JP6321937B2 - 剥離乾燥装置及び方法 - Google Patents

剥離乾燥装置及び方法 Download PDF

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Publication number
JP6321937B2
JP6321937B2 JP2013212490A JP2013212490A JP6321937B2 JP 6321937 B2 JP6321937 B2 JP 6321937B2 JP 2013212490 A JP2013212490 A JP 2013212490A JP 2013212490 A JP2013212490 A JP 2013212490A JP 6321937 B2 JP6321937 B2 JP 6321937B2
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Japan
Prior art keywords
substrate
dry chemical
chuck
chamber
chemical agent
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Expired - Fee Related
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JP2013212490A
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English (en)
Japanese (ja)
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JP2014090167A (ja
JP2014090167A5 (enExample
Inventor
ステファン・エム．・シラド
ダイアン・ハイムズ
アラン・エム．・シェップ
ラッチャナ・リマリー
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2013212490A 2012-10-11 2013-10-10 剥離乾燥装置及び方法 Expired - Fee Related JP6321937B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/650,044 2012-10-11
US13/650,044 US8898928B2 (en) 2012-10-11 2012-10-11 Delamination drying apparatus and method

Publications (3)

Publication Number Publication Date
JP2014090167A JP2014090167A (ja) 2014-05-15
JP2014090167A5 JP2014090167A5 (enExample) 2016-11-17
JP6321937B2 true JP6321937B2 (ja) 2018-05-09

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Family Applications (1)

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JP2013212490A Expired - Fee Related JP6321937B2 (ja) 2012-10-11 2013-10-10 剥離乾燥装置及び方法

Country Status (6)

Country Link
US (1) US8898928B2 (enExample)
JP (1) JP6321937B2 (enExample)
KR (1) KR20140047009A (enExample)
CN (1) CN103730332B (enExample)
SG (1) SG2013075718A (enExample)
TW (1) TWI602234B (enExample)

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JP6141479B1 (ja) * 2016-03-18 2017-06-07 エスペック株式会社 乾燥装置
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KR102008566B1 (ko) * 2016-05-24 2019-08-07 가부시키가이샤 스크린 홀딩스 기판 처리 장치 및 기판 처리 방법
TWI645030B (zh) * 2016-05-24 2018-12-21 斯庫林集團股份有限公司 Substrate processing apparatus and substrate processing method
JP6849368B2 (ja) * 2016-09-30 2021-03-24 芝浦メカトロニクス株式会社 基板処理装置
JP6951229B2 (ja) * 2017-01-05 2021-10-20 株式会社Ｓｃｒｅｅｎホールディングス 基板洗浄装置および基板洗浄方法
WO2018128093A1 (ja) 2017-01-05 2018-07-12 株式会社Ｓｃｒｅｅｎホールディングス 基板洗浄装置および基板洗浄方法
JP6966899B2 (ja) * 2017-08-31 2021-11-17 株式会社Ｓｃｒｅｅｎホールディングス 基板乾燥方法および基板処理装置
JP6954793B2 (ja) * 2017-09-25 2021-10-27 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法、基板処理液及び基板処理装置
JP7018792B2 (ja) * 2018-03-22 2022-02-14 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法及び基板処理装置
JP7037402B2 (ja) * 2018-03-26 2022-03-16 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP7013309B2 (ja) * 2018-04-10 2022-01-31 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
KR102728304B1 (ko) * 2018-11-14 2024-11-11 삼성전자주식회사 기판 건조 방법, 포토레지스트 현상 방법, 그들을 포함하는 포토리소그래피 방법, 및 기판 건조 장치
KR102775038B1 (ko) * 2019-03-28 2025-03-05 삼성디스플레이 주식회사 감압 건조 장치
EP3832391A1 (en) * 2019-12-03 2021-06-09 ASML Netherlands B.V. Clamp assembly
KR20220037632A (ko) * 2020-09-18 2022-03-25 세메스 주식회사 기판 처리 장치 및 방법
KR102622985B1 (ko) * 2020-12-31 2024-01-11 세메스 주식회사 기판 처리 장치
US20220403509A1 (en) * 2021-06-17 2022-12-22 Tokyo Electron Limited Vacuum processing apparatus and oxidizing gas removal method
CN115355668A (zh) * 2022-06-24 2022-11-18 嘉兴智正医药科技有限公司 一种微针制备用冷冻干燥机
CN115611232A (zh) * 2022-12-15 2023-01-17 清华大学 纳米悬臂梁及其制备工艺
CN117433254B (zh) * 2023-12-21 2024-02-23 山西普恒制药有限公司 一种冻干粉生产装置

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Also Published As

Publication number Publication date
KR20140047009A (ko) 2014-04-21
US8898928B2 (en) 2014-12-02
SG2013075718A (en) 2014-05-29
TWI602234B (zh) 2017-10-11
CN103730332B (zh) 2017-05-10
CN103730332A (zh) 2014-04-16
JP2014090167A (ja) 2014-05-15
US20140101964A1 (en) 2014-04-17
TW201430938A (zh) 2014-08-01

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