設けられた額縁領域を有し、前記接続金属層は前記額縁領域内に配置されている、請求項8に記載の薄膜トランジスタ基板。
- 請求項1から請求項9のいずれか1項に記載の薄膜トランジスタ基板と、
前記薄膜トランジスタ基板と間隔を空けて配置された対向基板と、
前記薄膜トランジスタ基板および前記対向基板の間に保持された液晶層と、
を備える、
液晶表示装置。 - 前記薄膜トランジスタ基板上に設けられ、前記液晶層を配向させる配向層をさらに備え、
前記配向層は、光配向性を有する材料からなる、
請求項10に記載の液晶表示装置。
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JP5809289B2 (ja) * | 2011-11-25 | 2015-11-10 | シャープ株式会社 | 液晶表示装置 |
JP5979627B2 (ja) * | 2011-12-12 | 2016-08-24 | パナソニック液晶ディスプレイ株式会社 | 表示パネル、及び表示装置 |
JP2015049426A (ja) * | 2013-09-03 | 2015-03-16 | パナソニック液晶ディスプレイ株式会社 | 液晶表示装置 |
JP6308757B2 (ja) | 2013-11-20 | 2018-04-11 | 三菱電機株式会社 | 液晶表示パネルおよび液晶表示パネルの製造方法 |
KR102140815B1 (ko) * | 2013-12-09 | 2020-08-04 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
TWI553877B (zh) * | 2014-01-17 | 2016-10-11 | 群創光電股份有限公司 | 薄膜電晶體基板、顯示面板及顯示裝置 |
JP6497876B2 (ja) | 2014-09-01 | 2019-04-10 | 三菱電機株式会社 | 液晶表示パネル、及びその製造方法 |
US10725332B2 (en) * | 2015-10-06 | 2020-07-28 | Lg Chem, Ltd. | Display device |
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