JP6254098B2 - 基板の選択性酸化のための方法および装置 - Google Patents

基板の選択性酸化のための方法および装置 Download PDF

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JP6254098B2
JP6254098B2 JP2014556783A JP2014556783A JP6254098B2 JP 6254098 B2 JP6254098 B2 JP 6254098B2 JP 2014556783 A JP2014556783 A JP 2014556783A JP 2014556783 A JP2014556783 A JP 2014556783A JP 6254098 B2 JP6254098 B2 JP 6254098B2
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substrate
temperature
gas
chamber
chamber walls
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JP2015511403A5 (https=
JP2015511403A (ja
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アグス ティジュンダラ，
アグス ティジュンダラ，
クリストファー エス． オルセン，
クリストファー エス． オルセン，
ヨハネス スウェンベルク，
ヨハネス スウェンベルク，
ララ ハウリルチャック，
ララ ハウリルチャック，
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6314—Formation by oxidation, e.g. oxidation of the substrate of a metallic layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

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  • Formation Of Insulating Films (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
JP2014556783A 2012-02-13 2013-02-11 基板の選択性酸化のための方法および装置 Active JP6254098B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261597900P 2012-02-13 2012-02-13
US61/597,900 2012-02-13
US13/764,137 US8993458B2 (en) 2012-02-13 2013-02-11 Methods and apparatus for selective oxidation of a substrate
PCT/US2013/025577 WO2013122874A1 (en) 2012-02-13 2013-02-11 Methods and apparatus for selective oxidation of a substrate
US13/764,137 2013-02-11

Publications (3)

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JP2015511403A JP2015511403A (ja) 2015-04-16
JP2015511403A5 JP2015511403A5 (https=) 2016-06-09
JP6254098B2 true JP6254098B2 (ja) 2017-12-27

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US (2) US8993458B2 (https=)
JP (1) JP6254098B2 (https=)
KR (1) KR102028779B1 (https=)
CN (1) CN104106128B (https=)
WO (1) WO2013122874A1 (https=)

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US20130210240A1 (en) 2013-08-15
KR20140135744A (ko) 2014-11-26
WO2013122874A1 (en) 2013-08-22
KR102028779B1 (ko) 2019-10-04
US9514968B2 (en) 2016-12-06
CN104106128B (zh) 2016-11-09
US8993458B2 (en) 2015-03-31
US20150206777A1 (en) 2015-07-23
JP2015511403A (ja) 2015-04-16

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