JP6285671B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6285671B2
JP6285671B2 JP2013187259A JP2013187259A JP6285671B2 JP 6285671 B2 JP6285671 B2 JP 6285671B2 JP 2013187259 A JP2013187259 A JP 2013187259A JP 2013187259 A JP2013187259 A JP 2013187259A JP 6285671 B2 JP6285671 B2 JP 6285671B2
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Japan
Prior art keywords
circuit
signal output
wiring
signal
output circuit
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Expired - Fee Related
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JP2013187259A
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English (en)
Japanese (ja)
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JP2014074713A (ja
JP2014074713A5 (enExample
Inventor
黒川　義元
義元 黒川
鶴目　卓也
卓也 鶴目
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2013187259A priority Critical patent/JP6285671B2/ja
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Publication of JP2014074713A5 publication Critical patent/JP2014074713A5/ja
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Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • G01T1/20184—Detector read-out circuitry, e.g. for clearing of traps, compensating for traps or compensating for direct hits
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/208—Circuits specially adapted for scintillation detectors, e.g. for the photo-multiplier section
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/618—Noise processing, e.g. detecting, correcting, reducing or removing noise for random or high-frequency noise
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/198—Contact-type image sensors [CIS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Geophysics And Detection Of Objects (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2013187259A 2012-09-12 2013-09-10 半導体装置 Expired - Fee Related JP6285671B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013187259A JP6285671B2 (ja) 2012-09-12 2013-09-10 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012200495 2012-09-12
JP2012200495 2012-09-12
JP2013187259A JP6285671B2 (ja) 2012-09-12 2013-09-10 半導体装置

Publications (3)

Publication Number Publication Date
JP2014074713A JP2014074713A (ja) 2014-04-24
JP2014074713A5 JP2014074713A5 (enExample) 2016-10-27
JP6285671B2 true JP6285671B2 (ja) 2018-02-28

Family

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Family Applications (1)

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JP2013187259A Expired - Fee Related JP6285671B2 (ja) 2012-09-12 2013-09-10 半導体装置

Country Status (5)

Country Link
US (2) US9006635B2 (enExample)
JP (1) JP6285671B2 (enExample)
KR (1) KR102133602B1 (enExample)
DE (1) DE102013217278B4 (enExample)
TW (2) TWI587700B (enExample)

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JP6555956B2 (ja) * 2014-07-31 2019-08-07 株式会社半導体エネルギー研究所 撮像装置、監視装置、及び電子機器
TWI710124B (zh) 2015-01-30 2020-11-11 日商半導體能源研究所股份有限公司 成像裝置及電子裝置
JP6176583B1 (ja) * 2015-11-12 2017-08-09 パナソニックＩｐマネジメント株式会社 光検出装置
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CN112840639B (zh) * 2018-10-11 2024-10-15 株式会社半导体能源研究所 摄像装置及电子设备
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WO2021064518A1 (ja) 2019-10-04 2021-04-08 株式会社半導体エネルギー研究所 表示モジュール、および電子機器
KR102815487B1 (ko) * 2019-10-15 2025-05-30 에스케이하이닉스 주식회사 이미지 센서 및 이를 포함하는 이미지 처리 장치
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US9887232B2 (en) 2018-02-06
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US20150179696A1 (en) 2015-06-25
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