TWI602234B - 剝離乾燥設備及方法 - Google Patents
剝離乾燥設備及方法 Download PDFInfo
- Publication number
- TWI602234B TWI602234B TW102136808A TW102136808A TWI602234B TW I602234 B TWI602234 B TW I602234B TW 102136808 A TW102136808 A TW 102136808A TW 102136808 A TW102136808 A TW 102136808A TW I602234 B TWI602234 B TW I602234B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- drying
- chuck
- chamber
- chemical
- Prior art date
Links
- 238000001035 drying Methods 0.000 title claims description 128
- 238000000034 method Methods 0.000 title claims description 46
- 230000032798 delamination Effects 0.000 title 1
- 239000000758 substrate Substances 0.000 claims description 93
- 239000000126 substance Substances 0.000 claims description 81
- 239000007787 solid Substances 0.000 claims description 33
- 239000007788 liquid Substances 0.000 claims description 18
- 239000012080 ambient air Substances 0.000 claims description 17
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 claims description 16
- 238000001816 cooling Methods 0.000 claims description 14
- 239000012530 fluid Substances 0.000 claims description 14
- 238000004891 communication Methods 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 10
- 238000012546 transfer Methods 0.000 claims description 8
- 230000008014 freezing Effects 0.000 claims description 5
- 238000007710 freezing Methods 0.000 claims description 5
- 238000012545 processing Methods 0.000 claims description 4
- 230000008569 process Effects 0.000 description 25
- 235000012431 wafers Nutrition 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 238000002474 experimental method Methods 0.000 description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 238000005086 pumping Methods 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 238000000859 sublimation Methods 0.000 description 6
- 230000008022 sublimation Effects 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000001307 helium Substances 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000004377 microelectronic Methods 0.000 description 3
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 239000003570 air Substances 0.000 description 2
- -1 but not limited to Substances 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000004108 freeze drying Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- DIIIISSCIXVANO-UHFFFAOYSA-N 1,2-Dimethylhydrazine Chemical compound CNNC DIIIISSCIXVANO-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- IEJIGPNLZYLLBP-UHFFFAOYSA-N dimethyl carbonate Chemical compound COC(=O)OC IEJIGPNLZYLLBP-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/650,044 US8898928B2 (en) | 2012-10-11 | 2012-10-11 | Delamination drying apparatus and method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201430938A TW201430938A (zh) | 2014-08-01 |
| TWI602234B true TWI602234B (zh) | 2017-10-11 |
Family
ID=50454356
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102136808A TWI602234B (zh) | 2012-10-11 | 2013-10-11 | 剝離乾燥設備及方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8898928B2 (enExample) |
| JP (1) | JP6321937B2 (enExample) |
| KR (1) | KR20140047009A (enExample) |
| CN (1) | CN103730332B (enExample) |
| SG (1) | SG2013075718A (enExample) |
| TW (1) | TWI602234B (enExample) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT1397930B1 (it) * | 2009-12-23 | 2013-02-04 | Telstar Technologies S L | Metodo per monitorare l'essiccamento primario di un processo di liofilizzazione. |
| US8898928B2 (en) * | 2012-10-11 | 2014-12-02 | Lam Research Corporation | Delamination drying apparatus and method |
| CN103234328B (zh) * | 2013-03-28 | 2015-04-08 | 京东方科技集团股份有限公司 | 一种基板减压干燥方法及装置 |
| US10008396B2 (en) | 2014-10-06 | 2018-06-26 | Lam Research Corporation | Method for collapse-free drying of high aspect ratio structures |
| US10068781B2 (en) | 2014-10-06 | 2018-09-04 | Lam Research Corporation | Systems and methods for drying high aspect ratio structures without collapse using sacrificial bracing material that is removed using hydrogen-rich plasma |
| US10186444B2 (en) * | 2015-03-20 | 2019-01-22 | Applied Materials, Inc. | Gas flow for condensation reduction with a substrate processing chuck |
| JP6141479B1 (ja) * | 2016-03-18 | 2017-06-07 | エスペック株式会社 | 乾燥装置 |
| JP6557625B2 (ja) | 2016-03-23 | 2019-08-07 | 東芝メモリ株式会社 | 基板の生産方法、および基板の生産システム |
| KR102008566B1 (ko) * | 2016-05-24 | 2019-08-07 | 가부시키가이샤 스크린 홀딩스 | 기판 처리 장치 및 기판 처리 방법 |
| TWI645030B (zh) * | 2016-05-24 | 2018-12-21 | 斯庫林集團股份有限公司 | Substrate processing apparatus and substrate processing method |
| JP6849368B2 (ja) * | 2016-09-30 | 2021-03-24 | 芝浦メカトロニクス株式会社 | 基板処理装置 |
| JP6951229B2 (ja) * | 2017-01-05 | 2021-10-20 | 株式会社Screenホールディングス | 基板洗浄装置および基板洗浄方法 |
| WO2018128093A1 (ja) | 2017-01-05 | 2018-07-12 | 株式会社Screenホールディングス | 基板洗浄装置および基板洗浄方法 |
| JP6966899B2 (ja) * | 2017-08-31 | 2021-11-17 | 株式会社Screenホールディングス | 基板乾燥方法および基板処理装置 |
| JP6954793B2 (ja) * | 2017-09-25 | 2021-10-27 | 株式会社Screenホールディングス | 基板処理方法、基板処理液及び基板処理装置 |
| JP7018792B2 (ja) * | 2018-03-22 | 2022-02-14 | 株式会社Screenホールディングス | 基板処理方法及び基板処理装置 |
| JP7037402B2 (ja) * | 2018-03-26 | 2022-03-16 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
| JP7013309B2 (ja) * | 2018-04-10 | 2022-01-31 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
| KR102728304B1 (ko) * | 2018-11-14 | 2024-11-11 | 삼성전자주식회사 | 기판 건조 방법, 포토레지스트 현상 방법, 그들을 포함하는 포토리소그래피 방법, 및 기판 건조 장치 |
| KR102775038B1 (ko) * | 2019-03-28 | 2025-03-05 | 삼성디스플레이 주식회사 | 감압 건조 장치 |
| EP3832391A1 (en) * | 2019-12-03 | 2021-06-09 | ASML Netherlands B.V. | Clamp assembly |
| KR20220037632A (ko) * | 2020-09-18 | 2022-03-25 | 세메스 주식회사 | 기판 처리 장치 및 방법 |
| KR102622985B1 (ko) * | 2020-12-31 | 2024-01-11 | 세메스 주식회사 | 기판 처리 장치 |
| US20220403509A1 (en) * | 2021-06-17 | 2022-12-22 | Tokyo Electron Limited | Vacuum processing apparatus and oxidizing gas removal method |
| CN115355668A (zh) * | 2022-06-24 | 2022-11-18 | 嘉兴智正医药科技有限公司 | 一种微针制备用冷冻干燥机 |
| CN115611232A (zh) * | 2022-12-15 | 2023-01-17 | 清华大学 | 纳米悬臂梁及其制备工艺 |
| CN117433254B (zh) * | 2023-12-21 | 2024-02-23 | 山西普恒制药有限公司 | 一种冻干粉生产装置 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200632440A (en) * | 2006-06-05 | 2006-09-16 | Mikuni Denshi Kk | Vacuum combining alignment apparatus and liquid crystal display device manufactured by using the same |
| TW200640584A (en) * | 2005-05-26 | 2006-12-01 | Semes Co Ltd | Method and apparatus for cleaning and drying substrates |
| WO2007043755A1 (en) * | 2005-10-13 | 2007-04-19 | Sunsook Hwang | Rapid freezing/vacuum drying method and apparatus of a semiconductor wafer |
| TW201005868A (en) * | 2008-07-23 | 2010-02-01 | Tokyo Electron Ltd | High temperature electrostatic chuck and method of using |
| TW201135866A (en) * | 2010-02-25 | 2011-10-16 | Nikon Corp | Substrate separation device, load lock device, substrate adhesion device and substrate separation method |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1424263A (en) * | 1973-02-20 | 1976-02-11 | Procter & Gamble | Process for producing a stable concentrated flavourful aromatic product |
| US4186032A (en) * | 1976-09-23 | 1980-01-29 | Rca Corp. | Method for cleaning and drying semiconductors |
| JPS62169420A (ja) * | 1986-01-22 | 1987-07-25 | Hitachi Tokyo Electron Co Ltd | 表面処理方法および装置 |
| JPS6372877A (ja) * | 1986-09-12 | 1988-04-02 | Tokuda Seisakusho Ltd | 真空処理装置 |
| JPS6393642U (enExample) * | 1986-12-05 | 1988-06-17 | ||
| US5013693A (en) * | 1989-02-16 | 1991-05-07 | Wisconsin Alumni Research Foundation | Formation of microstructures with removal of liquid by freezing and sublimation |
| US5264246A (en) * | 1989-05-02 | 1993-11-23 | Mitsubishi Denki Kabushiki Kaisha | Spin coating method |
| US5173766A (en) * | 1990-06-25 | 1992-12-22 | Lsi Logic Corporation | Semiconductor device package and method of making such a package |
| TW250618B (enExample) * | 1993-01-27 | 1995-07-01 | Mitsui Toatsu Chemicals | |
| JPH0754795B2 (ja) * | 1993-01-28 | 1995-06-07 | 日本電気株式会社 | レジスト現像方法 |
| JP2947694B2 (ja) * | 1993-07-02 | 1999-09-13 | 株式会社日立製作所 | レジストパターン形成方法 |
| JPH0756323A (ja) * | 1993-08-11 | 1995-03-03 | Nikon Corp | 基板洗浄装置 |
| US5835334A (en) * | 1996-09-30 | 1998-11-10 | Lam Research | Variable high temperature chuck for high density plasma chemical vapor deposition |
| US6328096B1 (en) * | 1997-12-31 | 2001-12-11 | Temptronic Corporation | Workpiece chuck |
| JP3695971B2 (ja) * | 1998-12-22 | 2005-09-14 | シャープ株式会社 | 成膜装置および成膜方法 |
| JP3751246B2 (ja) * | 2001-11-13 | 2006-03-01 | 大日本スクリーン製造株式会社 | 薄膜形成装置および搬送方法 |
| JP2004119715A (ja) * | 2002-09-26 | 2004-04-15 | Dainippon Screen Mfg Co Ltd | 付着物剥離方法および付着物剥離装置 |
| US8029893B2 (en) * | 2004-04-02 | 2011-10-04 | Curwood, Inc. | Myoglobin blooming agent, films, packages and methods for packaging |
| JP4719508B2 (ja) * | 2004-09-22 | 2011-07-06 | 富士フイルム株式会社 | セルロースアシレートフィルムおよびその製造方法並びに、該セルロースアシレートフィルムを用いた光学フィルム及び画像表示装置 |
| FR2880105B1 (fr) * | 2004-12-23 | 2007-04-20 | Cie Financiere Alcatel Sa | Dispositif et procede de pilotage de l'operation de deshydratation durant un traitement de lyophilisation |
| JP2007298858A (ja) * | 2006-05-02 | 2007-11-15 | Hoya Corp | マスクブランク用基板の製造方法、マスクブランクの製造方法、及び露光用マスクの製造方法、並びに、マスクブランク、及び露光用マスク |
| WO2008063135A1 (en) * | 2006-11-24 | 2008-05-29 | Agency For Science, Technology And Research | Apparatus for processing a sample in a liquid droplet and method of using the same |
| MX2009011551A (es) * | 2007-04-26 | 2009-12-03 | Coca Cola Co | Proceso y aparato para secar y curar un recubrimiento de recipiente y recipientes producidos a traves de ellos. |
| KR101191691B1 (ko) * | 2008-11-14 | 2012-10-16 | 가부시키가이샤 알박 | 유기 박막 증착 장치, 유기 el 소자 제조 장치 및 유기 박막 증착 방법 |
| US20120247504A1 (en) * | 2010-10-01 | 2012-10-04 | Waleed Nasr | System and Method for Sub-micron Level Cleaning of Surfaces |
| CN102148133B (zh) * | 2010-12-06 | 2012-09-05 | 北京七星华创电子股份有限公司 | 单晶圆干燥装置及方法 |
| US9673037B2 (en) * | 2011-05-31 | 2017-06-06 | Law Research Corporation | Substrate freeze dry apparatus and method |
| US10112258B2 (en) * | 2012-03-30 | 2018-10-30 | View, Inc. | Coaxial distance measurement via folding of triangulation sensor optics path |
| US8898928B2 (en) * | 2012-10-11 | 2014-12-02 | Lam Research Corporation | Delamination drying apparatus and method |
-
2012
- 2012-10-11 US US13/650,044 patent/US8898928B2/en not_active Expired - Fee Related
-
2013
- 2013-10-07 SG SG2013075718A patent/SG2013075718A/en unknown
- 2013-10-10 JP JP2013212490A patent/JP6321937B2/ja not_active Expired - Fee Related
- 2013-10-11 CN CN201310473237.7A patent/CN103730332B/zh not_active Expired - Fee Related
- 2013-10-11 KR KR1020130121423A patent/KR20140047009A/ko not_active Ceased
- 2013-10-11 TW TW102136808A patent/TWI602234B/zh not_active IP Right Cessation
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200640584A (en) * | 2005-05-26 | 2006-12-01 | Semes Co Ltd | Method and apparatus for cleaning and drying substrates |
| WO2007043755A1 (en) * | 2005-10-13 | 2007-04-19 | Sunsook Hwang | Rapid freezing/vacuum drying method and apparatus of a semiconductor wafer |
| TW200632440A (en) * | 2006-06-05 | 2006-09-16 | Mikuni Denshi Kk | Vacuum combining alignment apparatus and liquid crystal display device manufactured by using the same |
| TW201005868A (en) * | 2008-07-23 | 2010-02-01 | Tokyo Electron Ltd | High temperature electrostatic chuck and method of using |
| TW201135866A (en) * | 2010-02-25 | 2011-10-16 | Nikon Corp | Substrate separation device, load lock device, substrate adhesion device and substrate separation method |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20140047009A (ko) | 2014-04-21 |
| US8898928B2 (en) | 2014-12-02 |
| SG2013075718A (en) | 2014-05-29 |
| CN103730332B (zh) | 2017-05-10 |
| CN103730332A (zh) | 2014-04-16 |
| JP2014090167A (ja) | 2014-05-15 |
| US20140101964A1 (en) | 2014-04-17 |
| TW201430938A (zh) | 2014-08-01 |
| JP6321937B2 (ja) | 2018-05-09 |
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